7Z810 Search Results

SILICON DIFFUSED POWER TRANSISTOR

Abstract: T200I specification of curve tracer bu705 philips semiconductor BU705 700 v power transistor
Contextual Info: Philips Semiconductors Product specification Silicon diffused power transistor BU705 High-voltage, high-speed switching, glass passivated npn power transistor in a SO T93A envelope, intended fo r use in horizontal deflection circuits o f television receivers.

Contextual Info: BD202F; BD204F BDX78F PHILIPS in t e r n a t io n a l SbE ]> • 7110fl2t 0042fl5b flbO M P H I N T-33-17 SILICON EPITAXIAL POWER TRANSISTORS PNP silicon power transistors in SOT186 envelopes with an electrically insulated mounting base. NPN complements are BD201F, BD203F and BDX77F respectively.

946f

Contextual Info: BD944F;946F BD948F PHILIPS INTERNATIONAL SbE » • 7110fl2b 00430^5 17T ■ P H I N r - 7 ? - ' / cr SILICON EPITAXIAL POWER TRANSISTORS PNP silicon epitaxial power transistors each in a SOT186 envelope with an electrically insulated mounting base. NPN complements are BD943F, BD945Fand BD947F.

BOT65C

Abstract: 65AF BDT64AF BDT64BF BDT64CF BDT64F BDT65AF BDT65BF BDT65CF BDT65F
Contextual Info: BDT65F; BDT65AF bDT65BF; BDT65CF J SILICON DARLINGTON POWER TRANSISTORS NPIM silicon darlington power transistors in a SOT 186 envelope w ith an electrically insulated mounting base. The devices are designed fo r audio o u tp u t stages and general am plifier and switching applications.

TIP3055 Collector Peak Current

Abstract: 1U105 TIP2955 TIP3055 transistor TIP3055 transistor tip2955
Contextual Info: TIP2955 A _ SILICON POWER TRANSISTOR P-N-P epitaxial-base power transistor in a plastic SOT-93 envelope, fo r use in audio ou tput stages and general am plifier and switching applications. N-P-N complement is TIP3055. Q UICK REFERENCE D A T A Collector-base voltage open em itter

TIP47

Abstract: TIP48 TIP49 TIP50
Contextual Info: N AMER P H I L I P S / D I S C R E T E blE D • 3(353131 OD^ñblP 3 5 7 ■ APX TIP47; TIP48 TIP49; TIP50 SILICON DIFFUSED POWER TRANSISTORS M edium -voltage, high-speed, glass-passivated NPN p ow er transistors in T 0 -2 2 0 envelope fo r a m p lifie r

Contextual Info: BD644F;646F BD648F; 650F BD652F PHILIPS INTERNATIONAL 5bE D 711005b 0042^54 bDb M P H I N T -33~ 3j SILICON DARLINGTON POWER TRANSISTORS PNP silicon Darlington transistors in a SOT186 envelope with an electrically insulated mounting base. NPN complements are BD643F, BD645F, BD647F, BD649F and BD651F.

BDT64AF

Abstract: BDT64BF BDT64CF BDT64F BDT65AF BDT65BF BDT65CF BDT65F r64A 004887
Contextual Info: BDT64F; BDT64AF BDT64BF: BDT64CF PHILIPS INTERNATIONAL SbE T> • VllDflEti 00432Ö2 CHI ■ P H I N SILICON DARLINGTON POWER TRANSISTORS PNP Silicon Darlington power transistors in a SO T 1 8 6 envelope with an electrically insulated mounting base. The devices are designed for audio output stages and general amplifier and switching applications.

TIP135

Abstract: TIP136 TA76 TIP130 TIP131 TIP132 TIP137
Contextual Info: TIP135 TIP136 TIP137 PHILIPS INTERNATIONAL SbE D • 711002t. 00L<35aa Tbl T -3 3 ■ P H IN 3 I SILICON DARLINGTON POWER TRANSISTORS P-N-P epitaxial-base transistors in m onolithic Darlington circu it fo r audio o u tp u t stages and general am plifier and switching applications. TO-220AB plastic envelope. N-P-N equivalents are TIP130

pin diagram for IC 4580

Abstract: tda4580 V1124 a4580 lm 4580 TDA4555 VQ24
Contextual Info: J TDA4580 V _ VIDEO CONTROL COMBINATION CIRCUIT w ith a u to m atic c u t- o ff control G ENERAI DESCRIPTION The TD A 4580 is a m o n olithic integrated circu it which performs video control functions in television receivers w ith a colour difference interface. For example it operates in conjunction the multistandard

TIP136

Abstract: TIP137 TIP137 Darlington transistor TIP130 TIP131 TIP132 TIP135 ip12
Contextual Info: TIP135 TIP136 TIP137 SILICON DARLINGTON POWER TRANSISTORS P-N-P epitaxial-base transistors in monolithic Darlington circuit for audio output stages and general amplifier and switching applications. TO-220AB plastic envelope. N-P-N equivalents are TIP130, TIP131 and TIP132.

