6E35BOS Search Results

SFH400

Contextual Info: bOE D • 6E35bOS D D H b b n Dbl « S I E G SIEMENS SIEMENS ~{3 SFH480 SFH481 SFH482 AKTIENGESELLSCHAF GaAIAs INFRARED EMITTER Package Dimensions in Inches (mm SFH480 291 (7.4) 259(66) 571 114.5) 492(12 5) ¥ 0100 (2 54) 169(4 8) 181(4 6) 208(53) 197 (5)

siemens sab 82532

Abstract: 82258 SA 82532 SAB 80286 csc 2323 sab80286 STT 3 SIEMENS 80286 microprocessor pin out diagram ESCC2 siemens sab 82525
Contextual Info: SIEM ENS Enhanced Serial Communication Controller ESCC2 SAB 82532 Preliminary Data 1.1 CMOS 1C General Features S erial Interface • Two independent full duplex serial channels - On chip clock generation or external clock source - On chip DPLL for clock recovery of each

Contextual Info: SIEMENS BUZ 382 SIPMOS Power Transistor • N channel • Enhancement mode V'IOys6 • FREDFET 3 Pin 1 Pin 2 Type BUZ 382 Vbs 400 V b 12.5 A flbSfon 0.4 w Pin 3 D G S Package Ordering Code TO-218AA C67078-A3207-A2 Maximum Ratings Parameter Symbol Drain source voltage

BA282

Abstract: marking SA FHA07001 BA diode BA 282 diode ba 147
Contextual Info: SIEMENS BA 282 BA 283 Silicon RF Switching Diodes • For low-loss VHF band switching in TV tuners • Not for new design Type Marking Ordering Code Pin Configuration Package1 BA 282 yellow Q62702-A428 DO-35 DHD Q62702-A429 BA 283 ¿ - K] o FHA07001 Maximum Ratings

KBP 2060

Abstract: ugse2 Siemens PEB 2040 T7G "direct replacement" ic marking code 2041 G0522 siemens RS 2041 j
Contextual Info: t SIEMENS AKTIENGESELLSCHAF bSE D • ÖS3SbDS 00 52 1 7 4 7fl=î * S I E 6 SIEMENS ICs for Communications PEB 2041 Memory Time Switch Replacement MTSR Rev. 1.0 Technical Manual 12.91 SIEMENS AKTIENGESELLSCHAF bSE j> m fi2 3SbDS Q0S2175 b l S « S I E G

Contextual Info: In fin e o n SPD 14N05 |n lp ro v e d « W " ' technologies SIPMOS PowerTransistor Product Sum m ary Features Drain source voltage • N channel • Enhancement mode • Avalanche rated Drain-Source on-state resistance Continuous drain current 55 V f l DS on

BFG235

Contextual Info: SIEMENS BFG 235 NPN Silicon RF Transistor • For low-distortion broadband output amplifier stages in antenna and telecommunications systems up to 2 GHz at collector currents from 120mA t<5 250mA • Power amplifiers for DECT and PCN systems • Integrated emitter ballast resistor

L0324

Contextual Info: SIEMENS 8-Bit CMOS Microcontroller C515A Advance Inform ation • • • • • • • • • • Full upward com patibility w ith SAB 80C515A/83C515A-5 Up to 24 MHz external operating frequency - 500 ns instruction cycle at 24 MHz operation 32K byte on-chip ROM with optional ROM protection

Contextual Info: û235bQ5 DOTÖTIÖ 553 SIEMENS 16 K bit 2048 x 8 bit Serial C M O S EE P R O M s, I 2C S yn chro n o us 2-W ire Bus S L x 24C 164 Preliminary Features • Data EEPROM internally organized as 2048 bytes and 128 pages x 16 bytes • Low power CMOS • Vcc = 2.7 to 5.5 V operation

SAB 80C537-16-N

Abstract: siemens 80c515 siemens cpu 313 0235ti 80C537n siemens cpu 314 80C537-16-N
Contextual Info: 47E » • 0235bD5 GDET3ti3 & « S I E G SIEMENS AKTIENGESELLSCHAF High-Performance 8-Bit CMOS Single-Chip Microcontroller SAB 80C517/80C537 Advanced Inform ation SAB 80C517 Microcontroller with factory mask-programmable ROM SAB 80C537 Microcontroller for external ROM

3Tg 21 10 siemens

Abstract: BSM25GB100D 3Tg 21 20 siemens siemens igbt BSM 150 Gb 160 d siemens 3TG 3TG siemens pl0l siemens igbt BSM 300 T-23 siemens igbt BSM 25 Gb 100 d
Contextual Info: bGE D • A23SbOS OGMSöDfl ISO ■ S I E G Sl EM ENS SIEMENS AKTIEN6ESELLSCHAF T - 2 3 ^ 0 7 BSM 25 GB 100 D BSM 25 G AL 100 D IGBT Module Preliminary Data vCE= 1000 v / C = 2 x 35 A at Tc = 25 C / c = 2 x 25 A at Tc = 80 C • Power module • Half-bridge/Chopper

siemens saf 300

Abstract: Siemens SAB-C501 siemens cpu 416 1r40 SAB-501 SAB-C501-L20P C501 CRYSTAL 20 mhZ kss exo 2 80C52
Contextual Info: SIEMENS SAB-C501 8-Bit CMOS Microcontroller • Fully compatible to standard 8051 microcontroller • Versions for 12/20/40 MHz operating frequency • 8 K x 8 ROM SAB-C501 -1R only • 256 x 8 RAM • Four 8-bit ports • Three 16-bit Timers / Counters (Timer 2

Contextual Info: SIEMENS BCP 51M . BCP53M PNP Silicon AF Transistor • For AF driver and output stages • High collector current • Low collector-emitter saturation voltage • Complementary types: BCP 54M.BCP 56M NPN Type Marking Ordering Code Pin Configuration BCP 51M

Contextual Info: SIEMENS GaAs FET CF 739 Features • N-channel dual-gate GaAs MES FET • Depletion mode transistor for tuned small-signal applications up to 2 GHz, e. g. VHF, UHF, Sat-TV tuners • Low noise • High gain • Low input capacitance ESD: Electrostatic discharge sensitive device, observe handling precautions!