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    onsemi FCP190N60E

    Power MOSFET N-Channel SUPERFET® II Easy Drive 600 V 20.6 A 190 mΩ TO-220
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    Master Electronics FCP190N60E
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    Richardson RFPD FCP190N60E 800
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    Avnet Asia FCP190N60E 64 Weeks 800
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    Wuhan P&S FCP190N60E 13,600 1
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    onsemi FCPF380N60E

    Power MOSFET N-Channel SUPERFET® II Easy Drive 600 V 10.2 A 380 mΩ TO-220F
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    Master Electronics FCPF380N60E
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    Rochester Electronics FCPF380N60E 2,715 1
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    Flip Electronics FCPF380N60E 109,200
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    onsemi FCH041N60E

    Power MOSFET N-Channel SUPERFET® II Easy Drive 600 V 77 A 41 mΩ TO-247
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    Master Electronics FCH041N60E
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    Richardson RFPD FCH041N60E 450
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    Avnet Asia FCH041N60E 58 Weeks 450
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    Flip Electronics FCH041N60E 2,250
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    onsemi FCH070N60E

    Power MOSFET N-Channel SUPERFET® II Easy Drive 600 V 52 A 70 mΩ TO-247
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    Master Electronics FCH070N60E
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    Rochester Electronics FCH070N60E 274 1
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    Vyrian FCH070N60E 213
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    Wuhan P&S FCH070N60E 4,950 1
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    Vishay Intertechnologies SIHD240N60E-GE3

    N-CHANNEL 600V - Tape and Reel (Alt: SIHD240N60E-GE3)
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    Avnet Americas SIHD240N60E-GE3 Tape & Reel 9,000 3,000
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    TTI SIHD240N60E-GE3 Reel 3,000 3,000
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    N60E Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: MOTOROLA Order this document by MGP11 N60ED/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet M G P 1 1 N 6 0 ED Insulated G ate Bipolar Transistor w ith A n ti-P arallel Diode N-Channel Enhancement-Mode Silicon Gate IGBT & DIODE IN T 0-2 20 11 A @ 90°C


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    mgp11n60ed/dmgp11n60ed/d PDF

    diode lt 238

    Abstract: 21N60ED
    Contextual Info: MOTOROLA Order this document by MGW21 N60ED/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet M G W 21N 60ED Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT is co-packaged with a soft recovery u ltra -fa s t rectifier and uses an advanced


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    mgw21n60ed/dmgw21n60ed/ddiode lt 238+121n60ed PDF

    N60E

    Contextual Info: MOTOROLA Order this document by MGP21 N60E/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet Insulated Gate Bipolar Transistor N60E N-Channel Enhancement-Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced term ination schem e to provide an enhanced and reliable high


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    mgp21n60e/dmgp21n60edn60e PDF

    Contextual Info: MOTOROLA O rder this docum ent by M G N60ED/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M G P11 N60ED Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel Enhancement-Mode Silicon Gate IGBT & DIODE IN T 0 -2 2 0 11 A @ 9 0 ° C


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    p11n60ed/dn60ed PDF

    Contextual Info: MOTOROLA Order this document by N60ED/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M G P11 N60ED In sulate d G ate Bipolar T ransistor w ith A n ti-P aralle l Diode N-Channel Enhancement-Mode Silicon Gate IGBT & DIODE IN T 0 -2 2 0 11 A @ 90°C


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    mgp11n60ed/d PDF

    N60E

    Abstract: MGW21N60ED MGW21 TME 86 T247
    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL Order this document by N60ED/D DATA — Preliminary — lnsuiated Gate Bipolar Transistor Data Sheet MGW21 N60ED N-Channel Enhancement-Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT is co–packaged with a soft recovery ultra-fast rectifier and uses an advanced


    Original
    mgw21n60ed/dmgw21n60ed140w41+624h609n60ed/dn60emgw21n60edtme 86t247 PDF

    Pi filter

    Abstract: CM1460-06DE CM1460-08DE N60E TDFN-12 CM1460 CM1460-04DE
    Contextual Info: Praetorian C-L-C LCD and Camera EMI FilterArray with ESD Protection CM1460 Features Product Description • The CM1460 is a family of pi-style EMI filter arrays with ESD protection, which integrates four, six and eight filters C-L-C in small form factor TDFN


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    cm146015pf-17nh-15pf350mhz140mbps+7800mhzpi filtercm1460-06decm1460-08den60etdfn-12cm1460-04de PDF

    1N60E

    Abstract: N60E MGP11N60E
    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL Order this document by MGPll N60m DATA DesignerSTM Data Sheet MGPI N60E insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced termination scheme to provide an enhanced and reliable high


    Original
    1n60emgp11n60e30h7g2140wi-2447+2mgp11n60udn60e PDF

    triac mw 131 600d

    Abstract: 65n06
    Contextual Info: / 20 13 -2 01 4 Nell,your reliable green partner Europe North America China Taiwan ,Taipei Africa South America Oceania Evolving green Innovation and Future Worldwide Presence Headquarter TEL FAX E-Mail Nell semiconductor Taiwan,Taipei +886-2-26474181 +886-2-26429717


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    triac mw 131 600d65n06 PDF

    Pi filter

    Abstract: N60E california micro devices tdfn top marking TDFN-6 datasheet n60e CM1460 CM1460-04DE CM1460-06DE CM1460-08DE TDFN-12
    Contextual Info: CM1460 Praetorian L-C LCD and Camera EMI Filter Array with ESD Protection Features Product Description • California Micro Devices’ CM1460 is a family of pi-style EMI filter arrays with ESD protection, which integrates four, six and eight filters C-L-C in small form factor


    Original
    cm146015pf-17nh-15pf350mhz140mbps+12800mhzprotec12mo-229cpi filtern60ecalifornia micro devices tdfn top markingtdfn-6datasheet n60ecm1460-04decm1460-06decm1460-08detdfn-12 PDF

    14 pin mobile phone camera pinout

    Abstract: n60e WDFN-8 2x2
    Contextual Info: CM1460 Praetorian C-L-C LCD and Camera EMI Filter Array with ESD Protection Product Description The CM1460 is a family of pi−style EMI filter arrays with ESD protection, which integrates four, six and eight filters C−L−C) in small form factor WDFN 0.50 mm pitch packages. Each EMI filter


    Original
    cm1460cm1460/d14 pin mobile phone camera pinoutn60e+1wdfn-8 2x2 PDF

    Contextual Info: CM1460 Praetorian C-L-C LCD and Camera EMI Filter Array with ESD Protection Product Description The CM1460 is a family of pi−style EMI filter arrays with ESD protection, which integrates four, six and eight filters C−L−C) in small form factor WDFN 0.50 mm pitch packages. Each EMI filter


    Original
    cm1460cm1460/d PDF

    N60E

    Abstract: PHP10N60E T0220AB
    Contextual Info: Product specification Philips Semiconductors PowerMOS transistors N60E Avalanche energy FEATURES • • • • • SYMBOL QUICK REFERENCE DATA d Repetitive Avalanche Rated Fast switching Stable off-state characteristics


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    php10n60et0220abt0220n60e PDF