2SA1438
Contextual Info: Ordering number : EN 1857B PNP Epitaxial Planar Silicon Transistor 2SA1438 High hFE, Low-Frequency General-Purpose Amp Applications
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2N2222A 338
Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
Contextual Info: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK
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y51 h 120c
Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK
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500ma240mwfy51 h 120cbd124+8kt368bfq59silec semiconductorsbd214al103afy18bd192mm1711
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800-1200MHZ
Abstract: 2SA1434 marking fl VEBO-15V
Contextual Info: Ordering number:EN1853A PNP Epitaxial Planar Silicon Transistor 2SA1434 High hFE, Low-Frequency General-Purpose Amp Applications Applications Package Dimensions • Low frequency general-purpose amplifiers, drivers, muting circuits. unit:mm 2018A [2SA1434]
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2SA1435
Abstract: ITR03602 ITR03603 ITR03604 ITR03605 ITR03606
Contextual Info: Ordering number:ENN1856A PNP Epitaxial Planar Silicon Transistor 2SA1435 High hFE, AF Amplifier Applications Applications Package Dimensions • Low frequency general-purpose amplifiers, drivers, muting circuits. unit:mm 2003B [2SA1435] Features 5.0 4.0 4.0
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2SA1435
Abstract: ITR03602 ITR03603 ITR03604 ITR03605
Contextual Info: Ordering number:ENN1856B PNP Epitaxial Planar Silicon Transistor 2SA1435 High hFE, AF Amplifier Applications Applications Package Dimensions • Low frequency general-purpose amplifiers, drivers, muting circuits. unit:mm 2003B [2SA1435] Features 5.0 4.0 4.0
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2SA1433
Contextual Info: Ordering number:ENN3471 PNP Epitaxial Planar Silicon Transistor 2SA1433 High-Definition CRT Display Applications Features Package Dimensions • High fT Gain-Bandwidth Product . · Small reverse transfer capacitance (Cre=1.3pF). · Adoption of FBET process.
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EN3471
Abstract: 2SA1433
Contextual Info: Ordering number:EN3471 PNP Epitaxial Planar Silicon Transistor 2SA1433 High-Definition CRT Display Applications Features Package Dimensions • High fT Gain-Bandwidth Product . · Small reverse transfer capacitance (Cre=1.3pF). · Adoption of FBET process.
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2SA1433
Abstract: ITR03587
Contextual Info: 2SA1433 Ordering number : ENN3471A SANYO Semiconductors DATA SHEET 2SA1433 PNP Epitaxial Planar Silicon Transistor High-Definition CRT Display Applications Features • • • High fT Gain-Bandwidth Product . Small reverse transfer capacitance (Cre=1.3pF).
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2SA1435
Abstract: VEBO-15V
Contextual Info: Ordering number:EN1856A PNP Epitaxial Planar Silicon Transistor 2SA1435 High hFE, AF Amplifier Applications Applications Package Dimensions • Low frequency general-purpose amplifiers, drivers, muting circuits. unit:mm 2003A [2SA1435] Features · Adoption of MBIT process.
