TRANSISTOR B43 Search Results

BUK444-500B

Abstract: transistor BUK444-500B transistor npc 231
Contextual Info: N AUER PHILIPS/DISCRETE b^E » • bbSB'iBl D03D535 b43 « A P X Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in

Contextual Info: TRANSISTOR MODULES QCA200BA60 UL;E76102 M) is a dual Darlington power transistor module which has series-connected ULTRA HIGH hFE, high speed, high power Darlington transistors. Each transistor has a reverse paral­ leled fast recovery diode ( t r r : 2 0 0 n s ). The mounting base of the

Contextual Info: N AUER PHILIPS/DISCRETE b'lE » bbSa'ni QQS^bHl OHS BLX95 IAPX A U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended fo r transmitting applications in class-A, B or C in the u.h.f. frequency range fo r supply voltages up to 28 V. The transistor is resistance stabilized and is

typ71

Abstract: 71ti 71ti philips BLY91C RF POWER TRANSISTOR NPN vhf Transistor 5331
Contextual Info: N AMER PHILIPS/DISCRETE bSE D WË bbSSTSl □□21714 TTfl • APX BLY91C A V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated h.f. and v.h.f. transmitters with a nominal supply voltage of 28 V. The transistor is resistance stabilized and is guaran­

BLY88C

Abstract: lyp 809 BLY88 SOT122A TRANSISTOR 2X5
Contextual Info: 711005b DQbBSÔT TIS « P H I N bSE D BLY88C/01 PHILIPS INTERNATIONAL V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor fo r use in class-A, B and C operated mobile, industrial and m ilitary transmitters w ith a supply voltage o f 13,5 V . The transistor is resistance stabilized and is

transistor B43

Abstract: BUK454-600B T0220AB
Contextual Info: bSE D PHILIPS INTERNATIONAL B TllOaSb OObHObb 67D • PHIN Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in

2N2222A 338

Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
Contextual Info: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK

Philips FA 564

Contextual Info: Philips Semiconductors Product specification PNP 4 GHz wideband transistor BFT93W FEATURES DESCRIPTION • High power gain Silicon PNP transistor in a plastic, SOT323 S-mini package. The BFT93W uses the same crystal as the SOT23 version, BFT93. • Gold metallization ensures

Contextual Info: N AMER PHILIPS/DISCRETE b=JE D bbS3T31 OGSfllHD 7D7 I IAPX 2N3904 SILICON PLANAR EPITAXIAL TRANSISTOR NPN transistor in a plastic TO-92 envelope, primarily intended for high-speed, saturated switching applications fo r industrial service. PNP complement is 2N3906.

100-P

Abstract: BUK454-600B T0220AB
Contextual Info: bSE D PHILIPS INTERNATIONAL B TllDöSb OObHObb Ö7D « P H I N Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in

NTE74C373

Abstract: NTE74HC299 NTE74LS327 NTE74LS299 NTE74HC373
Contextual Info: INTEGRATED CIRCUITS - TTL TRANSISTOR TRANSISTOR LOGIC NTE74HC299, 20-Lead DIP, See Diag. 294 NTE74LS299 8-Bit Shift Register w/3-State Outputs so ri d et NTE74LS327 14-Lead DIP, See Diag. 247 Dual Voltage Controlled Oscillator NTE74LS352 16-Lead DI P, See Diag. 249

NTE7426

Abstract: NTE7432 NTE74LS32 NTE7438 NTE7441 NTE74C30 NTE7427 NTE7440 NTE74HC32 nte7437
Contextual Info: INTEGRATED CIRCUITS - TTL TRANSISTOR TRANSISTOR LOGIC NTE7425 14-Lead DIP, See Diag. 247 Dual 4—Input Positive NOR Gate w/Strobe NTE7426, 14-Lead DIP, See Diag. 247 NTE74LS26 Quad 2-Input High Voltage Interface NAND Gate 1A ^ V^ ~ 1B 3 B Q Vcc 1a g Q 4B

NTE7411

Abstract: NTE74LS123 NTE74LS113 NTE74123 nte74s124 NTE74121 NTE74LS11 TRANSISTOR D 1266 NTE74HC125 NTE74120
Contextual Info: INTEGRATED CIRCUITS - TTL TRANSISTOR TRANSISTOR LOGIC NTE74110 14-Lead DIP, See Diag. 247 AND Gated J -K Master/Slave Flip-Flop "/D ata Lockout NTE74111 16-Lead DIP, See Diag. 249 Dual J -K Flip-Flop Master/Slave "/D ata Lockout 1K r i 1 CLR § 3 1Q | ¡3

