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    BUZ211_ Search Results

    BUZ211_ Datasheets (6)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    BUZ211
    		Philips Semiconductors PowerMOS Transistor Original PDF 230.88KB 7
    BUZ211
    		Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF 120.74KB 1
    BUZ211
    		Unknown FET Data Book Scan PDF 62.85KB 1
    BUZ211
    		Unknown Shortform Datasheet & Cross References Data Short Form PDF 84.39KB 1
    BUZ211
    		Siemens SIPMOS Power Transistors Scan PDF 41KB 1
    BUZ211
    		Siemens Power Transistors Scan PDF 200.23KB 5

    BUZ211_ Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    BUZ211

    Abstract: T-39-13 IEC134 T2113
    Contextual Info: PowerMOS transistor_BUZ211 N AMER P H IL IP S/ DI SC RE TE ObE D • ^53=131 0014bbö 1_ 7 ■ r - s i - 1 3 July 1987 QUICK REFERENCE DATA GENERAL DESCRIPTION N-channel enhancement mode PARAMETER SYMBOL field-effect power transistor in a Drain-source voltage


    OCR Scan     		BUZ211 0014bbà T-21-13 BUZ211 0014b74 T-39-13 IEC134 T2113 PDF

    BUZ211

    Abstract: 30VN IEC134
    Contextual Info: BUZ211 PowerMOS transistor N AMER P H I L I P S /D I S CR ET E ObE D ^ 53=131 0014bbö 7 I T - 2 1 -1 3 July 1987 QUICK REFERENCE DATA GENERAL DESCRIPTION N-channel enhancement mode PARAMETER SYMBOL field-effect power transistor in a Drain-source voltage metal envelope.


    OCR Scan     		BUZ211 0014bbà T-21-13 0014L7M T-39-13 BUZ211 30VN IEC134 PDF

    BUZ211

    Contextual Info: _ PowerMOS transistor_ BUZ211 N AMER PHILIPS/DISCRETE DbE D • _ _SL OOlMbbfl 7 ■ T-si-13 July 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a metal envelope. FREDFET* with fast-recovery reverse diode.


    OCR Scan     		BUZ211 T-si-13 bbS3131 D014b T-39-13 BUZ211_ 0014b74 BUZ211 PDF