TRANSISTOR P50 Search Results

TRANSISTOR P50 Result Highlights (5)

Part	Manufacturer	Description	Download
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723	Datasheet
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold	Datasheet
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold	Datasheet
TTA012	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-80 V / IC=-4 A / hFE=100~200 / VCE(sat)=-0.22 V / tf=35 ns / PW-Mini	Datasheet
TPCP8514	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PS-8	Datasheet

TRANSISTOR P50 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
ntcthermistor Abstract: V23990-P503-F tyco igbt module 35A tyco igbt module ntc-thermistor Fast Recovery Bridge Rectifier, 35A, 600V ntcthermistor 1 ntc-widerstand transistor 390 P502 Contextual Info: Targetdatasheet P500 fast PACK 0 H Version 05/02 Maximum Ratings / Höchstzulässige Werte at Tj=25°C, unless otherwise specified Parameter Transistor Inverter Transistor Wechselrichter Collector-emitter break down voltage Kollektor-Emitter-Sperrspannung	Original	-100A/ms -200A/ms D-81359 ntcthermistor V23990-P503-F tyco igbt module 35A tyco igbt module ntc-thermistor Fast Recovery Bridge Rectifier, 35A, 600V ntcthermistor 1 ntc-widerstand transistor 390 P502	PDF
tyco igbt Abstract: THERMISTOR NTC 1100 ohm Contextual Info: V23990-P500-F preliminary data version 0303 fast PACK 0 H, 600V Maximum Ratings / Höchstzulässige Werte Parameter Transistor Inverter Transistor Wechselrichter Collector-emitter break down voltage Kollektor-Emitter-Sperrspannung DC collector current Kollektor-Dauergleichstrom	Original	V23990-P500-F D81359 RT/R25 tyco igbt THERMISTOR NTC 1100 ohm	PDF
tyco igbt Abstract: V23990-P502-F NTC 150 ohm tyco igbt 214 Contextual Info: V23990-P502-F preliminary data version 0303 fast PACK 0 H, 600V Maximum Ratings / Höchstzulässige Werte Parameter Transistor Inverter Transistor Wechselrichter Collector-emitter break down voltage Kollektor-Emitter-Sperrspannung DC collector current Kollektor-Dauergleichstrom	Original	V23990-P502-F 100Rgon D81359 RT/R25 tyco igbt V23990-P502-F NTC 150 ohm tyco igbt 214	PDF
tyco igbt Abstract: V23990-P503-F THERMISTOR NTC 1100 ohm break resistor in igbt igbt tyco 270 IGBT tyco Contextual Info: V23990-P503-F preliminary data version 0303 fast PACK 0 H, 600V Maximum Ratings / Höchstzulässige Werte Parameter Condition Symbol Datasheet values Unit max. Transistor Inverter Transistor Wechselrichter Collector-emitter break down voltage Kollektor-Emitter-Sperrspannung	Original	V23990-P503-F D81359 RT/R25 tyco igbt V23990-P503-F THERMISTOR NTC 1100 ohm break resistor in igbt igbt tyco 270 IGBT tyco	PDF
tyco igbt Abstract: igbt tyco V23990-P501-F Contextual Info: V23990-P501-F preliminary data version 0303 fast PACK 0 H, 600V Maximum Ratings / Höchstzulässige Werte Parameter Condition Symbol Datasheet values Unit max. Transistor Inverter Transistor Wechselrichter Collector-emitter break down voltage Kollektor-Emitter-Sperrspannung	Original	V23990-P501-F 100Rgon D81359 RT/R25 tyco igbt igbt tyco V23990-P501-F	PDF
2N2222A 338 Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931 Contextual Info: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK	OCR Scan	2CY17 2CY18 2CY19 2CY20 2CY21 500MA 500MA 2N2222A 338 TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931	PDF
