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Contextual Info: SIEMENS BCR 108W NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R]=2.2kD, R2=47kfl Pin Configuration BCR 108W WHs Q62702-C2275 1= B Package o Ordering Code II CO Marking LU II
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47kflq62702-c2275ot-323fl235bg5+20e35b050120bfi3
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Q62702C2253
Abstract: transistor bI 240 108 Marking Q62702-C2253
Contextual Info: SIEMENS BCR 108 NPN Silicon Digital Transistor 1Switching circuit, inverter, interface circuit, driver circuit •Built in bias resistor R1=2.2ki2, R2=47kii Pin Configuration BCR 108 WHs 1= B Q62702-C2253 Package O II CO Marking Ordering Code LU II CVJ Type
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47kiiq62702-c2253ot-23q62702c2253+2transistor bi 240108 marking
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108w
Abstract: Q62702-C2275
Contextual Info: SIEMENS BCR 108W NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit •Built in bias resistor R1=2.2kiî, R2=47ki2 Type Marking Ordering Code Pin Configuration BCR 108W WHs 1= B Q62702-C2275 Package 2=E 3=C
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47ki2q62702-c2275ot-323300ns+1108w
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Contextual Info: SIEMENS BCR 108 NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=2.2kQ, R2=47k£2 Type Marking Ordering Code Pin Configuration BCR 108 WHs 1= B Q62702-C2253 Package 2=E 3=C SOT-23
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q62702-c2253ot-230120b7fl235b05 |
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C2275
Abstract: Q62702-C2275 108w
Contextual Info: BCR 108W NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=2.2kΩ, R2=47kΩ Type Marking Ordering Code Pin Configuration BCR 108W WHs 1=B Q62702-C2275 Package 2=E 3=C SOT-323
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q62702-c2275ot-323nov-26-1996c2275+1108w
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Q62702-C2414
Contextual Info: BCR 108S NPN Silicon Digital Transistor Array • Switching circuit, inverter, interface circuit, driver circuit • Two galvanic internal isolated Transistors in on package • Built in bias resistor (R1=2.2kΩ, R2=47kΩ) Type Marking Ordering Code Pin Configuration
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q62702-c2414ot-363nov-26-1996 |
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c2253
Abstract: Q62702-C2253
Contextual Info: BCR 108 NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=2.2kΩ, R2=47kΩ Type Marking Ordering Code Pin Configuration BCR 108 WHs 1=B Q62702-C2253 Package 2=E 3=C SOT-23 Maximum Ratings
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q62702-c2253ot-23nov-26-1996c2253 |
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Sot-363 whs
Abstract: marking code WHs
Contextual Info: SIEMENS BCR108S NPN Silicon D igital Transistor Array • Switching circuit, inverter, interface circuit, 4 5_ _ driver circuit • Two galvanic internal isolated Transistors in on package » Built in bias resistor (R1=2.2kß, R2=47k£i) 3 2 1 BCR108S WHs
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bcr108svps05604q62702-c2414ot-363+2sot-363 whsmarking code whs
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marking WHs
Contextual Info: BCR108. NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 =2.2 kΩ, R2 =47 kΩ • BCR108S: Two internally isolated transistors with good matching in one multichip package
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bcr108bcr108sbcr108weha07184+2eha07174marking whs
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Contextual Info: BCR108. NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 =2.2 kΩ, R2 =47 kΩ • BCR108S: Two internally isolated transistors with good matching in one multichip package
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bcr108bcr108sbcr108weha07184+1eha07174
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BCR108
Abstract: BCR108F BCR108S BCR108W BCW66 bcr1
Contextual Info: BCR108. NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=2.2 kΩ, R2=47 kΩ • BCR108S: Two internally isolated transistors with good matching in one multichip package • BCR108S: For orientation in reel see
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bcr108bcr108sbcr108/fbcr108t/w+6eha07184eha07174bcr108fbcr108wbcw66bcr1
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Contextual Info: BCR108. NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=2.2 kΩ, R2=47 kΩ • BCR108S: Two internally isolated transistors with good matching in one multichip package • BCR108S: For orientation in reel see
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bcr108bcr108sbcr108/fbcr108t/w+3eha07184eha07174bcr108f
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marking WHS sot23
Abstract: transistor marking code whs
Contextual Info: BCR108. NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=2.2 kΩ, R2=47 kΩ • BCR108S: Two internally isolated transistors with good matching in one multichip package BCR108/F/L3
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bcr108bcr108sbcr108/f/l3bcr108t/w+6eha07184eha07174bcr108fbcr108l3marking whs sot23transistor marking code whs
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BCR108
Abstract: BCR108F BCR108L3 BCR108S BCR108T BCR108W
Contextual Info: BCR108. NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 =2.2 kΩ, R2=47 kΩ • BCR108S: Two internally isolated transistors with good matching in one multichip package • BCR108S: For orientation in reel see
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01903
Abstract: diode cc 3053 sd 431 transistor JANTXV 2N2880 equivalent 2n3749 2N2880 MIL-PRF19500 Stancor sd 1074 transistor
