TRANSISTOR 356 B Search Results

Contextual Info: SIEMENS BUZ 356 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 356 Vbs 800 V h ^DS on Package Ordering Code 5.3 A 2w TO-218AA C67078-S3108-A2 Maximum Ratings Parameter Symbol Continuous drain current Values Unit

transistor 356 j

Abstract: transistor 356 b
Contextual Info: SIEMENS BUZ 356 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 356 Vbs 800 V h 5.3 A ^DSion Package Ordering Code 2H TO-218 AA C67078-S3108-A2 Maximum Ratings Parameter Symbol Continuous drain current Values b 5.3

C67078-S3108-A2

Contextual Info: BUZ 356 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code BUZ 356 800 V 5.3 A 2Ω TO-218 AA C67078-S3108-A2 Maximum Ratings Parameter Symbol Continuous drain current

C67078-S3108-A2

Contextual Info: BUZ 356 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code BUZ 356 800 V 5.3 A 2Ω TO-218 AA C67078-S3108-A2 Maximum Ratings Parameter Symbol Continuous drain current

BUK444

Abstract: BUK444-800A BUK444-800B YA11
Contextual Info: PHILIPS INTERNATIONAL fc.SE D • 7110fl2b DDt,3^fll 356 ■ PHIN Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in

Contextual Info: TO SHIBA 2SA1356 2 S A 1 356 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm AUDIO POWER AMPLIFIER APPLICATIONS. • Low Saturation Voltage : VCE(sat) = - 0.32V (Typ.) (IC = - 500mA, IB = - 50mA) High Collector Power Dissipation : P q = 1.2W (Ta = 25°C)

2SA1356

Abstract: 2SC3419 2sc341 2SA135
Contextual Info: 2SA1356 TO SH IBA 2 S A 1 356 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm AUDIO POWER AMPLIFIER APPLICATIONS. • • • Low Saturation Voltage : VcE(sat) = -0.32V (Typ.) (IC = - 500mA, IB = -50m A ) High Collector Power Dissipation : P 0 = 1.2W(Ta = 25°C)

A1356 transistor

Abstract: A1356 2SA1356 2SC3419
Contextual Info: TOSHIBA 2SA1356 2 S A 1 356 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm AUDIO PO W ER AM PLIFIER APPLICATIONS. • 8.3MAX. . 5.8 Low Saturation Voltage : VcE(sat) = -0.32V (Typ.) (IC = - 500mA, IB =-50m A ) High Collector Power Dissipation : P0 = 1.2W(Ta = 25°C)

2SA1356

Abstract: 2SC3419
Contextual Info: 2SA1356 TO SH IBA 2 S A 1 356 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm AUDIO POWER AMPLIFIER APPLICATIONS 8.3 MAX. • • • Low Saturation Voltage : VCE(sat)“ —0.32V (Typ.) (In = -500m A, IB = -50m A) High Collector Power Dissipation : P 0 = 1.2W(Ta = 25°C)

A1356 transistor

Abstract: a1356 2SA1356 2SC3419
Contextual Info: TO S H IB A 2SA1356 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2 S A 1 356 AUDIO PO W ER AM PLIFIER APPLICATIONS. • U n it in mm Low Satu ration V oltage : VCE(sat) = - 0 .3 2 V (Typ.) (IC = - 500m A, IB = - 50mA) • H igh Collector Pow er D issipation : P q = 1.2W (Ta = 25°C)

300v dc 230v DC motor speed controllers

Abstract: Allen-bradley servo motor 1326 1391-T100DT 230v ac to 12v dc without transformer circuit dia 1388-XA Allen-bradley DC servo motor 1326 transformer core 2500 kVA Allen-bradley servo controller. 1388 1391-T150DT Allen-Bradley mod pot
Contextual Info: Product Data Bulletin 1391 AC PWM Servo Controller Introduction Controller Description Publication 1391-2.0 - August, 1990 Supersedes August, 1986 This publication provides detailed information about the Bulletin 1391 AC Servo Controller. The topics covered in this publication are listed

N03E

Abstract: HBC2500 USE OF TRANSISTOR AMP017 opamp 555 3-input xnor Analog Devices Opamp transistor 2955 AMP016 op-amp- 356
Contextual Info: HBC2500 H A R R IS S E M I C O N D U C T O R 3fim B iM O S-E A nalog/D igital Library February 1992 Features • Description Cost-Effective 3 Micron BiCMOS Technology Integrates Up to 2000 Gates and 100 Op Amps HBC2500 is a mixed-signal analog and digital BICMOS

TA2761

Abstract: indiana general ferrites RCA-40608 HP608D transistor v2w 40608 CM 40608 field strength meter RCA Solid State Power Transistor BALLANTINE
Contextual Info: File No. 356 [JUCBZTD ^ P o w e r T r a n s is to rs Solid State Division 40608 RCA-40608 is an ep itax ial silico n n-p-n p lan ar tra n s is ­ tor. I t is e s p e c ia lly designed for operation a s a C la s s A, wide-band power am plifier in VHF circu its.