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Contextual Info: 2SA1433 Ordering number : ENN3471A 2SA1433 PNP Epitaxial Planar Silicon Transistor High-Definition CRT Display Applications Features • • • High fT Gain-Bandwidth Product . Small reverse transfer capacitance (Cre=1.3pF). Adoption of FBET process. Specifications
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2-7D101A
Abstract: 2SA1432 2SC3672 A1432 nixie tube driver 2sc367
Contextual Info: 2SA1432 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1432 High Voltage Control Applications Plasma Display, Nixie Tube Driver Applications Cathode Ray Tube Brightness Control Applications • High voltage: VCBO = −300 V, VCEO = −300 V
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2SA1432
Abstract: 2-7D101A 2SC3672 A1432
Contextual Info: 2SA1432 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1432 High Voltage Control Applications Plasma Display, Nixie Tube Driver Applications Cathode Ray Tube Brightness Control Applications • High voltage: VCBO = −300 V, VCEO = −300 V
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EN3471
Abstract: 2SA1433
Contextual Info: Ordering number:EN 3471 _ 2SA1433 No.3471 r PNP Epitaxial Planar Silicon Transistor High-Definition CRT Display Applications Features • High fx Gain-Bandwidth Product •Small reverse transfer capacitance (cre = 1.3pF) • Adoption of FBET process
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2SA1437
Abstract: ITR03622 ITR03623 ITR03624
Contextual Info: Ordering number:ENN2524A PNP Epitaxial Planar Silicon Transistor 2SA1437 High-hFE, AF Amplifier Applications Applications Package Dimensions • AF amplifier, various drivers, muting circuit. unit:mm 2003B Features [2SA1437] · Ultrasmall-sized package permitting sets to be made
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Transistor 2SA 2SB 2SC 2SD
Abstract: S-AU27M S2000A inverter P4005 S-AV21H S-AU27 3182N 2sb 834 transistor Transistor 2SC4288A Drive IC 2SC3346
Contextual Info: TO-126 IS , PO W ER MOLD PACKAGE TRANSISTOR SELECTION GUIDE • TO-126 (IS) ▲ PW MOLD Darlington A PW MOLD • POWER MOLD TO-126 (IS) Darlington TO-126 OS) H A T0-220AB, TO-220 (IS) PACKAGE TRANSISTOR S E L ECTION G UIDE r— " ~ '''- Y C E O ( V ) lc (A)
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o-126t0-220abo-2202sc4544+132sc44482sc36122bc4201transistor 2sa 2sb 2sc 2sds-au27ms2000a inverterp4005s-av21hs-au273182n2sb 834 transistortransistor 2sc4288adrive ic 2sc3346
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A-1432
Abstract: 2SA1432
Contextual Info: 2SA1432 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1432 High Voltage Control Applications Plasma Display, Nixie Tube Driver Applications Unit: mm Cathode Ray Tube Brightness Control Applications • High voltage: VCBO = −300 V, VCEO = −300 V
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2SA1432
Abstract: Display Nixie 2-7D101A 2SC3672 A1432
Contextual Info: 2SA1432 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1432 High Voltage Control Applications Plasma Display, Nixie Tube Driver Applications Unit: mm Cathode Ray Tube Brightness Control Applications • High voltage: VCBO = −300 V, VCEO = −300 V
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2sa14322sc3672display nixie2-7d101a+1a1432
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2sa143
Abstract: 2SA1437 VEBO-15V
Contextual Info: Ordering number:EN2524A PNP Epitaxial Planar Silicon Transistor 2SA1437 High-hFE, AF Amplifier Applications Applications Package Dimensions • AF amplifier, various drivers, muting circuit. unit:mm 2003A Features [2SA1437] · Very small-sized package permitting sets to be made
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2SA1434
Abstract: ITR03593 ITR03594 ITR03595 ITR03596
Contextual Info: Ordering number:ENN1853A PNP Epitaxial Planar Silicon Transistor 2SA1434 High hFE, Low-Frequency General-Purpose Amp Applications Applications Package Dimensions • Low frequency general-purpose amplifiers, drivers, muting circuits. unit:mm 2018B · Ultrasmall-sized package permitting 2SA1434-used
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2SA1438
Abstract: 71ti 2sa143 nhp relay SC-51
Contextual Info: Ordering number: EN 1857B 2SA1438 N0.1857B PNP Epitaxial P lanar Silicon Transistor SAiYO i H igh hpE, Low-Frequency General-Purpose Amp Applications Applications . Voltage regulators, relay drivers, lamp drivers, electrical equipment Features . Adoption of MBIT process
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2SA1437
Contextual Info: Ordering number: EN 2524A _ N0.2524A 2SA1437 PNP Epitaxial Planar Silicon Transistor i High-hjTE, A F Amp Applications Applications . AF amp, various drivers, muting circuit Features . Very small-sized package permitting sets to be made smaller and slimmer,
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Contextual Info: Ordering number: EN 2 456 No.2456 _ 2SA1436 PNP Epitaxial Planar Silicon Transistor I High-hpE^ AF Amp Applications Applications . AF amp, various drivers, muting circuit Features . Adoption of MBIT process . High DC current gain hpE=500 to 1200
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2SA1436
Abstract: ITR03612 ITR03613 ITR03614 ITR03615
Contextual Info: Ordering number:ENN2456 PNP Epitaxial Planar Silicon Transistor 2SA1436 High hFE, AF Amplifier Applications Applications Package Dimensions • AF amplifier, various drivers, muting circuit. unit:mm 2003B Features [2SA1436] · Adoption of MBIT process. · High DC current gain hFE=500 to 1200 .
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