XC6SLX16-CSG324 Abstract: ch7301 DVI VHDL DVI VHDL xilinx ch7301 CHRONTEL 7301 Xilinx XPS Thin Film Transistor(TFT) Controller TFT controller XC4VLX25-FF668-10 a/ch7301 DVI VHDL DS695 Contextual Info: XPS Thin Film Transistor TFT Controller (v2.00a) DS695 September 16, 2009 Product Specification 0 0 Introduction LogiCORE Facts The XPS Thin Film Transistor (TFT) controller is a hardware display controller IP core capable of displaying 256k colors. The XPS TFT controller	Original	DS695 CH-7301 XC6SLX16-CSG324 ch7301 DVI VHDL DVI VHDL xilinx ch7301 CHRONTEL 7301 Xilinx XPS Thin Film Transistor(TFT) Controller TFT controller XC4VLX25-FF668-10 a/ch7301 DVI VHDL	PDF
sf 128 transistor Abstract: TRANSISTOR SF 128 Triode 8050 marking P53 transistor SC73P2602 ic marking k52 SC73P16 bd 8050 TRANSISTOR part MARKING k48 marking k47 Contextual Info: PROGRAMMABLE INFRARED REMOTE TRANSMITTER WITH BUILT-IN TRANSISTOR DESCRIPTION SC73P2602 is SC73 core based programmable remote transmitter 4-bit MCU with infrared transmitting transistor and built-in 2K OTP program memory supporting in-system program (ISP) which can optimize the stock control.	Original	SC73P2602 SC73P2602 SC73C16 sf 128 transistor TRANSISTOR SF 128 Triode 8050 marking P53 transistor ic marking k52 SC73P16 bd 8050 TRANSISTOR part MARKING k48 marking k47	PDF
p504a Abstract: 11-10C1C TLP504A Contextual Info: TLP504A,-2 GaAs IRED a PHOTO-TRANSISTOR T L P S 0 4 A U nit in mm PROGRAMMABLE CONTROLLERS TLP504A AC/DC-INPUT MODULE W eight : 0.54g SOLID STATE RELAY The TOSHIBA TLP504A and TLP504A-2 consists of a photo-transistor optically coupled to a gallium arsenide infrared em itting diode.	OCR Scan	TLP504A TLP504A-2 2500Vrms UL1577, E67349 p504a 11-10C1C	PDF
p504a Abstract: LB-10 GA NANA TLP504A TA525 E67349 TLP504 Contextual Info: TRANSISTOR COUPLER GZ3 TLP504A INFRARED LE D +P H O TO TRANSISTOR TLP504A HAS TUO CHANNELS FOP. HIGH DENSITY APPLICATIONS. 8 7 a s m m m r ti THIS Ufi IT IS A 8-LEAO OtP PACKAGE. =a . OATA LINE ISOLATION . TELEPHONE SIGNAL COUPLING IP 111 Ili lili . LIME/CABLE RECEIVER	OCR Scan	TLP504A TLP504A Ic/If50Z E67349 P504A TaS25Â LB-10 GA NANA TA525 E67349 TLP504	PDF
Contextual Info: PRELIMINARY CGHV22200 200 W, 1800-2200 MHz, GaN HEMT for LTE Cree’s CGHV22200 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV22200F ideal for 1.8 2.2 GHz LTE, 4G Telecom and BWA amplifier applications. The transistor is	Original	CGHV22200 CGHV22200 CGHV22200F CGHV22 GHV22200P	PDF
idq10 Contextual Info: PRELIMINARY CGHV22200 200 W, 1800-2200 MHz, GaN HEMT for LTE Cree’s CGHV22200 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV22200F ideal for 1.8 2.2 GHz LTE, 4G Telecom and BWA amplifier applications. The transistor is	Original	CGHV22200 CGHV22200 CGHV22200F CGHV22 GHV22200P CGHV22200-TBions idq10	PDF
CGHV22200 Contextual Info: PRELIMINARY CGHV22200 200 W, 1800-2200 MHz, GaN HEMT for LTE Cree’s CGHV22200 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV22200F ideal for 1.8 2.2 GHz LTE, 4G Telecom and BWA amplifier applications. The transistor is	Original	CGHV22200 CGHV22200 CGHV22200F CGHV22 GHV22200P CGHV22200-TBions	PDF
P50N02LS Contextual Info: P50N02LS N-Channel Logic Level Enhancement Mode Field Effect Transistor NIKO-SEM TO-263 D2PAK D PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 25 12mΩ 55A 1. GATE 2. DRAIN 3. SOURCE G S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS	Original	P50N02LS O-263 P50N02LS" MAY-24-2001 P50N02LS	PDF

