N60E Search Results

Contextual Info: MOTOROLA Order this document by MGP11 N60ED/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet M G P 1 1 N 6 0 ED Insulated G ate Bipolar Transistor w ith A n ti-P arallel Diode N-Channel Enhancement-Mode Silicon Gate IGBT & DIODE IN T 0-2 20 11 A @ 90°C

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Abstract: 21N60ED
Contextual Info: MOTOROLA Order this document by MGW21 N60ED/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet M G W 21N 60ED Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT is co-packaged with a soft recovery u ltra -fa s t rectifier and uses an advanced

N60E

Contextual Info: MOTOROLA Order this document by MGP21 N60E/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet Insulated Gate Bipolar Transistor N60E N-Channel Enhancement-Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced term ination schem e to provide an enhanced and reliable high

Contextual Info: MOTOROLA O rder this docum ent by M G N60ED/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M G P11 N60ED Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel Enhancement-Mode Silicon Gate IGBT & DIODE IN T 0 -2 2 0 11 A @ 9 0 ° C

Contextual Info: MOTOROLA Order this document by N60ED/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M G P11 N60ED In sulate d G ate Bipolar T ransistor w ith A n ti-P aralle l Diode N-Channel Enhancement-Mode Silicon Gate IGBT & DIODE IN T 0 -2 2 0 11 A @ 90°C

N60E

Abstract: MGW21N60ED MGW21 TME 86 T247
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL Order this document by N60ED/D DATA — Preliminary — lnsuiated Gate Bipolar Transistor Data Sheet MGW21 N60ED N-Channel Enhancement-Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT is co–packaged with a soft recovery ultra-fast rectifier and uses an advanced

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Abstract: CM1460-06DE CM1460-08DE N60E TDFN-12 CM1460 CM1460-04DE
Contextual Info: Praetorian C-L-C LCD and Camera EMI FilterArray with ESD Protection CM1460 Features Product Description • The CM1460 is a family of pi-style EMI filter arrays with ESD protection, which integrates four, six and eight filters C-L-C in small form factor TDFN

1N60E

Abstract: N60E MGP11N60E
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL Order this document by MGPll N60m DATA DesignerSTM Data Sheet MGPI N60E insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced termination scheme to provide an enhanced and reliable high

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Abstract: 65n06
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Abstract: N60E california micro devices tdfn top marking TDFN-6 datasheet n60e CM1460 CM1460-04DE CM1460-06DE CM1460-08DE TDFN-12
Contextual Info: CM1460 Praetorian L-C LCD and Camera EMI Filter Array with ESD Protection Features Product Description • California Micro Devices’ CM1460 is a family of pi-style EMI filter arrays with ESD protection, which integrates four, six and eight filters C-L-C in small form factor

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Abstract: n60e WDFN-8 2x2
Contextual Info: CM1460 Praetorian C-L-C LCD and Camera EMI Filter Array with ESD Protection Product Description The CM1460 is a family of pi−style EMI filter arrays with ESD protection, which integrates four, six and eight filters C−L−C) in small form factor WDFN 0.50 mm pitch packages. Each EMI filter

Contextual Info: CM1460 Praetorian C-L-C LCD and Camera EMI Filter Array with ESD Protection Product Description The CM1460 is a family of pi−style EMI filter arrays with ESD protection, which integrates four, six and eight filters C−L−C) in small form factor WDFN 0.50 mm pitch packages. Each EMI filter

N60E

Abstract: PHP10N60E T0220AB
Contextual Info: Product specification Philips Semiconductors PowerMOS transistors N60E Avalanche energy FEATURES • • • • • SYMBOL QUICK REFERENCE DATA d Repetitive Avalanche Rated Fast switching Stable off-state characteristics