74LS324

Abstract: 7400 TTL 74LS327 7402, 7404, 7408, 7432, 7400 80C96 74251 multiplexer 74C923 equivalent Flip-Flop 7473 74LS324 equivalent 74C08 equivalent
Contextual Info: N T E ELECTRONICS INC 17E H ^3125=1 G0G513S Q B - o S V. ! - TRANSISTOR-TRANSISTOR LOGIC INCLUDES SERIES 74C CMOS NTE TYPE NO. •DESCRIPTION . 7214 7400 74C00 74H00 74LS00 74S00 3-State Sel/Mlpx Quad 2-Input Pos Quad 2-Input Pos Quad 2-Input Pos Quad 2-Input Pos

AT-60500

Abstract: AT60500 Hewlett-Packard AT60500
Contextual Info: HEWLETT-PACKARD/ CMPNTS blE ThH% HEW LETT 1"KM PACKARD M 4 4 ? S a 4 DDD' i f l Sa AT-60500 Up to 6 GHz Low Noise Silicon Bipolar Transistor Chip D Chip Outline1 Features • • • • b43 Low Bias Current Operation Low Noise Figure: 1.8 dB typical at 2.0 GHz

La 7676

Abstract: La 7676 data sheet marking b42 TC-2353 transistor B42 2SB1475 B44 transistor marking B44 marking B43 TRANSISTOR
Contextual Info: DATA SHEET SILICON TRANSISTOR ELECTRON DEVICE 2SB1475 PIMP SILICON EPITAXIALTRANSISTOR AUDIO FREQUENCY AMPLIFIER DESCRIPTION 2SB1475 is designed fo r audio frequency amplifier and switching application, especially in VCR cameras and headphone stereos. FEATURES

B81121 X2 mkt

Abstract: B81121 X2 mkp AN-TDA16888-0-010323 ELKO capacitors MKT .22K 250V X2 EPCOS 230 00 O ELKO CAPACITOR 63v 2,2 elko capacitor TDA 16888 B81121 X2
Contextual Info: Version 1.1 , March 2001 Application Note AN-TDA16888-0-010323 TDA 16888: Multioutput Single Transistor Forward Converter 150W / 100kHz Author: Michael Herfurth Published by Infineon Technologies AG http://www.infineon.com Power Management & Supply N e v e r

Contextual Info: Features RS2 Series • Compatible with TTL Gates • Push-on connector terminals • Mounts on a T03 transistor heat sink Printed Circuit Board Mountable Solid State Relay-7 Amp D37 -mm Input Specifications Control Voltage: RS2-1D7-33 . 5VDC

2SK2228

Abstract: Transistor 3202 1 A 60
Contextual Info: TO SH IBA SDOSSO T05H IBA FIELD EFFECT TRANSISTOR 2SK2228 QQE33Ô3 447 SILICON N CHANNEL M OS TYPE L2-tt-MOSIV 2SK2228 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. CHOPPER REGULATOR, DC-DC CONVERTER AND M OTOR DRIVE INDUSTRIAL APPLICATIONS Unit in mm

transistor 2N4

Abstract: ST25C transistor 2N407 transistor 2SA114 TFK 808 transistor 2sc124 SF1222 GE2 TRANSISTOR TFK 877 TFK 748
Contextual Info: $ 1.50 2 -H 2 1 $ % Cat. No. SSH-5 ^TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York i FIFTH EDITION FIRST PRINTING — JANUARY, 1964 FIRST EDITION

marking eb5

Abstract: diode marking eb5 BSZ440N10NS3 i95B DS 654 5C
Contextual Info: BSZ440N10NS3 G "%&$!"# 3 Power-Transistor Product Summary Features V 9H J Q . 5BI <? G 71D 5 3 81B 75 6? B8978 6B5AE5>3 I 1@@<931D9 ? >C R 9H"[Z#$YMd , Y" Q ( @D9=9J54 6? B43 43 3 ? >F5BC9? > I9 )0 6 Q ' 3 81>>5< >? B=1<<5F5< E=%IH9HDC%0 Q  H3 5<<5>D71D5 3 81B75 HR 9H"[Z# @B? 4E3 D ( & 

transistor B42

Abstract: smd transistor b44 b42 smd transistor B42 350 MARKING SMD PNP TRANSISTOR 2a B44 transistor marking b42 marking B44 b42 transistor B43 marking
Contextual Info: Transistors IC SMD Type PNP Silicon Epitaxial Transistor 2SB1475 Features Super miniature package. High DC current IC DC =500mA max. Low VCE(sat): VCE(sat)=-60mV at -100mA 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating

BU506

Abstract: BU506D specification of curve tracer 0Q7745H semiconductors AL3M
Contextual Info: Philips Semiconductors Product specification Silicon diffused power transistors BU506; BU506D High-voltage, high-speed switching npn transistor in a plastic envelope intended fo r use in horizontal deflection circuits o f colour television receivers and fo r line operated switch-mode applications.

Contextual Info: ^ Philips Components Data sheet status Prelim inary specification date of issue March 1991 P H I L IP S N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies