TRANSISTOR BO 346 Search Results

2N3468

Contextual Info: T im es ? 2N3468 JAN,JANTX JANTXV SILICON SMALL-SIGNAL PNP TRANSISTORS PNP SWITCHING TRANSISTOR FAST SWITCHING HIGH FREQUENCY HIGH CURRENT GAIN T O -39 T O -205A D M A X IM U M R A T IN G S SY M BO L 2N 3468 U N IT S C ollecto r-E m itter V oltage VcEO 50

TRANSISTOR BO 346

Abstract: 2SK1346
Contextual Info: TOSHIBA 2SKI 346 Field Effect Transistor Industrial Applications Unit in mm Silicon N Channel MOS Type tc-MOS II High Speed, High Current DC-DC Converter, Relay Drive and Motor Drive Applications Features • 4-Volt Gate Drive • Low Drain-Source ON Resistance

2N4036

Abstract: R/ON 4037
Contextual Info: FAIRCHILD SE MI CONDUCTOR 3469674 FA IR C H ILD SEMICONDUCTOR ^ FAIRCHILD 84D 2N4036/2N4037 D • r-z? -^ PNP G eneral Purpose Transistor A Schlum berger Com pany PACKAGE 2N4036 2N4037 ABSOLUTE M AXIM UM RATINGS Note 1 Temperatures Storage Tem perature O perating Ju n ctio n Tem perature

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Quad M em ory Driver Transistor M PQ 3467 PNP Silicon Motorola Preferred Device fui nil ran nn bòi iti rri LAI TjtaX PNP rv n lina l í i t ü rv n ili ili l ìj MAXIM UM RATINGS Rating Symbol Value Unit Vdc Collector- Emitter Voltage

ZTX752 equivalent

Abstract: transistor 42-10a data BC369 FXTA92 BSS98
Contextual Info: B o ok 1 Through Hole Com ponents Table of Contents Section Introduction 1 Selection Guide 2 Datasheets 3 Package Outline Dimensions 4 Tape and Reel Specifications 5 Surface Mount Alternatives 6 Alphanumeric Index 7 Book 2 Surface Mount Components - Available on Request

a 103g

Abstract: a103g
Contextual Info: TRANSISTOR ARRAY UPA103G CONNECTION DIAGRAM FEATURES Top View FIVE MONOLITHIC 9 GHz tr TRANSISTORS: UPA103G T w o o f th e se use a com m o n em itter pin and can be used as diffe re ntia l am plifiers OUTSTANDING hFE 14 13 12 11 10 LINEARITY SMALL PACKAGE

Contextual Info: PRELIMINARY DATA SHEET NPN SILICON HIGH FREQUENCY TRANSISTOR UPA812T OUTLINE DIMENSIONS Units in mm FEATURES SMALL PACKAGE STYLE: 2 NE681 Die in a 2 mm x 1.25 mm package PACKAGE OUTLINE S06 (Top View) LOW NOISE FIGURE: NF = 1.4 dB TYP at 1 GHz HIGH GAIN:

BFG96

Abstract: V 904 RL 805 bfg96 scattering NPN transistor 2527 Transistor D 1881 transistor ITT 108 PHHI BFG32 philips MATV amplifiers
Contextual Info: PhjUj^^emiconductori bbS3T31 Q031HTH 5 53 M l A P X ^ ^ ^ ^ ^ ^ ro d u c ^ p e c ific a tio n NPN 5 GHz wideband transistor £ BFG96 N AMER PHILIPS/DISCRETE DESCRIPTION b'lE I PINNING NPN transistor in a 4-lead dual-emitter plastic SO T103 envelope. DESCRIPTION

TRANSISTOR BO 345

Abstract: TD62554S TRANSISTOR BO 346 TRANSISTOR BO 344 62554S
Contextual Info: SILICON MONOLITHIC BIPO LAR DIGITAL INTEGRATED CIRCUIT TD62551SJD62553S TD62554SJD62555S 4CH SINGLE DRIVER : C O M M O N EMITTER The TD62551S are comprised of four NPN transistor arrays. Applications include relay, hammer, lamp and display LED drivers. FEATURES

Contextual Info: SIEMENS BUZ 346 S2 Not for new design SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 346 S2 Vbs 60 V b ^DS on Package Ordering Code 58 A 0.018 n TO-218AA C67078-S3120-A4 Maximum Ratings Parameter Symbol Continuous drain current

TRANSISTOR BO 346

Abstract: transistor bd 346 TRANSISTOR BO 341 OCS30 TRANSISTOR BO 345
Contextual Info: O K I electronic com ponents QCS30 Optical PNPN Switches GENERAL DESCRIPTION T he OCS3C is an optical sw itch form ed b y co m bining a G aA s in frared light em ittin g d io d e a n d a silicon P N P N elem ent th at can w ith sta n d high voltages. T he device is encased in an 8-pin plastic

TRANSISTOR BO 346

Abstract: 2SD2008 2SB1332
Contextual Info: 2SB1332 h ~p > v 7 $ / I ransistors 2SB1332 X t 0^ d r ' > ^ U 7 V - ^ P N P > V =]> b 7 > y ' Z $ Epitaxial Planar PNP Silicon Transistor H ffl/L o w Freq. Power Amp. • ÿi-firfîiH /D im e n s io n s Unit : mm 1) *m >fcT'£>-5o V C E O ^- 80V, lc = —1A

