TRANSISTOR 356 B Search Results

BUK444

Abstract: BUK444-800A BUK444-800B YA11
Contextual Info: PHILIPS INTERNATIONAL fc.SE D • 7110fl2b DDt,3^fll 356 ■ PHIN Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in

Contextual Info: TO SHIBA 2SA1356 2 S A 1 356 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm AUDIO POWER AMPLIFIER APPLICATIONS. • Low Saturation Voltage : VCE(sat) = - 0.32V (Typ.) (IC = - 500mA, IB = - 50mA) High Collector Power Dissipation : P q = 1.2W (Ta = 25°C)

2SA1356

Abstract: 2SC3419 2sc341 2SA135
Contextual Info: 2SA1356 TO SH IBA 2 S A 1 356 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm AUDIO POWER AMPLIFIER APPLICATIONS. • • • Low Saturation Voltage : VcE(sat) = -0.32V (Typ.) (IC = - 500mA, IB = -50m A ) High Collector Power Dissipation : P 0 = 1.2W(Ta = 25°C)

A1356 transistor

Abstract: A1356 2SA1356 2SC3419
Contextual Info: TOSHIBA 2SA1356 2 S A 1 356 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm AUDIO PO W ER AM PLIFIER APPLICATIONS. • 8.3MAX. . 5.8 Low Saturation Voltage : VcE(sat) = -0.32V (Typ.) (IC = - 500mA, IB =-50m A ) High Collector Power Dissipation : P0 = 1.2W(Ta = 25°C)

N03E

Abstract: HBC2500 USE OF TRANSISTOR AMP017 opamp 555 3-input xnor Analog Devices Opamp transistor 2955 AMP016 op-amp- 356
Contextual Info: HBC2500 H A R R IS S E M I C O N D U C T O R 3fim B iM O S-E A nalog/D igital Library February 1992 Features • Description Cost-Effective 3 Micron BiCMOS Technology Integrates Up to 2000 Gates and 100 Op Amps HBC2500 is a mixed-signal analog and digital BICMOS

TA2761

Abstract: indiana general ferrites RCA-40608 HP608D transistor v2w 40608 CM 40608 field strength meter RCA Solid State Power Transistor BALLANTINE
Contextual Info: File No. 356 [JUCBZTD ^ P o w e r T r a n s is to rs Solid State Division 40608 RCA-40608 is an ep itax ial silico n n-p-n p lan ar tra n s is ­ tor. I t is e s p e c ia lly designed for operation a s a C la s s A, wide-band power am plifier in VHF circu its.

8L AA

Abstract: 9v smd transistor smd 4401 NPN Switching Transistor 10MW CS2516 pulse stretcher circuit diagram smd transistor 8L stretcher pulse stretcher circuit ct 60 transistor
Contextual Info: CS2516 CS2516 Pulse-Load Battery Monitor Description The CS2516 is designed for use in battery powered medical, security, or environmental systems where prior notification of impending power source failure is a requirement. The IC effectively provides continuous monitoring of battery condition by pulsesampling the system voltage at predetermined intervals. Low standby current permits unswitched connection to

Contextual Info: KSR1110 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION Bias Resistor Built In • Switching Circuit, Inverter, Interface circuit Driver circuit • Built in bias Resistor (R=10Ktt) • Complement to KSR2110 ABSOLUTE MAXIMUM RATINGS (T,=25°C) Characteristic

Contextual Info: Central“ CXT3019 sem iconductor Corp. NPN SILICON TRANSISTOR DESCRIPTION: The C EN TR A L SEM ICONDUCTOR CXT3019 type is an NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high current general purpose

Contextual Info: BS250 P-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR P-channel enhancement mode vertical D-MOS transistor in TO-92 variant envelope and intended for use in relay, high-speed and line-transformer drivers. Features • • • • Low RpSon D irect interface to C MOS

CS3972

Abstract: CS3972YDW16 CS3972YDWR16 CS3972YN8 CS3972YT5 MS-001 MS-013
Contextual Info: CS3972 CS3972 1.25A High Efficiency Switching Regulator Features Description The CS3972 is a 1.25A, 60V, current mode, high efficiency, switching regulator circuit. It can be configured in buck, boost, forward, isolated and non-isolated topologies, using a single-ended switch.

Contextual Info: N ANER PHILIPS/DISCRETE ObE D bbS3T31 0DlS7Qfl =1 J BF550 V r - 3/-/5- SILICON PLANAR EPITAXIAL TRANSISTOR P-N-P transistor, in a microminiature plastic envelope, intended for applications in thick and thin-film circuits. This transistor is primarily intended for use in i.f. detection applications.

