TRANSISTOR BO 346 Search Results

2N3468

Contextual Info: T im es ? 2N3468 JAN,JANTX JANTXV SILICON SMALL-SIGNAL PNP TRANSISTORS PNP SWITCHING TRANSISTOR FAST SWITCHING HIGH FREQUENCY HIGH CURRENT GAIN T O -39 T O -205A D M A X IM U M R A T IN G S SY M BO L 2N 3468 U N IT S C ollecto r-E m itter V oltage VcEO 50

TRANSISTOR BO 346

Abstract: 2SK1346
Contextual Info: TOSHIBA 2SKI 346 Field Effect Transistor Industrial Applications Unit in mm Silicon N Channel MOS Type tc-MOS II High Speed, High Current DC-DC Converter, Relay Drive and Motor Drive Applications Features • 4-Volt Gate Drive • Low Drain-Source ON Resistance

2N4036

Abstract: R/ON 4037
Contextual Info: FAIRCHILD SE MI CONDUCTOR 3469674 FA IR C H ILD SEMICONDUCTOR ^ FAIRCHILD 84D 2N4036/2N4037 D • r-z? -^ PNP G eneral Purpose Transistor A Schlum berger Com pany PACKAGE 2N4036 2N4037 ABSOLUTE M AXIM UM RATINGS Note 1 Temperatures Storage Tem perature O perating Ju n ctio n Tem perature

BFG96

Abstract: V 904 RL 805 bfg96 scattering NPN transistor 2527 Transistor D 1881 transistor ITT 108 PHHI BFG32 philips MATV amplifiers
Contextual Info: PhjUj^^emiconductori bbS3T31 Q031HTH 5 53 M l A P X ^ ^ ^ ^ ^ ^ ro d u c ^ p e c ific a tio n NPN 5 GHz wideband transistor £ BFG96 N AMER PHILIPS/DISCRETE DESCRIPTION b'lE I PINNING NPN transistor in a 4-lead dual-emitter plastic SO T103 envelope. DESCRIPTION

TRANSISTOR BO 345

Abstract: TD62554S TRANSISTOR BO 346 TRANSISTOR BO 344 62554S
Contextual Info: SILICON MONOLITHIC BIPO LAR DIGITAL INTEGRATED CIRCUIT TD62551SJD62553S TD62554SJD62555S 4CH SINGLE DRIVER : C O M M O N EMITTER The TD62551S are comprised of four NPN transistor arrays. Applications include relay, hammer, lamp and display LED drivers. FEATURES

TRANSISTOR BO 346

Abstract: transistor bd 346 TRANSISTOR BO 341 OCS30 TRANSISTOR BO 345
Contextual Info: O K I electronic com ponents QCS30 Optical PNPN Switches GENERAL DESCRIPTION T he OCS3C is an optical sw itch form ed b y co m bining a G aA s in frared light em ittin g d io d e a n d a silicon P N P N elem ent th at can w ith sta n d high voltages. T he device is encased in an 8-pin plastic

Contextual Info: O K I electronic components QCS30 Optical PNPN Sw itches GENERAL DESCRIPTION The OCS3 3 is an optical switch form ed by com bining a G aA s infrared light em itting diode and a silicon P N PN element that can w ithstand high voltages. The device is encased in an 8-pin plastic

ml4861is-6

Abstract: 4046 IC circuit diagram
Contextual Info: October 1996 Micro Linear ML4861 Low Voltage Boost Regulator GENERAL DESCRIPTION FEATURES The ML4861 is a boost regulator designed for D C to DC conversion in 1 to 3 cell battery powered systems. The combination of BiCM OS process technology, internal synchronous rectification, variable frequency operation,

abzd

Abstract: ABZD SOT23-5
Contextual Info: High-Voltage, Low-Power Linear Regulator for Notebook Computers _ Features ♦ Low Cost ♦ 4V to 28V Input Range ♦ 8|iA max Quiescent Supply Current ♦ <1(jA Shutdown Supply Current ♦ 3.3V or 5V, Pin-Selectable Output

POWER SUPPLY BTS SIEMENS

Abstract: 7J40 BTS432D2 E3043 GPT051B5 Q67060-S6201-A2 siemens 3t
Contextual Info: DH flEBSbüS 00fll4fl3 S41 S IE M E N S PROFET B T S 4 3 2 D 2 Smart Highside Power Switch P ro d u ct S um m ary F eatures • Load dump and reverse battery protection1 80 Vi.oad dump • Clamp of negative voltage at output Vbb- VtouT Avalanche Clamp 58

TC7212

Abstract: binary to led display decoder
Contextual Info: TELEDYNE COMPONENTS 3 bE D ÔSlVbGS DDG7707 b TSC -T-S M “7 WTELEDYNE COMPONENTS TC7211AM TC7212AM BUS COMPATIBLE 4-DIGIT CMOS DECODER/DRIVER FEATURES GENERAL DESCRIPTION TC7211AM LCD DRIVER The TC7211AM (LCD Decoder/driver) and TC7211AM are CMOS direct drive, 4-digit, 7-segment display decoder

Contextual Info: AVANTE< INC EOE D • 0A V A K TEK 1 1 4 1 1 fab 0G0h4afe, T AT-42010 Up to 6 GHz Medium Power Silicon Bipolar Transistor Avantek 100 mil Package Features • • High Output Power: 12.0 dBm typical Pi dB at 2.0 GHz 20.5 dBm typical Pi dB at 4.0 GHz High Gain at 1 dB Compression:

