CA3127 Search Results

CA3046 bjt

Abstract: CA3046 spice Pspice ca3086 CA3086 spice Harris CA3046 CA3046 CA3086 Harris CA3086 CA3046 NPN 0138E
Contextual Info: CA3046, CA3086, CA3127 Transistor Array SPICE Models Semiconductor Application Note June 1997 MM9701 Introduction Model Performance This application note describes the SPICE transistor models for the bipolar devices that comprise the CA3046, CA3086, and the CA3127 High Frequency NPN Transistor Arrays.

RCA-CA3127

Abstract: rca 0190 transistor iY22 rca 0190 CA3127 6 "transistor arrays" ic currentmirror
Contextual Info: G E SOLID STATE 01 3>e 1 3&7SQB1 Q014b43 T T ' 7 rLM 3 ‘'2S' IB _ W Arrays CA3127 High-Frequency N-P-N Transistor Array For Low -Pow er A pp lications at Frequencies up to 500 MHz

z144

Abstract: CA3127 1021-P1 cascode transistor array HP342A CA3127E CA3127M CA3127M96 zener Diode B22
Contextual Info: CA3127 High Frequency NPN Transistor Array August 1996 Features Description • Gain Bandwidth Product fT . . . . . . . . . . . . . . . . >1GHz The CA3127 consists of five general purpose silicon NPN transistors on a common monolithic substrate. Each of the

Contextual Info: Arrays ffl H A R R IS S E M I C O N D U C T O R RCA GE CA3127 INTERSIL May 1990 High-Frequency N -P -N Transistor Array For Low-Power Applications at Frequencies up to 500 MHz F e a tu re s : A pplications: G am -b an d w id th p ro d u c t f j > 1 GHz

CA3127

Abstract: TRANSISTOR 100MHz zener y21 CA3127E
Contextual Info: d ì CÌLJ CA3127 h -L A J R F R IS S E M I C O N D U C T O R High Frequency NPN Transistor Array August 1996 Features Description • Gain Bandwidth Product fT . >1GHz The CA3127 consists of five general purpose silicon NPN

Contextual Info: CA3127 HARRIS S E M I C O N D U C T O R High Frequency N-P-N Transistor Array March 1993 Features Description • Gain Bandwidth Product fT . >1GHz The CA3127* consists of five general purpose silicon n-p-n transistors on a common monolithic substrate. Each of the

CA3127E

Contextual Info: CA3127 Semiconductor High Frequency NPN Transistor Array August 1996 Features Description • Gain Bandwidth Product fT . >1GHz The CA3127 consists of five general purpose silicon NPN transistors on a common monolithic substrate. Each of the

CA3127

Abstract: CA3227 CA3227M CA3227M96 TB379 610E 800E
Contextual Info: CA3227 IGNS W DES E N R O DED F E PRODUCT MMEN UT O C IT E T Data Sheet U BS S NOT R E L B A3127 POSSI CA3127, HF High-Frequency NPN Transistor Array For Low-Power Applications at Frequencies Up to 1.5GHz The CA3227 consists of five general purpose silicon NPN

z144

Abstract: zener Diode B22 1021-P1 cascode transistor array CA3127 CA3127E CA3127M CA3127M96 HP342A ,zener Diode B22
Contextual Info: CA3127 S E M I C O N D U C T O R High Frequency NPN Transistor Array August 1996 Features Description • Gain Bandwidth Product fT . . . . . . . . . . . . . . . . >1GHz The CA3127 consists of five general purpose silicon NPN transistors on a common monolithic substrate. Each of the

HP-343A

Abstract: HP342A y12 t 646 HP343A CA3127E 1021-P1 cascode transistor array 150MIL CA3127 CA3127F
Contextual Info: CA3127 S E M I C O N D U C T O R High Frequency N-P-N Transistor Array March 1993 Features Description • Gain Bandwidth Product fT . . . . . . . . . . . . . . . . >1GHz The CA3127* consists of five general purpose silicon n-p-n transistors on a common monolithic substrate. Each of the

ccb transistor

Abstract: TRANSISTOR 100MHz
Contextual Info: CA3127 Data Sheet August 2003 FN662.4 High Frequency NPN Transistor Array Features The CA3127 consists of five general purpose silicon NPN transistors on a common monolithic substrate. Each of the completely isolated transistors exhibits low 1/f noise and a

z144

Abstract: HP342A CA3127 CA3127M CA3127MZ
Contextual Info: CA3127 Data Sheet June 5, 2006 FN662.5 High Frequency NPN Transistor Array Features The CA3127 consists of five general purpose silicon NPN transistors on a common monolithic substrate. Each of the completely isolated transistors exhibits low 1/f noise and a