BUK202-S0Y

Contextual Info: Philips Semiconductors Product specification PowerMOS transistor BUK202-S0Y TOPFET high side switch_ DESCRIPTION Monolithic temperature and overload protected power switch based on MOSFET technology in a 5 pin plastic envelope, configured

Contextual Info: O K I electronic components QCS30 Optical PNPN Sw itches GENERAL DESCRIPTION The OCS3 3 is an optical switch form ed by com bining a G aA s infrared light em itting diode and a silicon P N PN element that can w ithstand high voltages. The device is encased in an 8-pin plastic

ml4861is-6

Abstract: 4046 IC circuit diagram
Contextual Info: October 1996 Micro Linear ML4861 Low Voltage Boost Regulator GENERAL DESCRIPTION FEATURES The ML4861 is a boost regulator designed for D C to DC conversion in 1 to 3 cell battery powered systems. The combination of BiCM OS process technology, internal synchronous rectification, variable frequency operation,

Contextual Info: PRELIMINARY DATA SHEET NPN SILICON TRANSISTOR NE681M03 OUTLINE DIMENSIONS Units in mm FEATURES PACKAGE OUTLINE M03 NEW M03 PACKAGE: • S m allest tra n sisto r o u tlin e pa ckag e ava ila ble • Low pro file /0 .5 9 mm package height • Flat lead style fo r be tte r RF p e rfo rm an ce

61089b

Abstract: TH3 thermistor TH5 thermistor TRANSISTOR BO 344 OverCurrent Protector TRANSISTOR BO 346 79R241 GR-1089-CORE JESD51-2 TISP61089B
Contextual Info: TISP61089B DUAL FORWARD-CONDUCTING P-GATE THYRISTORS PROGRAMMABLE OVERVOLTAGE PROTECTORS TISP61089B High Voltage Ringing SLIC Protector Dual Voltage-Programmable Protectors - Supports Battery Voltages Down to -155 V - Low 5 mA max. Gate Triggering Current

Contextual Info: TRANSISTOR ARRAY UPA101G CONNECTION DIAGRAM FEATURES Top View BUILT-IN ULTRAHIGH FREQUENCY MULTIPLIER: (9 G H z S in gle T ransisto rs) UPA101G OUTSTANDING 7 hFE LINEARITY SMALL PACKAGE _ 1 TAPE AND REEL PACKAGING OPTION AVAILABLE 6 _ 1 1-

abzd

Abstract: ABZD SOT23-5
Contextual Info: High-Voltage, Low-Power Linear Regulator for Notebook Computers _ Features ♦ Low Cost ♦ 4V to 28V Input Range ♦ 8|iA max Quiescent Supply Current ♦ <1(jA Shutdown Supply Current ♦ 3.3V or 5V, Pin-Selectable Output

POWER SUPPLY BTS SIEMENS

Abstract: 7J40 BTS432D2 E3043 GPT051B5 Q67060-S6201-A2 siemens 3t
Contextual Info: DH flEBSbüS 00fll4fl3 S41 S IE M E N S PROFET B T S 4 3 2 D 2 Smart Highside Power Switch P ro d u ct S um m ary F eatures • Load dump and reverse battery protection1 80 Vi.oad dump • Clamp of negative voltage at output Vbb- VtouT Avalanche Clamp 58

BSX19 equivalent

Abstract: BC350 bc107 BFW63 bcw17 SHORT DATA ON 2N744 transistor BC287 2N3020 BC451 2N2868
Contextual Info: TABLE OF CONTENTS INTRODUCTION ALPHANUMERICAL INDEX PRODUCT GUIDE SELECTION GUIDE CROSS REFERENCE HANDLING PRECAUTION QUALITY SURFACE MOUNTING CASE: SOT-23 DATASHEETS PACKAGES Page 4 5 7 9 14 24 25 30 35 419 INTRODUCTION This databook contains datasheets covering the range of discrete devices for small

TC7212

Abstract: binary to led display decoder
Contextual Info: TELEDYNE COMPONENTS 3 bE D ÔSlVbGS DDG7707 b TSC -T-S M “7 WTELEDYNE COMPONENTS TC7211AM TC7212AM BUS COMPATIBLE 4-DIGIT CMOS DECODER/DRIVER FEATURES GENERAL DESCRIPTION TC7211AM LCD DRIVER The TC7211AM (LCD Decoder/driver) and TC7211AM are CMOS direct drive, 4-digit, 7-segment display decoder

1316c

Abstract: nec uPC 1316c PC1316C c1316c mpc1316c uPC1316C 36CW transistor P1 P nec 1316c nec+1316c
Contextual Info: BIPOLAR ANALOG INTEGRATED CIRCUIT / / P C I 316 C DUAL AUDIO POWER AMPLIFIER D E SC R IPTIO N The ¿ PC1316C is a dual audio pow er a m p lifie r in a 14-lead dual in line plastic package, and designed fo r portable audio sets. F E A TU R E S Wide operating voltage range. V c c = 3 t o 1 6 V

IAO5 Sharp

Abstract: free transistor equivalent book 2sc siemens transistor asy 27 Diode BAY 61 TRANSISTOR BJ 131-6 tesla typ 202 thyristor Tesla z1072 HALL EFFECT 21E z1071
Contextual Info: SIEM EN S Semiconductor Manual Discrete Industrial Types 1974 ACY 23, ACY 32 PNP Transistors for AF pre-stages The ACY 23 and ACY 32 are alloyed germanium PNP transistors in the case 1 A 3 DIN 41871 sim. TO -1 . The leads are electrically insulated from the case. The