TA6206 Search Results

Contextual Info: HA RR IS SEflICOND S E CT OR im J MGE D 4302271 0032314 1 !HAS HARRIS High-Frequency N -P-N Transistor Array August 1991 Features Description • Galn-Bandwtdth Product f x . >1GHz • Power Gain .30dB (Typ) at 100MHz

M51517L

Abstract: SVI3102C LA4108 svi3102 SN76008 TDA7055 STK443 530 AN7166 TDA2025 UPC1288V
Contextual Info: Audio AUDIO POWER AMPLIFIER Aplikacje SPIS OBUDOWA SCHEMAT 5G31A 5G31B 5G31C 5G37 888-2 A1034P A2000V A2005V A2030 A205K A208E A208K A210E A210K A211D AN214 P,Q AN272 AN313 AN315 AN374 AN5260 AN5265 AN5270 AN5272 AN5273 AN5274 AN5275 AN5276 AN5277 AN5278

Contextual Info: CA3127 HARRIS S E M I C O N D U C T O R High Frequency N-P-N Transistor Array March 1993 Features Description • Gain Bandwidth Product fT . >1GHz The CA3127* consists of five general purpose silicon n-p-n transistors on a common monolithic substrate. Each of the

Horizontal Transistor TT 2246

Abstract: ca3080 spice vogt transformer 406 69 CA3098 equivalent ICL8038 applications advantages disadvantages gi 9544 class d amplifier schematic hip4080 STR 6459 SEVEN PIN IC TRANSISTOR FOR POWER SUPPLY siemens transistor manual BUF601
Contextual Info: New High Speed Linear Products VIDEO OP AMPS AND BUFFERS HFA1105 LOW POWER VIDEO OP AMP HFA1115 I LOW POWER PROGRAMMABLE GAIN VIDEO BUFFER [ AnswerFAX DOCUMENT # 3395 AnswerFAX DOCUMENT * 3606 • -3dB Bandwidth Ay * + 2 . 350MHz

647 transistor

Abstract: TA6206 cascode transistor array
Contextual Info: H A RR IS S E M I C O N D S E C T O R ¡SjHARRIS blE D • 4 3 02 27 1 0 0 4 7 0 H b b46 « H A S 1A1197 Æ U S E M I C O N D U C T O R High Frequency N-P-N Transistor Array March 1993 Features • Gain Bandwidth Product (fT Description .>1GHz

HP-343A

Abstract: HP342A y12 t 646 HP343A CA3127E 1021-P1 cascode transistor array 150MIL CA3127 CA3127F
Contextual Info: CA3127 S E M I C O N D U C T O R High Frequency N-P-N Transistor Array March 1993 Features Description • Gain Bandwidth Product fT . . . . . . . . . . . . . . . . >1GHz The CA3127* consists of five general purpose silicon n-p-n transistors on a common monolithic substrate. Each of the

Contextual Info: £} HARRIS C A 3 1 2 7 High-Frequency N-P-N Transistor Array August 1991 F e a tu re s D e s c rip tio n • G a in -B a n d w id th P ro d u ct f y . > 1 G H z The CA3127* consists of five general-purpose silicon n -p -n transistors on a common monolithic substrate. Each

2n3773 power Amplifier circuit diagrams

Abstract: SCR Handbook, rca HC2000H rca transistor npn a13 B0241C npn transistor RCA 467 40659 triac t6440m RCa T2850D DIAC D3202U
Contextual Info: RCA Power Devices This DATABOOK contains com­ plete technical information on the full line o f RCA solid-state power devices: power transistors, rf power transistors, power hybrid circuits, triacs, SCR’s, diacs, silicon rectifiers, and rectifier assemblies. A complete

Contextual Info: G E SOLID STATE 01 D E l 3675081 0014b43 T r r - S _ IB _ m 3 " 2 Arrays CA3127 High-Frequency N-P-N Transistor Array For Low-Power Applications at Frequencies up to 500 MHz Features: