TRANSISTOR BC 185 Search Results

wabash relay

Abstract: 1820-3145 1826-0346 Rohm op amp tkf 28 1826-0180 Caddell-Burns Manufacturing e1420 5053HD619K0F GRM3195C1H102JD01D
Contextual Info: Agilent E1420B Component Level Information E1420B Universal Counter Component Level Information Information in this packet applies to the following assemblies: 1. E1420-68006 PC Assembly VXI Assembly 2. 53310-60008 PC Assembly (Input Board) The following is included in this packet:

3866S

Abstract: BF247 equivalent brochage des circuits integres Triac GK transistor bc 564 BC547E TI Small Signal FET Catalogue bcw 91 transistor SESCO SESCOSEM
Contextual Info: GENERAL INFORMATION , , v^ INFORMATION GENERALE ” ; V Index Index 3 ' v.»A* K \ a 1 Selection guide Guide de sélection Qualified devices Dispositifs homologués Quality Qualité Symbols Symboles DATA SHEETS NOTICES SILICON SIGNAL TRANSISTORS TRANSISTORS DE SIGNAL AU SILICIUM

transistor vergleichsliste

Abstract: Transistor Vergleichsliste DDR telefunken transistoren VALVO BSW69 vergleichsliste DDR vergleichsliste transistor BC-148 rft transistoren Transistoren DDR
Contextual Info: TRANSISTOR VERGLEICHSLISTE Teil 2: Siliziumtransistoren r a d io - t e le v is io n Transistorverglèich& liste T eil 2 : S iliziu in tra n sistoren TRA N SISTO R, V ER G LEICH S LIS T E Teil 2: Siliziumtransistoren DER D EU TSCH EN M IL IT Ä R V E R L A G

bc 540

Abstract: TRANSISTOR BC 137 TRANSISTOR BC 187 transistor Bc 540 TRANSISTOR BC 136 bc 207 npn BC 677 bsv57b TRANSISTOR BD 187 BD 139 N
Contextual Info: Power transistors for horizontal deflection output circuits Type Structure Fig. Nr. Characteristics Maximum ratings ptot at 'case = +90°c 7c :a v W A fj Notes at ^ CERM V M Hz rc mA ^ CEsat a / q and " F E V A BU 204 NPN 25 10.0 2.5 1300 7.5 100 S5 2.0 2.0

isl 6251 schematic

Abstract: smd transistor A4S Siemens OFW 361 smd marking b4h 6Bs smd transistor NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG Transistors Diodes smd A7H a4s smd transistor npn transistor ss100 smd transistor 6Bs
Contextual Info: SIEMENS Halbleiter-Datenblätter Im Produktbereich „Halbleiter“ konnten uns leider von SIEMENS nicht alle Daten rechtzeitig zur Verfügung gestellt werden. Wir werden uns bemühen, die Auswahl an Datenblättern dieses Bereichs für die nächste Ausgabe dieser CD zu vervollständigen.

2907A PNP bipolar transistors

Abstract: BC 148 TRANSISTOR DATASHEET TRANSISTOR BC 450 pnp diode S6 78A transistors bf 517 BFG sot89 BC 327 SOT 23 BAS20 SOT23 DIODE TA 70/04 bcp 846
Contextual Info: Selection Guide RF-Transistors and MMICs MOS Field-Effect Transistors. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Dual-Gate GaAs FETs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

S4 78a DIODE schottky

Abstract: diode S6 78A BC 148 TRANSISTOR DATASHEET transistors BC 543 TRANSISTOR BC 158 BC 158 is npn or pnp 68W npn TRANSISTOR BC s6 78a baw 92
Contextual Info: Selection Guide Table of Contents Page RF-Transistors and MMICs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 MOS Field-Effect Transistors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

