TRANSISTOR P50 Search Results

ntcthermistor

Abstract: V23990-P503-F tyco igbt module 35A tyco igbt module ntc-thermistor Fast Recovery Bridge Rectifier, 35A, 600V ntcthermistor 1 ntc-widerstand transistor 390 P502
Contextual Info: Targetdatasheet P500 fast PACK 0 H Version 05/02 Maximum Ratings / Höchstzulässige Werte at Tj=25°C, unless otherwise specified Parameter Transistor Inverter Transistor Wechselrichter Collector-emitter break down voltage Kollektor-Emitter-Sperrspannung

tyco igbt

Abstract: THERMISTOR NTC 1100 ohm
Contextual Info: V23990-P500-F preliminary data version 0303 fast PACK 0 H, 600V Maximum Ratings / Höchstzulässige Werte Parameter Transistor Inverter Transistor Wechselrichter Collector-emitter break down voltage Kollektor-Emitter-Sperrspannung DC collector current Kollektor-Dauergleichstrom

tyco igbt

Abstract: V23990-P502-F NTC 150 ohm tyco igbt 214
Contextual Info: V23990-P502-F preliminary data version 0303 fast PACK 0 H, 600V Maximum Ratings / Höchstzulässige Werte Parameter Transistor Inverter Transistor Wechselrichter Collector-emitter break down voltage Kollektor-Emitter-Sperrspannung DC collector current Kollektor-Dauergleichstrom

tyco igbt

Abstract: V23990-P503-F THERMISTOR NTC 1100 ohm break resistor in igbt igbt tyco 270 IGBT tyco
Contextual Info: V23990-P503-F preliminary data version 0303 fast PACK 0 H, 600V Maximum Ratings / Höchstzulässige Werte Parameter Condition Symbol Datasheet values Unit max. Transistor Inverter Transistor Wechselrichter Collector-emitter break down voltage Kollektor-Emitter-Sperrspannung

tyco igbt

Abstract: igbt tyco V23990-P501-F
Contextual Info: V23990-P501-F preliminary data version 0303 fast PACK 0 H, 600V Maximum Ratings / Höchstzulässige Werte Parameter Condition Symbol Datasheet values Unit max. Transistor Inverter Transistor Wechselrichter Collector-emitter break down voltage Kollektor-Emitter-Sperrspannung

2N2222A 338

Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
Contextual Info: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK

XC6SLX16-CSG324

Abstract: ch7301 DVI VHDL DVI VHDL xilinx ch7301 CHRONTEL 7301 Xilinx XPS Thin Film Transistor(TFT) Controller TFT controller XC4VLX25-FF668-10 a/ch7301 DVI VHDL DS695
Contextual Info: XPS Thin Film Transistor TFT Controller (v2.00a) DS695 September 16, 2009 Product Specification 0 0 Introduction LogiCORE Facts The XPS Thin Film Transistor (TFT) controller is a hardware display controller IP core capable of displaying 256k colors. The XPS TFT controller

sf 128 transistor

Abstract: TRANSISTOR SF 128 Triode 8050 marking P53 transistor SC73P2602 ic marking k52 SC73P16 bd 8050 TRANSISTOR part MARKING k48 marking k47
Contextual Info: PROGRAMMABLE INFRARED REMOTE TRANSMITTER WITH BUILT-IN TRANSISTOR DESCRIPTION SC73P2602 is SC73 core based programmable remote transmitter 4-bit MCU with infrared transmitting transistor and built-in 2K OTP program memory supporting in-system program (ISP) which can optimize the stock control.

p504a

Abstract: 11-10C1C TLP504A
Contextual Info: TLP504A,-2 GaAs IRED a PHOTO-TRANSISTOR T L P S 0 4 A U nit in mm PROGRAMMABLE CONTROLLERS TLP504A AC/DC-INPUT MODULE W eight : 0.54g SOLID STATE RELAY The TOSHIBA TLP504A and TLP504A-2 consists of a photo-transistor optically coupled to a gallium arsenide infrared em itting diode.

p504a

Abstract: LB-10 GA NANA TLP504A TA525 E67349 TLP504
Contextual Info: TRANSISTOR COUPLER GZ3 TLP504A INFRARED LE D +P H O TO TRANSISTOR TLP504A HAS TUO CHANNELS FOP. HIGH DENSITY APPLICATIONS. 8 7 a s m m m r ti THIS Ufi IT IS A 8-LEAO OtP PACKAGE. =a . OATA LINE ISOLATION . TELEPHONE SIGNAL COUPLING IP 111 Ili lili . LIME/CABLE RECEIVER

