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Contextual Info: • 3 3 -1 3 RZ2731B60W IX PH IL IP S INTERNATIONAL SbE D ■ 711GflSb OD4tiS7ö GAS H P H I N PULSED MICROWAVE POWER TRANSISTOR NPN silicon planar epitaxial microwave power transistor, intended fo r use in a common-base class-C broadband pulse power am plifier w ith a frequency range o f 2.7 to 3.1 GHz.
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MPA92
Abstract: 68W* transistor 68w transistor SOT123 Package BLF245 BH RV transistor International Power Sources P101 sot123 GZ22
Contextual Info: Product specification Philips Semiconductora VHF power MOS transistor PHILIPS INTERNATIONAL T 5bE D • - 3 1-11 * BLF245 711GflSb 0043301 3flfl BIPHIN PIN CONFIGURATION FEATURES • High power gain • Low noise figure • Easy power control • Good thermal stability
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tblf245ot123-sot123711002b+12blf245t-39-117110fl2bmpa9268w* transistor68w transistorsot123 packagebh rv transistorinternational power sourcesp101sot123gz22
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by713
Abstract: Cathode indicated by blue band diode Cathode indicated by blue band BY712 BY714
Contextual Info: SbE 3> BY712 BY713 BY714 711GflSb 0040517 220 • PHIN PHILIPS i n t e r n a t i o n a l I M M I N SbE D T -o z -t* ’ SILICON E.H.T. SOFT-RECOVERY RECTIFIER DIODES* E.H .T. rectifier diodes in glass envelopes intended fo r use in high-voltage applications such as the highvoltage supply of television receivers and monitors. The devices feature non-snap-off characteristics.
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711gflsbby712by713by714+4t-03-ls711qfl2bcathode indicated by blue banddiode cathode indicated by blue band
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BF965
Abstract: B753
Contextual Info: 711GflSb □□b753tì OST IPHIN BF965 SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in plastic X-package w ith source and substrate interconnected, intended fo r VHF applications, such as VHF television tuners and professional com m unication
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philips TIP142
Abstract: darlington TIP142 power amplifier philips TIP147
Contextual Info: TIP140 TIP141 TIP142 PHILIPS INTERNATIONAL SbE P B 711GflSb GD435flb 4ÖT H I P H I N T-33-z *T SILICON DARLINGTON POWER TRANSISTORS N-P-N epitaxial-base transistors in monolithic Darlington circuit fo r audio output stages and general amplifier and switching applications. SOT-93 plastic envelope. P-N-P complements are TIP145, TIP146
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SFE10.52MJA10
Abstract: 8745H
Contextual Info: Philips Semiconductors Preliminary specification Satellite sound receiver with l2C-bus control TDA8745 FEATURES • On-chip frequency synthesizer and mixer: - tuning range 4 to 9.77 M Hz - reference oscillator 4 M H z using a crystal or 4 MHz frequency source
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thy 266
Abstract: m1435 M1443 M2803 BTR59-800R lg philips inverter M3226 IEC134 BTR59 Gate Turn-Off Thyristors
Contextual Info: PHILIPS INTERNATIONAL SflE D m 7110ÔHb 0D5305Ô TOT H P H I N B T R 5 9 S E R IE S FAST GATE TURN-OFF THYRISTORS Thyristors in SOT-93 envelopes which are capable o f being turned both on and o ff via the gate and may be used w ith gate-assisted tu rn -o ff in anode-commutated circuits. They are suitable fo r use in
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B303D
Abstract: TT 2222 npn transistor tt 2222 transistor npn 2xi transistor sot t06 FTC 960 trimmer PT 10 TT 2222 ka band transistor
Contextual Info: b5E » H 71106Eb D0b3DEÛ 07T « P H I N BLV91/SL PHILIPS INTERNATIONAL UHF POWER TRANSISTOR NPN silicon planar epitaxial transistor designed fo r use in mobile radio transm itters in the 900 MHz band. Features: • diffused emitter-ballasting resistors fo r an optim um temperature profile.
