TRANSISTOR SPEC LIST Search Results

ISO-2859-1

Abstract: PT202MR0MP1 EIAJ C-3
Contextual Info: SPEC. No. SH AR P ISSUE DG036004A Oct/28/03 CONPOUND SEMICONDUCTOR DIVISION ELECTRONIC COMPONENTS GROUP SHARP CORPORATION TECHNICAL LITERATURE DEVICE TECHNICAL LITERATURE FOR Photo Transistor MODEL No. PT202MR0MP1 * The technical literature is subject to be changed without notice *

TL817

Abstract: TL801 TL804 TL802 c901 transistor transistor c904 TL944 TL902 transistor c905 tl945
Contextual Info: PTFB241402F Customer-Specific Spec — Not for General Release High Power RF LDMOS Field Effect Transistor 140 W, 2300 – 2400 MHz Description The PTFB241402F integrates two LDMOS FETs into one open-cavity ceramic package. It is designed for cellular amplifier applications in

CSG3001-18A04

Abstract: thyristor BBC thyristor aeg BBC DSDI 35 WG15013B8C WG9017 abb sami star SM18CXC805 sm13cxc174 CSG2001-18A04
Contextual Info: REPLACEMENT TABLE FOR THE POWER SEMICONDUCTORS OF SAMI STAR FREQUENCY CONVERTERS The replacement table gives a list of those semiconductors, which can be used in SAMI STAR frequency converters. The types given for each semiconductor are interchangeable. Detail information about the mounting of the power

capacitor 4700uF

Abstract: EI-57 transformer capacitor 4700uf 16v Transformer EI-57 CA723 DTR050100-P1 EI-57 TIP41A thermal fuse 115 0202I
Contextual Info: CUI IN C SPEC NO: 035-0058 PART NO: DTR050100-P1 UNIT: mm PAGE NO: 1 o f 3 DATE: 10/02/02 All information contained herein applies only to the above listed part number. Other versions of this part number with electrical or mechanical variations are available. Contact CUI Inc. for further assistance. 9615 SW Alien Blvd., Ste. 103, Beaverton OR 97005

transistor cross reference

Abstract: MPT3N40 Westinghouse SCR handbook LT 8224 ZENER DIODE sje389 N9602N npn transistor RCA 467 TFK 7 segment displays PUT 2N6027 delco 466
Contextual Info: C K TBD DOLLY LIST LOGO LIST SAFETY & RELIABLTY TEK PN SYSTEM II DIGITAL IC's MEMORIES. MOS. CM OS.ECL. TTL MICROPROCESSOR SPECIAL FUNCTION IC's DIGITAL / LINEAR ARRAYS LINEAR IC'S (PURCH) TEK-MADE IC’s 3 IC's INDEX (COLORED PGS) INCL PRGMD. SCRND.ETC

74HC123 watchdog

Abstract: application circuits of ic 74HC123 74HC123 PC319 PC358 PC393 PC4558 PC842 transistor marking CS Gyro Motor
Contextual Info: Introduction Analog Master , semi-custom IC which realizes one chip solution of analog circuits. Analog Master is a semi-custom LSI for creating analog circuits on a master wafer by interconnecting pre-diffused elements bipolar transistors, resistors, and capacitors already

DB3-K079

Contextual Info: SPEC IFICA TIO N Voltage regulator with on/off TK 715xxSCL Output Voltage Voltage Code Output Voltage xx Part : Correspondence list Output Voltage Voltage Code Voltage Code Output Voltage Voltage Code 1.9 V 19 2.0 V 20 3.0 V 30 4.0 V 40 2.1 V 21 3.1 V 31 4.1 V

E41R

Abstract: M68000 M68300 MC68341 QEAQ9412 XC68341FT16 circuit of pit and interrupt AS68K rmc capacitor
Contextual Info: Chip Errata 68341 Integrated Processor 3/28/96 Copyright C 1996, Motorola Contents of this document are intended only for the internal use of Motorola customers designing with this product. This errata list applies to the following 68341 mask sets: Mask

PN5179

Abstract: CBVK741B019 F63TNR MMBT5179 MPS5179 PN2222N TRANSISTOR C 3223 MJC2
Contextual Info: PN5179 MMBT5179 C E C B TO-92 SOT-23 E C B E Mark: 3C TO-92 B NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers with collector currents in the 100 µA to 30 mA range in common emitter or common base mode of operation, and in low frequency

pMOS transistor

Abstract: X311 XAPP311 PMOS driver coolrunner PCI Signal Path designer
Contextual Info: Please use this Application Note in reference to the CoolRunner XPLA3 family only. Refer to www.xilinx.com/partinfo/notify/pdn0007.htm for details. Application Note: CoolRunner® CPLDs R 5 Volt Tolerant and PCI XAPP311 v1.2 October 9, 2000 Summary The purpose of this application note is to investigate the PCI (Peripheral Component Interface)