Contextual Info: PRELIMINARY CGHV22200 200 W, 1800-2200 MHz, GaN HEMT for LTE Cree’s CGHV22200 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV22200F ideal for 1.8 2.2 GHz LTE, 4G Telecom and BWA amplifier applications. The transistor is

CGHV22200

Contextual Info: PRELIMINARY CGHV22200 200 W, 1800-2200 MHz, GaN HEMT for LTE Cree’s CGHV22200 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV22200F ideal for 1.8 2.2 GHz LTE, 4G Telecom and BWA amplifier applications. The transistor is

P50N02LS

Contextual Info: P50N02LS N-Channel Logic Level Enhancement Mode Field Effect Transistor NIKO-SEM TO-263 D2PAK D PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 25 12mΩ 55A 1. GATE 2. DRAIN 3. SOURCE G S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS

P50N03LS

Contextual Info: P50N03LS N-Channel Logic Level Enhancement Mode Field Effect Transistor NIKO-SEM TO-263 D2PAK D PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 27 12mΩ 50A 1. GATE 2. DRAIN 3. SOURCE G S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS

P50N02LD

Contextual Info: P50N02LD N-Channel Logic Level Enhancement Mode Field Effect Transistor NIKO-SEM TO-252 D PAK D PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 25 12mΩ 55A 1. GATE 2. DRAIN 3. SOURCE G S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS

P50N03LD

Abstract: Niko Semiconductor
Contextual Info: P50N03LD N-Channel Logic Level Enhancement Mode Field Effect Transistor NIKO-SEM TO-252 DPAK D PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 27 12mΩ 50A 1. GATE 2. DRAIN 3. SOURCE G S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS

p50n03ld

Abstract: P50N03LDG TO252 20A18 dpak code SM-150 diode NIKO-SEM Field Effect Transistor N-Channel Enhancement-Mode Power Field-Effect transistor Niko
Contextual Info: N-Channel Logic Level Enhancement Mode Field Effect Transistor NIKO-SEM P50N03LDG TO-252 DPAK Lead-Free D PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 27 12mΩ 50A 1. GATE 2. DRAIN 3. SOURCE G S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS

P50N06

Abstract: SMP60N06-18 TRANSISTOR p50n06 SMP60N06 C0530 SMP60 siliconix SMP60N06-18
Contextual Info: Tem ic SMP60N06-18 Siliconix N-Channel Enhancement-Mode Transistor, 18-mQ ros on 175 °C Maximum Junction Temperature3 Product Summary V DS (V ) •'DS(on) ( Q ) ID (A ) 60 0.018 60 See lower-cost version: SU P50N06-18 TO-22QAB o ■Jt D R A IN co n n ected to TAB

ksd 302 250v, 10a

Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
Contextual Info: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle

MX0912B350Y

Contextual Info: 7=:3 3 —/s ’ Data sheet status Preliminary specification date of Issue June 1992 MX0912B350Y NPN Silicon planar epitaxial microwave power transistor SbE D PHILIPS INTERNATIONAL • 711DûEb ÜDHb3SM DESCRIPTION APPLICATION FEATURES • Interdigitated structure; high

Contextual Info: CGHV22200 200 W, 1800-2200 MHz, GaN HEMT for LTE Cree’s CGHV22200 is a gallium nitride GaN high electron mobility transistor (HEMT) is designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV22200F ideal for 1.8 - 2.2

hexadecimal to 7-segment LED display module

Abstract: P55 MOSFET which is used in inverter wiring 7-segment LED to decoder converted display port HDMI tps603a HD74HC139 HD74LS240 4 hexadecimal to 7-segment LED display module
Contextual Info: APPLICATION NOTE H8/300H Tiny Series Connecting a Photo Transistor Introduction A phototransistor is connected to the analog input pin and the results of A/D conversion are displayed on the 7-segment LEDs. Target Device H8/36014 Contents 1. Specifications . 2

TRANSISTOR p50

Abstract: p13 transistor P41 transistor transistor p13 P40 transistor p21 transistor transistor P32 25 p23 transistor transistor p31 transistor p11
Contextual Info: eSHP170COB Application Notes eSHP170COB 1. eSHP170COB Diagram: Connect DC Power to this connector Typical Value: 22p DAC Output ROSC (Typical: 100KΩ) Crystal: 2MHz Use this resistor to adjust bias current, current limitation, or to correct voice distortion with transistor when the

Contextual Info: CGHV22200 200 W, 1800-2200 MHz, GaN HEMT for LTE Cree’s CGHV22200 is a gallium nitride GaN high electron mobility transistor (HEMT) is designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV22200F ideal for 1.8 - 2.2