60V transistor npn 2a switching applications
Abstract: 60V transistor npn 2a BD719 Audio Output Transistor Amplifier BD720
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BD719 DESCRIPTION •DC Current Gain: hFE= 40@ IC= 0.5A ·Collector-Emitter Breakdown Voltage : V BR CEO= 60V(Min) ·Complement to type BD720 APPLICATIONS ·Designed for use in audio output and general purpose
|
Original
|
bd719bd72060v transistor npn 2a switching applications60v transistor npn 2a+1audio output transistor amplifier
|
PDF
|
BD721
Abstract: BD723 B0719 equivalent bd439 b0721 BD439 BD719 BD720 BD725 BD726
Contextual Info: BD719 BD721 I I B D 7 2 3 BD725 SILICON EPITAXIAL-BASE POWER TRANSISTOR NPN transistor in a SOT32 plastic envelope intended fo r use in audio output and general purpose amplifier applications. BD719 is equivalent to BD439. PNP complements are BD720; 722; 724 and
|
OCR Scan
|
bd719bd721bd723bd725+6bd439bd720bd726b0719equivalent bd439b0721
|
PDF
|
39N20
Abstract: BD723
Contextual Info: BD719 BD721 BD723 BD725 P H I L IP S I N T E R N A T I O N A L SbE D I 7 1 1 0 0 2 b 0 0 4 2 1 *^ ObS • PHIN 7 - 3 3 - tl SILICON EPITAXIAL-BASE POWER TRANSISTOR NPN transistor in a SOT32 plastic envelope intended for use in audio output and general purpose
|
OCR Scan
|
bd719bd721bd723bd725+4bd439bd720bd72639n20
|
PDF
|
b0725
Abstract: B0719 BD721 TRANSISTOR L 287 A b0721 BD723 BD439 BD719 BD720 BD725
Contextual Info: BD719 BD721 BD723 BD725 PHILIPS INTERNATIONAL SbE 3 • 711002b 0 0 4 2 citîb ObS ■ PHIN 7 -33-tl SILICON EPITAXIAL-BASE POWER TRANSISTOR NPN transistor in a SOT32 plastic envelope intended fo r use in audio o u tp u t and general purpose am plifier applications. BD719 is equivalent to BD439. PNP complements are BD720; 722; 724 and
|
OCR Scan
|
bd719bd721bd723bd725+97110fl2b0042cnbbd439bd720bd726b0725b0719transistor l 287 ab0721
|
PDF
|
b0724
Abstract: B0719 BD722 transistor bu 311 B0720 BD724 BD440 BD719 BD720 BD726
Contextual Info: BD720 BD722 BD724 BD726 PHILIPS INTERNATIONAL SLE D • 7110fl2ti 0043004 Ô3T M P H I N T - 3 J - 11 SILICON EPITAXIAL-BASE POWER TRANSISTOR PNP transistor in a SOT32 plastic envelope intended for use in audio output and general purpose amplifier applications. BD720 is equivalent to BD440. NPN complements are BD719; 721; 723 and
|
OCR Scan
|
bd720bd722bd724bd726+7711002bbd440bd719b0724b0719transistor bu 311b0720
|
PDF
|
equivalent io transistor 131-G
Contextual Info: BD719 BD721 BD723 BD725 _ J V SILICON EPITAXIAL-BASE POWER TRANSISTOR NPN transistor in a SO T 32 plastic envelope intended for use in audio output and general purpose amplifier applications. BD719 is equivalent to BD439. PNP complements are BD720; 722; 724 and
|
OCR Scan
|
bd719bd721bd723bd725+4bd439bd720bd726equivalent io transistor 131-g
|
PDF
|
|
Contextual Info: _ J V BD720 BD722 BD724 BD726 SILICON EPITAXIAL-BASE POWER TRANSISTOR PNP transistor in a SOT32 plastic envelope intended for use in audio output and general purpose amplifier applications. BD720 is equivalent to BD440. NPN complements are BD719; 721; 723 and
|
OCR Scan
|
bd720bd722bd724bd726+2bd440bd719
|
PDF
|
equivalent bd439
Abstract: D0344 b0721 B0719 BD725 B0720 BD439 BD721 BD719 BD720
Contextual Info: BD719 BD721 BD723 BD725 I SILICON EPITAXIAL-BASE POWER TRANSISTOR NPN transistor in a SOT32 plastic envelope intended fo r use in audio output and general purpose amplifier applications. BD719 is equivalent to BD439. PNP complements are BD720; 722; 724 and
|
OCR Scan
|
bd719bd721bd723bd725+8bd439bd720bd726equivalent bd439d0344b0721b0719b0720
|
PDF
|
2SD568L
Abstract: idb674 2N547 2SD569L nec npn rf 2SD8430 2SD568K
Contextual Info: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A V (BR)CEO Of) PD Max hFE *T ON) Min (Hz) Max k)N Max (A) (s) ICBO r (CE)Mt Max (Ohms) Toper Max Package Style CO D vices 20 Watts or More, (Cont'd) 5 10 2SA1185 2SB827 2SD1063 2SB754
|
Original
|
2sa11852sb8272sd10632sb754+132sd844et15512sb12242sd16262sa14422sc36922sd568lidb6742n5472sd569lnec npn rf2sd84302sd568k
|
PDF
|
transistor f6 13003
Abstract: equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350
Contextual Info: W IDEBAND TRANSISTORS AND W IDEBAND HYBR ID 1C MODULES page P refa ce. 3 Selection guide Wideband transistors.
|
OCR Scan
|
sc08btransistor f6 13003equivalent transistor bj 131-6transistor eb 13003 bm+7bb112smd transistor code marking 2f 6na1211 lgcqy58bu705transistor 131-6 bj 026philips om350
|
PDF
|
BGY41
Abstract: BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc
Contextual Info: SMALL-SIGNAL FIELD-EFFECT TRANSISTORS page Selection guide N-channel junction field-effect transistors general purpose. for differential am plifiers.
|
OCR Scan
|
lcd01bgy41bfw10 fet transistorcqy58+7germaniumrx101equivalent components fet bfw10bd643bf199283 to92 600a transistorzener phc
|
PDF
|
FET BFW10
Abstract: KP101A FET BFW11 BDX38 KPZ20G CQY58A BFW10 FET RPW100 B0943 OF FET BFW11
Contextual Info: INDEX _ INDEX OF TYPE NUM BERS The inclusion of a type number in this publication does not necessarily imply its availability. Type no. book section Type no. book section Type no. book section BA220 BA221 BA223 BA281 BA314 SCOI SCOI SCOI SCOI
|
OCR Scan
|
ba220ba221ba223ba281+16ba314ba315ba316ba317ba318ba423fet bfw10kp101afet bfw11bdx38kpz20gcqy58abfw10 fetrpw100b0943of fet bfw11
|
PDF
|