TRANSISTOR 2SA143 Search Results

TRANSISTOR 2SA143 Result Highlights (5)

Part	Manufacturer	Description	Download
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723	Datasheet
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold	Datasheet
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold	Datasheet
TTA012	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-80 V / IC=-4 A / hFE=100~200 / VCE(sat)=-0.22 V / tf=35 ns / PW-Mini	Datasheet
TPCP8514	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PS-8	Datasheet

TRANSISTOR 2SA143 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
2SA1438 Contextual Info: Ordering number : EN 1857B PNP Epitaxial Planar Silicon Transistor 2SA1438 High hFE, Low-Frequency General-Purpose Amp Applications	Original	1857B 2SA1438 2SA1438	PDF
2N2222A 338 Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931 Contextual Info: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK	OCR Scan	2CY17 2CY18 2CY19 2CY20 2CY21 500MA 500MA 2N2222A 338 TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931	PDF
y51 h 120c Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711 Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK	OCR Scan	500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711	PDF
800-1200MHZ Abstract: 2SA1434 marking fl VEBO-15V Contextual Info: Ordering number:EN1853A PNP Epitaxial Planar Silicon Transistor 2SA1434 High hFE, Low-Frequency General-Purpose Amp Applications Applications Package Dimensions • Low frequency general-purpose amplifiers, drivers, muting circuits. unit:mm 2018A [2SA1434]	Original	EN1853A 2SA1434 2SA1434] 2SA1434-used VEBO15V) 800-1200MHZ 2SA1434 marking fl VEBO-15V	PDF
2SA1435 Abstract: ITR03602 ITR03603 ITR03604 ITR03605 ITR03606 Contextual Info: Ordering number:ENN1856A PNP Epitaxial Planar Silicon Transistor 2SA1435 High hFE, AF Amplifier Applications Applications Package Dimensions • Low frequency general-purpose amplifiers, drivers, muting circuits. unit:mm 2003B [2SA1435] Features 5.0 4.0 4.0	Original	ENN1856A 2SA1435 2003B 2SA1435] VEBO15V) 2SA1435 ITR03602 ITR03603 ITR03604 ITR03605 ITR03606	PDF
2SA1435 Abstract: ITR03602 ITR03603 ITR03604 ITR03605 Contextual Info: Ordering number:ENN1856B PNP Epitaxial Planar Silicon Transistor 2SA1435 High hFE, AF Amplifier Applications Applications Package Dimensions • Low frequency general-purpose amplifiers, drivers, muting circuits. unit:mm 2003B [2SA1435] Features 5.0 4.0 4.0	Original	ENN1856B 2SA1435 2003B 2SA1435] VEBO15V) 2SA1435 ITR03602 ITR03603 ITR03604 ITR03605	PDF
