BU108
Abstract: TRANSISTOR REPLACEMENT GUIDE BD676 BD676A application note BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD676 BD676A BD678 BD678A BD680 BD680A BD682 Plastic Medium-Power Silicon PNP Darlingtons . . . for use as output devices in complementary general–purpose amplifier applications. • High DC Current Gain — hFE = 750 Min @ IC = 1.5 and 2.0 Adc
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bd676bd675bd676abd678+10bd678abd680bd680abd682tip73bbu108transistor replacement guide bd676bd676a application notebu326bu100
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2SC495
Abstract: NSP41A BU108 transistor BD614 MOTOROLA 2SA663 BD4122 BD661 MJ1000 NSP2100 D45VH4 similar
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJF6107 Power Transistor For Isolated Package Applications PNP SILICON POWER TRANSISTOR 7 AMPERES 70 VOLTS 34 WATTS Designed for general–purpose amplifier and switching applications, where the mounting surface of the device is required to be electrically isolated from the heatsink
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mjf61072n6107e69369tip73b+16tip74tip74atip74btip75tip75atip75b2sc495nsp41abu108transistor bd614 motorola2sa663bd4122bd661mj1000nsp2100d45vh4 similar
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TRANSISTOR BC 384
Abstract: BU108 bd139 equivalent transistor 2N3055 equivalent RCA1C03 transistor Bc 574 BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJF47 High Voltage Power Transistor Isolated Package Applications NPN SILICON POWER TRANSISTOR 1 AMPERE 250 VOLTS 28 WATTS Designed for line operated audio output amplifiers, switching power supply drivers and other switching applications, where the mounting surface of the device is required
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tip47e69369mjf47tip73b+14tip74tip74atip74btip75tip75atip75btransistor bc 384bu108bd139 equivalent transistor2n3055 equivalentrca1c03transistor bc 574bu326bu100
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c 3421 transistor
Abstract: BU108 transistor equivalent of BU406 equivalent transistor 2n3055 bu126 motorola 2SD165 bc 574 transistor D 1163 A BU208A 2N4906 MOTOROLA
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Horizontal Deflection Transistor . . . designed for use in televisions. • • • • Collector–Emitter Voltages VCES 1500 Volts Fast Switching — 400 ns Typical Fall Time Low Thermal Resistance 1_C/W Increased Reliability
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bu208atip73btip74tip74a+15tip74btip75tip75atip75btip75c2n6488c 3421 transistorbu108transistor equivalent of bu406equivalent transistor 2n3055bu126 motorola2sd165bc 574 transistord 1163 a2n4906 motorola
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2sc1943 circuit diagram
Abstract: TIP42C DIAGRAM pin diagram mje13003 TRANSISTOR tip41c schematic diagram BD139 transistor circuit diagram TIP31 NPN Transistor diagram 2N3055 4D 2N3055 TO-218 Package BU108 tip122 tip127 audio amp schematic
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information NPN Silicon Power Darlington High Voltage Autoprotected The BU323Z is a planar, monolithic, high–voltage power Darlington with a built–in active zener clamping circuit. This device is specifically designed for unclamped,
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bu323ztip73btip74tip74a+16tip74btip75tip75atip75btip75c2n64882sc1943 circuit diagramtip42c diagrampin diagram mje13003transistor tip41c schematic diagrambd139 transistor circuit diagramtip31 npn transistor diagram2n3055 4d2n3055 to-218 packagebu108tip122 tip127 audio amp schematic
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automotive ignition tip162
Abstract: bc337 cross-reference BU108 BD390 cross reference replacement transistor BC337 BUX48A 2SD1815 "cross reference" TIP102 Darlington transistor Motorola MJ15022 MJ1000
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BU323AP NPN Silicon Darlington Power Transistor The BU323AP is a monolithic darlington transistor designed for automotive ignition, switching regulator and motor control applications. • Collector–Emitter Sustaining Voltage —
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bu323aptip73btip74tip74a+15tip74btip75tip75atip75btip75cautomotive ignition tip162bc337 cross-referencebu108bd390 cross referencereplacement transistor bc337bux48a2sd1815 "cross referencetip102 darlington transistormotorola mj15022mj1000
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automotive ignition tip162
Abstract: BU323A equivalent 2SA1046 BC337 rbe BU108 TIP102 Darlington transistor bc337 cross-reference 2SC190 replacement transistor BC337 BU326
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BU323A NPN Silicon Power Darlington Transistor The BU323A is a monolithic darlington transistor designed for automotive ignition, switching regulator and motor control applications. COLLECTOR • VCE Sat Specified at – 40_C = 2.0 V Max. at IC = 6 A.
