S8550 Search Results

Si APD array

Abstract: E4 mark Photodiode Array 32 element
Contextual Info: APD Si APD array S8550 4 x 8 element APD array with low noise and enhanced short-wavelength sensitivity S8550 is an APD avalanche photodiode array designed for short wavelength detection, featuring low noise and low terminal capacitance. S8550 also offers uniform gain and small cross-talk between each element.

s8550

Abstract: s8550 PNP TRANSISTOR S8550 DATASHEET S8550 transistor S8550 TO-92
Contextual Info: TRANSISTOR PNP S8550 TO-92 FEATURES Power dissipation PCM : 0.625 W（Tamb=25℃） Collector current A ICM : - 0.5 Collector-base voltage V(BR)CBO : - 40 V 1. EMITTER 2. BASE 3. COLLECTOR 1 2 3 CHARACTERISTICS（ （Tamb=25℃ ℃ ELECTRICAL Parameter Collector-base

S8550T

Abstract: S8550 hFE-250 D385
Contextual Info: S8550T PNP Silicon General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead free TO-92 4.55 0.2 1.27 Typ. Excellent hFE linearity 1.25 0.2 1 2 3 4.5 z 3.5 0.2 FEATURES 0.2 0.1 14.3 0.2 2.54

transistor TO-92 S8050

Abstract: transistor S8050 S8050 BR S8050 S8050 transistor TO-92 S8050 equivalent S8050 TRANSISTOR NPN FEATURES S8550 S8550 equivalent S8050 TO-92
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors S8050 TO-92 TRANSISTOR NPN FEATURES z Complimentary to S8550 z Collector current: IC=0.5A 1.EMITTER 2.BASE MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter

S8050T

Abstract: D385
Contextual Info: S8050T NPN Silicon General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead free FEATURES 3.5 0.2 1.27 Typ. 1.25 0.2 z Complimentary to S8550T Collector Current: IC = 0.5 A 0.2 0.2 1 2 3

s8550d

Contextual Info: MCC S8550-B S8550-C S8550-D
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components Features • • • • • • • TO-92 Plastic-Encapsulate Transistors Capable of 0.625Watts Tamb=25 OC of Power Dissipation.

transistor s8550

Abstract: BR S8550 s8550 transistor
Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# S8550 Features • • • • • • TO-92 Plastic-Encapsulate Transistors Capable of 0.625Watts Tamb=25 OC of Power Dissipation.

Contextual Info: rev.1.0 17.03.2015 S85500MG Description S85500MG is an infrared laser diode emitting at typically 850 nm with rated output power of 500 mW cw, in a standard 5.6 mm TO package with integrated monitor photodiode and flat window cap. Maximum Ratings T CASE =

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO-92 S8550 TRANSISTOR PNP 1. EMITTER FEATURE Excellent hFE Linearity 2. BASE 3. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit

Contextual Info: FORWARD INTERNATIONAL ELECTRONICS LTD. S8050 SEMICONDUCTOR TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY AMPLIFIER Package: TO-92 * Complement to S8550 * Collector Current :Ic=500mA * High Total Power Dissipation: pC=625mW ABSOLUTE MAXIMUM RATINGS at Tamb=250C

BR S8550

Abstract: s8550 transistors S8550 s8550 to92
Contextual Info: S8550 PNP TO-92 Bipolar Transistors TO-92 1. EMITTER 2. BASE 3. COLLECTOR Features Excellent hFE linearity MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -25

S8550 equivalent

Abstract: S8050 equivalent S8550 UTC transistor s8550 transistor S8050 s8050 transistor datasheet s8550 S8550 DATASHEET transistor TO-92 S8050 S8550 applications
Contextual Info: UTC S8550 PNP EPITAXIAL SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT SMALL SIGNAL PNP TRANSISTOR DESCRIPTION The UTC S8550 is a low voltage high current small signal PNP transistor, designed for Class B push-pull audio amplifier and general purpose applications.

