MGP11 Search Results

MGP11N60E

Contextual Info: MOTOROLA Order this document by MGP11N60E/D SEMICONDUCTOR TECHNICAL DATA Designer's  Data Sheet MGP11N60E Insulated Gate Bipolar Transistor N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced termination scheme to provide an enhanced and reliable high

MGP11N60ED

Contextual Info: MOTOROLA Order this document by MGP11N60ED/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet Insulated Gate Bipolar Transistor with Anti-Parallel Diode Designer's MGP11N60ED N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT is co–packaged

11n60

Contextual Info: MOTOROLA Order this document by MGP11N60DE/D SEMICONDUCTOR TECHNICAL DATA Product Preview Data Sheet MGP11N60DE In sulated G ate Bipolar TVansistor with A n ti-P arallel Diode IGBT & DIODE IN T0-220 11 A @ 90°C 15 A @ 25°C 600 VOLTS SHORT CIRCUIT RATED LOW ON-VOLTAGE

MGP11N60DE

Abstract: 221A-06
Contextual Info: MOTOROLA Order this document by MGP11N60DE/D SEMICONDUCTOR TECHNICAL DATA Product Preview Data Sheet MGP11N60DE Insulated Gate Bipolar Transistor with Anti-Parallel Diode N–Channel Enhancement Mode Silicon Gate IGBT & DIODE IN TO–220 11 A @ 90°C 15 A @ 25°C

Contextual Info: MOTOROLA Order this document by MGP11 N60ED/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet M G P 1 1 N 6 0 ED Insulated G ate Bipolar Transistor w ith A n ti-P arallel Diode N-Channel Enhancement-Mode Silicon Gate IGBT & DIODE IN T 0-2 20 11 A @ 90°C

MGP11N60ED

Contextual Info: MOTOROLA Order this document by MGP11N60ED/D SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet Insulated Gate Bipolar Transistor with Anti-Parallel Diode MGP11N60ED N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT is co–packaged

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet MGP11N60ED Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel Enhancement-Mode Silicon Gate IGBT & DIODE IN T0-220 11 A @ 90°C 15 A @ 25°C 600 VOLTS SHORT CIRCUIT RATED LOW ON-VOLTAGE

MGP11N60E

Contextual Info: MOTOROLA Order this document by MGP11N60E/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet MGP11N60E Designer's Insulated Gate Bipolar Transistor N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced termination scheme to provide an enhanced and reliable high

Contextual Info: MOTOROLA Order this document by MGP11N60E/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet M GP11N6 0 E Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced termination scheme to provide an enhanced and reliable high

Contextual Info: MOTOROLA Order this document by MGP11N60ED/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M G P11 N60ED In sulate d G ate Bipolar T ransistor w ith A n ti-P aralle l Diode N-Channel Enhancement-Mode Silicon Gate IGBT & DIODE IN T 0 -2 2 0 11 A @ 90°C

MGP11N60E

Contextual Info: MOTOROLA Order this document by MGP11N60E/D SEMICONDUCTOR TECHNICAL DATA Designer's  Data Sheet MGP11N60E Insulated Gate Bipolar Transistor N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced termination scheme to provide an enhanced and reliable high

MGP11N60E

Contextual Info: MOTOROLA Order this document by MGP11N60E/D SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet Insulated Gate Bipolar Transistor MGP11N60E N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced termination scheme to provide an enhanced and reliable high

STR-G6551

Abstract: STR-F6654 g6551 TDA16822 STR-F6653 strg6551 IGBT cross reference KA5M0565R TOP224Y equivalent BUP 312
Contextual Info: Cross Reference, V1.0, Apr. 2002 Alphanumerical Cross Reference CoolMOSTM/IGBT/EmConTM/CoolSETTM Power Management & Supply N e v e r s t o p t h i n k i n g . Alphanumerical Cross Reference Revision History: 2002-04 V1.0 Previous Version: Page Subjects major changes since last revision

transistor marking code 12W SOT-23

Abstract: MGB20N40CL laptop charging crb kp series stepper motor japan servo co 2n3773 power Amplifier circuit diagrams MJ2955 TRANSISTOR pwm brush dc motor controller sg3526 SG3526 boost controller for PWM fan tl494 tip122 tip127 mosfet audio amp
Contextual Info: SG388/D Rev. 1, Aug-1999 ON Semiconductor PUBLICATION ORDERING INFORMATION USA/EUROPE Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5193, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada

1N60E

Abstract: N60E MGP11N60E
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL Order this document by MGPll N60m DATA DesignerSTM Data Sheet MGPI 1N60E insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced termination scheme to provide an enhanced and reliable high

Contextual Info: MOTOROLA O rder this docum ent by M GP11N60E/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet M GP11N60E In sulate d G ate Bipolar T ransistor N-Channel Enhancement-Mode Silicon Gate T his Insulated G ate B ip olar T ra n sisto r IG BT uses an advanced

SSP35n03

Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
Contextual Info: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A

MBK150

Abstract: BLF202 8830 transistor
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D175 BLF202 HF/VHF power MOS transistor Product specification Supersedes data of 1999 Oct 20 2003 Sep 19 Philips Semiconductors Product specification HF/VHF power MOS transistor BLF202 FEATURES PINNING - SOT409A • High power gain

Contextual Info: DISCRETE SEMICONDUCTORS DAT M3D175 BLF202 HF/VHF power MOS transistor Product specification Supersedes data of 1999 Oct 20 2003 Sep 19 Philips Semiconductors Product specification HF/VHF power MOS transistor BLF202 FEATURES PINNING - SOT409A • High power gain

SGH80N60RUFD

Abstract: bup314 equivalent bup314d SGH30N60UFD SGU06N60 BUP314 motorola diode cross reference mgy20n120d IXDH30N120AU1 SGP15N120
Contextual Info: Infineon Technologies Cross Reference List Fast IGBT & DuoPack Company Product Name Fairchild * Fairchild (*) Fairchild (*) Fairchild (*) Fairchild (*) Fairchild (*) Fairchild (*) Fairchild (*) Fairchild (*) Fairchild (*) Fairchild (*) Fairchild (*) Fairchild (*)

HC08MP16

Abstract: ac motor speed control circuit diagram with IGBT schematic diagram motor control using pwm module 1 HP SINGLE PHASE induction motor speed control using pwm inverter use igbt for 3 phase induction motor PWM generator for IGBT DC MOTOR SPEED CONTROL USING IGBT MGB20N40CL circuit diagram MC33153 12 volt dc to 220 volt ac inverter schematic
Contextual Info: BR1480/D Silicon Solutions for Off Line Motor Drives • Application Specific MCU’s • Optoisolators • MOS Gate Drivers and Control IC’s • Discrete Insulated Gate Bipolar Transistors • Input Rectifiers • Hybrid IGBT Power Modules • High Voltage MOSFETS for Power Supply

hall marking code A04

Abstract: M143206EVK differences uc3842a uc3842b toshiba satellite laptop battery pinout 2N3773 audio amplifier diagram toshiba laptop battery pack pinout BC413 motorola transistor sj 5812 M68HC705X16 ABB inverter motor fault code
Contextual Info: Introduction Advanced Digital r i Consumer Products L-l Microcomputer Components [2 Logic: Standard, Special p , and Programmable I-5* Analog and Interface Integrated Circuits Semiconductor r= Components Group L5 Product Literature and r~ Technical Training L”

GP11N

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet M GP11N 6 0 E Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced termination scheme to provide an enhanced and reliable high

tl4311

Abstract: SOP23-5 2N4920 LM337B uc3842a uc3842b MGB20N40CLT4 sg3526 bc558b TO-266AA mje150
Contextual Info: SG388CH/D 2000
4   2 



    SG388CH/D 2000
3   2  SCILLC,2000
 © 1999 “” http://onsemi.com.cn
        SCI LLC      ./012 !"#$%&'()*+,%?./14*+=* )NO @ A L M N O