SEM 2005 Abstract: P5002CMG Contextual Info: P5002CMG N-Channel Logic Level Enhancement Mode Field Effect Transistor NIKO-SEM SOT-23 Lead-Free D PRODUCT SUMMARY V BR DSS RDS(ON) ID 20 50.8mΩ 3A 1. GATE 2. DRAIN 3. SOURCE G S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS	Original	P5002CMG OT-23 Mar-18-2005 SEM 2005 P5002CMG	PDF
P50N02LD Contextual Info: P50N02LD N-Channel Logic Level Enhancement Mode Field Effect Transistor NIKO-SEM TO-252 D PAK D PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 25 12mΩ 55A 1. GATE 2. DRAIN 3. SOURCE G S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS	Original	P50N02LD O-252 P50N02LD" MAY-24-2001 P50N02LD	PDF
P50N03LD Abstract: Niko Semiconductor Contextual Info: P50N03LD N-Channel Logic Level Enhancement Mode Field Effect Transistor NIKO-SEM TO-252 DPAK D PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 27 12mΩ 50A 1. GATE 2. DRAIN 3. SOURCE G S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS	Original	P50N03LD O-252 Dec-10-2002 P50N03LD Niko Semiconductor	PDF
p50n03ld Abstract: P50N03LDG TO252 20A18 dpak code SM-150 diode NIKO-SEM Field Effect Transistor N-Channel Enhancement-Mode Power Field-Effect transistor Niko Contextual Info: N-Channel Logic Level Enhancement Mode Field Effect Transistor NIKO-SEM P50N03LDG TO-252 DPAK Lead-Free D PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 27 12mΩ 50A 1. GATE 2. DRAIN 3. SOURCE G S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS	Original	P50N03LDG O-252 Temperature04 SEP-22-2004 p50n03ld P50N03LDG TO252 20A18 dpak code SM-150 diode NIKO-SEM Field Effect Transistor N-Channel Enhancement-Mode Power Field-Effect transistor Niko	PDF
P50N06 Abstract: SMP60N06-18 TRANSISTOR p50n06 SMP60N06 C0530 SMP60 siliconix SMP60N06-18 Contextual Info: Tem ic SMP60N06-18 Siliconix N-Channel Enhancement-Mode Transistor, 18-mQ ros on 175 °C Maximum Junction Temperature3 Product Summary V DS (V ) •'DS(on) ( Q ) ID (A ) 60 0.018 60 See lower-cost version: SU P50N06-18 TO-22QAB o ■Jt D R A IN co n n ected to TAB	OCR Scan	SMP60N06-18 18-mQ P50N06-18 O-22QAB P-36737--Rev. P50N06 SMP60N06-18 TRANSISTOR p50n06 SMP60N06 C0530 SMP60 siliconix SMP60N06-18	PDF
ksd 302 250v, 10a Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643 Contextual Info: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle	OCR Scan	CB-F36c 2SD1642 2SD2182, 2SC4489, -08S- ksd 302 250v, 10a irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643	PDF
MX0912B350Y Contextual Info: 7=:3 3 —/s ’ Data sheet status Preliminary specification date of Issue June 1992 MX0912B350Y NPN Silicon planar epitaxial microwave power transistor SbE D PHILIPS INTERNATIONAL • 711DûEb ÜDHb3SM DESCRIPTION APPLICATION FEATURES • Interdigitated structure; high	OCR Scan	MX0912B350Y 7110A2b ampl95 T-33-15 MX0912B350Y 711D6Eb D04b3L	PDF
Contextual Info: CGHV22200 200 W, 1800-2200 MHz, GaN HEMT for LTE Cree’s CGHV22200 is a gallium nitride GaN high electron mobility transistor (HEMT) is designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV22200F ideal for 1.8 - 2.2	Original	CGHV22200 CGHV22200 CGHV22200F CGHV22 GHV22200P	PDF
hexadecimal to 7-segment LED display module Abstract: P55 MOSFET which is used in inverter wiring 7-segment LED to decoder converted display port HDMI tps603a HD74HC139 HD74LS240 4 hexadecimal to 7-segment LED display module Contextual Info: APPLICATION NOTE H8/300H Tiny Series Connecting a Photo Transistor Introduction A phototransistor is connected to the analog input pin and the results of A/D conversion are displayed on the 7-segment LEDs. Target Device H8/36014 Contents 1. Specifications . 2	Original	H8/300H H8/36014 REJ06B0119-0100Z/Rev hexadecimal to 7-segment LED display module P55 MOSFET which is used in inverter wiring 7-segment LED to decoder converted display port HDMI tps603a HD74HC139 HD74LS240 4 hexadecimal to 7-segment LED display module	PDF
TRANSISTOR p50 Abstract: p13 transistor P41 transistor transistor p13 P40 transistor p21 transistor transistor P32 25 p23 transistor transistor p31 transistor p11 Contextual Info: eSHP170COB Application Notes eSHP170COB 1. eSHP170COB Diagram: Connect DC Power to this connector Typical Value: 22p DAC Output ROSC (Typical: 100KΩ) Crystal: 2MHz Use this resistor to adjust bias current, current limitation, or to correct voice distortion with transistor when the	Original	eSHP170COB eSHP170COB eSHP170 eSHP170 AP-eSH-0005 TRANSISTOR p50 p13 transistor P41 transistor transistor p13 P40 transistor p21 transistor transistor P32 25 p23 transistor transistor p31 transistor p11	PDF

TRANSISTOR P50 Search Results

TRANSISTOR P50 Result Highlights (5)

TRANSISTOR P50 Datasheets Context Search

ntcthermistor

tyco igbt

tyco igbt

tyco igbt

tyco igbt

2N2222A 338

XC6SLX16-CSG324

sf 128 transistor

p504a

p504a

idq10

CGHV22200

P50N02LS

SEM 2005

P50N02LD

P50N03LD

p50n03ld

P50N06

ksd 302 250v, 10a

MX0912B350Y

hexadecimal to 7-segment LED display module

TRANSISTOR p50