TRANSISTOR OE 4K Search Results

A011 transistor

Contextual Info: THIS SPEC IS OBSOLETE Spec No: 38-06037 Spec Title: CY7C138 4K X 8/9 DUAL-PORT STATIC RAM WITH SEM , INT, BUSY Sunset Owner: Adithi Perepu Replaced by: NONE CY7C138 4K x 8/9 Dual-Port Static RAM with Sem, Int, Busy Features Functional Description • True dual-ported memory cells that enable simultaneous reads

CY7C

Abstract: a7l transistor A011 transistor CY7C138 CY7C138-25JXC CY7C138-25JXI
Contextual Info: CY7C138 4K x 8/9 Dual-Port Static RAM with Sem, Int, Busy Features Functional Description • True dual-ported memory cells that enable simultaneous reads of the same memory location ■ 4K x 8 organization CY7C138 ■ 0.65-micron complementary metal oxide semiconductor

7133 A-1

Abstract: 7130 AN-91 transistor mark l6 IDT7024 IDT7025 signal path designer
Contextual Info: THE MOST COMMONLY ASKED QUESTIONS ABOUT DUAL PORTS APPLICATION NOTE AN-91 Integrated Device Technology, Inc. By Mark Baumann WHAT IS A DUAL PORT? A dual port RAM is exactly what it sounds like. It is a single static RAM array with separate address, data, and control

H11AV1

Abstract: H11AV2 H11AV3 H11AV1A H11AV2A H11AV3A diode b3l
Contextual Info: MOTOROLA SC DIO D ES/O PTO b4E Ï • b3b725S 0 0 f lb b 43 S T P ■ f l O T ? MOTOROLA SEMICONDUCTOR TECHNICAL DATA 4k TO ca VDE UL C SA SETI BS ® SEMKO DEMKO BABT NEM KO H 1 1 A V 1 ,A * [CTR = 100% Min] H 11 A V 2 ,A 6-Pin D IP O p to is o la to rs

Contextual Info: Preliminary information •■ AS7C181026LL A 1.8V 6 4K x 16 lntelliwatt,v low power CM O S SRAM Features • • • • • • • • • Optimized design for battery operated portable systems Intelliwatt active power reduction circuitry Organization: 65,536 words x 16 bits

HX6409

Abstract: D1878
Contextual Info: Aerospace Electronics FIFO—SOI HX6409 HX6218 HX6136 FEATURES • 1K x 36, 2K x 18, 4K x 9 Organizations OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.8 µm Process (Leff = 0.65µm) • Read/Write Cycle Times <35 ns (-55° to 125°C)

HX6409

Contextual Info: Aerospace Electronics FIFO—SOI HX6409 HX6218 HX6136 FEATURES • 1K x 36, 2K x 18, 4K x 9 Organizations OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.8 µm Process (Leff = 0.65µm) • Read/Write Cycle Times <35 ns (-55° to 125°C)

Z80A

Abstract: Z80A CPU z80a-cpu sense amplifier bitline memory device Application Note 02 datasheet and application 7217 idt7134 MICROPROCESSOR 68000 2kx8 interfacing IDT7050
Contextual Info: INTRODUCTION TO IDT's FourPort RAM APPLICATION NOTE AN-45 Integrated Device Technology, Inc. By John R. Mick INTRODUCTION Integrated Device Technology is continuing to pioneer higher speed and higher density static RAMs. As IDT has improved its CEMOS™ technology, new RAM architectures and additional features have become feasible. The end result is that

Z80A

Abstract: Z80A CPU z80a-cpu 4Kx8 Dual-Port Static RAM sense amplifier bitline memory device datasheet and application 7217 IDT7027 AN-45 IDT7052 IDT7054
Contextual Info: INTRODUCTION TO IDT's FourPort SRAM APPLICATION NOTE AN-45 Integrated Device Technology, Inc. By John R. Mick INTRODUCTION Integrated Device Technology is continuing to pioneer higher speed and higher density static RAMs. As IDT has improved its CMOS technology, new SRAM architectures and

Contextual Info: Honeywell Military & Space Products FIFO— SOI HX6409 HX6218 HX6136 FEATURES • 1K x 36, 2K x 18, 4K x 9 Organizations OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.8 |a,m Process (Leff = 0.65|a,m) • Read/Write Cycle Times <35 ns (-55° to 125°C)

Z80A

Abstract: Z80A-CPU Z80A CPU 16 bit processor schematic 2kx8 EPROM SRAM 6116 4Kx8 Dual-Port Static RAM datasheet and application 7217 MICROPROCESSOR 68000 AN-45
Contextual Info: INTRODUCTION TO IDT's FourPort SRAM APPLICATION NOTE AN-45 By John R. Mick Introduction system performance and reduce parts count by providing simultaneous access to the data by more than one processor at a time. Integrated Device Technology is continuing to pioneer higher speed