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bu323a204aatip73btip74+15tip74atip74btip75tip75atip75bautomotive ignition tip162bu323a equivalent2sa1046bc337 rbebu108tip102 darlington transistorbc337 cross-reference2sc190replacement transistor bc337bu326
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sec tip41c
Abstract: MJE493 2SC1419 2sc3281 2n3055 audio output circuit BDW93 MJ1000 BDW83 buv98a cross reference 2SC1943
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN MJL3281A* PNP MJL1302A* Data Sheet Designer's Complementary NPN-PNP Silicon Power Bipolar Transistor *Motorola Preferred Device 15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 200 VOLTS 200 WATTS • The MJL3281A and MJL1302A are PowerBase power transistors for high power
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mjl3281amjl1302atip73btip74+14tip74atip74btip75tip75asec tip41cmje4932sc14192sc32812n3055 audio output circuitbdw93mj1000bdw83buv98a cross reference2sc1943
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BU108
Abstract: transistor Bc 574 2n6107 MOTOROLA 2SC1943 MJ3055 to220 2SC1419 BU326 BU100 MJ*15033 2N6277
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUV21 SWITCHMODE Series NPN Silicon Power Transistor 40 AMPERES NPN SILICON POWER METAL TRANSISTOR 200 VOLTS 250 WATTS . . . designed for high speed, high current, high power applications. • High DC current gain: hFE min. = 20 at IC = 12 A
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buv21tip73btip74tip74a+16tip74btip75tip75atip75btip75c2n6488bu108transistor bc 5742n6107 motorola2sc1943mj3055 to2202sc1419bu326bu100mj*150332n6277
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tip122 tip127 audio amp
Abstract: BU108 K 3569 D44H1 tip120 MJ1302A equivalent 2SB595 BDX54 BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN MJ3281A* PNP MJ1302A* Data Sheet Designer's Complementary NPN-PNP Silicon Power Bipolar Transistor *Motorola Preferred Device 15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 200 VOLTS 250 WATTS The MJ3281A and MJ1302A are PowerBase power transistors for high power
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mj3281amj1302a204aatip73b+14tip74tip74atip74btip75tip122 tip127 audio ampbu108k 3569d44h1tip120mj1302a equivalent2sb595bdx54bu326bu100
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mje15033 replacement
Abstract: BU108 2SC25 Replacements for BDW84 724 motorola NPN Transistor with heat pad BDX54 BD-375 BU326 BU100 2SC144
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN MJD6036 PNP MJD6039 Complementary Darlington Power Transistors DPAK For Surface Mount Applications Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, convertors, and power amplifiers.