2SB525

Abstract: transistor 2SB525 2Sd326 2SA707 2SA723 2SB510 2SB514 2SB515
Contextual Info: 5 - - FOR USE BY ELECTRICIANS OVERSEAS : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English

2sC1651 transistor

Abstract: 2SC1651 TRANSISTOR BO 346
Contextual Info: MQE ]> ROHM CO LTD B TflEflW D Q O S m M 1 •RHM h 7 > y ^ $ /Transistors 2SC1651 1 = 2 7 -0 ^ H 2 S C 1 6 5 1 il£ ;3 i7 0u - ^ - ^ N P N ' > U 3 > N 7 > 5 / 7 ^ is iiiS ^ J E i^ iiffl/ H ig h Voltage Amp. Triple Diffusied NPN Silicon Transistor • ^ J fiv fjiS / D im e n s io n s Unit: mm

transistor EP 430

Abstract: 2SC332 150me
Contextual Info: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English

Contextual Info: f f j H A R R IS S E M I C O N D U C T O R REGISTRATION PENDING Currently Available as FRK9160 D, R, H 2N7328D, 2N7328R 2N7328H Radiation Hardened P-Channel Power MOSFETs December 1992 Package Features • 40A, -100V, RDS(on)« 0.0850 TO-2Q4AE • Second Generation Rad Hard MOSFET Results From New Design Concept*

s band POWER TRANSISTOR 2.7 3.1 3.5 GHZ

Abstract: AVANTEK transistor AT01670 Avantek amplifier 167 AVANTEK AT016 Avantek S Avantek UA-152
Contextual Info: AVANTEK INC 2QE D AVANTEK i m n b t a AT-01670 Up to 4 GHz General Purpose Silicon Bipolar Transistor Avantek 70 mil Package Features • • • • OGObMSM 22.0 dBm typical Pi dB at 2.0 GHz 10.5 dB typical Gi dB at 2.0 GHz High Galn-Bandwidth Product: 7.0 GHz typical fr

2am TRANSISTOR

Contextual Info: f Z 7 S Ä 7# G S - T IR H O M S O N Liera ®® B C X 19 SMALL SIGNAL NPN TRANSISTOR Type Marking BCX19 U1 . SILICON EPITAXIAL PLANAR NPN TRANSISTORS • MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS . MEDIUM CURRENT AF AMPLIFICATION

2SA800

Abstract: NE59300 NE59335 ci 4081 NE AND micro-X NE593 NE59312 NE59333 NE734 C-48Hrs
Contextual Info: N E C / DE bMS7414 30 C A L IF O R N IA 64 27 41 4 N E C/ CAL IFO RNIA DODQISB 0 |~~ 30C 00 15 3 07^3/-/*^ MICROWAVE TRANSISTOR SERIES FEATURES DESCRIPTION AND APPLICATIONS T he N E 5 9 3 Series of PNP silicon general purpose U H F tran­ sistors provide the designer w ith a wide selection of reliable

NE644

Abstract: 2SC2272 NE64400 NE64408 NE64480 NEC Microwave Semiconductors
Contextual Info: ‘N E C/ ~ • CALIFORNIA 6427414 N t L/ 3D LA LiruKiM i* D F|b 4 2 7 4 m □□□□lb3 30C 00163 3 |~ D “p MICROWAVE TRANSISTOR SERIES NE644 FEATURES DESCRIPTION AND APPLICATIONS • LOW NOISE F I G U R E 2.7 dB at 4.0 GHz T he N E 6 4 4 is the latest series of NPN silicon transistors

Contextual Info: Transistors Digital transistors built-in resistors DTA143XE/DTA143XU A/DTA143XKA/DTA143XSA •F e a tu re s 1) ^E xternal d im e n s io n s (U nits: m m ) B u ilt- in b ia s r e s is to r s e n a b le th e c o n fig u ra tio n o f an in v e rte r c irc u it

68HCXX

Abstract: MAX6326UR MAX6326 MAX6326UR29-T MAX6326UR31-T MAX6327 MAX6328
Contextual Info: 19-1294; Rev 0; 10/97 3-Pin, Ultra-Low-Power µP Reset Circuits _Features ♦ Ultra-Low 1µA max Supply Current These circuits perform a single function: they assert a reset signal whenever the VCC supply voltage declines below a preset threshold, keeping it asserted for at

TRIAC BT 812

Abstract: induction cooker schematic diagram schematic diagram inverter 2000w anti parallel scr firing circuit 2kw TRIAC dimmer control Power Semiconductor Applications Philips Semiconductors "Power Semiconductor Applications" Philips construct and test a mosfet based pwm chopper circuit free philips igbt induction cooker BT151 motor speed control
Contextual Info: Thyristors and Triacs Power Semiconductor Applications Philips Semiconductors CHAPTER 6 Power Control with Thyristors and Triacs 6.1 Using Thyristors and Triacs 6.2 Thyristor and Triac Applications 6.3 Hi-Com Triacs 485 Thyristors and Triacs Power Semiconductor Applications

Germanium drift transistor

Abstract: 2N4895 germanium transistor epitaxial mesa transistor sec tip31A halbleiter index transistor transistor BD222 BD699 EQUIVALENT kd 2060 transistor
Contextual Info: POWER DATA BOOK FAIRCHILD 464 Ellis Street, Mountain View, California 94042 1976 Fairchild Camera and Instrum ent C orporation/464 Ellis Street, M ountain View, California 940 4 2 / 4 15 9 6 2 -5 0 1 1/TW X 910 -3 7 9-6 4 3 5 INTRODUCTION You, the customer, and your needs have dictated the form at and contents of