TRANSISTOR 4115 Search Results

2SC5169

Abstract: low noise transistor table
Contextual Info: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL TRANSISTOR 2SC5169 DUAL TRANSISTOR FOR LOW NOISE DIFFERENTIAL AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SCS169 is a silicon NPN epitaxial type transistor. It Is designed for Unit:mm OUTLINE DRAWING

Contextual Info: SAMSUNG SPMICONDUCTOR INC 14E S MPSA62 D | 7^4115 00073b? 3 J PNP EPITAXIAL SILICON DARLINGTON TRANSISTOR DARLINGTON TRANSISTOR TO-92 • Collector-Emitter Voltage: V ces=20V • Collector Dissipation: Pc max =625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic

2sb504

Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
Contextual Info: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle

LG color tv Circuit Diagram schematics

Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

1N6227

Abstract: silec GG 84 1n623 2G300 chn 543 IC HXJ 2038 1N52398 IN5240 1n48 zener diode
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

csc4115bc

Abstract: CSC4115
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN EPITAXIAL PLANAR SILICON TRANSISTOR CSC4115 9AW TO-92 BCE MARKING : CSC 4115 BC ABSOLUTE MAXIMUM RATINGS(Ta=25deg C unless otherwise specified) DESCRIPTION SYMBOL

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN EPITAXIAL PLANAR SILICON TRANSISTOR CSC4115 9AW TO-92 BCE MARKING : CSC 4115 BC ABSOLUTE MAXIMUM RATINGS(Ta=25deg C unless otherwise specified) DESCRIPTION SYMBOL

pt 4115

Abstract: transistor k 4110 411e UNR4111 UNR4112 UNR4113 UNR4114 UNR4115 UNR4116 UNR4117
Contextual Info: Transistors with built-in Resistor UNR4111/4112/4113/4114/4115/4116/4117/ 4118/4119/4110/411D/411E/411F/411H/411L UN4111/4112/4113/4114/4115/4116/4117/4118/ 4119/4110/411D/411E/411F/411H/411L Silicon PNP epitaxial planer transistor Unit: mm 2.0±0.2 (0.8)

pt 4115

Abstract: transistor k 4110 4113 4114 D 4110 UNR4111 UNR4112 UNR4113 UNR4114 UNR4115
Contextual Info: Transistors with built-in Resistor UNR4111/4112/4113/4114/4115/4116/4117/ 4118/4119/4110/411D/411E/411F/411H/411L UN4111/4112/4113/4114/4115/4116/4117/4118/ 4119/4110/411D/411E/411F/411H/411L Silicon PNP epitaxial planer transistor Unit: mm 3.0±0.2 4.0±0.2

pt 4115

Abstract: transistor k 4110 UN4112 UN4113 UN4110 UN4111 UN4114 UN4115 UN4116 UN4117
Contextual Info: Transistors with built-in Resistor UN4111/4112/4113/4114/4115/4116/4117/4118/ 4119/4110/411D/411E/411F/411H/411L Silicon PNP epitaxial planer transistor For digital circuits Unit: mm 3.0±0.2 4.0±0.2 • Features ● ● ● ● ● ● ● ● ● ● ●

MARKING W1 AD

Abstract: transistor BC 153
Contextual Info: IS / IECQC 700000 IS / IECQC 750100 IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer NPN EPITAXIAL PLANAR SILICON TRANSISTOR CSC4115 9AW TO-92 BCE MARKING : CSC 4115 BC ABSOLUTE MAXIMUM RATINGS(Ta=25deg C unless otherwise specified)

2SC4115

Abstract: 2SA1585 4115S 4115
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89 Plastic-Encapsulate Transistors 2SC4115 TRANSISTOR NPN SOT-89 FEATURES z Low VCE(sat).VCE(sat) = 0.2V (Typ.)(IC / IB = 2A / 0.1A) z Excellent current gain characteristics. z Complements to 2SA1585

Transistor 2SA 2SB 2SC 2SD

Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
Contextual Info: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle

diode zener c25

Abstract: IGBT FF 300
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet MMG05N60D Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate This IGBT contains a built-in free wheeling diode and a gate protection zener diodes. Fast switching characteristics result in

Contextual Info: 5V/3.3V D FLIP-FLOP WITH RESET AND DIFFERENTIAL CLOCK FEATURES • ■ ■ ■ ■ ■ SY10EP51V DESCRIPTION 3.3V and 5V power supply options 320ps typical propagation delay Maximum frequency > 3GHz typical 75Ω internal input pulldown resistor Transistor count: 143

Contextual Info: 5V/3.3V D FLIP-FLOP WITH RESET AND DIFFERENTIAL CLOCK SY10EP51V FINAL FEATURES • ■ ■ ■ ■ ■ 3.3V and 5V power supply options 320ps typical propagation delay Maximum frequency > 3GHz typical 75Ω internal input pulldown resistor Transistor count: 143

MT1115

Abstract: 2N3303 FPT100 phototransistor UA739 equivalent transistor bc 554 pnp mt1039 ft2974 fairchild 2N3565 FD6666 diode transistor npn Epitaxial Silicon SST 117
Contextual Info: Fairchild Semiconductor T ransistor and Diode Data Catalog 1970 The Fairchild Semiconductor Transistor anc Diode Data Catalog is an all-inclusive volume of product information covering diodes anc transistors. Selection guides and data sheets fot each category of products assist you ir

2SC4115

Contextual Info: 2SC4115 3A , 40V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-89 FEATURES Small Flat Package General Purpose Application 4 Low VCE sat .VCE(sat) = 0.2V (Typ.)(IC / IB = 2A / 0.1A)

SY10EP51V

Abstract: SY10EP51VKI SY10EP51VKITR SY10EP51VZI SY10EP51VZITR
Contextual Info: 5V/3.3V D FLIP-FLOP WITH RESET AND DIFFERENTIAL CLOCK FEATURES • ■ ■ ■ ■ ■ SY10EP51V FINAL DESCRIPTION 3.3V and 5V power supply options 320ps typical propagation delay Maximum frequency > 3GHz typical 75Ω internal input pulldown resistor Transistor count: 143

Contextual Info: 5V/3.3V D FLIP-FLOP WITH RESET AND DIFFERENTIAL CLOCK ECL Pro SY10EP51V FINAL FEATURES • ■ ■ ■ ■ ■ 3.3V and 5V power supply options 320ps typical propagation delay Maximum frequency > 3GHz typical 75Ω internal input pulldown resistor Transistor count: 143

SMP30N10

Contextual Info: SMP30N10 N-Channel Enhancement Mode Transistor TO-22QAB TOP VIEW PRODUCT SUMMARY V BR DSS (V) rDS(ON) (n) •d (A) 100 0.060 30 1 GATE 2 DRAIN (Connected to TAB) 3 SOURCE ABSOLUTE MAXIMUM RATINGS (Tc = 25°C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS

pt 4115

Abstract: UN4112 un411F UN4110 UN4111 UN4113 UNR4110 UNR4111 UNR4112 UNR4113
Contextual Info: Transistors with built-in Resistor UNR41XX Series UN41XX Series Silicon PNP epitaxial planar transistor Unit: mm 4.0±0.2 • Features 7.6 (0.8) 3.0±0.2 For digital circuits 2.0±0.2 15.6±0.5 (0.8) 0.75 max. • Costs can be reduced through downsizing of the equipment and

IRFF9230

Abstract: TA17512
Contextual Info: IRFF9230 Data Sheet February 1999 -4.0A, -200V, 0.800 Ohm, P-Channel Power MOSFET File Number 2225.2 Features • -4.0A, -200V This P-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of