P5002CMG Search Results
P5002CMG Datasheets (1)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| P5002CMG | Niko Semiconductor | N-Channel Logic Level Enhancement FET | Original | 129KB | 5 |
P5002CMG Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
SEM 2005
Abstract: P5002CMG
|
Original |
p5002cmgot-23mar-18-2005sem 2005 | |
ELM33408CAContextual Info: 单 N 沟道 MOSFET ELM33408CA-S •概要 ■特点 ELM33408CA-S 是 N 沟道低输入电容,低工作电压, •Vds=20V 低导通电阻的大电流 MOSFET。 ·Id=3A ·Rds on < 50.8mΩ (Vgs=4.5V) ·Rds(on) < 100mΩ (Vgs=2.5V) ■绝对最大额定值 |
Original |
elm33408ca-sot-23mar-22-2006p5002cmg+1 | |
|
Contextual Info: Single N-channel MOSFET ELM33408CA-S •General description ■Features ELM33408CA-S uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • Vds=20V Id=3A Rds(on) < 50.8mΩ (Vgs=4.5V) Rds(on) < 100mΩ (Vgs=2.5V) |
Original |
elm33408ca-sp5002cmgot-23mar-22-2006 | |
|
Contextual Info: シングル N チャンネル MOSFET ELM33408CA-S •概要 ■特長 ELM33408CA-S は低入力容量 低電圧駆動、 低 ・ Vds=20V ON 抵抗という特性を備えた大電流 MOS FET です。 ・ Id=3A ・ Rds on < 50.8mΩ (Vgs=4.5V) ・ Rds(on) < 100mΩ (Vgs=2.5V) |
Original |
elm33408ca-sp5002cmgot-23mar-22-2006 | |
P70N02LDG
Abstract: p0603bdg P60N03LDG PA102FDG P2503NPG P45N02LDG P0603BD P1703BDG P0403BDG P3004ND5G
|
Original |
o-263p45n02lsgp45n03ltgp75n02lsg+16 | |
p1503bvg
Abstract: OZ8602 OZ815LN P0603BVG oz815 CH7318 tr 2n3904 C1284 P0603B ITE8512
|
Original |
f50ixxics9lpr365ch7318rtl8102e+15 | |
ME4410A
Abstract: OZ8602 P0603BVG AR9462 oz815 ME4410B OZ815LN PCM sbec ALC662 APM3006
|
Original |
f50ixxics9lpr365ch7318rtl8102e+16 | |
KF6N60
Abstract: 2SK3850 equivalent KF9N25 KF7N50 MDF10N65b transistor PANASONIC ZENER Kf10n60 KIA278R12PI equivalent kid65003ap equivalent kia578r05
|
Original |
usfb053usfb13usfb13ausfb13l+16 | |
|
Contextual Info: Single N-channel MOSFET ELM33408CA-S •General description ■Features ELM33408CA-S uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • Vds=20V Id=3A Rds(on) < 50.8mΩ (Vgs=4.5V) Rds(on) < 100mΩ (Vgs=2.5V) |
Original |
elm33408ca-sp5002cmgot-23mar-22-2006 |