TRANSISTOR K 3911 Search Results

transistor ld3

Abstract: 2SK703 T500
Contextual Info: N E C ELECTRONICS INC Tfl DE | t,4E7525 OQlñññM T |~884 D T - 3 ?• : '¡ ^ 7 N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR 2SK703 D E S C R IP T IO N The 2 S K 7 0 3 is N-Channel M O S Field Effect Power Transistor P A C K A G E D IM E N S IO N S designed for solenoid, m otor and lamp driver.

BUK426-1000A

Abstract: BUK426-1000B BUK426-100
Contextual Info: 7Z39-// Philips Components Data sheet status Product specification date of issue M arch 1991 B U K 426 - 1OO OA/B PowerMOS transistor PHILIPS INTERNATIONAL SkE D • 711082b 004M135 SSI H P H I N GENERAL DESCRIPTION

Contextual Info: N AMER P H I L I PS/DISCRETE bbS3131 00E0S7Q fi E5E D BUK427-450B PowerMOS transistor r - 3<3-ii G E N E R A L D E S C R IP T IO N Q U IC K R E F E R E N C E D A TA N-channel enhancement mode field-effect power transistor in a plastic full pack envelope. The device is intended for use in

MPA92

Abstract: 68W* transistor 68w transistor SOT123 Package BLF245 BH RV transistor International Power Sources P101 sot123 GZ22
Contextual Info: Product specification Philips Semiconductora VHF power MOS transistor PHILIPS INTERNATIONAL T 5bE D • - 3 1-11 * BLF245 711GflSb 0043301 3flfl BIPHIN PIN CONFIGURATION FEATURES • High power gain • Low noise figure • Easy power control • Good thermal stability

Contextual Info: N AflER PHILIPS/DISCRETE ObE D PowerMOS transistor • bbSB^l 0014535 T ■ “ BUZ78 May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies

Contextual Info: BUZ74A PowerMOS transistor N AMER PHILIPS/DISCRETE ObE D • bfc.53131 0014514 5 ■ May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies

blf544b

Abstract: 015 capacitor philips 74649 BH RV transistor PHILIP RESISTOR 2322
Contextual Info: Philip« Sem iconductors Product »pacification UHF push-pull power MOS transistor PHILIPS T - 3^ - /I INTERNATIONAL SbE T> • BLF544B 71100Bb OOMBTflS 177 B I P H I N PIN CONFIGURATION FEATURES • High power gain • Easy power control • Good thermal stability

transistor ZA 16

Abstract: BUZ11 IEC134 T0220AB
Contextual Info: N AMER P H I L I P S / D I S C R E T E QbE d PowerMOS transistor • b 353^31 D o m 3 aa 1 " BUZ11 r - 3 ^ 1! May 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies

BUZ83A

Contextual Info: N AMER PHILIPS/DISCRETE OLE D • PowerMOS transistor hbS3T31 DOlMbfii 4 ■ BUZ83A T - n - i i July 1987 QUICK REFERENCE DATA GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a metal envelope. This device is intended for use in

BUZ90A

Contextual Info: _!_PowerMQS transistor_ BUZ90A^ N AMER PHILIPS/DISCRETE QbE D • ^53*131 0014556 2 ■ r - 3 9 - i/ May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. The device is intended for use in

BUZ50C

Abstract: T0220AB
Contextual Info: PowerMQS transistor N AUER PHILIPS/DISCRETE BUZ50C OLE D • [^53^31 0014570 1 ■ " T -3 1 -1 1 May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies

BUZ73

Abstract: K 3911 transistor "" transistor T0220AB
Contextual Info: N AMER PHILIPS/DISCRETE OL.E D • L,Li53cì31 0 0 1 4 4 5 0 FowerMUS transistor " 7 ■ BUZ73 T~ 37- j May 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies

ld1127

Abstract: transistor 45 f 123 BUZ72A T0220AB
Contextual Info: N AMER PHILIPS/DISCRETE ObE J> PowerMOS transistor • LbSBTBl 001443? " B U Z 7 2 A T " T - 3 1 - May 1987 G ENERAL DESCRIPTION N-channel enhancem ent m ode field-effect pow er transistor in a plastic envelope. T he device is intended for use in Sw itched Mode Power Supplies

