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    1N60E Price and Stock

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    onsemi FCH041N60E

    Power MOSFET, N-Channel, SUPERFET? II, Easy Drive, 600 V, 77 A, 41 mO, TO-247 - Rail/Tube (Alt: FCH041N60E)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas FCH041N60E Tube 58 Weeks 450
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    • 1000 $7.77
    • 10000 $7.59
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    Newark FCH041N60E Bulk 30
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    • 100 $11.31
    • 1000 $10.65
    • 10000 $10.42
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    TME FCH041N60E 1
    • 1 $13.26
    • 10 $9.77
    • 100 $9.31
    • 1000 $9.31
    • 10000 $9.31
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    Richardson RFPD FCH041N60E 450
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    Avnet Asia FCH041N60E 58 Weeks 450
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    Avnet Silica FCH041N60E 53 Weeks 30
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    EBV Elektronik FCH041N60E 53 Weeks 30
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    Flip Electronics FCH041N60E 2,250
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    Master Electronics FCH041N60E
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    • 1000 $8.00
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    Vishay Intertechnologies SIHG21N60EF-GE3

    N-CHANNEL 600V - Bulk (Alt: SIHG21N60EF-GE3)
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    Avnet Americas SIHG21N60EF-GE3 Bulk 35 Weeks 500
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    • 1000 $2.35
    • 10000 $2.31
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    TTI SIHG21N60EF-GE3 Tube 500
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    • 1000 $2.41
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    TME SIHG21N60EF-GE3 1
    • 1 $5.17
    • 10 $4.65
    • 100 $3.70
    • 1000 $3.44
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    EBV Elektronik SIHG21N60EF-GE3 42 Weeks 25
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    Vishay Intertechnologies SIHH21N60E-T1-GE3

    N-CHANNEL 600V - Tape and Reel (Alt: SIHH21N60E-T1-GE3)
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    Avnet Americas SIHH21N60E-T1-GE3 Tape & Reel 31 Weeks 3,000
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    Bristol Electronics SIHH21N60E-T1-GE3 880 1
    • 1 $3.31
    • 10 $2.15
    • 100 $1.55
    • 1000 $1.42
    • 10000 $1.42
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    TME SIHH21N60E-T1-GE3 1
    • 1 $5.19
    • 10 $3.57
    • 100 $2.93
    • 1000 $2.93
    • 10000 $2.93
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    Component Electronics, Inc SIHH21N60E-T1-GE3 6
    • 1 $4.62
    • 10 $4.62
    • 100 $3.46
    • 1000 $3.00
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    EBV Elektronik SIHH21N60E-T1-GE3 39 Weeks 3,000
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    Vishay Intertechnologies SIHA21N60EF-GE3

    - Tape and Reel (Alt: SIHA21N60EF-GE3)
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    Avnet Americas SIHA21N60EF-GE3 Tape & Reel 35 Weeks 1,000
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    • 1000 $1.80
    • 10000 $1.74
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    Newark SIHA21N60EF-GE3 Bulk 1
    • 1 $4.94
    • 10 $3.28
    • 100 $2.34
    • 1000 $2.22
    • 10000 $2.22
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    TTI SIHA21N60EF-GE3 Reel 1,000
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    • 1000 $2.21
    • 10000 $2.21
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    Vishay Intertechnologies SIHP21N60EF-BE3

    N-CHANNEL 600V - Tape and Reel (Alt: SIHP21N60EF-BE3)
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    Avnet Americas SIHP21N60EF-BE3 Tape & Reel 40 Weeks 1,000
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    • 1000 $1.50
    • 10000 $1.34
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    Newark SIHP21N60EF-BE3 Bulk 1,000
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    • 1000 $1.53
    • 10000 $1.41
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    TTI SIHP21N60EF-BE3 Tube 10,000 100
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    • 100 $1.92
    • 1000 $1.53
    • 10000 $1.51
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    EBV Elektronik SIHP21N60EF-BE3 51 Weeks 50
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    Find more 1N60E price and stock on Findchips.com

    1N60E Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    1N60E

    Abstract: N60E MGP11N60E
    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL Order this document by MGPll N60m DATA DesignerSTM Data Sheet MGPI 1N60E insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced termination scheme to provide an enhanced and reliable high


    Original     		1n60emgp11n60e30h7g2140wi-2447+2mgp11n60udn60e PDF

    1n60e

    Abstract: UNDERVOLTAGE SENSING CIRCUIT tsop5 NCP1225 1N4007 MUR1100 CS 1N60 tiny smps
    Contextual Info: NCP1225 Product Preview Low Standby Power SMPS Controller NCP1225 is a low standby power Switch−Mode Power Supply, SMPS controller IC specially designed for low power AC−DC adapter applications. The device operates in Discontinuous Conduction Mode DCM with Pulse Frequency Modulation (PFM)


    Original     		ncp1225ncp1225/d1n60eundervoltage sensing circuit tsop5+41n4007mur1100cs 1n60tiny smps PDF

    2N60E

    Abstract: MTA2N60E 1N60E MTA1N60E MTA1N60 1B5 zener diode
    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet 1N60E Fully Isolated TMOS E-FET™ Pow er Field E ffect Transistor Motorola Prcforrvd Devio« N-Channel Enhancement-Mode Silicon Gate Isolated TO-22Q TMOS POWER FET 1.0 AMPERE 600 VOLTS RDS on - 8-0 OHM


    OCR Scan     		o-22qhead4-40an1040b3b7254+62n60emta2n60e1n60emta1n60emta1n601b5 zener diode PDF

    1n60e

    Abstract: MTD1N60E
    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet 1N60E TMOS E-FET ™ Power Field Effect Transistor DPAK for Surface Mount M otorola Preferred Device TMOS POWER FET 1.0 AMPERE 600 VOLTS RDS on = 8.0 OHM N-Channel Enhancement-Mode Silicon Gate


    OCR Scan     		0e-050e-040e-03oe-02+30e-011n60emtd1n60e PDF