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blv91/slot-172d711005bdgb3034+9b303dtt 2222 npntransistor tt 2222transistor npn 2xitransistor sot t06ftc 960trimmer pt 10tt 2222ka band transistor
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SILICON DIFFUSED POWER TRANSISTOR
Abstract: T200I specification of curve tracer bu705 philips semiconductor BU705 700 v power transistor
Contextual Info: Philips Semiconductors Product specification Silicon diffused power transistor BU705 High-voltage, high-speed switching, glass passivated npn power transistor in a SO T93A envelope, intended fo r use in horizontal deflection circuits o f television receivers.
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bu705ot93a7z810711gflefa+677mfibsilicon diffused power transistort200ispecification of curve tracerbu705 philips semiconductor700 v power transistor
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P83C524
Abstract: 80C51 P83C524FBA P83C524FBP P83C524FFA P83C524FFP P83C524FHP
Contextual Info: P H IL IP S I N T E R N A T I O N A L bSE J> □ 7 1 1 D Ö 2 b D D b l 3 4 3 544 H P H I N Philips Preliminary specification 8-bit microcontroller P83C524 CONTENTS 15 INSTRUCTION SET 1 FEATURES
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Contextual Info: TIP110 TIP111 TIP112 PHILIPS INTERNATIONAL SbE D • 711002b 0043550 224 H P H I N T -3 3 -Z SILICON DARLINGTON POWER TRANSISTORS N -P -N epitaxial-base transistors in m o n o lith ic D arlin g to n c irc u it fo r au dio o u tp u t stages and general purpose a m p lifie r and sw itching applications. T 0 -2 2 0 A B plastic envelope. P-N-P co m p lem ents are
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Contextual Info: PHILIPS INTERNATIONAL SflE D • 7110fl2b GGS30Sfl TOT « P H I N _ BTR59 S E R IE S FAST GATE TURN-OFF THYRISTORS T h y risto rs in S O T -9 3 envelopes w hich are capable of being turned both on and o ff via the gate, and
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8A79
Abstract: SMD transistors 33T cable tv amplifier SSOP28 TDA5732 TDA6402 TDA6402M TDA6403 TDA6403M TSA5526
Contextual Info: Philips Semiconductors Preliminary specification 5 V mixer/oscillator and synthesizer for cable TV and VCR 2-band tuners TDA6402; TDA6403 FEATURES • Single-chip 5 V mixer/oscillator and synthesizer for cable TV and VCR tuners • Synthesizer function compatible with existing TSA5526
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Diode SV-02
Abstract: 424 8P 850 nm LED for fiber-optic sensor 850 nm photodiode for fiber-optic sensor 850nm photodiode Fiber-optic fiber-optic photodiode for 850nm photodiode for fiber-optic sensor 850 nm TRANSIMpedance Amplifier NE5211D SA5211
Contextual Info: INTEGRATED CIRCUITS NE/SA5211 Transimpedance amplifier 180MHz Product specification 1995 Apr 26 IC19 Philips Semiconductors PHILIPS 7110fl2tj ODfl^T^a DDT • ! Philips Semiconductors Product specification Transimpedance amplifier (180MHz) NE/SA5211 DESCRIPTION
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ne/sa5211180mhz7110fl2tj28ki2+12sot108-1076e06sdiode sv-02424 8p850 nm led for fiber-optic sensor850 nm photodiode for fiber-optic sensor850nm photodiode fiber-opticfiber-optic photodiode for 850nmphotodiode for fiber-optic sensor 850 nmtransimpedance amplifierne5211dsa5211
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al 60 dv 2425
Contextual Info: hSE B PHILIPS INTERNATIONAL • 711GÖSb DGbSSMT 7 7 CJ H P H I N BT136F SERIES FULL-PACK TRIACS Glass-passivated 4 ampere triacs in SOT-186 envelopes, which feature an electrically isolated m ounting base. They are intended fo r use in applications requiring high bidirectional transient and blocking
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TOKO RMC 2A6597H
Abstract: 2A6597H ICM4712701 RMC-2A6597H TOKO 455KHz ceramic filter SFG455 SFG455A3 TOKO 455KHz filter signetics rf Receiver Circuits signetics PLL
Contextual Info: SÖE D PH ILI PS INTERNATIONAL 711QflHb QQSQQbl 7H1 « P H I N Slgnetics RF Communications Preliminary specification Low-voltage high performance mixer FM IF system DESCRIPTION The NE/SA617 is a low voltage high performance monolithic FM IF system incorporating a mixer/oscillator, two limiting
