TRANSISTOR D 659 Search Results

transistor BUX

Abstract: BUX10 bux THOMSON 4682 bux 10
Contextual Info: *BUX10 NPN SILICON TRANSISTOR, TRIPLE DIFFUSED TR A N S IS TO R S IL IC IU M NPN, T R IP L E D IF F U S E % Preferred device D isp o sitif recommandé High speed, high current, high power transistor Transistor de puissance rapide, fo rt courant 125 V 25 A

tip122 tip127 audio amp schematic

Abstract: mje521 equivalent BJT small signal low power BD139 MJ15003 300 watts amplifier 2N3773 pinout transistor mj11032 equivalent MJ11028 transistor equivalent 2n3055 IC 2N3773 audio amplifier diagram 2n222 TRANSISTOR use as audio amplifier
Contextual Info: DL111/D Rev. 8, July-2001 Bipolar Power Transistor Data Bipolar Power Transistor Data DL111/D Rev. 8, Jul–2001  SCILLC, 2001 Previous Edition  1995 “All Rights Reserved’’ Grafoil is a registered Trademark of Union Carbide. Kon–Dux and Rubber–Duc are trademarks of Aavid Thermal Technologies, Inc.

613 GB 123 CT

Contextual Info: PRELIMINARY DATA SHEET SILICON TRANSISTOR uPA812T HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC4227 SMALL MINI MOLD The /xPA812T has built-in 2 low-voltage transistors which are designed to PACKAGE D R A W IN G S

GT45F122

Abstract: gt30g122 gt30f122 gt45f123 GT45f122 Series gt35j321 GT45G122 gt60n323 *45F122 GT45F124
Contextual Info: 2008-3 PRODUCT GUIDE Discrete IGBTs s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g 1 Features and Structure IGBT: Insulated Gate Bipolar Transistor IGBTs combine the MOSFET advantage of high input impedance with the bipolar transistor

NE68135

Abstract: transistor npn d 2078 common emitter bjt transistor bf 494 NE68133-T1B-A mje 3009
Contextual Info: SILICON TRANSISTOR NE681 SERIES NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 8 GHz rs e b m : u E n ot T t n O r . e a N r n p a g E i g t S s n e A i e e E d w h o l w PL l as r e t o n o f a f r d e DESCRIPTION e o

SOT173

Abstract: D-045 BFQ66 philips 586 K1HC k 219 transistor
Contextual Info: Philips Semiconductors Product specification / Ÿ NPN 8 GHz wideband transistor P H IL IP S I N T E R N A T I O N A L DESCRIPTION SbE P • BFQ66 711Dfl2b 0 D 4 5 4T 5 3^b ■ P H I N PINNING Small-signal planar epitaxial NPN transistor in hermetically-sealed

AN5296 Application of the CA3018 Integrated

Abstract: TA618 ca3083 relay ts4 harris transistors transistor 102 CA3183 transistor 9-t TA6183 DARLINGTON TRANSISTOR ARRAY
Contextual Info: HARRIS SEflICOND SECTOR blE D • 43DP271 004703S bSG H H A S CA3146, CA3183 33 H a r r i s S E M I C O N D U C T O R ■ W » W W High-Voltage Transistor Arrays March 1993 Features Description • Matched General Purpose Transistors • VBE Matched ±5mV Max

ecn 3-Phase Motor Driver IC

Abstract: BA6871 BA6871BS SDIP32 motor breaker gv2
Contextual Info: Motor driver ICs 3-phase motor driver BA6871BS The BA6871 BS is a 3-phase, full-w ave, p se u d o -lin e a r m o to r driver suite d for VCR cap stan m otors. The IC has a torque ripple cancellation circuit to reduce w ow and flutter, and an output transistor saturation prevention circuit that

VDE0860

Abstract: IEC435 VDE0113 VDE0160 VDE0805 VDE0832 VDE0833 VDE0883 OPTO-ISOLATOR optoisolator MCT2E
Contextual Info: MOTOROLA • i S E M IC O N D U C TO R TECHNICAL DATA M C T2 M CT2E 6-P in D IP O p to is o la to rs Transistor Output These device s co n s is t o f a g a lliu m arsen id e in fra re d e m ittin g d io d e o p tic a lly c o u p le d to a m o n o lith ic s ilic o n p h o to tra n s is to r dete cto r.

BT3904

Abstract: MBT3904T
Contextual Info: To Lynn Murphy From Motorola Mfax Ph: 602-244-6591 Fax: 602-244-6693 08/18/97 09:22 03/08 Order this data sheet by M M BT3904T/D M OTOROLA SEMICONDUCTOR TECHNICAL DATA N P N S ilic o n A n n u lar T ran sisto r • • • • • S w itching Transistor Designed fo r Low C urrent S w itching

NEC Ga FET marking L

Abstract: ap 2761 l transistor NEC D 822 P nec gaas fet marking nec 2761 NEC 426 NEC Ga FET low noise FET NEC U
Contextual Info: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE434S01 C BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET D ES C R IP TIO N The NE434S01 is a Herero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for TVRO

TRANSISTOR 2SC 1617

Abstract: 2sc1617 ssie SSIE 12 transistor z5t AC73 TRANSISTOR 2SC transistor z9
Contextual Info: 2 s c 1617 SILICON NPN TR IP LE D IFFUSED MESA TRANSISTOR TENTATIVE O B i t I' xjiW -mfatoyiM U n it in mm MOUNTING K I T N 0 .A C 7 3 E L E C T R IC A L C H A R A C T E R IST IC S / “ N jH A H A C T E R I S T I C * V * ? *• í L W\ fL'Û . -y * L ■+ m « a

