TRANSISTOR BUZ Search Results

TRANSISTOR BUZ Result Highlights (5)

Part	Manufacturer	Description	Download
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723	Datasheet
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold	Datasheet
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold	Datasheet
TTA012	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-80 V / IC=-4 A / hFE=100~200 / VCE(sat)=-0.22 V / tf=35 ns / PW-Mini	Datasheet
TPCP8514	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PS-8	Datasheet

TRANSISTOR BUZ Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: N AMER PHILIPS/DISCRETE : ObE D PowerMOS transistor • bb53131 0014651 S ■ BUZ310 May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies	OCR Scan	bb53131 BUZ310 T0218AA; T-39-11 bbS3T31 T-39-H	PDF
Contextual Info: , U na. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. PowerMOS transistor GENERAL DESCRIPTION BUZ84 QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a metal envelope.	Original	BUZ84	PDF
BUZ34 Abstract: 6j11 V103 Contextual Info: PowerMOS transistor N AMER PHILIPS/DISCRETE BUZ34_ ObE D • bb53T31 ODlMblS E ■ July 1987 GENERAL DESCRIPTION N-channel enhancement mode fleld-effect power transistor in a metal envelope. This device is intended for use in Switched Mode Power Supplies	OCR Scan	BUZ34 bb53T31 bb53131 T-39-1 BUZ34 6j11 V103	PDF
BUZ351 Contextual Info: N AMER PHILIPS/DISCRETE PowerMOS transistor = ObE D BUZ351 ^ ^ _ 3 • bki53ci31 0D147tt May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies	OCR Scan	BUZ351 T0218AA; T-39-13 BUZ351	PDF
BUZ54 Contextual Info: , Una. \l Cs 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 BUZ54 PowerMOS Transistor QUICK REFERENCE DATA GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a metal envelope.	Original	BUZ54 Tmb-25 Tj-25Â VR-100V BUZ54	PDF
BUZ14 Abstract: D1267 D0145 transistor buz L11F Contextual Info: BUZ14 PowerMOS transistor N A 1ER PHILIPS/DISCRETE ObE D btiSBTBl D0mS77 4 T-51 H3 July 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a metal envelope. This device is intended for use in Switched Mode Power Supplies	OCR Scan	BUZ14 D0mS77 T-51-13 BJJZ14 bbS3T31 BUZ14 D1267 D0145 transistor buz L11F	PDF
Contextual Info: BUZ74A PowerMOS transistor N AMER PHILIPS/DISCRETE ObE D • bfc.53131 0014514 5 ■ May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies	OCR Scan	BUZ74A BUZ74A_ T-39-1I bbS3T31 T-39-11	PDF
Contextual Info: N AflER PHILIPS/DISCRETE ObE D PowerMOS transistor • bbSB^l 0014535 T ■ “ BUZ78 May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies	OCR Scan	BUZ78 BUZ78_ D01454Q T-39-11	PDF
buz357 Abstract: Transistor 5331 MC 140 transistor Contextual Info: N AMER PHILIPS/DISCRETE DfaE D » PowerMOS transistor bb53^31 0 DIM fiM3 BUZ357^_ ^ May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies	OCR Scan	BUZ357^ T0218AA; bbSBT31 BUZ357 T-39-13 buz357 Transistor 5331 MC 140 transistor	PDF
MC 140 transistor Abstract: "MC 140" transistor transistor mc 140 BUZ385 T-39-13 MC 150 transistor Contextual Info: N AMER PHILIPS/DISCRETE QbE 3> PowerMOS transistor • bb53131 0014714 1 BUZ385 May 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. FREDFET* with fast-recovery reverse diode. This device is particularly suitable for motor	OCR Scan	bb53131 BUZ385 T0218AA; BUZ38S T-39-13 MC 140 transistor "MC 140" transistor transistor mc 140 BUZ385 T-39-13 MC 150 transistor	PDF
Contextual Info: N AMER PHILIPS/DISCRETE ObE D PowerMOS transistor " • bbS3TBl 00147BH B BUZ54A T -2 ? -/3 July 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a metal envelope. This device is intended for use in Switched Mode Power Supplies	OCR Scan	00147BH BUZ54A T-39-13 bbS3T31 0D1472T bb53131	PDF
Contextual Info: BUZ60 PowerMOS transistor N AMER PHILIPS/DISCRETE ObE D • v " bbSBTBl 0014475 1 ■ ^ # , * May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies	OCR Scan	BUZ60 O220AB; bbS3T31 001447b T-39-11 BUZ60_ T-39-u"	PDF
BUZ10 Contextual Info: N AUER PHILIPS/DISCRETE OLE D • PowerMOS transistor bb53T31 0014331 1 ■ BUZ10 r~ 1 May 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies	OCR Scan	bb53T31 BUZ10 D0143flb T-39-11 7Z21184 BUZ10_ BUZ10	PDF
BUZ358 Abstract: LDM80 Contextual Info: N AMER PHILIPS/DISCRETE OLE D PowerMOS transistor bbSBTBl 0014050 7 BUZ358 r - 3 ^ - ls May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies	OCR Scan	bb53131 BUZ358 r-31- T0218AA; T-39-13 800VC BUZ358 LDM80	PDF