BB5M3

Abstract: BUT21A BUT21 BUT21BF BUT21CF IEC134 but21c
Contextual Info: N AMER PHILIPS/DISCRETE 25E D II bbS.BT31 D010Ô43 a I • BUT21BF BUT21CF X T - 3 3 -0 7 SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed, glass-passivated npn power transistor in a SOT186 envelope with electrically isolated seating plane. Intended for use in converters, inverters, switching regulators, motor control

SAA9050

Abstract: SAA9057 TDA9045 horizontal COLOUR TV SCHEMATIC DIAGRAM
Contextual Info: DEVELOPMENT DATA TO SAA9050 T h is d a ta sheet co n ta in s advance in fo rm a tio n and s pecification s are su b jec t to change w it h o u t n o tic e . BUS SUPERSEDES D A TA OF DECEMBER 1988 DIGITAL MULTISTANDARD TV DECODER GENERAL DESCRIPTION The SAA9050 digital multistandard decoder DMSD performs demodulation and decoding o f all

b0725

Abstract: B0719 BD721 TRANSISTOR L 287 A b0721 BD723 BD439 BD719 BD720 BD725
Contextual Info: BD719 BD721 BD723 BD725 PHILIPS INTERNATIONAL SbE 3 • 711002b 0 0 4 2 citîb ObS ■ PHIN 7 -33-tl SILICON EPITAXIAL-BASE POWER TRANSISTOR NPN transistor in a SOT32 plastic envelope intended fo r use in audio o u tp u t and general purpose am plifier applications. BD719 is equivalent to BD439. PNP complements are BD720; 722; 724 and

OFWG*3203

Abstract: OFWG colour tv power supply bu 1802 chn 719 TRANSISTOR NPN D313 TDA3654 equivalent R1413 TDA2653 colour tv power supply circuit diagram TDA2578
Contextual Info: Philips Semiconductors Semiconductors for Television and Video Systems Contents PART A page SELECTION GUIDE Functional index 5 Numerical index 17 Maintenance list 27 GENERAL Quality 31 Pro Electron type numbering system for Discrete Semiconductors 31 Pro Electron type numbering system for Integrated Circuits

VERTICAL COLOUR TV SCHEMATIC DIAGRAM

Abstract: SAA9050 TDA9045
Contextual Info: Philips Components Data shaat status Preliminary specification data of Issua July 1990 SAA9051 Digital multistandard TV decoder with separate chrominance and luminance inputs FEATURES GENERAL DESCRIPTION • All operations based on a sampling frequency of 13.5 MHz, providing:

silicon power 2GB

Abstract: 63BF CT54 BDT63CF D 711 N 60 T D04-3 bdt63b npn BDT63F 63CF BDT62AF
Contextual Info: BDT63F; BDT63AF VBDT63BF; BDT63CF j SbE T> PHILIPS INTERNATIONAL m 711002b 00432bb • PHIN SILICON DARLINGTON POWER TRANSISTORS NPN silicon darlington power transistors in a SO T186 envelope w ith an electrically insulated mounting base. The devices are designed fo r audio output stages and general am plifier and switching applications.

BD204

Abstract: BD202F til 31a BD201F BD203F BD204F BDX77F BDX78F Philips 119
Contextual Info: _ PHILIPS INTERNATIONAL SbE D • BD202F; BD204F BDX78F J 7110Û2L 0042fl5b flbO M P H I N T-33-l7 SILICON EPITAXIAL POWER TRANSISTORS PNP silicon power transistors inSOT186 envelopes with an electrically insulated mounting base.

Contextual Info: N AMER PHILIPS/DISCRETE 35E D • bbS3T31 D01flbT3 4 I BUP23B BUP23C T - 3 3 - f S' -SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed, glass-passivated npn power transistors in a SOT93 envelope, intended for use in converters, inverters, switching regulators, motor control systems etc.

con10a

Abstract: BUW133A BUW133 BUW133H 10 N j 400 V tsv 518
Contextual Info: 001^037 DEVELOPMENT DATA fl • BUW133 SERIES This data sheet contains advance information and specifications are subject to change w ithout notice. N AMER P H I L I P S / D I S C R E T E 25E . T -3 3 -J 3 NPN SILICON POWER TRANSISTORS High-voltage, glass-passivated power transistors In SOT93 envelope, intended for use In very fast

BU506DF

Abstract: BU506F
Contextual Info: I I N AMER PHILIPS/DISCRETE b'iE » • bbSa'ìai 3 Jl 0DEÖES7 T U J ■ APX BU506F BU506DF SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed switching npn transistor in a SOT186 envelope, intended fo r use in horizontal deflection circuits o f colour television receivers and in line-operated switch-mode applications.

7281660

Abstract: BU506DF
Contextual Info: Philips Semiconductors Product specification Silicon diffused power transistor BU506DF High-voltage, high-speed switching npn transistor in a SOT186 envelope, intended fo r use in horizontal deflection circuits o f colour television receivers and in line-operated switch-mode applications.

BDT64C

Abstract: BDT65 BDT65A BDT64A BDT64 7Z66 BDT64B BDT65B BDT65C
Contextual Info: n o n - BDT64; 64A BDT64B; 64C SILICON DARLINGTON POWER TRANSISTORS P-N-P epitaxial base transistors in m o n o lith ic Darlington c irc u it fo r audio o u tp u t stages and general purpose a m p lifie r and switching applications. TO-22C plastic envelope. N-P-N complements are BDT65,

BUV83

Abstract: BUV82
Contextual Info: N AMER PHILIPS/DISCRETE SSE D • aoiöw m BUV82 BUV83 r - 3 3 -1 3 SILICON DIFFUSED POWER TRANSISTORS High voltage, high speed switching npn power transistor in plastic S O T 9 3 envelope, intended for use in converters, inverters, switching regulators, motor control systems and switching applications.