SMP60 Search Results

SMP60N06A

Abstract: SMP60N06
Contextual Info: IflE » SILICONIX INC f X Siliconix JL M • 6SSM73S 0014177 4 ■ SMP60N06A in c o rp o ra te d T '3^-13» N-Channel Enhancement Mode Transistor TQ-220AB TOP VIEW PRODUCT SUMMARY V BR|DSS " y 0.018 60 Id (A 60 1 GATE 2 DRAIN (Connected to TAB) 3 SOURCE ABSOLUTE MAXIMUM RATINGS (Tc = 25° C Unless Otherwise Noted)

SMP60N06-18

Abstract: SUP50N06 SUP50N06-18 SMP60N06
Contextual Info: SMP60N06Ć18 Siliconix NĆChannel EnhancementĆMode Transistor, 18ĆmW rDS on 175_C Maximum Junction Temperaturea Product Summary VDS (V) rDS(on) (W) ID (A) 60 0.018 60 See lowerĆcost version: SUP50N06Ć18 D TOĆ220AB G DRAIN connected to TAB GD S S Top View

SMP60N06-14

Abstract: SMP60N06 70281 SMP60N06-14 equivalent SUP60N06
Contextual Info: SMP60N06-14 N-Channel Enhancement-Mode Transistor Product Summary VDS V rDS(on) (W) ID (A) 60 0.014 60 See lowerĆcost version: SUP60N06Ć14 D TO-220AB G DRAIN connected to TAB G D S S Top View N-Channel MOSFET Absolute Maximum Ratings (TC = 25_C Unless Otherwise Noted)

Contextual Info: lili SEM E SMP600G-EK LAB MECHANICAL DATA _ P.I.N. PHOTODIODE Dimensions in mm. FEATURES • EXCELLENT LINEARITY • LOW NOISE • WIDEST SPECTRAL RESPONSE • . • • ENHANCED UV SENSITIVITY INTEGRAL OPTICAL FILTER OPTION note 1 T039 HERMETIC METAL CAN PACKAGE

Contextual Info: mi SMP600G-EL SEM E LAB MECHANICAL DATA Dimensions in mm. P.I.N. PHOTODIODE FEATURES • HIGH SENSITIVITY • EYE RESPONSE DETECTION • EXCELLENT LINEARITY • LOW NOISE • WIDE SPECTRAL RESPONSE • BG18 INTEGRAL OPTICAL FLTER • T039 HERMETIC METAL CAN PACKAGE

SMP600G-EM

Contextual Info: SMP600G-EM MECHANICAL DATA Dimensions in mm. P.I.N. PHOTODIODE FEATURES Ø 9.1 ± 0.2 Ø 8.1 ± 0.1 3.8 ± 0.2 WINDOW Ø 5.9 ± 0.1 • • • • • • • • 20 SE NSITIVE SURF ACE Ø 0.45 LEAD HIGH SENSITIVITY VISIBLE AND UV BLIND EXCELLENT LINEARITY

uv photodiode

Abstract: Infrared photodiode sensor photodiode response illumination SMP600G-FM high sensitivity photodiode visible light
Contextual Info: SMP600G-FM MECHANICAL DATA Dimensions in mm. P.I.N. PHOTODIODE FEATURES Ø 9.1 ± 0.2 Ø 8.1 ± 0.1 3.8 ± 0.2 WINDOW Ø 5.9 ± 0.1 • • • • • • • • • 20 SENSITIVE SURFACE Ø 0.45 LEAD HIGH SENSITIVITY VISIBLE AND UV BLIND PHOTODIODE ISOLATED FROM PACKAGE

Contextual Info: SMP60N05 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)50 V(BR)GSS (V)40 I(D) Max. (A)60 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)125 Minimum Operating Temp (øC)

