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    GP11N60E Search Results

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    Motorola Semiconductor Products MGP11N60ED

    Trans IGBT Chip N-CH 600V 15A 96W 3-Pin(3+Tab) TO-220
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    Bristol Electronics MGP11N60ED 1,493
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    onsemi MGP11N60ED

    Insulated Gate Bipolar Transistor, 15A I(C), 600V V(BR)CES, N-Channel, TO-220AB
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    Rochester Electronics MGP11N60ED 178 1
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    Vyrian MGP11N60ED 4,106
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    GP11N60E Datasheets Context Search

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    Contextual Info: MOTOROLA O rder this docum ent by M GP11N60E/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet M GP11N60E In sulate d G ate Bipolar T ransistor N-Channel Enhancement-Mode Silicon Gate T his Insulated G ate B ip olar T ra n sisto r IG BT uses an advanced


    OCR Scan     		GP11N60E/D PDF

    Contextual Info: MOTOROLA Order this document by MGP11 N60ED/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet M G P 1 1 N 6 0 ED Insulated G ate Bipolar Transistor w ith A n ti-P arallel Diode N-Channel Enhancement-Mode Silicon Gate IGBT & DIODE IN T 0-2 20 11 A @ 90°C


    OCR Scan     		MGP11 N60ED/D MGP11N60ED/D PDF

    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet GP11N60ED Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel Enhancement-Mode Silicon Gate IGBT & DIODE IN T0-220 11 A @ 90°C 15 A @ 25°C 600 VOLTS SHORT CIRCUIT RATED LOW ON-VOLTAGE


    OCR Scan     		MGP11N60ED PDF