transistor B 540
Abstract: TRANSISTOR 1221 sot173 SOT-173 wideband transistor sot173 transistor 541 SOT173 RF transistor
Contextual Info: O bjective specification P h ilip s S em icon du ctors T ^ 3 /-2 NPN 9 GHz wideband transistor PHILIPS INTERNATIONAL FEATURES SbE / BFP520 7110fl2b 0045303 7T3 H P H IN PINNING DESCRIPTION PIN • High power gain • Low noise figure 1 collector • High transition frequency
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bfp520ot173xot1737110fl2b+8mbc860transistor b 540transistor 1221sot173sot-173wideband transistor sot173transistor 541sot173 rf transistor
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SOT173
Abstract: BFP520 MBB866 mbc860 wideband transistor sot173
Contextual Info: Philips Semiconductors Hi bbS3T31 GOBIMTM ITÒ APX Objective specification NPN 9 GHz wideband transistor ^ _ FEATURES PINNING BFP520 N AnER PHILIPS/DISCRETE DESCRIPTION • High power gain PIN • Low noise figure 1 collector • High transition frequency
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bfp520ot173xot173mbc860+4900mhzsot173mbb866wideband transistor sot173
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BF547A
Abstract: transistor bf 175 BFG65 equivalent BF547B BFG25AXD
Contextual Info: Philips Sem iconductors RF Wideband Transistors The New Generation Contents page PREFACE 3 SELECTION GUIDE 6 S-PARAMETERS 22 SPICE AND PACKAGE PARAMETERS 44 THERMAL CHARACTERISTICS 48 DEVICE DATA in alpha-num eric sequence 54 OUTLINES 442 INDEX 448 DEFINITIONS
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lcd01bf547atransistor bf 175bfg65 equivalent+2bf547bbfg25axd
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SOT173
Abstract: BFP520 BFP520 application notes sot-173 NPN planar RF transistor SOT173 RF transistor
Contextual Info: Objective specification Philips Semiconductors T^ 3/-Z / NPN 9 GHz wideband transistor PHILIPS INTERNATIONAL FEATURES SbE D BFP520 7110fl2b 0045303 7T3 H P H IN PINNING DESCRIPTION PIN • High power gain • Low noise figure 1 collector • High transition frequency
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bfp520ot173xot173711002b+7mbcb60mbb867sot173bfp520 application notessot-173npn planar rf transistorsot173 rf transistor
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