BUZ10

Contextual Info: N AUER PHILIPS/DISCRETE OLE D • PowerMOS transistor bb53T31 0014331 1 ■ BUZ10 r~ 1 May 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies

Contextual Info: N AMER PHILIPS/DISCRETE ObE D • bbS3T31 DD144D2 5 ■ PowerM OS transistor BU Z71 |j May 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies

BUZ78

Abstract: T0-220AB transistor a7j T0220AB transistor 800V 1A
Contextual Info: N AMER PHILIPS/DISCRETE PowerMOS transistor □LE • d “ GomsBs B U Z 78 ■ t ” T - 3 1 -1 1 May 1987 g e n e r a l d e s c r ip t io n N-channel enchancement mode field-effect power transistor in a plastic envelope. The device is intended for use in

K 3911

Abstract: transistor k 3911 transistor 86 y 87 BUZ11A T0220AB PAD35
Contextual Info: PowerMOS transistor_ N AMER PHILIPS/DISCRETE GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , m otor control, welding, DC/DC and DC/AC converters,

Transistor Bo 17

Abstract: BUK426-50A BUK426-60A BUK426-60B PINNING-SOT199
Contextual Info: PHILI PS INTERNATIONAL 5L.E T> 711DÖ2b D D M m i 5 IPHIN Philips Components D ata sheet status Product specification d ate o f issue March 1991 BUK426-60A/B 7^39-t/ PowerMOS transistor Replaces BUK426-50A/B GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a

BUZ21

Contextual Info: _ ObE D N AMER PHILIPS/DISCRETE • PowerMOS transistor bbS 3 T 31 0 0 1 4 4 3 3 T ■ BUZ21 t -SI-W May 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in

BUK451-100A

Abstract: K451 BUK451-100B T0220AB transistor 513
Contextual Info: -7^ Philips Com ponents Data sheet status Prelim inary specification date of issue March 1991 N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,

C4171

Abstract: MCI455 MJ6308 2n6308 TRANSISTOR REPLACEMENT two transistor flyback MJE16106 2N6308 AM503 MJ16006 MTP8P10
Contextual Info: M OTO RO LA SC XSTRS/R F MOTOROLA 1EE D SEM IC O N D U C T O R TECHNICAL DATA I Order this data sheet by MJ6308/D b3b?254 QOflSbSb Designer's Data Sheet S w itc h m o d e N P N Bipolar Pow er Transistor For S w itch in g Pow er Su p p ly A p p lication s

500c t2

Abstract: BUK627-500A BUK627-500B BUK627-500C
Contextual Info: N AMER P H I L I P S / D I S C R E T E SSE D m ^53*131 GD2Gbba PowerMOS transistor Fast Recovery Diode FET BUK627-500A BUK627-500B BUK627-500C GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic envelope.

2222A transistor

Abstract: 300MIL HMS38112 HMS39112 MO-137 MS-001 MS-013
Contextual Info: Dec. 2001 VER. 1.00 4-BIT SINGLE CHIP MICROCOMPUTERS HMS38112/39112 USER`S MANUAL • HMS38112 • HMS39112 VER. 1.00 Published by MCU Application Team in MagnaChip Semiconductor Ltd. Co., Ltd. MagnaChip Semiconductor Ltd. 2004 All Right Reserved. ⓒ Additional information of this manual may be served by MagnaChip Semiconductor Ltd. Offices in

2222A transistor

Abstract: MARKING HYNIX hynix naming IR REMOTE Hynix 300MIL HMS38112 HMS39112 MO-137 MS-001 MS-013
Contextual Info: Dec. 2001 VER. 1.00 4-BIT SINGLE CHIP MICROCOMPUTERS HMS38112/39112 USER`S MANUAL • HMS38112 • HMS39112 4-BIT SINGLE CHIP MICROCOMPUTERS HMS38112/39112 USER`S MANUAL • HMS38112 • HMS39112 VER. 1.00 Published by MCU Application Team in HYNIX Semiconductor Inc. Co., Ltd.