Contextual Info: N AMER PHILIPS/DISCRETE ObE D PowerMOS transistor • bfc,S3^31 0014366 1 ■ BUZ11 May 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies	OCR Scan	BUZ11 BUZ11_ 00143TE T-39-11 bbS3T31 I-39-11	PDF
BUZ50B Abstract: T0220AB 2SC252 Contextual Info: N AMER PHILIPS/DISCRETE OhE D PowerMOS transistor m ” hhS3T31 001MSb3 L BUZ50B W May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies	OCR Scan	hhS3T31 001MSb3 BUZ50B bb53131 T-39-11. BUZ50B T0220AB 2SC252	PDF
sy 171 Abstract: diode sy 171 BUZ76 T0220AB Contextual Info: BUZ76 PftwprMOS transistor N AUER PHILIPS/DISCRETE OLE D • bbSBTBl 0D14M7T H m ~ T - ^ - U May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies	OCR Scan	BUZ76 0D14M7T T0220AB; byS3T31 T-39-11 sy 171 diode sy 171 BUZ76 T0220AB	PDF
BUZ24 Contextual Info: N AMER PHILIPS/DISCRETE ObE D PowerMOS transistor • bb53cl31 OOmSTfl 1 ■ - BUZ24 r-3 i-is July 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a metal envelope. This device is intended for use in Switched Mode Power Supplies	OCR Scan	bb53c BUZ24 bbS3T31 Q014bD2 T-39-13 BUZ24_ 0D14b03 BUZ24	PDF
Contextual Info: N AUER PHILIPS/DISCRETE ObE D PowerMOS transistor • bb53ci31 Oai45b3 4 ■ ” BUZ50B T'Sl' H May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies	OCR Scan	bb53c Oai45b3 BUZ50B Q0145b7 T-39-11 bbS3T31 00145bfl	PDF
BUZ24 Abstract: IEC134 Contextual Info: ObE D N AUER PHILIPS/DISCRETE ^53131 00145TÖ BUZ24 PowerMOS transistor 1 T -S i-lS July 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a metal envelope. This device is intended for use in Switched Mode Power Supplies	OCR Scan	00145T6 BUZ24 T-39-13 BUZ24 IEC134	PDF
BUZ54A Abstract: IEC134 BUZ54 Contextual Info: N AMER PHILIPS/DISCRETE übE D PowerMOS transistor " • ^53=131 0014724 S ■ BUZ54A T - 2^-/3 July 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a metal envelope. This device is intended for use in Switched Mode Power Supplies	OCR Scan	BUZ54A 7Z63885 T-39-13 BUZ54A IEC134 BUZ54	PDF
Contextual Info: PowerMOS transistor N AMER PHILIPS/DISCRETE BUZ83 ObE D • bb 53131 OOlMbfia 1 ■ r - 3 9 -!/ July 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a metal envelope. This device is intended for use in Switched Mode Power Supplies	OCR Scan	BUZ83 T-39-11 BUZ83_ bb53T31 bb53131	PDF
BUZ73AI Abstract: buz73a Contextual Info: N AMER PHILIPS/DISCRETE PowerMUS transistor QbE J> m “ ^53=131 D0144bS 4 • BUZ73A -r_ ?< May 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies	OCR Scan	D0144bS BUZ73A bbS3T31 T-39-11 BUZ73A_ aS3T31 BUZ73Ai- QD14471 BUZ73AI buz73a	PDF
Contextual Info: N AUER PHILIPS/DISCRETE ObE D • bbS3T31 0014507 S ■ PowerMOS transistor ~~ BUZ74 T -3^- 11 May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies	OCR Scan	bbS3T31 BUZ74 BUZ74_ LLSBT31 T-39-11	PDF

TRANSISTOR BUZ Search Results

TRANSISTOR BUZ Result Highlights (5)

TRANSISTOR BUZ Datasheets Context Search

BUZ34

BUZ351

BUZ54

BUZ14

buz357

MC 140 transistor

BUZ10

BUZ358

BUZ50B

sy 171

BUZ24

BUZ24

BUZ54A

BUZ73AI