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exo 35j
Abstract: 80C51 80C550 83C550 87C550 eprom 2532 1031H lme3
Contextual Info: • 711Gfi2b DGbbMl? bTT ■ PHIN Philips Semiconductors Microcontroller Products Product specification CMOS single-chip 8-bit microcontroller with A/D and watchdog timer DESCRIPTION FEATURES The Philips 8XC550 is a high-performance microcontroller fabricated with Philips
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extra bass circuit diagram
Abstract: TEA6310T TEA6310 extra bass circuit ELFI capacitor S028 bass mid treble control circuit BASS mid TREBLE CIRCUIT 7Z23 4682
Contextual Info: TEA6310T SOUND FADER CONTROL CIRCUIT GENERAL DESCRIPTION The Sound Fader C o n tro l c irc u it SOFAC is an l 2C-bus co n tro lle d tone and volum e co n tro l c irc u it fo r car radios. Features • V olum e and balance c o n tro l; co n tro l range o f 86 dB in steps o f 2 dB
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tea6310t711d02t711005b711002b+9extra bass circuit diagramtea6310extra bass circuitelfi capacitors028bass mid treble control circuitbass mid treble circuit7z234682
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SMD MARKING CODE s4
Abstract: BBY62 sot143 TOP marking 16 "MARKING CODE S4" device marking code S4 S4 SMD Marking Code smd diode code S4 SOT143 package
Contextual Info: Philips Semiconductors Product specification UHF variable capacitance double diode BBY62 FEATURES • Excellent linearity • Small plastic SMD package • C28:1.9 pF; ratio: 8.3. 4 3 4 3 ÆD APPLICATIONS • Electronic tuning in UHF television tuners • vco.
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bby62ot143125ectionssmd marking code s4+6sot143 top marking 16marking code s4device marking code s4s4 smd marking codesmd diode code s4sot143 package
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4BB7
Abstract: a699 3843 application note RBL 43 P TRANSISTOR MAB8048 MAB8400 PC10 PC11 PCD33XXA
Contextual Info: Product specification Philips Semiconductors 8-bit telecom microcontrollers PCD33XXA Family 1 INTRO D UCTIO N 3 G ENERAL DESCRIPTION This data sheet describes the shared properties of the PCD 33XXA fam ily of m icrocontrollers and its quickly growing num ber of derivative m icrocontrollers. For a
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691H
Abstract: PLCC68 SAA7111 SAA7151B SAA7184 SAA7185B 117h
Contextual Info: Philips Semiconductors Preliminary specification Digital Video Encoders DENC2-M6 SAA7184; SAA7185B FEATURES • CMOS 5 V device • Digital PAL/NTSC encoder • System pixel frequency 13.5 MHz • Accepts MPEG decoded data • 8-bit wide MPEG port GENERAL DESCRIPTION
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74ABT373
Abstract: 74ABT573A 74ABT573AD 74ABT573AN 7ABT573APW GCHG420
Contextual Info: INTEGRATED CIRCUITS 74ABT573A Octal D-type transparent latch 3-State Product specification 1995 May 22 IC23 Data Handbook Philips Semiconductors PHILIPS PH ILIPS 711002b 0CH0417 =140 This Material Copyrighted By Its Respective Manufacturer Philips Semiconductors
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tda8367
Abstract: TDA9162 DBS13P TDA8351A TDA8366 TDA9150 TDA9151B TDA9160A
Contextual Info: IN TEG R A TED C IR C U ITS TDA8351A DC-coupled vertical deflection output circuit O bjective specification File under Integrated Circuits, IC02 January 1995 Philips Semiconductors PHILIPS P H IL IP S 7 11 DA 2L , □Dflb4El T17 This Material Copyrighted By Its Respective Manufacturer
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POCSAG
Abstract: icl 7103 173 MHz RF receiver LQFP32 PCD5003 PCF5001 S028 UAA2080 UAA2080H UAA2080T
Contextual Info: Philips Semiconductors Product specification Advanced pager receiver UAA2080 FEATU RES G EN ER A L DESCRIPTION • Wide frequency range: VHF, UHF and 900 MHz bands The UAA2080 is a high-performance low-power radio receiver circuit primarily intended for VHF, UHF and
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