2SA1433 Contextual Info: Ordering number:ENN3471 PNP Epitaxial Planar Silicon Transistor 2SA1433 High-Definition CRT Display Applications Features Package Dimensions • High fT Gain-Bandwidth Product . · Small reverse transfer capacitance (Cre=1.3pF). · Adoption of FBET process.	Original	ENN3471 2SA1433 2006B 2SA1433] 2SA1433	PDF
EN3471 Abstract: 2SA1433 Contextual Info: Ordering number:EN3471 PNP Epitaxial Planar Silicon Transistor 2SA1433 High-Definition CRT Display Applications Features Package Dimensions • High fT Gain-Bandwidth Product . · Small reverse transfer capacitance (Cre=1.3pF). · Adoption of FBET process.	Original	EN3471 2SA1433 2SA1433] SC-51 EN3471 2SA1433	PDF
2SA1433 Abstract: ITR03587 Contextual Info: 2SA1433 Ordering number : ENN3471A SANYO Semiconductors DATA SHEET 2SA1433 PNP Epitaxial Planar Silicon Transistor High-Definition CRT Display Applications Features • • • High fT Gain-Bandwidth Product . Small reverse transfer capacitance (Cre=1.3pF).	Original	2SA1433 ENN3471A 2SA1433 ITR03587	PDF
2SA1435 Abstract: VEBO-15V Contextual Info: Ordering number:EN1856A PNP Epitaxial Planar Silicon Transistor 2SA1435 High hFE, AF Amplifier Applications Applications Package Dimensions • Low frequency general-purpose amplifiers, drivers, muting circuits. unit:mm 2003A [2SA1435] Features · Adoption of MBIT process.	Original	EN1856A 2SA1435 2SA1435] VEBO15V) SC-43 2SA1435 VEBO-15V	PDF
Contextual Info: 2SA1433 Ordering number : ENN3471A 2SA1433 PNP Epitaxial Planar Silicon Transistor High-Definition CRT Display Applications Features • • • High fT Gain-Bandwidth Product . Small reverse transfer capacitance (Cre=1.3pF). Adoption of FBET process. Specifications	Original	2SA1433 ENN3471A	PDF
2-7D101A Abstract: 2SA1432 2SC3672 A1432 nixie tube driver 2sc367 Contextual Info: 2SA1432 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1432 High Voltage Control Applications Plasma Display, Nixie Tube Driver Applications Cathode Ray Tube Brightness Control Applications • High voltage: VCBO = −300 V, VCEO = −300 V	Original	2SA1432 2SC3672 2-7D101A 2SA1432 2SC3672 A1432 nixie tube driver 2sc367	PDF
2SA1432 Abstract: 2-7D101A 2SC3672 A1432 Contextual Info: 2SA1432 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1432 High Voltage Control Applications Plasma Display, Nixie Tube Driver Applications Cathode Ray Tube Brightness Control Applications • High voltage: VCBO = −300 V, VCEO = −300 V	Original	2SA1432 2SC3672 2SA1432 2-7D101A 2SC3672 A1432	PDF
EN3471 Abstract: 2SA1433 Contextual Info: Ordering number:EN 3471 _ 2SA1433 No.3471 r PNP Epitaxial Planar Silicon Transistor High-Definition CRT Display Applications Features • High fx Gain-Bandwidth Product •Small reverse transfer capacitance (cre = 1.3pF) • Adoption of FBET process	OCR Scan	2SA1433 EN3471 2SA1433	PDF

