TRANSISTOR 2SD468 Search Results

MN1280

Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
Contextual Info: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor

oz960

Abstract: khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
Contextual Info: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors

2SD468

Contextual Info: ST 2SD468 NPN Silicon Epitaxial Planar Transistor Low Frequency Power amplifier applications. The transistor is subdivided into two groups B and C according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.

2SD468

Contextual Info: ST 2SD468 NPN Silicon Epitaxial Planar Transistor Low Frequency Power amplifier applications. The transistor is subdivided into two groups B and C according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.

2SD468

Abstract: 2sD468 transistor
Contextual Info: ST 2SD468 NPN Silicon Epitaxial Planar Transistor Low Frequency Power amplifier applications. The transistor is subdivided into two groups B and C according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.

2sb504

Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
Contextual Info: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle

rjh3047

Abstract: rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055
Contextual Info: 2007.12 Renesas Discrete General Catalog Transistor/Diode/ Triac/ Thyristor www.renesas.com Triacs and Thyristors Small-Signal Transistors Power Transistor Renesas discrete devices: extending the limits Advanced electronic equipment requires larger data processing

Contextual Info: UNISONICTECHNOLOGIESCO., LTD 2SD468 www.unisonic.com.tw Copyright 2008 Unisonic Technologies Co., Ltd NPN SILICON TRANSISTOR 1 of 4 QW-R211-003.B

y51 h 120c

Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK

Transistor 2SA 2SB 2SC 2SD

Abstract: 993 395 pnp npn transistor 2SA 101 TRANSISTOR 2SC 635 transistor 2Sb 474 transistor 2SC458 transistor 2sc2512 transistor 2sk 168 transistor 2SD 1153 3SK228
Contextual Info: Index Bipolar Transistor PNP, High Frequency Use 2SA Type 2SA673 . 81 2SA 673A . 81

2SC 8550

Abstract: 6020v4 6030v4 HITACHI 08122B 2SC 8050 HITACHI 08123B transistor h945 H945 TRANSISTOR c 6030v4 2sk3545
Contextual Info: Status List HITACHI TRANSISTOR/GaAsIC Vol.16-4 2002.11 Topic - Hitachi High Frequency Bipolar Transistors . 2 Index . 3, 4

2SD468

Abstract: transistor 2sd468 2SB562 2SB5621
Contextual Info: UTC 2SD468 NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER FEATURES *Low frequency power amplifier *Complement to 2SB562 1 TO-92NL 1:EMITTER 2:COLLECTOR 3:BASE ABSOLUTE MAXIMUM RATINGS Ta=25°C, unless otherwise specified PARAMETER SYMBOL

2SB562

Abstract: 2SD468
Contextual Info: UTC 2SB562 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER FEATURES *Low frequency power amplifier *Complement to 2SD468 1 TO-92NL 1:EMITTER 2:COLLECTOR 3:BASE ABSOLUTE MAXIMUM RATINGS Ta=25°C, unless otherwise specified PARAMETER SYMBOL

2SD468

Abstract: 2SD468L 2sD468 transistor pf 08a -pt 2SB562 2SB56 2SB5621
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SD468 NPN SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER „ FEATURES 1 TO-92 * Low frequency power amplifier * Complement to 2SB562 1 TO-92NL *Pb-free plating product number: 2SD468L „ ORDERING INFORMATION Ordering Number

Contextual Info: UTC 2SD468 NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER FEATURES *Low frequency power amplifier *Complement to 2SB562 1 TO-92NL 1:EMITTER 2:COLLECTOR 3:BASE ABSOLUTE MAXIMUM RATINGS Ta=25°C, unless otherwise specified PARAMETER SYMBOL

2SD468

Abstract: 2SB562
Contextual Info: UTC 2SD468 NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER FEATURES *Low frequency power amplifier *Complement to 2SB562 1 TO-92 1:EMITTER 2:COLLECTOR 3:BASE ABSOLUTE MAXIMUM RATINGS Ta=25°C, unless otherwise specified PARAMETER SYMBOL VALUE

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92L Plastic-Encapsulate Transistors 2SD468 TO-92L TRANSISTOR NPN 1. EMITTER FEATURES Power dissipation PCM: 2. COLLECTOR 0.9 W (Tamb=25℃) 3. BASE Collector current 1 A ICM: Collector-base voltage 25

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92MOD Plastic-Encapsulate Transistors 2SD468 TO – 92M TO – 92MOD TRANSISTOR NPN 1. COLLECTOR 1. EMITTER 2. BASE FEATURES z Low Frequency Power Amplifier z Low Breakdown Voltage 2. COLLECTOR 3. EMITTER

2SB562

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SB562 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER „ 1 FEATURES TO-92 * Low frequency power amplifier * Complement to 2SD468 1 „ TO-92NL ORDERING INFORMATION Order Number Lead Free Halogen Free 2SB562L-x-T92-B

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92L Plastic-Encapsulate Transistors TO – 92L 2SB562 TRANSISTOR PNP 1. EMITTER 2. COLLECTOR FEATURES z Low Frequency Power Amplifier z Complementary Pair with 2SD468 3. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92L Plastic-Encapsulate Transistors 2SB562 TO-92L TRANSISTOR PNP FEATURES z z 1. EMITTER 2. COLLECTOR Low frequency power amplifier• Complementary pair with 2SD468 3. BASE MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92L Plastic-Encapsulate Transistors TO – 92L 2SD468 TRANSISTOR NPN 1. EMITTER 2. COLLECTOR FEATURES z Low Frequency Power Amplifier z Complementary Pair with 2SB562 3. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

2sb562

Abstract: 2SD468 2SB56
Contextual Info: 2SB562 0.9 W, -1 A, -25 V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES z Low frequency power amplifier z Complementary pair with 2SD468 ABSOLUTE MAXIMUM RATINGS at Ta = 25°C

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92L Plastic-Encapsulate Transistors 2SD468 TO-92L TRANSISTOR（NPN） FEATURES Power dissipation PCM : 0.9 W（Tamb=25℃） Collector current ICM : 1 A Collector-base voltage V BR CBO : 25 V Operating and storage junction temperature range