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2n60342n6039mjd6036mjd6039+16pow32tip73btip74tip74atip74btip75mje15033 replacementbu1082sc25replacements for bdw84724 motorola npn transistor with heat padbdx54bd-375bu326bu1002sc144
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bdx54c equivalent
Abstract: BOX 53C darlington power transistor tip122 D-PAK package All similar transistor 2sa715 BDX53C MOTOROLA BU108 transistor tip31 AMPLIFIER 2SD718 2sb688 schematic BDX54 2N386
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Plastic Medium-Power Complementary Silicon Transistors NPN BDX53B BDX53C PNP . . . designed for general–purpose amplifier and low–speed switching applications. BDX54B • High DC Current Gain — hFE = 2500 Typ @ IC = 4.0 Adc
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bdx53bbdx53c220abbdx54b+14bdx54ctip73btip74tip74abdx54c equivalentbox 53c darlington power transistortip122 d-pak packageall similar transistor 2sa715bdx53c motorolabu108transistor tip31amplifier 2sd718 2sb688 schematicbdx542n386
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MJH11021 equivalent
Abstract: BUV44 FT317 SDT9202 2SC1903 BD262 DARLINGTON BD133 mje15033 replacement IR641 2SC2159
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJH10012 See MJ10012 Complementary Darlington Silicon Power Transistors PNP MJH11017* . . . designed for use as general purpose amplifiers, low frequency switching and motor control applications. MJH11019* • High DC Current Gain @ 10 Adc — hFE = 400 Min (All Types)
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mjh10012mj10012mjh11018mjh11020+14mjh11022mjh11017mjh11019mjh11021mjh11021 equivalentbuv44ft317sdt92022sc1903bd262 darlingtonbd133mje15033 replacementir6412sc2159
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TIP42C as regulator
Abstract: BU108 2SC103 NPN POWER DARLINGTON TRANSISTORS high voltage high ICM TO-247 NSP2100 2SD68 BDX54 2SC1943 MJE2482 2SD675
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE1123 Bipolar Power PNP Low Dropout Regulator Transistor PNP LOW DROPOUT TRANSISTOR 4.0 AMPERES 40 VOLTS The MJE1123 is an applications specific device designed to provide low–dropout linear regulation for switching–regulator post regulators, battery powered systems
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mje1123tip73btip74tip74a+15tip74btip75tip75atip75btip75ctip42c as regulatorbu1082sc103npn power darlington transistors high voltage high icm to-247nsp21002sd68bdx542sc1943mje24822sd675
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TIP34C equivalent
Abstract: BU108 TRANSISTOR BC 384 5D2 6 BUV11 equivalent BDX54 2N3025 equivalent BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUV11 SWITCHMODE Series NPN Silicon Power Transistor 20 AMPERES NPN SILICON POWER METAL TRANSISTOR 200 VOLTS 150 WATTS . . . designed for high current, high speed, high power applications. • High DC current gain; hFE min. = 20 at IC = 6 A
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buv11tip73btip74tip74a+15tip74btip75tip75atip75btip75c2n6488tip34c equivalentbu108transistor bc 3845d2 6buv11 equivalentbdx542n3025 equivalentbu326bu100
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ST T4 3580
Abstract: BU108 bdw93c applications transistor bd136 in dpak packaging 2SC103 ir411 TRANSISTOR BC 384 BDX54 2SB56 IC 714
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJD243* Plastic Power Transistor DPAK For Surface Mount Applications *Motorola Preferred Device . . . designed for low voltage, low–power, high–gain audio amplifier applications. • Collector–Emitter Sustaining Voltage — VCEO sus = 100 Vdc (Min) @ IC = 10 mAdc
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mjd243tip73btip74tip74a+16tip74btip75tip75atip75btip75c2n6488st t4 3580bu108bdw93c applicationstransistor bd136 in dpak packaging2sc103ir411transistor bc 384bdx542sb56ic 714
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2N5657 equivalent
Abstract: 2SA1046 BU326 BU108 BU100 2SC2331 Y tip47 419 2N3792 application notes
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5655 2N5656 2N5657 Plastic NPN Silicon High-Voltage Power Transistor . . . designed for use in line–operated equipment such as audio output amplifiers; low–current, high–voltage converters; and AC line relays.