Transistor BF 479

Abstract: BF479 Transistor BF 479 t BF479T transistor Bc 542 BF transistor transistor marking code AL marking IAM transistor sot-23 fll500q BF 500 transistor
Contextual Info: TELEFUNKEN ELECTRONIC » » - v Ô1 C D • fi^aOD^b 000520 «} ? T ~ ' z t - 5 ^ BF 479 T • (S 479 T TULKFQJIIMIIN] electronic Marked with: BF 479 T Creative Technologies Silicon PNP RF Transistor Applications; UHF/VHF high current input and mixer stages

2907A PNP bipolar transistors

Abstract: diode S6 78A MMIC SOT 363 s1140 DIODE TA 70/04 2907A PNP bipolar transistors datasheet Diode BAW 62 TRANSISTOR BC 158 baw 92 68W SOT
Contextual Info: Selection Guide Table of Contents Page RF-Transistors and MMICs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 MOS Field-Effect Transistors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

TRANSISTOR BC 413

Abstract: MC1019 MC1219
Contextual Info: I FULL AD D ERS \ MECL 11 MC1000/1200 series MC1019 MC1219 Provides the SUM , SUM , C A R R Y , and C A R R Y functions while requiring only A U G E N D iA and A D D E N D B) inputs with C A R R Y IN and C A R R Y IN. P O S IT IV E L O G IC TRUTH TABLE

bpx28

Abstract: Germanium diode OA 182 TAA920 fy sot 143 BSV57B AC187K BPW14 BF194 AD 161 BPX34
Contextual Info: Halbleiter TELE FUN KEN Übersicht Sem iconductor survey 1972/1973 B2/V.3.20/0872 D ie s e Liste soll die W ahl g ee ig n e te r H albleiter-Typen fü r die verschiedenen A n w en du ng szw ecke e rleich te rn . Z ur besseren Ü b e rs ic h t sind nur die w e se ntlich en D aten

AC125K

Abstract: 6AN7 tungsram 3S035T-1 ecc83 application notes ECL86 DG 7-123 tungsram AC125UZ PENTODE pl 508 ot-400 tungsram
Contextual Info: TUNGSRAM 1 ELECTRON TUBES AND SEMI­ CONDUCTORS 1979 RADIO & TV RECEIVING TUBES OSCILLOSCOPE & MONITOR TUBES TRANSMITTING TUBES, RECTIFIERS & MICROWAVE TUBES SEMICONDUCTORS RECEIVING TUBES CONSUMER TYPES INDUSTRIAL TYPES VOLTAGE REGULATORS TY P E ASSO R TM EN T

BCM 4336

Abstract: 2A0565 C2335 2A280Z C1740 bipolar transistor transistor A1267 a1273 transistor c2335 r 2B0565 2b265
Contextual Info: 01.07.2005 11:10 Uhr Seite 2 Shor t Form Catalog for Distribution 2005/06 w w w. i n f i n e o n . c o m / d i s t r i b u t i o n Published by Infineon Technologies AG Ordering No. B192-H6780-G9-X-7600 Printed in Germany LM 060550. Shor t Form Catalog Distribution 2005/06

HBF4727A

Abstract: ZD 607 - triac ZD 607 - triac circuit hbf 4727a TDA3310 hbf4727 HBF4740 DTL-930 7-stage frequency divider BF479S
Contextual Info: / h o f t f o f m A T E ^SEMICONDUCTOR “ PRODUCTS 1979/80 I NT RODUCTI ON This publication aims to provide condensed information on the vast range of standard devices currently produced by SGS-ATES. For easy consultation the products have been divided into several sections according to the main product

C495 transistor

Abstract: c638 transistor EQUIVALENT TRANSISTOR bc108 C756 TRANSISTOR PNP Transistor 2N2222 equivalent C735 transistor c637 transistor transistor c495 TRANSISTOR bc107 current gain c372 transistor
Contextual Info: Metal Can Metal Can Product Variations Low Level General Purpose Am plifiers TO-5, TO-39 and TO-18 can be supplied with several variations from standard. Device Type Lead Length The standard lead length is 12,7mm 0,5in . Certain types are available with longer leads— 38,1mm (1,5in) at a small extra

