TRANSISTOR MARKING CODE 2T Search Results

Contextual Info: SIEMENS BCP 51M . BCP53M PNP Silicon AF Transistor • For AF driver and output stages • High collector current • Low collector-emitter saturation voltage • Complementary types: BCP 54M.BCP 56M NPN Type Marking Ordering Code Pin Configuration BCP 51M

Contextual Info: S IE M E N S BCR 133S NPN Silicon Digital Transistor Array »Switching circuit, inverter, interface circuit, driver circuit >Two galvanic internal isolated Transistors in one package >Built in bias resistors (R-|=10kA, R2=10kfl) Type BCR 133S Marking Ordering Code Pin Configuration

Contextual Info: SIEMENS BCR 512 NPN Silicon Digital Transistor >Switching circuit, inverter, interface circuit, drive circuit >Built in bias resistor R-|=4.7kfl, R2=4.7kfl 13 ET Type Marking Ordering Code Pin Configuration BCR 512 XFs Q62702-C2445 1= B Package 2=E 3=C SOT-23

Contextual Info: SIEMENS NPN Silicon Darlington Transistor BC 517 • High current gain • High collector current • Complementary type: BC 516 PNP Type Marking Ordering Code P inC onfigur ation 1 2 3 Package1) BC 517 - Q62702-C825 C TO-92 B E Maximum Ratings Parameter

131 Transistor

Abstract: TRANSISTOR 2SC 2SC4649 2SC2059K 2SC4099 SC-75 T106 T146 transistor 3bt marking 1F SMT3
Contextual Info: 2SC2059K 2SC4099 2SC4649 Transistor, NPN Features • available In SMT3 SMT, SC-59 , UMT3 (UMT, SC-70), and EMT3 (EMT, SC-75) packages • package marking: 2SC2059K, 2SC4099,2SC4649; J-*, where ★ is hFE code • high transition frequency, typically fT = 500 MHz at 1 mA

transistor K 1377

Abstract: 1377 transistor "Programmable Unijunction Transistor" programmable unijunction transistor BRY61 BRY61 EQUIVALENT "Programmable Unijunction Transistor" 70v Philips MARKING CODE a5p 33131 unijunction transistor
Contextual Info: • bbS3T31 N AMER 00SSM3Û 0 2T « A P X PHILIPS/DISCRETE b 7E BRY61 D PROGRAMMABLE UNIJUNCTION TRANSISTOR Planar p-n-p-n trigger device in a m icrom iniature plastic envelope intended fo r applications in th ick and th in -film circuits. It is intended fo r use in switching applications such as m otor control, oscillators,

c125t

Abstract: Ho3 501 transistor dtc323tu 94S-751-C343T transistor PNP A124G transistor KD 503 DTC343 kd 2902 kd 503 transistor DTC143TK
Contextual Info: Transistors Digital transistors built-in resistors DTA114TE/DTA114TUA/DTA114TKA/DTA114TSA @Features 1) Built-in bias resistors enable the @External dimensions (Units: mm) DTAll4TE configuration of an inverter circuit without connecting external input resistors (see the equivalent cir-

Contextual Info: MMBT4403 PNP General Purpose Transistor FEATURES • Ideal for Medium Power Amplification and Switching • Complementary NPN Type Available MMBT4401 MECHANICAL DATA • Case: SOT-23 Plastic • Case material: “Green” molding compound, UL flammability classification 94V-0, (No Br. Sb. CI)

Contextual Info: MMST4403 PNP General Purpose Transistor FEATURES • Ideal for Medium Power Amplification and Switching • Complementary NPN Type available MMST4401 MECHANICAL DATA • Case: SOT-323 Plastic • Case material: “Green” molding compound, UL flammability classification 94V-0, (No Br. Sb. CI)

transistor MARKING CODE 2T

Contextual Info: MMDT4403 PNP/PNP Multi-Chip Transistor FEATURES • Ideal for low power amplification and switching MECHANICAL DATA • Case: SOT-363 Plastic • Case material: “Green” molding compound, UL flammability classification 94V-0, No Br. Sb. CI • Lead Free in RoHS 2002/95/EC Compliant

transistor s9012

Abstract: S9012 2T1 SOT-23 s9012 2T1 SOT-23 S9012 equivalent 2t1 transistor S9012 SOT-23 S9012 data sheet transistor SOT23 2t1 Transistor S9013
Contextual Info: BL Galaxy Electrical Production specification PNP Silicon Epitaxial Planar Transistor FEATURES z High Collector Current. IC= -500mA） z Complementary To S9013. z Excellent HFE Linearity. S9012 Pb Lead-free APPLICATIONS z High Collector Current. SOT-23 ORDERING INFORMATION

Pnp transistor smd ba rn

Abstract: transistor marking code 12W SOT-23 smd transistor marking p69 TRANSISTOR SMD MARKING CODE s2a transistor smd bc rn TRANSISTOR SMD MARKING CODE bc ru 1ff TRANSISTOR SMD MARKING CODE smd transistor P2D Motorola transistor smd marking codes SMD TRANSISTOR MARKING P28
Contextual Info: ont«* fj= !IS iìC O Ii ú U C i o y G o ï p . TH t N t x ï G é n é r a t i o n o í s m d M D 9 D A T 9 9 and ap iablished jality system f A . the Resign and Manufactu ~ d iscrete ^SeTOiCbiSuct audit as been fu rnlis ishh^ALth th a t tj tJ j A » q u ire le n ts according tj

Contextual Info: Philips Semiconductors Product specification PNP switching transistor PMST4403 FEATURES PINNING • High current max. 600 mA PIN • Low voltage (max. 40 V). APPLICATIONS • DESCRIPTION 1 base 2 emitter 3 collector Switching and linear amplification. 3

TRANSISTOR MARKING NK

Abstract: BCR108T BFR949T SC75 SC79 SCD80 BFR94
Contextual Info: BFR949T NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA 2 3 • fT = 9 GHz, F = 1 dB at 1 GHz 1 • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 ESD (Electrostatic discharge) sensitive device, observe handling precaution!

Infineon Technologies transistor 4 ghz

Abstract: BFR193L3 infineon marking code L2 1B marking transistor INFINEON transistor marking C5 MARKING TRANSISTOR
Contextual Info: BFR193L3 NPN Silicon RF Transistor* • For low noise, high-gain amplifiers up to 2 GHz • For linear broadband amplifiers 3 • fT = 8 GHz, F = 1 dB at 900 MHz 1 2 • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 * Short term description

Infineon Technologies transistor 4 ghz

Abstract: BFR193L3 BFR340L3 BFR34* transistor marking FA
Contextual Info: BFR340L3 NPN Silicon RF Transistor* • Low voltage/ Low current operation • Transition frequency of 14 GHz 3 • High insertion gain 1 2 • Ideal for low current amplifiers and oscillators • Pb-free RoHS compliant package 1) • Qualified according AEC Q101

C5 MARKING TRANSISTOR

Abstract: infineon marking code L1 Infineon Technologies transistor 4 ghz BFR193L3 BFR380L3 INFINEON transistor marking MARKING CODE 21E infineon marking code L2
Contextual Info: BFR380L3 NPN Silicon RF Transistor* • High current capability and low figure for wide dynamic range application 3 • Low voltage operation 1 2 • Ideal for low phase noise oscillators up to 3.5 GHz • Low noise figure: 1.1 dB at 1.8 GHz • Pb-free RoHS compliant package 1)

2T transistor surface mount

Abstract: transistor MARKING CODE 2T transistor marking code 2.T marking code 2T 2T marking J-STD-020A MMBT4401T MMBT4403T 2t sot IC DATE code
Contextual Info: MMBT4403T PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR NEW PRODUCT Features • · · Epitaxial Planar Die Construction Complementary NPN Type Available MMBT4401T Ultra-Small Surface Mount Package SOT-523 Mechanical Data · · · · · · · · Dim Min Max Typ

Transistor S8550 2TY

Abstract: sot-23 Marking 2TY Transistor 2TY transistor s8550 S8550 equivalent S8550 SOT-23 2ty BR S8550 S8550 SOT-23 2ty transistor
Contextual Info: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor FEATURES z High Collector Current. IC= -500mA） z Complementary To S8050. z Excellent HFE Linearity. S8550 Pb Lead-free APPLICATIONS z High Collector Current. SOT-23 ORDERING INFORMATION

Transistor Equivalent list

Abstract: FMBT3904W 1N916 8 open colector output oc 140 npn transistor
Contextual Info: Formosa MS NPN Epitaxial Planar Transistor FMBT3904W List List. 1 Package outline. 2

panasonic inverter manual

Abstract: object counter circuit Infrared object counter circuit panasonic frequency inverter manual reflective sensor ir modulated 1" color sensing sensor Panasonic transistor marking code KASUGA
Contextual Info: 5.5mm RX-LS200 -P M4 (length 16mm) screw with washers >Never use this product as a sensing device for personnel protection. I In case of using sensing devices for personnel protection, use products which meet laws and standards, such as OSHA, ANSI or IEC etc., for personnel protec­

3BS transistor

Contextual Info: BCR 400 Preliminary Data Active Bias Controller Characteristics • Supplies stable bias current even at low battery voltage and extreme ambient temperature variation • Low voltage drop of 0.7V Application notes • Stabilizing bias current of NPN transistors and FET's from

sot 23 marking code 2t

Abstract: MMBT4403 2t sot23 NPN medium power transistor in a SOT package MMBT4401 transistor MARKING CODE 2T 2t sot mmbt4403 2t sot-23
Contextual Info: BL Galaxy Electrical Production specification PNP General Purpose Transistor FEATURES z Epitaxial planar die construction. z Complementary NPN type available MMBT4403 Pb Lead-free MMBT4401 . z Also available in lead free version. z Ideal for medium power amplification and switching.

JD 1803

Abstract: 2SA1870 100V 2A MPT3 2SA1900 2SC5053 marking code pj vat package marking code TRANSISTOR 2SA1870
Contextual Info: 2SA1870 Transistor, PNP Features Dimensions U n its : mm • available in PSD package • low collector saturation voltage, typicallyVCE(sat) = -0.2 V a t lc/lB = -6A /-0.3A • high switching speed, typically tf = 0.17 (AS for lc = -6 A • wide safe operating area (SOA)