Contextual Info: Illl Vrrr = mi SMP600G-EJ SEME LAB MECHANICAL DATA Dimensions in mm. P.I.N. PHOTODIODE FEATURES HIGH SENSITIVITY EXCELLENT LINEARITY LOW NOISE WIDE SPECTRAL RESPONSE INTEGRAL OPTICAL FILTER OPTION note 1 .T039 HERMETIC METAL CAN PACKAGE EMI SCREENING MESH AVAILABLE

Contextual Info: lili =MMË SEME SMP600G-EK LAB MECHANICAL DATA Dimensions in mm. P.I.N. PHOTODIODE FEATURES EXCELLENT LINEARITY LOW NOISE WIDEST SPECTRAL RESPONSE ENHANCED UV SENSITIVITY INTEGRAL OPTICAL FILTER OPTION note 1 T039 HERMETIC METAL CAN PACKAGE EMI SCREENING MESH AVAILABLE

Contextual Info: lili SEM E =MMË SMP600G-FM LAB MECHANICAL DATA Dimensions in mm. P.I.N. PHOTODIODE FEATURES • HIGH SENSITIVITY • VISIBLE AND UV BLIND W INDOW 0 5.9 + 0.1 4- • PHOTODIODE ISOLATED FROM PACKAGE . 0 8 .1 + 0.1 ^ ' i I • EXCELLENT LINEARITY

T0252

Abstract: SUP75NO8-I0 SUP60N06-18 D-PAK D2PAK SMP40P06 T0263 70220AB SMD10P05 T0-251
Contextual Info: Tem ic S e m i c o n d u c t o r s Power MOSFETs £ ' - ^ « ». J " V* , Tt i * ï ^ f I -4 .,iV " j V- .1 ,1 • r ÿ r / ï l / 'V • ; v i N-Channel Devices SMB60N03-10L 0.010 60 125 D2PAK T0263 SMP60N03-10L 0.010 60 105 TO220AB 0.03 30 50 DPAK (T0252)

Contextual Info: Illl Vrr r = mi SEM E SMP600G-EM LAB MECHANICAL DATA Dimensions in mm. P.I.N. PHOTODIODE FEATURES • HIGH SENSITIVITY • VISIBLE AND UV BLIND • EXCELLENT LINEARITY • LOW NOISE • WIDE SPECTRAL RESPONSE • RG850 INTEGRAL OPTICAL FLTER • T039 HERMETIC METAL CAN PACKAGE

SMP60N03-10L

Abstract: smp60n03
Contextual Info: SMP60N03-10L Siliconix N-Channel 30-V D-S , 150_C MOSFET, Logic Level Product Summary V(BR)DSS (V) rDS(on) (W) ID (A) 30 0.01 60 D TO-220AB G DRAIN connected to TAB G D S S Top View N-Channel MOSFET Absolute Maximum Ratings (TC = 25_C Unless Otherwise Noted)

SMP60N03-10L

Abstract: SMP60N03 a2005v
Contextual Info: SMP60N03Ć10L Siliconix NĆChannel EnhancementĆMode Transistor, Logic Level Product Summary V BR DSS (V) rDS(on) (W) ID (A) 30 0.01 60 D TOĆ220AB G DRAIN connected to TAB GD S S Top View NĆChannel MOSFET Absolute Maximum Ratings (TC = 25_C Unless Otherwise Noted)

LARGE SURFACE AREA PHOTODIODE

Abstract: SMP600G-EJ LARGE SURFACE AREA PHOTODIODE filter
Contextual Info: SMP600G-EJ MECHANICAL DATA Dimensions in mm. P.I.N. PHOTODIODE FEATURES 3.8 ± 0.2 WINDOW Ø 5.9 ± 0.1 Ø 9.1 ± 0.2 Ø 8.1 ± 0.1 20 SENSITIVE SURFACE Ø 0.45 LEAD • • • • • • • HIGH SENSITIVITY EXCELLENT LINEARITY LOW NOISE WIDE SPECTRAL RESPONSE

