TRANSISTOR A31 Search Results

diode RU 3AM

Abstract: diode RU 4B RG-2A Diode diode RU 4AM MN638S FMM-32 SPF0001 red green green zener diode Diode RJ 4B sta464c
Contextual Info: Index by Part No. Part No. 130 Classification Page Part No. Classification Page 2SA1488 Power transistor 66 ATS611LSB Hall-Effect IC Subassembly 2SA1488A Power transistor 66 ATS612LSB Hall-Effect IC (Subassembly) 2SA1567 Power transistor 67 AU01 Fast-Recovery Rectifier Diode (Axial)

2SA1964

Abstract: 2SC5248 catalogue de transistor data book transistors 2SA SPEC-A315 VCEO160V
Contextual Info: 2SA1964 2SC5248 Transistors High-voltage Switching Audio output am plifier transistor, Stabilized power supply transistor 2SA1964 # F e a tu re s 1 ) Flal DC current gain characteristics. 2 ) High breakdown voltage. ( B V ceo = — 1 6 0 V ) 3 ) High fr. (Typ.150M H z)

alu 74181

Abstract: 25B22 f422 S2 f19
Contextual Info: CFT1812A CFT1812A CFT1812A 32-bit ALU 74181-type DESCRIPTION: CFT1812A is a 32-bit ALU which is extended from the CFT1810A with the same functions. LOGIC SYMBOL : INPUTS (LOADING IN TRANSISTOR PAIRS ) : S3(4), S2(4), SI(4), SO(4 ), A31(2.5), A30(2.5),A29{2.5),

BUZ310

Abstract: C67078-A3101-A2
Contextual Info: BUZ 310 SIPMOS Power Transistor • N channel • Enhancement mode Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code BUZ 310 1000 V 2.5 A 5Ω TO-218 AA C67078-A3101-A2 Maximum Ratings Parameter Symbol Drain source voltage VDS VDGR Drain-gate voltage

transistor buz 311

Abstract: BUZ 311 C67078-A3102-A2
Contextual Info: BUZ 311 SIPMOS Power Transistor • N channel • Enhancement mode Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code BUZ 311 1000 V 2.5 A 5Ω TO-218 AA C67078-A3102-A2 Maximum Ratings Parameter Symbol Drain source voltage VDS VDGR Drain-gate voltage

CA3127

Abstract: CA3227 CA3227M CA3227M96 TB379 610E 800E
Contextual Info: CA3227 IGNS W DES E N R O DED F E PRODUCT MMEN UT O C IT E T Data Sheet U BS S NOT R E L B A3127 POSSI CA3127, HF High-Frequency NPN Transistor Array For Low-Power Applications at Frequencies Up to 1.5GHz The CA3227 consists of five general purpose silicon NPN

TRANSISTOR REPLACEMENT GUIDE

Abstract: ULN2083 array MC1310P sfc*2741 TBA221 741TC uln2046a All in one TRANSISTOR REPLACEMENT GUIDE SFC2741 MC1305P
Contextual Info: Z ir SPRAGUE TRANSISTOR ARRAYS A New Approach to Design Problem Solving Sprague offers nine monolithic active-device arrays which com bine the performance and versatility of discrete devices with th e inherent reliability and matching of integrated circuits.

SFC2741

Abstract: sfc2741c TRANSISTOR REPLACEMENT GUIDE ULN2081A ULN2083 array SFC2741DC TDA1200 LM1307N MC1305P CA1310E
Contextual Info: SPRAGUE T ES T TYPE ULN-2054A DUAL INDEPENDENT DIFFERENTIAL AMPLIFIERS The ULN-2054A is a transistor array consisting of six NPN transistors on a single monolithic chip. The transistors are internally interconnected to form two independent differential am­

transistor B324

Abstract: B324 transistor b324 B-324 diode ZENER EJJ 1DI200ZN-120 M115
Contextual Info: 1DI200ZN-120 200A y < r7 - h : Outline Drawings 5 POWER TRANSISTOR MODULE •Features • hFE^i^i' High DC Current Gain KF*3J& : Applications • >/LEK • • NC —9 General Purpose Inyerter Uninterruptible Power Supply Servo & Spindle Drive for NC Machine Tools

Contextual Info: Order this data sheet by CA3146/D MOTOROLA M SC XSTRS/R F 4bE » b3b7254 0CHb4Ab MOTOROLA Q •MOTb - r ~ H ^ Z 5 CA3146 SEMICONDUCTORS P.O. BOX 20912 • PHOENIX. ARIZONA 85036 Specifications and A p p lication s Information GENERAL PURPOSE TRANSISTOR ARRAY

Contextual Info: Y TED Hygienischer Druckschalter Eigenschaften „„ -1 … 0 bar bis 0 … 25 bar „„ Robustes Edelstahlgehäuse für raue Umgebungsbedingungen „„ Eigensichere Ausführung (LCIE 03 ATEX 6300 X) „„Zwei Ausgänge mit Schaltfunktion (PNP-Transistor oder galvanisch

rp110n261

Abstract: RP110L161D RP110N151B RP110N081B RP110N141C RP110N171D RP110L121C5
Contextual Info: RP110x SERIES 150mA Low Supply Current LDO REGULATOR NO.EA-239-131023 OUTLINE The RP110x Series is a voltage regulator LDO IC, which has been developed using the CMOS process technology, with high output voltage accuracy, ultra-low supply current, and low ON-resistance transistor. The IC

B52 transistor

Contextual Info: Thal mLUM HEWLETT PACKARD Up to 6 GHz Medium Power Silicon Bipolar Transistor Chip Technical Data AT-42000 Features This device is designed for use in low noise, wideband amplifier, • High Output Power: mixer and oscillator applications 21.0 dBm Typical Pj iB at 2.0 GHz

IC M605

Abstract: diode B410 M605 6DI15A-120 30S3 T810 Transistor AC 125
Contextual Info: 6DI15A-12005A g ± / < 7 — )V I Outline Drawings POWER TRANSISTOR MODULE : Features • ffiflötEE High Voltage • 7 ij- * 4 •; K rt* Including Free Wheeling Diode ■ Insulated Type — Ty ^-^ Ç ■ 7t7.\'s9? *»250/ '■7T*.h'sf7 'H NttllD allOX 11- " T -—

a31s

Abstract: Silicon N Channel MOSFET Tetrode
Contextual Info: SIEMENS BF 2000W Silicon N Channel MOSFET Tetrode Target data sheet • Short-channel transistor with high S/C quality factor • For low-noise, gain-controlled input stages up to 1 GHz Type Marking Ordering Code Package II 5 CO h 1= D CO Q62702-F1772 CM BF 2000W NDs

A31L

Contextual Info: D 1 I O 2 O Z - 1 C 2 N 2 A : Outline Drawings POWER TRANSISTOR MODULE • 4t;Bb : Features • SffiME • 7 High Voltage y -¡m g K rt* • ASO A'TSv.' •mm Including Free W heeling Diode Excellent Safe Operating Area Insulated Type : Applications •

CA314E

Abstract: CA3146E RCA CA3183E CA-3018 ca3118 CA3118AT CA3146AE 3183a CA3146E two transistor forward
Contextual Info: G E SOLID STATE Dl D E I 3fl75Clfll G014b3fc> 1 | Arrays CA3118, CA3146, CA3183 “T * H 3 * Z S High-Voltage Transistor Arrays Features • Matched general-purpose transistors ■ V g £ matched + 5m V max. ■ Operation from DC to 120 MHz CA 3118AT, T ; CA 3146A E, E

CA3177E

Abstract: CA3177 01OUT TA10387 32INCH
Contextual Info: Power Control Circuits Advanced Information/ Preliminary Data CA3177 Operational Amplifier/ Comparator W ith Shutdow n C ontrol and Isolated Transistor FEATURES: • m m m Operates fro m single p o w e r su p p ly H igh o u tp u t c u rre n t 50 mA m ax.

AN5296 Application of the CA3018 Integrated

Abstract: TA618 ca3083 relay ts4 harris transistors transistor 102 CA3183 transistor 9-t TA6183 DARLINGTON TRANSISTOR ARRAY
Contextual Info: HARRIS SEflICOND SECTOR blE D • 43DP271 004703S bSG H H A S CA3146, CA3183 33 H a r r i s S E M I C O N D U C T O R ■ W » W W High-Voltage Transistor Arrays March 1993 Features Description • Matched General Purpose Transistors • VBE Matched ±5mV Max

C 3197

Abstract: hall current transducer 5A A3197LLT A3197LU
Contextual Info: Data Sheet 27609.10A 3197 PROTECTED, HIGH-TEMPERATURE, OPEN-COLLECTOR HALL-EFFECT LATCH X These open-collector Hall-effect latches are capable of sensing magnetic fields while using an unprotected power supply. The A3197LLT and A3197LU can provide position and speed information by providing a digital output for

A3197LLT

Abstract: A3197LU
Contextual Info: Data Sheet 27609.10A‡ 3197 PROTECTED, HIGH-TEMPERATURE, OPEN-COLLECTOR HALL-EFFECT LATCH X These open-collector Hall-effect latches are capable of sensing magnetic fields while using an unprotected power supply. The A3197LLT and A3197LU can provide position and speed information by providing a digital output for

Contextual Info: Data Sheet 27609.10A‡ 3197 PROTECTED, HIGH-TEMPERATURE, OPEN-COLLECTOR HALL-EFFECT LATCH X These open-collector Hall-effect latches are capable of sensing magnetic fields while using an unprotected power supply. The A3197LLT and A3197LU can provide position and speed information by providing a digital output for

FH-012A

Contextual Info: Data Sheet 27609.10A† 3197 PROTECTED, HIGH-TEMPERATURE, OPEN-COLLECTOR HALL-EFFECT LATCH X These open-collector Hall-effect latches are capable of sensing magnetic fields while using an unprotected power supply. The A3197LLT and A3197LU can provide position and speed information by providing a digital output for

hall current transducer 5A

Abstract: A3197LLT A3197LU
Contextual Info: Data Sheet 27609.10A 3197 PROTECTED, HIGH-TEMPERATURE, OPEN-COLLECTOR HALL-EFFECT LATCH X These open-collector Hall-effect latches are capable of sensing magnetic fields while using an unprotected power supply. The A3197LLT and A3197LU can provide position and speed information by providing a digital output for