s8550 transistor

Abstract: transistor s8550 S8550 BR S8550 S8550 equivalent S8550 DATASHEET S8550 D s8550transistor S-8550 s8550 c
Contextual Info: S8550 S8550 TRANSISTOR PNP TO-92 FEATURE Power dissipation PCM: 1. EMITTER 0.625 W (Tamb=25℃) 2. BASE Collector current ICM: -0.5 A Collector-base voltage -40 V V(BR)CBO: Operating and storage junction temperature range 3. COLLECTOR 1 2 3 TJ, Tstg: -55℃ to +150℃

transistor S8550

Abstract: s8550 s8550l s8550 PNP TRANSISTOR S8050 applications s8550 transistor S8550 TO92 package S8550 equivalent S8550 UTC transistor TO-92 S8550
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD S8550 PNP SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT SMALL SIGNAL PNP TRANSISTOR „ DESCRIPTION The UTC S8550 is a low voltage high current small signal PNP transistor, designed for Class B push-pull audio amplifier and general purpose applications.

transistors s8550

Abstract: S8550 to-92
Contextual Info: S8550 PNP General Purpose Transistors TO-92 * "G" Lead Pb -Free 1. EMITTER 2. BASE 3. COLLECTOR 1 2 3 ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Symbol VCEO VCBO VEBO IC

sot-23 Marking 2TY

Abstract: Transistor S8550 2TY marking 2TY SOT-23 2Ty
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 S8550 TRANSISTOR PNP 1. BASE FEATURES z Complimentary to S8050 2. EMITTER 3. COLLECTOR Collector current: IC=0.5A z MARKING : 2TY MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

Transistor S8550 2TY

Abstract: t/51511d150/fw/a/transistor s8050
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 S8550 TRANSISTOR PNP 1. BASE FEATURES z Complimentary to S8050 2. EMITTER 3. COLLECTOR Collector current: IC=0.5A z MARKING : 2TY MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

apd array

Abstract: Photodiode Array 32 element S8550 applications S8550S Hamamatsu S8550 APD Array
Contextual Info: APD Si APD array S8550 4 x 8 element APD array with low noise and enhanced short-wavelength sensitivity S8550 is an APD avalanche photodiode array designed for short wavelength detection, featuring low noise and low terminal capacitance. S8550 also offers uniform gain and small cross-talk between each element.

S8550 equivalent

Abstract: S8550 transistor s8550 S8550 DATASHEET BR S8550 transistors S8550 S8550 applications transistor TO-92 S8550 S8550 transistor f-30MHz
Contextual Info: MCC
  omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# S8550 Features • • • • • • TO-92 Plastic-Encapsulate Transistors Capable of 0.625Watts Tamb=25 OC of Power Dissipation. Collector-current 0.5A

Transistor S8550 2TY

Abstract: sot-23 Marking 2TY Transistor 2TY transistor s8550 S8550 equivalent S8550 SOT-23 2ty BR S8550 S8550 SOT-23 2ty transistor
Contextual Info: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor FEATURES z High Collector Current. IC= -500mA） z Complementary To S8050. z Excellent HFE Linearity. S8550 Pb Lead-free APPLICATIONS z High Collector Current. SOT-23 ORDERING INFORMATION

Transistor 2TY

Abstract: Transistor S8550 2TY .2TY sot-23 Marking 2TY .2ty transistor 2ty transistor 2TY marking s8550 sot-23 S8050 2TY S8550 sot 23
Contextual Info: S8550 SOT-23 Transistor PNP SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features — Complimentary to S8050 — Collector current: IC=0.5A MARKING : 2TY Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value

j3y transistor

Abstract: .j3y SOT-23 J3Y .j3y transistor S8050 SOT-23 transistor J3Y J3Y Transistor MARKING SOT-23 J3Y npn J3Y marking MARKING J3Y
Contextual Info: S8050 SOT-23 Transistor NPN SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features — — Complimentary to S8550 Collector Current: IC=0.5A MARKING: J3Y Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value

Contextual Info: TO-92 Plastic-Encapsulate Transistors S8550 TRANSISTOR PNP TO-92 FEATURE Power dissipation PCM: 1. EMITTER 0.625 W (Tamb=25℃) 2. BASE Collector current -0.5 A ICM: Collector-base voltage -40 V V(BR)CBO: Operating and storage junction temperature range

s8050 d h

Abstract: NPN S8550 s8550 npn transistor s8050 s8550 d h S8550 D S8550 equivalent S8050 S8550 S8050 npn
Contextual Info: S8050 NPN EPITAXIAL SILICON TRANSISTOR High Current Application High Collector Curre nt Ic=700mA TO- 92 High Collector P owe r Dissipa tion P c=625mW Comple mentary to S8550 ABS OLUTE MAXIMUM RATINGS Characteristic Ta =25 Symbol Value Unit Collector-Ba s e Volta ge