A659

Contextual Info: SILICON N CHANNEL JUNCTION TYPE FIELD EFFECT TRANSISTOR 2SK210 U n it in m m F M T U N E R A P P L IC A T IO N S . t-Üft 2.£-Q3 V H F B A N D A M P L IF IE R A P P L IC A T IO N S . + Q.2 r> l. b - Q i 5 • H ig h P o w er G a in : G p s = 24dB Typ. ( f = 100M H z)

motorola 9100-11

Abstract: Battery Managements MC33120 MC33120P mjd41 rs 3060 cj 1N4002 MC33120FN ST12 ST21
Contextual Info: 02/18/:0 06:24 To Keith Ellis From Motorola Mfax Ph: 602-244-6591 Fax: 602-244-6693 03/33 Order this data shoot by MC33120/D l o i f - i°fO MOTOROLA MC33120 SEMICONDUCTOR TECHNICAL DATA Subscriber Loop Interface Circuit SUBSCRIBER LOOP INTERFACE CIRCUIT SLIC

thyristor T122

Abstract: TLP647 tlp 748 634 transistor TRANSISTOR P 3 TLP622 TLP121-4 51 ria 40 ic 747 cn R524
Contextual Info: Page ” N” : Technical Data is not included in this Data Book. 3. Alphanumeric Index Type TLP1 37 TLP141G TLP1 60G TLP160J TLP161G TLP161J TLP168J TLP1 81 TLP1 90 TLP1 9 0B T L P 191 T L P 191 B TLP215 TLP216 TLP227G T LP 2 2 7 G -2 TLP250 TLP 2 5 1 T LP 2 9 6 G

Contextual Info: Philips Semiconductors bb 5 3 S 31 0 0 2 T 2 b 7 72A H APX Product specification UHF push-pull power transistor BLV948 N AMER PHILIPS/DISCRETE FEATURES • Double input and output matching for easy matching and high gain • Poly-silicon emitter-ballasting

c38 transistor

Abstract: PHILIPS 4330 030 36300 transistor tt 2222 c39 transistor L33 TRANSISTOR TT 2222 npn 4330 030 36 ferroxcube FERROXCUBE 4330 b3171 transistor c37
Contextual Info: t m 7110821, D0b31t,4 m BIPHIN Philips Semiconductors_ _ . . bSE T> PHILIPS INTERNATIONAL UHF push-pull power transistor FEATURES • Double input and output matching for easy matching and high gain QUICK REFERENCE DATA RF performance at Th = 25 °C in a common emitter test circuit.

CPM2C

Abstract: CPM2C-24EDT 200T1 CPM2C-CIF01-V1 A106 Micro Capacitor CPM2c-32EDT 3G3HV manual CQM1-CIF11 inverter omron 3G3HV transistor pnp a110
Contextual Info: Micro Programmable Controller CPM2C Omron’s powerful CPM2C micro controller redefines the traditional micro PLC. The CPM2C’s 33 mm width allows it to fit into small spaces, offers 119 instructions, and has processing speeds rivaling many ‘small’ PLCs.

OPB960N55

Abstract: marking code ny SMD Transistor npn OPB840L51 Package TO-78 E23 SMD Transistor A1 MEXICO TRANSMISSIVE SENSOR OPB840L55 OPB365T55 OPB875N51 OPB970N51
Contextual Info: OPTEK products are in applications that are a part of your everyday life. We can be found in automobiles, office equipment, vending machines, banks, hospitals, home security, architectural lighting, industrial plants, military and aerospace applications and even at sports games or

2n3055 motorola

Abstract: tip122 tip127 audio amp schematic transistor equivalent book 2sc2238 IR640 transistor motorola 40411 TRANSISTOR REPLACEMENT GUIDE ir431 motorola AN485 C2688 2SA1046
Contextual Info: Index and Cross Reference 1 Selector Guide 2 Data Sheets 3 Surface Mount Package Information and Tape and Reel Specifications 4 Outline Dimensions and Leadform Options 5 Applications Information 6 Thermal Clad is a trademark of the Bergquist Company. Chipscretes, Designers’, Duowatt, EpiBase, PowerBase, PowerTap, SUPERBRIDGES, Surmetric, Switchmode, Thermopad,

BUK573

Abstract: BUK573-100A BUK573-100B
Contextual Info: Philips C om ponents Data sheet status P re lim in a ry s p e c ific a tio n date of issue March 1991 R e p la c e s B U K 5 4 3 -1 0 0 A /B PHILIPS BUK573-100A/B PowerMOS transistor Logic level FET INTERNATIONAL GENERAL DESCRIPTION N-channel enhancement mode

Contextual Info: - 7 ^ 3 9 - Philips Components Data sheet status Preliminary specification date of issue March 1991 R eplaces BUK543-100A/B N-channel enhancement mode logic level field-effect power transistor in a plastic full-pack envelope. The device is intended for use in

Contextual Info: SIEMENS 2-Phase Stepper-Motor Driver TLE 4728 Prelim inary Data Bipolar-IC Features • • • • • • • • • • 2 x 1 amp. full bridge outputs Integrated driver, control logic and current control chopper Fast free-wheeling diodes Max. supply voltage 45 V

NEC 10F triac

Abstract: TLP250 MOSFET DRIVER p421f p421 coupler P181 Photocoupler tlp3065 TLP3083 TLP520 TLP250 MOSFET DRIVER application note 5252 F 4-pin
Contextual Info: 2008-3 PRODUCT GUIDE Photocouplers and Photorelays s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g 1 Product Index Part Number Package Output Page TLP102 TLP106 TLP112 TLP112A TLP113 TLP114A TLP114A IGM TLP115 TLP115A TLP116 TLP117