4046 application note philips

Abstract: transistor 6822 TRANSISTOR NPN 6822 41413 transistor d 1556 1FT sot23-6 805 399-4 International Power Sources marking 683 choke IEC134
Contextual Info: Product specification Philips Semiconductors NPN silicon planar epitaxial microwave power transistor PHILIPS INTERNATIONAL LEE1015TA 7 iio a 2 b SbE oa4bnG t5t « p h i n DESCRIPTION APPLICATIO N S Diffused emitter ballasting resistors providing excellent

transistor BC 568

Abstract: transistor horizontal c 5802 transistor BC 388 bc 2878 transistor 275 v 593 BC 1325
Contextual Info: FPD3000SOT89 Datasheet v2.1 LOW NOISE HIGH LINEARITY PACKAGED PHEMT PACKAGE: FEATURES 1850MHZ : • • • • • • RoHS 30 dBm Output Power (P1dB) 13 dB Small-Signal Gain (SSG) 1.3 dB Noise Figure 45 dBm Output IP3 45% Power-Added Efficiency FPD3000SOT89E: RoHS compliant

transistor BC 549

Contextual Info: TWL6032 SWCS076 – DECEMBER 2011 www.ti.com Fully Integrated Power Management with Power Path and Battery Charger FEATURES 1 • • • • • • • • • • Five highly efficient buck converters – One 3 MHz, 0.6 to 2.1 V @ 5.0 A, DVS-capable – One 6 MHz, 0.6 to 2.1 V @ 2.5 A,

transistor BC 945

Abstract: BC 945 transistor sga-9189
Contextual Info: Preliminary Preliminary Product Description Stanford Microdevices’ SGA-9189 is a high performance amplifier designed for operation from DC to 3500 MHz. With optimal matching at 2 GHz, TOI=39 dBm and P1dB=26 dBm. This RF device uses the latest Silicon Germanium

nsc800

Abstract: NSC800 cpu ED6A TRANSISTOR BC 748 ED52 mtA srl nsc810 Z80A dma 3337A nsc831
Contextual Info: NSC800 National á u tSemiconductor NSC800 High-Performance Low-Power CMOS Microprocessor General Description Features The NSC800 is an 8-bit CMOS microprocessor that func­ tions as the central processing unit CPU in National Semi­ conductor’s NSC800 microcomputer family. National’s

c 5171

Abstract: nsc800 ed68 nsc831 Z80 CPU PHYSICAL DIMENSIONS LCC NSC800-3 NSC800 cpu ED69 TRANSISTOR BC 560 Making ED4A
Contextual Info: NSC800 TM High-Performance Low-Power CMOS Microprocessor General Description Features The NSC800 is an 8-bit CMOS microprocessor that functions as the central processing unit CPU in National Semiconductor’s NSC800 microcomputer family National’s microCMOS technology used to fabricate this device provides system designers with performance equivalent to

ed68

Abstract: NSC800 c 5171 ED6A NSC800 cpu mm58167 CB2E ed62 ED78 nsc800 family
Contextual Info: NSC800 TM High-Performance Low-Power CMOS Microprocessor General Description Features The NSC800 is an 8-bit CMOS microprocessor that functions as the central processing unit CPU in National Semiconductor’s NSC800 microcomputer family National’s microCMOS technology used to fabricate this device provides system designers with performance equivalent to

Contextual Info: T R I T Q Q U I S li n T S E M I C O N D U C T O R , I N C TQ7641 3V PCS-1900 Power Amplifier 1C Features • • • • • • Product Description T h e T Q 7 6 4 1 is a h i g h - e f f ic ie n c y p o w e r a m p lif ie r d e v e lo p e d f o r P C S - 1 9 0 0

TQ7641

Contextual Info: S E M I C O N D U C T O R , I N C TQ7641 3V PCS-1900 Power Am plifier 1C Features • 314 single supply • High efficiency • 32 dBm output power • Low harmonics • Power TSSQP-20 plastic package • 50-ohm matched input Product Description The TQ7641 is a high-efficiency power am plifier developed fo r PCS-1900