SOT173X Search Results

Contextual Info: Philips Semiconductors ^53^31 0031521 m b B i APX Product specification PNP 5 GHz wideband transistor . — — — BFQ23C i N A-flER PHILIPS/DISCRETE DESCRIPTION b'lE T> PINNING PNP transistor in hermetically-sealed, sub-miniature, SOT173 and SOT173X micro-stripline envelopes. It is

Contextual Info: Philips Sem iconductors bb53T31 0031477 00T tM APX Product specification NPN 6 GHz wideband transistor BFP91A N AMER PHILIPS/DISCRETE DESCRIPTION bRE D PINNING NPN transistor in hermetically-sealed sub-miniature SOT173 and SOT173X micro-stripline envelopes. It features

TRANSISTOR c 5578 B

Abstract: 603 transistor npn
Contextual Info: PhHjP^emjconductor^^ _ bbSBTBl 0 0 3 1 4 bT T3 E • A P X ^Productspecification NPN 5 GHz wideband transistor — DESCRIPTION BFP90A H AriER PHILIPS/DISCRETE blE ] PINNING NPN transistor in hermetically sealed, sub-miniature SOT173and SOT173X micro-stripline envelopes. It is

transistor t4B

Abstract: BFP91A tag 8726 BFQ23C Tag c0 665 800 transistor d 1557 0D31521 1557 transistor SOT173 SOT173 RF transistor
Contextual Info: i Philips Semiconductors 53*131 ^ DD31SE 1 T4b M i APX Product specification PNP 5 GHz wideband transistor . — — DESCRIPTION BFQ23C N AWER PHILIPS/DISCRETE PINNING PNP transistor in hermetically-sealed, sub-miniature, SOT 173 and SOT173X micro-stripline envelopes. It is

BFP96

Abstract: 880 411 000 GG45 BFQ32C Philips MBB D 1944 npn SOT173 BFP96 P6
Contextual Info: Philips Semiconductors Product specification NPN 5 GHz wideband transistor PHILIPS INTERNATIONAL DESCRIPTION 7^ 33 SbE D • BFP96 7 11 D Ô S L DD4537M ■PHIN 7ÔG PINNING NPN transistor in hermetically sealed sub-miniature SOT173 and SOT173X micro-stripline envelopes.

BFP96

Abstract: BFP96 P6 BFQ32C OA74 Philips MBB UBB824 1462, TRANSISTOR MB8627 transistor 1548
Contextual Info: Philips Semiconductors bbSB'ÎBl D D3 14Û 5 1ÔS M A P X Product specification NFN 5 GHz wideband transistor BFP96 N AMER PHILIPS/DISCRETE DESCRIPTION bRE ]> PINNING NPN transistor in hermetically sealed sub-miniature SOT173 and SOT173X micro-stripline envelopes.

Transistor 8c4

Abstract: amplifier TRANSISTOR 12 GHZ js t31 sA 673 transistor TRANSISTOR 618 transistor 1248 BFQ33C TRANSISTOR 12 GHZ GQH543T TRANSISTOR BO 345
Contextual Info: Philips Sem iconductors Product specification BFQ33C NPN 12 GHz wideband transistor PHILIPS INT ERNATIONAL DESCRIPTION SbE ]> 711DÔ5t. G Ü H 5 4 3 T 5 b7 • P H I N PINNING NPN transistor in hermetically-sealed, sub-miniature, SOT173 and SOT173X micro-slripline envelopes, primarily

Contextual Info: Philips Semiconductors bbS B 'JB l DDB lH fiS IfiS MAPX Product specification NPN 5 GHz wideband transistor BFP96 N AMER PHILIPS/DISCRETE DESCRIPTION bRE T> PINNING NPN transistor in hermetically sealed sub-miniature SOU 73 and SOT173X micro-stripline envelopes.

BFP91A

Abstract: BFP91A NPN PHILIPS BFQ23C SOT173
Contextual Info: PhilipsSemiconductors^^ gg bbSBTBl DQ31477 00^ M APX Product specification NPN 6 GHz wideband transistor BFP91A N AUER PHILIPS/DISCRETE DESCRIPTION bRE PINNING NPN transistor in hermetically-sealed sub-miniature SOT173 and SOT173X microstripline envelopes. It features

BFQ32C

Abstract: SOT173 philips 586 BFP96 wideband transistor sot173 SOT-173 MICROWAVE TRANSISTOR philips 586
Contextual Info: Philips Semiconductors ^^53^31 Q D 31535 S3G A P X ^^Productspecification PNP 4 GHz wideband transistor BFQ32C N A PIER P H I L I P S / D I S C R E T E DESCRIPTION b^E » PINNING PNP transistor in hermetically-sealed, sub-miniature, SOT173 and SOT173X micro-stripline envelopes. It is

transistor d 1710

Abstract: BFP96 1351 NPN TRANSISTOR transistor B 892 b 1624 transistor BFP96 P6 TRANSISTOR C 557 B transistor 1548 b D 1944 npn transistor 1548
Contextual Info: Philips S em iconductors Product specification T=33 NPN 5 GHz wideband transistor PHILIPS INTERNATIONAL DESCRIPTION SbE D • BFP96 711DÔSL DD4537M 7ÔG ■ P H I N PINNING NPN transistor in hermetically sealed sub-mlnlature SOT173 and SOT173X micro-stripline envelopes.