4Kx8 Dual-Port Static RAM

Abstract: Z80A Z80A CPU z80a-cpu 128 byte dual port memory sense amplifier bitline memory device 16 bit processor schematic datasheet and application 7217 DSP CPU non-recursive filter decoder AN-45
Contextual Info: INTRODUCTION TO IDT's FourPort SRAM APPLICATION NOTE AN-45 By John R. Mick Introduction system performance and reduce parts count by providing simultaneous access to the data by more than one processor at a time. Integrated Device Technology is continuing to pioneer higher speed

transistor A7

Abstract: HM5116100 HM534251B HM538123B HM62256 HM658512A low vce transistor hitachi eprom Hitachi DSA00503 Hitachi HM62256
Contextual Info: Application 1. Static RAM 1.1 Static RAM Memory Cell A memory cell used in Hitachi static RAM consists of 4 NMOS transistors and 2 load resistors as shown in Figure 1-1. The data in the cell can be retained as long as power is supplied, and read out without being

ST2149QTR

Abstract: ST2149 QFN16L ST2149Q
Contextual Info: ST2149 4-bit dual supply level translator without direction control pin Features • 42 MHz: 84 Mbps max data rate at VL = 1.8 V, VCC = 3.3 V ■ Bidirectional level translation without direction control pin ■ Wide voltage range (VCC ≥ VL): – VL ranges from 1.65 to 3.6 V

holtek sound chip

Contextual Info: HOLTEK r r HT82013 ADPCM Synthesizer with External ROMs Features • • • • • • • • Operating voltage: 3.5V~5.0V Directly interface with external parallel ROMs Size of external parallel ROMs up to 8Mbx3 12-bit analysis and 3 bit ADPCM coding algorithm

Contextual Info: Honeywell Military & Space Products Preliminary FIFO—SOI HX6409 HX6218 HX6136 FEATURES • 1K x 36, 2K x 18, 4K x 9 Organizations OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.8 n.m Process (Lelf = 0.65}im) • Read/Write Cycle Times

transistor KSP 42

Abstract: irf950 IRFP100 transistor KSP 56 transistor KSP 92 G 23 ksp 36 93 IRF9500 transistor KSP 13 Samsung "NAND Flash" "ordering information" IRFP p-channel
Contextual Info: ORDERING INFORMATION KSV 3100A C N/ + BURN-IN OPTIONAL (SEE BURN-IN PROGRAM) PACKAGE TYPE (SEE EACH SPEC OF DEVICE) OPERATING TEMP IC’S ONLY BLANK: SEE INDIVIDUAL SPEC C : 0 - 70°C I : - 40 - 85°C M : - 5 5 - + 125°C DEVICE NUMBER AND SUFFIX (OPTIONAL)

schematic inductive proximity sensor

Abstract: wheatstone bridge connected to ad624 honeywell inductive detector hall sensor 4-pin cd rom driver honeywell v3 "inductive sensor" marking code GBK isolated voltage sensor 1mhz Magnetic stripe card encoders schematics HONEYWELL* gradiometer schematic inductive speed sensor
Contextual Info: GMR Sensors Data Book April 2003 NVE Corporation 11409 Valley View Road, Eden Prairie, Minnesota, 55344 USA 800 467-7141 Web: www.nve.com Email: info@nve.com 04/28/03 Applications for NVE GMR Sensors • • • • • • • • • • • • • •

Contextual Info: HOW TO USE DRAM 1994, 1992 1995, 1996 Document No. M10339EJ3V0UM00 3rd edition Date Published July 1996 P Printed in Japan NOTES FOR CMOS DEVICES 1 PRECAUTION AGAINST ESD FOR SEMICONDUCTORS Note: Strong electric field, when exposed to a MOS device, can cause destruction of the gate oxide and

Contextual Info: Honeywell Military & Space Products HX6409 HX6218 HX6136 FIFO— SOI FEATURES • 1K x 36, 2K x 18, 4K x 9 Organizations OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.8 jim Process (Leff = 0.65|am) • Read/Write Cycle Times <35 ns (-55° to 125°C)

Contextual Info: Honeywell Military & Space Products FIFO—SOI HX6409 HX6218 HX6136 FEATURES • 1K x 36, 2K x 18, 4K x 9 Organizations • Fabricated with RICMOS IV Silicon on Insulator SOI 0.8 jam Process (Leff = 0.65|im) OTHER • Read/Write Cycle Times <35 ns (-55° to 125°C)

PJ 1169

Contextual Info: USER’S MANUAL O f C Corporation 1 9 9 4 ,1 9 9 5 .1 9 9 6 NEC Document No. M10339EJ3V0UM00 3rd edition Date Published July 1996 P Printed in Japan Rambus Is a trademark of Rambus Inc. The Information In this document is subject to change without notice.

Contextual Info: 12-Nov-13 Contact : Gonzalo Picún +32-10-489214 Nov. 13 CHT-MAGMA - DATASHEET (Last Modification Date) CHT-MAGMA DATASHEET Version: 1.7 12-Nov-13 (Last Modification Date) High Temperature PWM Controller General Description Features MAGMA is a High Temperature Pulse

M2128-15

Abstract: M2764 M8748 M8755A M8251A EPROM M2764 intel 8251 m8288 MR8259 5PCA
Contextual Info: LEADLESS CHIP CARRIERS LCC Product List Intel's Military Products are available in the JEDEC Leadless Chip Carrier Type C, E, and F. All Intel military products are processed to the reliability and quality standards of MIL-STD-883B. STATIC RAMS Organization