J406

Abstract: TRANSISTOR J406 TRANSISTOR j412 ultrarf UPB2025B J245
Contextual Info: URFDB Sec 03_2025B 11/3/99 10:35 AM Page 3-50 UPB2025B 25W, 2.0GHz, 24V Broadband RF Power NPN Bipolar Transistor Description This device is designed for base station applications up to frequencies of 2.0GHz. Rated with a minimum output power of 25W, it is ideal for CDMA, TDMA, GSM, FM,

MS001

Abstract: CS3972 CS3972YDW16 CS3972YDWR16 CS3972YN8 CS3972YT5 CS3972YTHA5 CS3972YTVA5 MS-001 MS-013
Contextual Info: CS3972 CS3972 1.25A High Efficiency Switching Regulator Features Description The CS3972 is a 1.25A, 60V, current mode, high efficiency, switching regulator circuit. It can be configured in buck, boost, forward, isolated and non-isolated topologies, using a single-ended switch.

Contextual Info: PRELIMINARY DATA SHEET SILICON TRANSISTOR µPA804T NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD The 2SC4571 has built-in 2 transistors which were developed for UHF. PACKAGE DRAWINGS (Unit: mm) FEATURES 2.1±0.1 • High fT 1.25±0.1

Contextual Info: KSR1112 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION Bias Resistor Built In SOT-23 • Switching Circuit, Inverter, Interface circuit Driver circuit • Built in bias Resistor (R=47Kf!) • Complement to KSR2112 ABSOLUTE MAXIMUM RATINGS (Ta=25°C)

APA075

Abstract: CCGA FBGA-484 datasheet APA1000 APA150 APA300 APA450 APA600 APA750 FG256
Contextual Info: Product Brief TM ProASICPLUS Flash Family FPGAs Features and Benefits • High Capacity High Performance Routing Hierarchy Commercial and Industrial • • • • • • • 75,000 to 1 Million System Gates 27 k to 198 kbits of Two-Port SRAM 66 to 712 User I/Os

Contextual Info: N AMER PHILIPS/DISCRETE X7 DbE D b b S B ' m aoisaii o RZ1214B35Y PULSED MICROWAVE POWER TRANSISTOR N-P-N silicon microwave power transistor for use in a common-base, class-C wideband amplifier and operating under pulsed conditions in L-band radar applications.

Amplifier with transistor BC548

Abstract: AUDIO Amplifier with transistor BC548 1315 TRANSISTOR transistor 1151 transistor transistor 2n5401 TDA7050 BC327 NPN transistor datasheet BC547 driver BUX86 TRANSISTOR
Contextual Info: Philips Semiconductors Semiconductors for Wired Telecom Systems Index Types added to the range since the last issue of data handbook IC03a are shown in bold print. The types showing an “x”instead of a page number, are not printed in the book, but appear in the selection guides

Contextual Info: ON Semiconductort BF721T1 PNP Silicon Transistor ON Semiconductors Preferred Device MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO –300 Vdc Collector-Base Voltage VCBO –300 Vdc Collector-Emitter Voltage VCER –300 Vdc Emitter-Base Voltage

BUZ211

Contextual Info: _ PowerMOS transistor_ BUZ211 N AMER PHILIPS/DISCRETE DbE D • _ _SL OOlMbbfl 7 ■ T-si-13 July 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a metal envelope. FREDFET* with fast-recovery reverse diode.

PZ2327B15U

Contextual Info: PZ2327B15U PHILIPS INTERNATIONAL SbE D • 711DflSb DDMb4flfl QM3 ■ P H I N 7 ^ 3 3 -0 ? MICROWAVE POWER TRANSISTOR NPN silicon epitaxial microwave power transistor, intended fo r use in a common-base, class-C broad­ band power am plifier, operating in the 2.3 to 2.7 GHz frequency range.

Contextual Info: MARKTECH INTERNATIONAL IflE D S7TìbSS 000QM51 4 SLOTTED SWITCH MTSS8040 INFRARED LED+PHOTO TRANSISTOR _ii •“ • i APPLICATIONS ÍJQ • OPTICAL SWITCH • SHAFT POSITION AND VELOCITY SENSOR 1. 2. 3. 4. FEATURES • Both chips face each other across a 0.118 inch air gap.

BUK455-500B

Abstract: T0220AB
Contextual Info: PHILIPS INTERNATIONAL bSE D B 711Gâ2ti GObMGTb SGÔ M P H I N Philips Semiconductors Product Spécification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in