CA3127M Search Results

Contextual Info: CA3127M Transistors Independent Transistor Array Military/High-RelN Number of Devices5 Type NPN/PNP V(BR)CEO (V)15 V(BR)CBO (V) I(C) Max. (A)20m P(D) Max. (W)425m Minimum Operating Temp (øC)-55 Maximum Operating Temp (øC)125 I(CBO) Max. (A) @V(CBO) (V) (Test Condition)

Arduino Mega2560

Abstract: 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l
Contextual Info: ND3% BASE1 XXXX2108-0010-1-P 10 TSQ: 3001 CMS: CMS-USM TS host OP: NN COMP: 15-07-11 Hour: 13:07 TS:TS date TS time MCUS, MPUS, DSPS & DEVELOPMENT TOOLS Find Datasheets Online 8-BIT MCUS & DEVELOPMENT TOOLS 1 PSoC 3 DEVELOPMENT KITS ARDUINO MCU DEVLOPMENT PLATFORM

z144

Abstract: CA3127 1021-P1 cascode transistor array HP342A CA3127E CA3127M CA3127M96 zener Diode B22
Contextual Info: CA3127 High Frequency NPN Transistor Array August 1996 Features Description • Gain Bandwidth Product fT . . . . . . . . . . . . . . . . >1GHz The CA3127 consists of five general purpose silicon NPN transistors on a common monolithic substrate. Each of the

CA3127

Abstract: TRANSISTOR 100MHz zener y21 CA3127E
Contextual Info: d ì CÌLJ CA3127 h -L A J R F R IS S E M I C O N D U C T O R High Frequency NPN Transistor Array August 1996 Features Description • Gain Bandwidth Product fT . >1GHz The CA3127 consists of five general purpose silicon NPN

Contextual Info: CA3127 HARRIS S E M I C O N D U C T O R High Frequency N-P-N Transistor Array March 1993 Features Description • Gain Bandwidth Product fT . >1GHz The CA3127* consists of five general purpose silicon n-p-n transistors on a common monolithic substrate. Each of the

Horizontal Transistor TT 2246

Abstract: ca3080 spice vogt transformer 406 69 CA3098 equivalent ICL8038 applications advantages disadvantages gi 9544 class d amplifier schematic hip4080 STR 6459 SEVEN PIN IC TRANSISTOR FOR POWER SUPPLY siemens transistor manual BUF601
Contextual Info: New High Speed Linear Products VIDEO OP AMPS AND BUFFERS HFA1105 LOW POWER VIDEO OP AMP HFA1115 I LOW POWER PROGRAMMABLE GAIN VIDEO BUFFER [ AnswerFAX DOCUMENT # 3395 AnswerFAX DOCUMENT * 3606 • -3dB Bandwidth Ay * + 2 . 350MHz

CA3127E

Contextual Info: CA3127 Semiconductor High Frequency NPN Transistor Array August 1996 Features Description • Gain Bandwidth Product fT . >1GHz The CA3127 consists of five general purpose silicon NPN transistors on a common monolithic substrate. Each of the

647 transistor

Abstract: TA6206 cascode transistor array
Contextual Info: H A RR IS S E M I C O N D S E C T O R ¡SjHARRIS blE D • 4 3 02 27 1 0 0 4 7 0 H b b46 « H A S 1A1197 Æ U S E M I C O N D U C T O R High Frequency N-P-N Transistor Array March 1993 Features • Gain Bandwidth Product (fT Description .>1GHz

cp4071

Abstract: data sheet IC 7408 2N4891 IC 7408 MDA970A2 MDA2500 1854-0071 MDA2502 2N4342 IC TTL 7400
Contextual Info: Transistor - Diode Cross Reference - H.P. Part Numbers to JEDEC Numbers Part Num. 1820-0225 1820-0240 1820-0352 1820-1804 1821-0001 1821-0002 1821-0006 1850-0062 1850-0064 1850-0075 1850-0076 1850-0093 1850-0099 1850-0126 1850-0137 1850-0150 1850-0151 1850-0154

HCA8001AIB

Abstract: hca8001 HCA8001IB ca3080e HIP51222 CDP65C51AE2 HAA9P-51635R2869 hip51222db CDP68HC68R2E HIP6008CB
Contextual Info: PRODUCT CHANGE NOTICE Refer to: PCN00067 Date: 8/25//00 Intersil’s Agreement with ChipPAC Notice of Qualification of ChipPAC Sites for Commercial SOIC, PLCC and PDIP Products I N T E R S I L C O R P O R A T I O N Ã ÃÃ| Post Office Box 883 | Melbourne, FL USA 32902-0883 | Telephone 407-724-7000 | www.intersil.com

z144

Abstract: zener Diode B22 1021-P1 cascode transistor array CA3127 CA3127E CA3127M CA3127M96 HP342A ,zener Diode B22
Contextual Info: CA3127 S E M I C O N D U C T O R High Frequency NPN Transistor Array August 1996 Features Description • Gain Bandwidth Product fT . . . . . . . . . . . . . . . . >1GHz The CA3127 consists of five general purpose silicon NPN transistors on a common monolithic substrate. Each of the

HP-343A

Abstract: HP342A y12 t 646 HP343A CA3127E 1021-P1 cascode transistor array 150MIL CA3127 CA3127F
Contextual Info: CA3127 S E M I C O N D U C T O R High Frequency N-P-N Transistor Array March 1993 Features Description • Gain Bandwidth Product fT . . . . . . . . . . . . . . . . >1GHz The CA3127* consists of five general purpose silicon n-p-n transistors on a common monolithic substrate. Each of the

ccb transistor

Abstract: TRANSISTOR 100MHz
Contextual Info: CA3127 Data Sheet August 2003 FN662.4 High Frequency NPN Transistor Array Features The CA3127 consists of five general purpose silicon NPN transistors on a common monolithic substrate. Each of the completely isolated transistors exhibits low 1/f noise and a

z144

Abstract: HP342A CA3127 CA3127M CA3127MZ
Contextual Info: CA3127 Data Sheet June 5, 2006 FN662.5 High Frequency NPN Transistor Array Features The CA3127 consists of five general purpose silicon NPN transistors on a common monolithic substrate. Each of the completely isolated transistors exhibits low 1/f noise and a

100MHZ NPN TRANSISTORS

Abstract: transistor 6623 CA3127 M16.15 Package low noise transistors rf 3127
Contextual Info: FHH A R R IS \CA3127 SEMICONDUCTOR 4 ', l i \ A tV. High Frequency NPN Transistor Array August 1996 Features Description • Gain Bandwidth Product fT .>1GHz The CA3127 consists of five general purpose silicon NPN transistors on a common monolithic substrate. Each of the