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2n56552n56562n5657tip73b+14tip74tip74atip74btip75tip75atip75b2n5657 equivalent2sa1046bu326bu108bu1002sc2331 ytip47 4192n3792 application notes
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2SD669 equivalent
Abstract: BD801 BDY29 equivalent BU108 2SC2080 2SD436 2N6021 BD345 tip122 D-PAK package 2SD544
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6609 See 2N3773 Darlington Silicon Power Transistors 2N6667 2N6668 . . . designed for general–purpose amplifier and low speed switching applications. • High DC Current Gain — hFE = 3500 (Typ) @ IC = 4 Adc • Collector–Emitter Sustaining Voltage — @ 200 mAdc
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2n66092n37732n66672n6668+13220ab2n63872n63882sd669 equivalentbd801bdy29 equivalentbu1082sc20802sd4362n6021bd345tip122 d-pak package2sd544
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mje521 equivalent
Abstract: BU108 2N3055 plastic 2N6488 MOTOROLA Motorola transistors MJE3055 TO 127 3904 Transistor BDX54 tip122 tip127 audio amp BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE521 Plastic Medium-Power NPN Silicon Transistor 4 AMPERE POWER TRANSISTOR NPN SILICON 40 VOLTS 40 WATTS . . . designed for use in general–purpose amplifier and switching circuits. Recommended for use in 5 to 10 Watt audio amplifiers utilizing complementary symmetry
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mje521mje371tip73btip74+16tip74atip74btip75tip75atip75btip75cmje521 equivalentbu1082n3055 plastic2n6488 motorolamotorola transistors mje3055 to 1273904 transistorbdx54tip122 tip127 audio ampbu326bu100
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2N5631 equivalent
Abstract: 2N5630 "cross-reference" Chomerics BU108 2SA1046 tip122 tip127 audio amp BU326 BU100 2sd313 equivalent NPN/TIP42C as regulator
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN 2N5630 High-Voltage Ċ High Power Transistors 2N5631 PNP 2N6030 . . . designed for use in high power audio amplifier applications and high voltage switching regulator circuits. • High Collector Emitter Sustaining Voltage —
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2n56302n60302n56312n6031+102n5631 equivalent2n5630 "cross-referencechomericsbu1082sa1046tip122 tip127 audio ampbu326bu1002sd313 equivalentnpn/tip42c as regulator
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MJ11017 equivalent
Abstract: BU108 MJ11021 BU326 BU100 MJE3055T
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP MJ11017 MJ11021* NPN MJ11018* Complementary Darlington Silicon Power Transistors . . . designed for use as general purpose amplifiers, low frequency switching and motor control applications. MJ11022 • High dc Current Gain @ 10 Adc — hFE = 400 Min All Types
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mj11018mj11022mj11017mj11021+9tip73btip74tip74atip74bmj11017 equivalentbu108bu326bu100mje3055t
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BU108
Abstract: BC337 circuit example BC337 rbe BDX54 replacement transistor BC337 BU326 BU100 MOTOROLA 2N3773
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BU522B High Voltage Silicon Power Darlingtons 7 AMPERES DARLINGTON POWER TRANSISTORS NPN SILICON 450 VOLTS 75 WATTS Power Transistor mainly intended for use as ignition circuit output transistor. • Specified minimum sustaining voltage:
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bu522btip73btip74tip74a+14tip74btip75tip75atip75btip75c2n6488bu108bc337 circuit examplebc337 rbebdx54replacement transistor bc337bu326bu100motorola 2n3773
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Motorola transistor 388 TO-204AA
Abstract: 714 ic BC 458 2SC124 BU108 BU326 2SA1046 2SC7 BDX54 2SD214
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6030 thru 2N6031 See 2N5630 Plastic Darlington Complementary Silicon Power Transistors PNP 2N6035 . . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain —
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2n60302n60312n56302n6035+142n60382n60362n6039225aamotorola transistor 388 to-204aa714 icbc 4582sc124bu108bu3262sa10462sc7bdx542sd214
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mje15033 replacement
Abstract: 2SD694 2SC1832 MJE340 D40K MJ12002 BDW59 2SC187 MJ3237 BD3851
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN BD241B BD241C* PNP BD242B BD242C* Complementary Silicon Plastic Power Transistors . . . designed for use in general purpose amplifier and switching applications. • Collector–Emitter Saturation Voltage — VCE = 1.2 Vdc Max @ IC = 3.0 Adc
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bd241bbd242bbd241cbd242c+12tip73btip74mje15033 replacement2sd6942sc1832mje340d40kmj12002bdw592sc187mj3237bd3851
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