CA3046 bjt

Abstract: CA3086 CA3046 spice CA3086 spice CA3046 Pspice ca3086 CA3046 NPN 333E CA3127 MM9701
Contextual Info: CA3046, CA3086, CA3127 Transistor Array SPICE Models TM Application Note tle 97 30 08 12 anr y E - June 1997 MM9701 Introduction Model Performance This application note describes the SPICE transistor models for the bipolar devices that comprise the CA3046, CA3086,

CA3127EX

Contextual Info: CA3127EX Transistors Independent Transistor Array Military/High-RelN Number of Devices5 Type NPN/PNP V(BR)CEO (V)15 V(BR)CBO (V) I(C) Max. (A)20m P(D) Max. (W)425m Minimum Operating Temp (øC)-55 Maximum Operating Temp (øC)125 I(CBO) Max. (A) @V(CBO) (V) (Test Condition)

Contextual Info: CA3127M Transistors Independent Transistor Array Military/High-RelN Number of Devices5 Type NPN/PNP V(BR)CEO (V)15 V(BR)CBO (V) I(C) Max. (A)20m P(D) Max. (W)425m Minimum Operating Temp (øC)-55 Maximum Operating Temp (øC)125 I(CBO) Max. (A) @V(CBO) (V) (Test Condition)

Contextual Info: £} HARRIS C A 3 1 2 7 High-Frequency N-P-N Transistor Array August 1991 F e a tu re s D e s c rip tio n • G a in -B a n d w id th P ro d u ct f y . > 1 G H z The CA3127* consists of five general-purpose silicon n -p -n transistors on a common monolithic substrate. Each

100MHZ NPN TRANSISTORS

Abstract: transistor 6623 CA3127 M16.15 Package low noise transistors rf 3127
Contextual Info: FHH A R R IS \CA3127 SEMICONDUCTOR 4 ', l i \ A tV. High Frequency NPN Transistor Array August 1996 Features Description • Gain Bandwidth Product fT .>1GHz The CA3127 consists of five general purpose silicon NPN transistors on a common monolithic substrate. Each of the

CA3046 bjt

Abstract: CA3086 ca3046 CA3046 spice MM9701 CA3046 NPN 333E CA3127 npn tr array CA3086 APPLICATION NOTE
Contextual Info: CA3046, CA3086, CA3127 Transistor Array SPICE Models Application Note June 1997 MM9701 Introduction Model Performance This application note describes the SPICE transistor models for the bipolar devices that comprise the CA3046, CA3086, and the CA3127 High Frequency NPN Transistor Arrays.

Harris CA3046

Abstract: CA3046 bjt Harris CA3086 CA3046 spice CA3046 CA3086 spice CA3086 Application of the CA3086 CA3127 MM9701
Contextual Info: Harris Semiconductor No. MM9701 Harris Linear June 1997 CA3046, CA3086, CA3127 Transistor Array SPICE Models Author: Rob Adams Introduction Model Performance This application note describes the SPICE transistor models for the bipolar devices that comprise the CA3046, CA3086,

chip die npn transistor

Abstract: quad hf npn transistors
Contextual Info: IGN W D ES E N R T FO ODUC NDED T E PR O MME U C IT E T R BS Data Sheet NOT LE S U A3127 POSSIB CA3127, HF April 2002 High-Frequency NPN Transistor Array For Low-Power Applications at Frequencies Up to 1.5GHz The CA3227 consists of five general purpose silicon NPN

Contextual Info: G E SOLID STATE 01 D E l 3675081 0014b43 T r r - S _ IB _ m 3 " 2 Arrays CA3127 High-Frequency N-P-N Transistor Array For Low-Power Applications at Frequencies up to 500 MHz Features:

Contextual Info: CA3127F Transistors Independent Transistor Array Military/High-RelN Number of Devices5 Type NPN/PNP V(BR)CEO (V)15 V(BR)CBO (V) I(C) Max. (A)20m P(D) Max. (W)425m Minimum Operating Temp (øC)-55 Maximum Operating Temp (øC)125 I(CBO) Max. (A) @V(CBO) (V) (Test Condition)

transistor 3609

Abstract: SL3127 CA3127 DS3628 SL3227 plessey SL3127 IC GEC SL322
Contextual Info: DS3628 - 1.3 SL3227 3GHz NPN TRANSISTOR ARRAYS The SL3227 is a monolithic array of the five high frequency low current NPN transistors in a 16 lead DIL package. The transistors exhibit typical fT of 3GHz and wideband noise figures of 2dB. The SL3227 is pin compatible with the CA3127

SL3127C

Abstract: plessey SL3127 SL3127
Contextual Info: GEC PLESSEY S EMI CONDS 43E D Bi 37bflS22 0G1347D 1 MPLSB GEC PLESSEY [ S E M I C O N D U C T O rT ] SL3127 HIGH FREQUENCY NPN TRANSISTOR ARRAY The SL3127C is a monolithic array of five high frequency low current NPN transistors in a 16 lead DIL package. The