X311

Abstract: pMOS transistor XAPP311 Signal Path designer
Contextual Info: Application Note: CoolRunner CPLDs R 5 Volt Tolerant and PCI XAPP311 v1.1 February 14, 2000 Summary The purpose of this application note is to investigate the PCI (Peripheral Component Interface) environment when using 5V tolerant, 3.3V supply integrated circuits. In particular, we will

Contextual Info: VPDQ1 DIE P-Channel Enhancement-Mode MOS Transistor in c o r p o r a te d VPDQ1CHP* BSS92 TP2020L TP1220L VP2020L 0.038 ‘ Meets or exceeds specification for all part numbers listed below For additional design information please consult the 0. 965 ( 0 .254)

Contextual Info: 3 HFA3127/883 February 1995 Ultra High Frequency Transistor Array Features Description • This Circuit is Processed In Accordance to MIL-STD883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1. The HFA3127/883 is an Ultra High Frequency Transistor

HARRIS SEMICONDUCTOR APPLICATION NOTES

Abstract: SMD TRANSISTORS AAA GDIP1-T16 HFA3127 harris 8 lead cerdip DIMENSIONS
Contextual Info: HFA3127/883 S E M I C O N D U C T O R Ultra High Frequency Transistor Array February 1995 Features Description • This Circuit is Processed in Accordance to MIL-STD883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1. The HFA3127/883 is an Ultra High Frequency Transistor

2N7051

Abstract: 2N7053 CBVK741B019 F63TNR NZT7053 PN2222N S4-70 2N705
Contextual Info: 2N7053 NZT7053 C E C B TO-92 E C C B TO-226 B SOT-223 E NPN Darlington Transistor This device is designed for applications requiring extremely high gain at collector currents to 1.0 A and high breakdown voltage. Sourced from Process 06. Absolute Maximum Ratings*

2N7051

Abstract: 2N7053 CBVK741B019 F63TNR NZT7053 PN2222N
Contextual Info: 2N7053 NZT7053 C E C B TO-92 E C C B TO-226 B SOT-223 E NPN Darlington Transistor This device is designed for applications requiring extremely high gain at collector currents to 1.0 A and high breakdown voltage. Sourced from Process 06. Absolute Maximum Ratings*

Contextual Info: FS8855-DS-26_EN JAN 2011 FO Fo P R r R ro TU ef pe NE er rti ' en es ce O nl y REV. 2.6 Datasheet FS8855 500 mA LDO Linear Regulator FS8855 FO Fo P R r R ro TU ef pe NE er rti ' en es ce O nl y Fortune Semiconductor Corporation 富晶電子股份有限公司

atmel 344

Abstract: ATL60
Contextual Info: ATL60 Cell-3.4-4/98 ATL60/ATLS60 0.6µ Cell Library How to Use This Cell Library . 7-2 Gate Count Estimation. 7-2

SAMSUNG VFD

Abstract: Samsung Tantalum Capacitor IN5819 diode IRF9540 application Buck Circuit S3F84A5 VLF12060 S3F84P4 IN5819 VISHAY BD1 VFD module
Contextual Info: APPLICATION NOTE S3F84A5 An LED Lighting System January 2010 Revision 0.00 Confidential Proprietary of Samsung Electronics Co., Ltd Copyright 2010 Samsung Electronics, Inc. All Rights Reserved Important Notice The information in this publication has been carefully

harris 8 lead cerdip DIMENSIONS

Contextual Info: HFA3127/883 HARRIS S E M I C O N D U C T O R Ultra High Frequency Transistor Array February 1995 Features Description • This Circuit is Processed in Accordance to MIL-STD883 and is Fully Conform ant Under the Provisions of Paragraph 1.2.1. The HFA3127/883 is an Ultra High Frequency Transistor

2N5306

Abstract: F63TNR MPSA14 PN2222N CBVK741B019
Contextual Info: 2N5306 C TO-92 BE NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 1.0 A. Sourced from Process 05. See MPSA14 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

k 3683 transistor

Abstract: BCxxx TRANSISTOR PN2222N 2N6076 CBVK741B019 F63TNR small signal transistor transistor k 3683 transistor k 0247
Contextual Info: DISCRETE POWER & SIGNAL TECHNOLOGIES 2N6076 SILICON PNP SMALL SIGNAL TRANSISTOR 1 BVCEO . . . . 25 V Min 1 2 3 hFE . . . . 100 (Min) @ VCE = 10 V, IC = 10 mA B C E 2 0.135 - 0.145 (3.429 - 3.683) 3 0.175 - 0.185 (4.450 - 4.700) ABSOLUTE MAXIMUM RATINGS (NOTE 1)

2N5308

Abstract: PN2222N TO5 package D9842 F63TNR MPSA14 CBVK741B019 PN222N D74z transistor k 0247
Contextual Info: 2N5308 C TO-92 BE NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 1.0 A. Sourced from Process 05. See MPSA14 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

2N3663

Abstract: CBVK741B019 F63TNR PN2222N PN918
Contextual Info: 2N3663 2N3663 B TO-92 CE NPN RF Transistor This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 43. See PN918 for characteristics. Absolute Maximum Ratings*