TRANSISTOR N6 Search Results
TRANSISTOR N6 Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
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| BLA1011-300 | Rochester Electronics LLC | BLA1011-300 - 300W LDMOS Avionics Power Transistor |
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| 54F151LM/B | Rochester Electronics LLC | 54F151 - Multiplexer, 1-Func, 8 Line Input, TTL |
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| 93L422ADM/B | Rochester Electronics LLC | 93L422A - 256 x 4 TTL SRAM |
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| 54F151/BEA | Rochester Electronics LLC | 54F151 - Multiplexer, 1-Func, 8 Line Input, TTL, CDIP16 - Dual marked (M38510/33901BEA) |
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| 54F573FM/B | Rochester Electronics LLC | 54F573 - Bus Driver, F/FAST Series, 1-Func, 8-Bit, True Output, TTL, |
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TRANSISTOR N6 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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transistor
Abstract: POWER MOS FET 2sj 2sk transistor 2sk 2SK type n channel fet array Low frequency power transistor transistor mp40 TRANSISTOR P 3 high hfe transistor list
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x13769xj2v0cd00o-126mp-25o-220+15 | |
MN1280
Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
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mn1280kgt50n60kdabc547 smd transistorkia1117af+6 | |
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Contextual Info: NSM11156DW6T1G Dual PNP Transistors General Purpose PNP Transistor and PNP Transistor with Monolithic Bias Network NSM11156DW6T1G contains a single PNP transistor and a monolithic bias network PNP transistor with two resistors; a series base resistor and a base-emitter resistor. This device is designed to |
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nsm11156dw6t1gsc-88/sot-363nsm11156dw6/d | |
419B-02
Abstract: NSM11156DW6T1G marking .544 sot363
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nsm11156dw6t1gsc-88/sot-363nsm11156dw6/d419b-02+1 | |
la 4440 amplifier circuit diagram 300 watt
Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
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an-784ala 4440 amplifier circuit diagram 300 wattla 4440 amplifier circuit diagram 300 wattdiode lt 7229+7 | |
transistor BD 800
Abstract: transistor BD 110
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a235bq5q62702-d905q62902-b63q62902-b62+2 | |
RT3N66MContextual Info: PRELIMINARY RT3N66M Composite Transistor With Resistor For Switching Application Silicon Epitaxial Type OUTLINE DRAWING DESCRIPTION is a composite transistor built with 2.1 RT1N430 chip and RT1N430 chip in SC-88 package. 1.25 2.0 Each transistor elements are independent. |
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rt3n66mrt1n430sc-88jeitasc-88 | |
1N60E
Abstract: N60E MGP11N60E
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1n60emgp11n60e30h7g2140wi-2447+2 | |
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Contextual Info: 2 N6428/6428A NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR • Collector-Emitter Voltage: V ceo =50V • Collector Dissipation: Pc max =625mW ABSOLUTE MAXIMUM RATINGS (Ta =25°C) Characteristic Symbol Rating Unit VcBO V ceo V ebo lc Pc Tj Tstg 60 |
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n6428/6428a625mw2n508810khz | |
N60E
Abstract: MGW21N60ED MGW21 TME 86 T247
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mgw21n60ed/dmgw21n60ed140w41+6 | |
N60EContextual Info: MOTOROLA Order this document by MGP21 N60E/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet Insulated Gate Bipolar Transistor MGP21N60E N-Channel Enhancement-Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced term ination schem e to provide an enhanced and reliable high |
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mgp21n60e/dmgp21n60edn60e | |
2SA1444 equivalent
Abstract: BA1F4M transistor equivalent table POWER MOS FET 2sj 2sk 2sd882 equivalent Equivalent to transistor 2sc945 2SA1206 TRANSISTOR equivalent 2SC1845 equivalent 2SK type 2SD1694 equivalent
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x13769xj2v0cd002sa12062sc16742sa988+16 | |
2N6428AContextual Info: 2 N6428/6428A NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR T O -92 • C ollector-E m itter Voltage: VCeo= 50V • C ollector D issipation: Pc m ax =625m W ABSOLUTE MAXIMUM RATINGS (TA=25°C) C haracteristic Sym bol Col lector-Base Voltage C ollector-E m itter Voltage |
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n6428/6428a2n6428a | |
diode lt 238
Abstract: 21N60ED
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mgw21n60ed/dmgw21n60ed/ddiode lt 238+1 | |
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MRC034
Abstract: MRC036 MRC031 BFS25A RF NPN POWER TRANSISTOR 3 GHZ Replacement Handbook MRC053
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bfs25aot323mbc870r77/03/pp13+6 | |
y51 h 120c
Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
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500ma240mwfy51 h 120cbd124+8 | |
sx3704
Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
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sx3704ap239transistor 801398c547+6 | |
RCA H 541
Abstract: 2T312 2N2654 AS218 transistor gex 74a diode germanium 1n283 K3004 TFK diode ac132 TI-483
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rca h 5412t3122n2654as218 transistor+6 | |
transistor smd marking CODE n6
Abstract: PBSS4220V PBSS5220V MARKING CODE SMD IC
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pbss4220vot666pbss5220vtransistor smd marking code n6+1 | |
transistor smd marking CODE n6
Abstract: PBSS4220V PBSS5220V
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pbss4220vot666pbss5220vtransistor smd marking code n6 | |
BT816
Abstract: TA114E a768 transistor b722 B861 B718 equivalent transistor TT 3034 C785 transistor b714 transistor B728
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mm/13o-92sbt816ta114e+8 | |
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Contextual Info: PBSS4220V 20 V, 2 A NPN low VCEsat BISS transistor Rev. 02 — 11 December 2009 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT666 Surface Mounted Device (SMD) plastic package. |
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pbss4220vot666pbss5220v | |
LG color tv Circuit Diagram schematics
Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
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3186jlg color tv circuit diagram schematicsfree transistor equivalent book 2scnpn transistors list according to current, voltag+7 | |
IC HXJ 2038
Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
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ic hxj 20381n52398db5ttfk 102 cny 70+6 | |