2SA1437 Abstract: ITR03622 ITR03623 ITR03624 Contextual Info: Ordering number:ENN2524A PNP Epitaxial Planar Silicon Transistor 2SA1437 High-hFE, AF Amplifier Applications Applications Package Dimensions • AF amplifier, various drivers, muting circuit. unit:mm 2003B Features [2SA1437] · Ultrasmall-sized package permitting sets to be made	Original	ENN2524A 2SA1437 2003B 2SA1437] VCEO100V) VEBO15V) 2SA1437 ITR03622 ITR03623 ITR03624	PDF
Transistor 2SA 2SB 2SC 2SD Abstract: S-AU27M S2000A inverter P4005 S-AV21H S-AU27 3182N 2sb 834 transistor Transistor 2SC4288A Drive IC 2SC3346 Contextual Info: TO-126 IS , PO W ER MOLD PACKAGE TRANSISTOR SELECTION GUIDE • TO-126 (IS) ▲ PW MOLD Darlington A PW MOLD • POWER MOLD TO-126 (IS) Darlington TO-126 OS) H A T0-220AB, TO-220 (IS) PACKAGE TRANSISTOR S E L ECTION G UIDE r— " ~ '''- Y C E O ( V ) lc (A)	OCR Scan	O-126 O-126 T0-220AB, O-220 2SC4544 2SC4448 2SC3612 2BC4201 Transistor 2SA 2SB 2SC 2SD S-AU27M S2000A inverter P4005 S-AV21H S-AU27 3182N 2sb 834 transistor Transistor 2SC4288A Drive IC 2SC3346	PDF
A-1432 Abstract: 2SA1432 Contextual Info: 2SA1432 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1432 High Voltage Control Applications Plasma Display, Nixie Tube Driver Applications Unit: mm Cathode Ray Tube Brightness Control Applications • High voltage: VCBO = −300 V, VCEO = −300 V	Original	2SA1432 2SC3672 A-1432 2SA1432	PDF
2SA1432 Abstract: Display Nixie 2-7D101A 2SC3672 A1432 Contextual Info: 2SA1432 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1432 High Voltage Control Applications Plasma Display, Nixie Tube Driver Applications Unit: mm Cathode Ray Tube Brightness Control Applications • High voltage: VCBO = −300 V, VCEO = −300 V	Original	2SA1432 2SC3672 2SA1432 Display Nixie 2-7D101A 2SC3672 A1432	PDF
2sa143 Abstract: 2SA1437 VEBO-15V Contextual Info: Ordering number:EN2524A PNP Epitaxial Planar Silicon Transistor 2SA1437 High-hFE, AF Amplifier Applications Applications Package Dimensions • AF amplifier, various drivers, muting circuit. unit:mm 2003A Features [2SA1437] · Very small-sized package permitting sets to be made	Original	EN2524A 2SA1437 2SA1437] VCEO100V) VEBO15V) SC-43 2sa143 2SA1437 VEBO-15V	PDF
2SA1434 Abstract: ITR03593 ITR03594 ITR03595 ITR03596 Contextual Info: Ordering number:ENN1853A PNP Epitaxial Planar Silicon Transistor 2SA1434 High hFE, Low-Frequency General-Purpose Amp Applications Applications Package Dimensions • Low frequency general-purpose amplifiers, drivers, muting circuits. unit:mm 2018B · Ultrasmall-sized package permitting 2SA1434-used	Original	ENN1853A 2SA1434 2018B 2SA1434-used VEBO15V) 2SA1434] 2SA1434 ITR03593 ITR03594 ITR03595 ITR03596	PDF
2SA1438 Abstract: 71ti 2sa143 nhp relay SC-51 Contextual Info: Ordering number: EN 1857B 2SA1438 N0.1857B PNP Epitaxial P lanar Silicon Transistor SAiYO i H igh hpE, Low-Frequency General-Purpose Amp Applications Applications . Voltage regulators, relay drivers, lamp drivers, electrical equipment Features . Adoption of MBIT process	OCR Scan	1857B l857B 2SA1438 ebo-15v> SC-43 2SA1438 71ti 2sa143 nhp relay SC-51	PDF
2SA1437 Contextual Info: Ordering number: EN 2524A _ N0.2524A 2SA1437 PNP Epitaxial Planar Silicon Transistor i High-hjTE, A F Amp Applications Applications . AF amp, various drivers, muting circuit Features . Very small-sized package permitting sets to be made smaller and slimmer,	OCR Scan	2SA1437	PDF
Contextual Info: Ordering number: EN 2 456 No.2456 _ 2SA1436 PNP Epitaxial Planar Silicon Transistor I High-hpE^ AF Amp Applications Applications . AF amp, various drivers, muting circuit Features . Adoption of MBIT process . High DC current gain hpE=500 to 1200	OCR Scan	2SA1436 VEBOi15V)	PDF
2SA1436 Abstract: ITR03612 ITR03613 ITR03614 ITR03615 Contextual Info: Ordering number:ENN2456 PNP Epitaxial Planar Silicon Transistor 2SA1436 High hFE, AF Amplifier Applications Applications Package Dimensions • AF amplifier, various drivers, muting circuit. unit:mm 2003B Features [2SA1436] · Adoption of MBIT process. · High DC current gain hFE=500 to 1200 .	Original	ENN2456 2SA1436 2003B 2SA1436] VEBO15V) 2SA1436 ITR03612 ITR03613 ITR03614 ITR03615	PDF

TRANSISTOR 2SA143 Search Results

TRANSISTOR 2SA143 Result Highlights (5)

TRANSISTOR 2SA143 Datasheets Context Search

2SA1438

2N2222A 338

y51 h 120c

800-1200MHZ

2SA1435

2SA1435

2SA1433

EN3471

2SA1433

2SA1435

2-7D101A

2SA1432

EN3471

2SA1437

Transistor 2SA 2SB 2SC 2SD

A-1432

2SA1432

2sa143

2SA1434

2SA1438

2SA1437

2SA1436