KHB4D0N65F2 Search Results

4D0N65F

Abstract: KHB4D0N65F2 khb*4D0N65f khb4d0n65
Contextual Info: SEMICONDUCTOR KHB4D0N65F2 MARKING SPECIFICATION TO-220IS PACKAGE 1. Marking method Laser Marking 2. Marking 1 KHB 4D0N65F 2 No. 2007. 5. 23 713 2 Item Marking Description Device Name KHB4D0N65F2 KHB4D0N65F2 Lot No. 713 Revision No : 0 7 Year 0~9 : 2000~2009

khb*4D0N65f

Abstract: KHB4D0N65F2 KHB4D0N65F KHB4D0N65P
Contextual Info: SEMICONDUCTOR KHB4D0N65P/F/F2 TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KHB4D0N65P A This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for switch mode power

MN1280

Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
Contextual Info: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor

Contextual Info: SEMICONDUCTOR KHB4D0N65P/F/F2 TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KHB4D0N65P A This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for switch mode power