Contextual Info: The documentation and process conversion measures necessary to comply with this revision shall be completed by 30 September 1999. INCH-POUND MIL-PRF-19500/315F 30 June 1999 SUPERSEDING MIL-S-19500/315E 10 March 1992 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER
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mil-prf-19500/315fmil-s-19500/315e2n28802n3749+8mil-prf-1950001903diode cc 3053sd 431 transistorjantxv 2n2880 equivalentmil-prf19500stancorsd 1074 transistor
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MC 3041 opto
Abstract: 4N47A 548D 4N48U JANTXV 4N49 JANTXJANTXV 4N49U JANTX JANTXV 3041 OPTO 4N49 opto 4N47U JANTX federal isolator
Contextual Info: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 8 September 2001. MIL-PRF-19500/548D 8 June 2001 SUPERSEDING MIL-PRF-19500/548C 10 October 1997 PERFORMANCE SPECIFICATION COUPLER, OPTO ELECTRONIC, SEMICONDUCTOR DEVICE, SOLID STATE
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mil-prf-19500/548dmil-prf-19500/548c4n47a4n48a+134n49a4n47u4n48u4n49umc 3041 opto548d4n48u jantxv4n49 jantxjantxv4n49u jantx jantxv3041 opto4n49 opto4n47u jantxfederal isolator
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2N335
Abstract: 2N335 JAN 2n333 2N336 2n336a 2N333A 2N335A 2N336LT2 transistor marking T2 2N336 JAN
Contextual Info: MIL-S-19500/37E 16 September 2001 SUPERSEDING MIL-S-19500/37D 22 November 1971 The documentation and process conversion measures necessary to comply with this document shall be completed by 16 December, 2001. MILITARY SPECIFICATION * SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, LOW-POWER TYPES 2N333, 2N335, 2N336,
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mil-s-19500/37emil-s-19500/37d2n3332n335+102n3362n333a2n335a2n336a2n333t22n335t22n335 jan2n336lt2transistor marking t22n336 jan
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PT 2102 ic
Abstract: MIL-PRF-19500 TRANSISTOR SUBSTITUTION DATA BOOK 2N3847 LM 3041 2N3846
Contextual Info: This documentation process conversion measures necessary to comply with this revision shall be completed by 27 September 1999. INCH-POUND MIL-PRF-19500/412B USAF 27 July 1999 SUPERSEDING MIL-S-19500/412A(USAF) 19 June 1990 PERFORMANCE SPECIFICATION SHEET
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mil-prf-19500/412bmil-s-19500/412a2n38462n3847+4pt 2102 icmil-prf-19500transistor substitution data booklm 3041
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2N3442
Abstract: MIL-PRF19500 JANTX 2222 2N3442 JAN transistor d 331 data
Contextual Info: The documentation and process conversion measures necessary to comply with this revision shall be completed by 05 November 1999. INCH-POUND MIL-PRF-19500/370D 05 August 1999 SUPERSEDING MIL-S-19500/370C 25 September 1994 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, HIGH-POWER
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JANKCAR2N7389
Abstract: 2N7426 IRHC7360SE JANKCAF2N7389 IRHC9Y130 JANKCAR2N7268 2n7391 2n7425 JANKCAR2N7261 2n7389
Contextual Info: INCH-POUND MIL-PRF-19500/657A 22 February 2000 SUPERSEDING MIL-PRF-19500/657 23 December 1997 PERFORMANCE SPECIFICATION SEMICONDUCTOR DEVICE, FIELD EFFECT, RADIATION HARDENED, TRANSISTOR DIE, N and P-CHANNEL, SILICON VARIOUS TYPES JANHC, AND JANKC This specification is approved for use by all Departments
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mil-prf-19500/657amil-prf-19500/657mil-prf-19500jankcar2n7389+92n7426irhc7360sejankcaf2n7389irhc9y130jankcar2n72682n73912n7425jankcar2n72612n7389
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equivalent transistor 2N1711
Abstract: 2N1711 2N1890 equivalent 2N1711S 2N1890 2N1890S transistor 2N1711 E11051 transistor TL 431 g
Contextual Info: The documentation and process conversion measures necessary to comply with this revision shall be completed by 25 September 1999. INCH-POUND MIL-PRF-19500/225F 25 June 1999 SUPERSEDING MIL-S-19500/225E 15 April 1994 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON,
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mil-prf-19500/225fmil-s-19500/225e2n17112n1711s+82n18902n1890smil-prf-19500equivalent transistor 2n17112n1890 equivalenttransistor 2n1711e11051transistor tl 431 g
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2N6603
Abstract: 2n6603 transistor 2N6603 JANTX marking code GNF 2n6604 jantxv 2N6604 2n6603 jan
Contextual Info: The documentation and process conversion measures necessary to comply with this revision shall be completed by 30 October 1999. INCH-POUND MIL-PRF-19500/522A 30 July 1999 SUPERSEDING MIL-S-19500/522 EL 21 August 1976 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, HIGH-FREQUENCY
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mil-prf-19500/522amil-s-19500/5222n66032n6604+6mil-prf-195002n6603 transistor2n6603 jantxmarking code gnf2n6604 jantxv2n6603 jan
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diode cc 3053
Abstract: cc 3053 sd 431 transistor 2n3996 equivalent transistor tms 374c 2N3996 2N3997 2N3998 2N3999 MIL-PRF19500
Contextual Info: This is an advance copy of the dated document. The final document after review by the Defense Automated Printing Service may be slightly different in format. Actual technical content will be the same. The documentation and process conversion measures necessary to comply with this
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mil-prf-19500/374dmil-s-19500/374c2n39962n3999+8diode cc 3053cc 3053sd 431 transistor2n3996 equivalent transistortms 374c2n39972n3998mil-prf19500
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2N3743
Abstract: 2N4930 2N4931 397G
Contextual Info: INCH-POUND MIL-PRF-19500/397G 1 April 2002 SUPERSEDING MIL-PRF-19500/397F 21 April 2000 The documentation and process conversion measures necessary to comply with this revision shall be completed by 1 July 2002. PERFORMANCE SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON
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