SMP60N06-18

Abstract: SMP60N06 SUP50N06-18 SMP60N06-18 power mosfet SUP50N06
Contextual Info: SMP60N06-18 N-Channel Enhancement-Mode Transistor, 18-mW rDS on Product Summary VDS (V) rDS(on) (W) ID (A) 60 0.018 60 See lowerĆcost version: SUP50N06Ć18 D TO-220AB G DRAIN connected to TAB G D S S Top View N-Channel MOSFET Absolute Maximum Ratings (TC = 25_C Unless Otherwise Noted)

Contextual Info: lili SEM E SMP600G-FK LAB MECHANICAL DATA n u A T A n .A n p P.I.N. PHOTODIODE Dimensions in mm. FEATURES • HIGH SENSITIVITY • WIDEST SPECTRAL RESPONSE • ENHANCED UV SENSITIVITY • PHOTODIODE ISOLATED FROM PACKAGE • • • • • EXCELLENT LINEARITY

high sensitivity photodiode visible light

Contextual Info: m i ËFFi LAB SEM E SMP600G-FM MECHANICAL DATA Dimensions in mm. P.I.N. PHOTODIODE FEATURES • HIGH SENSITIVITY • VISIBLE AND UV BLIND • PHOTODIODE ISOLATED FROM PACKAGE • EXCELLENT LINEARITY • LOW NOISE • • • • WIDE SPECTRAL RESPONSE RG850 INTEGRAL OPTICAL FLTER

SMP60N03-10L

Abstract: smp60n03 smp*60N03 smp60n03 datasheet SMP60N03-10L circuit
Contextual Info: SMP60N03-10L N-Channel Enhancement-Mode Transistor, Logic Level Product Summary V BR DSS (V) rDS(on) (W) ID (A) 30 0.01 60 D TO-220AB G DRAIN connected to TAB G D S S Top View N-Channel MOSFET Absolute Maximum Ratings (TC = 25_C Unless Otherwise Noted) Parameter

Contextual Info: lili =MMË SEM E SMP600G-FN LAB MECHANICAL DATA Dimensions in mm. P.I.N. PHOTODIODE FEATURES HIGH SENSITIVITY WIDE RECEIVING ANGLE PHOTODIODE ISOLATED FROM PACKAGE EXCELLENT LINEARITY LOW NOISE WIDE SPECTRAL RESPONSE WIDE INTRINSIC BANDWIDTH INTEGRAL OPTICAL FILTER OPTION note 1

Contextual Info: lili =MMË SEME SMP600G-FJ LAB MECHANICAL DATA Dimensions in mm. P.I.N. PHOTODIODE FEATURES HIGH SENSITIVITY PHOTODIODE ISOLATED FROM PACKAGE W INDOW 0 5.9 + 0.1 4- EXCELLENT LINEARITY . 0 8 .1 + 0.1 ^ ' i I LOW NOISE r~ : j WIDE SPECTRAL RESPONSE

Contextual Info: lili SEM E =MMË SMP600G-EN LAB MECHANICAL DATA Dimensions in mm. P.I.N. PHOTODIODE FEATURES HIGH SENSITIVITY WIDE RECEIVING ANGLES EXCELLENT LINEARITY LOW NOISE WIDE SPECTRAL RESPONSE WIDE INTRINSIC BANDWIDTH INTEGRAL OPTICAL FILTER OPTION note 1 T039 HERMETIC METAL CAN PACKAGE

SMP60N06-18

Abstract: SMP60N06 SMP60N06-18 power mosfet data sheet SMP60N06 SUP50N06 SUP50N06-18
Contextual Info: SMP60N06-18 N-Channel Enhancement-Mode Transistor, 18-mW rDS on Product Summary VDS (V) rDS(on) (W) ID (A) 60 0.018 60 See lowerĆcost version: SUP50N06Ć18 D TO-220AB G DRAIN connected to TAB G D S S Top View N-Channel MOSFET Absolute Maximum Ratings (TC = 25_C Unless Otherwise Noted)