AS3T31 Search Results

E 13009 2

Abstract: transistor E 13009 EB 13009 D e 13009 l p 13009 D 13009 K transistor mje EB 13009 e 13009 d transistor E 13009 l
Contextual Info: / b aS3T31 001=113? 1 DEVELOPMENT DATA This data sheet contains advance information and specifications are subject to change without notice. J N AMER PHILIPS/DISCRETE MJE 13008 MJE 13009 V ESE D T *" 3 3 - 1 3 SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed glass passivated npn power transistor in a TO-220 envelope, intended fo r use

BUZ73AI

Abstract: buz73a
Contextual Info: N AMER PHILIPS/DISCRETE PowerMUS transistor QbE J> m “ ^53=131 D0144bS 4 • BUZ73A -r_ ?< May 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies

Contextual Info: [ t ^^53= 131 DEVELOPMENT DATA Q D lflflh ? This data sheat contains advance Information and specifications are subject to change w ithout notice. _ Q A BUT131 SERIES T - 33-/3 N AUER PHILIPS/DISCRETE 5SE I> SILICON DIFFUSED POWER TRANSISTORS