BFP90A

Abstract: SOT173 TRANSISTOR C 4460 RF NPN POWER TRANSISTOR C 10-12 GHZ npn transistor dc 558 TRANSISTOR D 471 1702 NPN transistor 150-1 SOT-173 c 3421 transistor
Contextual Info: Philips Sem iconductors Product specification NPN 5 GHz wideband transistor SbE T> PHILIPS INTERNATIONAL DESCRIPTION BFP90A • 711Dfl2b 00M53SÔ S3fl « P H I N PINNING NPN transistor in hermetically sealed, sub-miniature SOT173 and SOT173X mlcro-stripline envelopes. It is

TRANSISTOR 618

Abstract: BFQ33C UCD117 BFQ33 sot173and
Contextual Info: fcj fci SBTBl Philips S em iconductors 0 0 3 1 SSG AM? M APX Product specification BFQ33C NPN 12 GHz wideband transistor T> N AMER P H I L I P S / D I S C R E T E DESCRIPTION PINNING NPN transistor in hermetically-sealed, sub-miniature, SOT173and SOT173X micro-stripline envelopes, primarily

TRANSISTOR c 5578 B

Abstract: 603 transistor npn transistor 3bn TRANSISTOR C 4460 AG TRANSISTOR BFP90A 1702 NPN transistor ic 7818 npn transistor dc 558 transistor 3568
Contextual Info: Philips Semiconductors Product specification -p3 ~l 7 NPN 5 GHz wideband transistor PHILIPS INTERNATIONAL DESCRIPTION SbE I • BFP90A 711062b 00KS3SS 538 H P H I N PINNING NPN transistor in hermetically sealed, sub-miniature SOT173 and SOT173X micro-stripline envelopes. It is

SOT173 RF transistor

Contextual Info: Philips Semiconductors btiSB'lBl 0 0 31 4 ^ 3 S S I M A P X Preliminary specification NPN 9 GHz wideband transistor BFP505 N AMER P H ILIP S /D IS C R E TE FEATURES b'lE D PINNING • High power gain PIN • Low noise figure 1 collector • High transition frequency

TRANSISTOR C 4460

Abstract: RF NPN POWER TRANSISTOR C 10-12 GHZ TRANSISTOR c 5578 SOT173 BFP90A 1702 NPN transistor IN 5408 ZG TRANSISTOR D 471 1346 transistor c 3421 transistor
Contextual Info: P h jJ jP ^ e m jç o n d u c to r^ ^ bbS 3 T31 □Q 3 1 4 b eì T 3E M APX Product specification NPN 5 GHz wideband transistor BFP90A H DESCRIPTION A f lE R p H I L I p S / ] > IS < ; R E ; TE: bTE PINNING NPN transistor in hermetically sealed, sub-miniature

sot173x

Abstract: BFP505
Contextual Info: Philips Semiconductors Preliminary specification NPN 9 GHz wideband transistor PHILIPS INTERNATIONAL FEATURES ¡"^7 ”^“ 3 SbE D • BFP505 711DflSb QDMS3flS AS? ■ P H I N PINNING • High power gain • Low noise figure DESCRIPTION PIN • High transition frequency

transistor B 540

Abstract: TRANSISTOR 1221 sot173 SOT-173 wideband transistor sot173 transistor 541 SOT173 RF transistor
Contextual Info: O bjective specification P h ilip s S em icon du ctors T ^ 3 /-2 NPN 9 GHz wideband transistor PHILIPS INTERNATIONAL FEATURES SbE / BFP520 7110fl2b 0045303 7T3 H P H IN PINNING DESCRIPTION PIN • High power gain • Low noise figure 1 collector • High transition frequency

Contextual Info: Philips Semiconductors • bbS3T31 D0314T7 TT? W APX Objective specification NPN 9 GHz wideband transistor BFP540 N AMER PHILIPS/DISCRETE FEATURES b'lE D — PINNING • High power gain PIN • Low noise figure 1 collector DESCRIPTION • High transition frequency

Contextual Info: Philips Semiconductors ^ 53^ 31 0031bDb b lO M APX Product specification NPN 8 GHz wideband transistor ^ BFQ66 N DESCRIPTION AUER PHILIPS/DISCRETE b'lE » PINNING Small-signal planar epitaxial NPN transistor in hermetically-sealed sub-miniature SOT173 and

transistor f6 13003

Abstract: equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350
Contextual Info: W IDEBAND TRANSISTORS AND W IDEBAND HYBR ID 1C MODULES page P refa ce. 3 Selection guide Wideband transistors.

SOT173

Abstract: BFP520 MBB866 mbc860 wideband transistor sot173
Contextual Info: Philips Semiconductors Hi bbS3T31 GOBIMTM ITÒ APX Objective specification NPN 9 GHz wideband transistor ^ _ FEATURES PINNING BFP520 N AnER PHILIPS/DISCRETE DESCRIPTION • High power gain PIN • Low noise figure 1 collector • High transition frequency

Contextual Info: • I P h ilip s S em iconductors ^ 5 3 ^ 3 1 DO Sm ^M n fl M APX O bje ctive sp e c ific a tio n NPN 9 GHz wideband transistor ^ ^ FEATURES BFP520 N a HER PHILIPS/DISCRETE PINNING • High power gain PIN • Low noise figure 1 O’ n DESCRIPTION collector

SOT173

Abstract: SOT-173 wideband transistor sot173 BFP505 NPN planar RF transistor 5 GHZ TRANSISTOR
Contextual Info: Philips Semiconductors Preliminary specification NPN 9 GHz wideband transistor PHILIPS INTERNATIONAL FEATURES BFP505 SbE D • 711DflSb QDMS3flS AS? ■ P H I N PINNING • High power gain PIN • Low noise figure 1 DESCRIPTION O’ collector • High transition frequency