8L AA

Abstract: 9v smd transistor smd 4401 NPN Switching Transistor 10MW CS2516 pulse stretcher circuit diagram smd transistor 8L stretcher pulse stretcher circuit ct 60 transistor
Contextual Info: CS2516 CS2516 Pulse-Load Battery Monitor Description The CS2516 is designed for use in battery powered medical, security, or environmental systems where prior notification of impending power source failure is a requirement. The IC effectively provides continuous monitoring of battery condition by pulsesampling the system voltage at predetermined intervals. Low standby current permits unswitched connection to

B 315 D

Abstract: SOT89 pq SOT494 SOD89 SOT233 SOT89 Package pq TRANSISTOR SMD CODE PACKAGE SOT89 TRANSISTOR SMD CODE PACKAGE SOT89 4 250 B 340 smd Transistor msc377
Contextual Info: CHAPTER 6 PACKING METHODS page Introduction 6-2 Glossary of terms 6-2 Packing methods in exploded view 6-3 Packing quantities, box dimensions and carrier shapes 6 - 13 Philips Semiconductors Discrete Semiconductor Packages Packing Methods Chapter 6 INTRODUCTION

Contextual Info: KSR1110 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION Bias Resistor Built In • Switching Circuit, Inverter, Interface circuit Driver circuit • Built in bias Resistor (R=10Ktt) • Complement to KSR2110 ABSOLUTE MAXIMUM RATINGS (T,=25°C) Characteristic

K*D1691

Contextual Info: KSD1691 NPN EPITAXIAL SILICON TRANSISTOR LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT TO-126 HIGH POWER DISSIPATION : PT = 1.3W T. =25°C Complementary to KSB1151 ABSOLUTE MAXIMUM RATINGS Symbol Characteristic Collector-Base Voltage Collector-Emitter Voltage

sot446

Abstract: sot482a MSC090 SOD89
Contextual Info: SC18_1999_.book : SC18_CHAPTER_6_1999 1 Wed May 12 11:40:55 1999 CHAPTER 6 PACKING METHODS page Introduction 6-2 Glossary of terms 6-2 Packing methods in exploded view 6-3 Packing quantities, box dimensions and carrier shapes 6 - 13 SC18_1999_.book : SC18_CHAPTER_6_1999

Contextual Info: Central“ CXT3019 sem iconductor Corp. NPN SILICON TRANSISTOR DESCRIPTION: The C EN TR A L SEM ICONDUCTOR CXT3019 type is an NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high current general purpose

Contextual Info: KSR1101 NPN EPJTAXIAL SILICON TRANSISTOR SW ITCHING APPLICATION Bias Resistor Built In • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R, «4.7U1, R*=4.7kû) • Complement to KSR2101 SO T-23 ABSO LU TE MAXIMUM RATINGS (TA=25'C)

Contextual Info: BS250 P-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR P-channel enhancement mode vertical D-MOS transistor in TO-92 variant envelope and intended for use in relay, high-speed and line-transformer drivers. Features • • • • Low RpSon D irect interface to C MOS

CS3972

Abstract: CS3972YDW16 CS3972YDWR16 CS3972YN8 CS3972YT5 MS-001 MS-013
Contextual Info: CS3972 CS3972 1.25A High Efficiency Switching Regulator Features Description The CS3972 is a 1.25A, 60V, current mode, high efficiency, switching regulator circuit. It can be configured in buck, boost, forward, isolated and non-isolated topologies, using a single-ended switch.

Philips FA 145

Abstract: BFQ17 lem HA dK SOT89
Contextual Info: DK. ^ . • P hilips Sem iconductors N A U ER LbSBTai 002505S SflS H I A P X PHILIPS/DISCRETE b 7E NPN 1 GHz wideband transistor DESCRIPTION Product specification D £ BFQ17 PINNING NPN transistor in a SOT89 plastic envelope intended for application in thick and thin-film circuits. The

Contextual Info: N ANER PHILIPS/DISCRETE ObE D bbS3T31 0DlS7Qfl =1 J BF550 V r - 3/-/5- SILICON PLANAR EPITAXIAL TRANSISTOR P-N-P transistor, in a microminiature plastic envelope, intended for applications in thick and thin-film circuits. This transistor is primarily intended for use in i.f. detection applications.