TRANSISTOR - CL 100 Search Results

transistor TE 901 equivalent

Abstract: transistor TE 901 IGT6D11 IGT6E11
Contextual Info: IGT6D11,E11 Insulated Gate Bipolar Transistor 101 AMPERES 400, 500 VOLTS EQUIV. RdS ON = 0.27 Cl This IGT Transistor (Insulated Gate Bipolar Transistor) is a new type of MOS-gate turn on/off power switching device combining the best advantages of power MOSFETS and

transistor wm

Abstract: OC172 AF266 BLV10 TRANSISTOR K 135 J 50 7Z77760
Contextual Info: PHILIPS INTERNATIONAL bSE D • 711Dö2b □ D b 5 7 clö T7S J IPHIN BLV10 V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated mobile, h.f. and v.h.f. transmitters with a nominal supply voltage of 13,5 V. The transistor is resistance stabilized and

BFQ42

Abstract: w7 transistor transistor w7 IRF 502 TRANSISTOR BLW29 transistor j18 Si NPN c25a f0pf philips bfq42
Contextual Info: P H IL IP S El b5E D INTERNATIONAL 711002b G0b2bD2 3 b l • P H I N BFQ42 V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended fo r use in cl ass-A, B or C operated mobile transmitters w ith a nominal supply voltage o f 13,5 V . The transistor is resistance stabilized and is

IBM vga registers

Abstract: PE-LD 22621 cirrus vga lg crt monitor rgb cable ERE9
Contextual Info: IC*- ' fl* CL-GD6340 Preliminary Data Sheet 'CIRRUS LOGIC FEATURES m 100% IBM VGA compatible at the display level • Supports SimulSCAN — displays on CRT and LCD simultaneously ■ Providesfull-colorVGAon8-or512-colorTFT Thin Film Transistor and other active-matrix or color

Contextual Info: MICRO E LE CT RONI CS LTD 41E D b G T I TÛ ê 0 0 0 0 cl ci2 3 MEHK T -3 3 "/^ 2N3055 NPN HIGH POWER SILICON PLANER TRANSISTOR MECHANICAL UUTblWE. GENERAL DESCRIPTION The 2N3055 is an NPN silicon planer power transistor. It is intended for use in class B

SMW45N10

Contextual Info: SMW45N10 erSiScanix ^LJP incorporated N-Channel Enhancement Mode Transistor TO-247 AD TOP VIEW PRODUCT SUMMARY V BR DSS 100 r DS(ON) •d (Cl) (A) 0.040 45 1 GATE 2 DRAIN 3 SOURCE 1 2 3 ABSOLUTE MAXIMUM RATINGS (Tc = 25°C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS

Contextual Info: TOSHIBA SSM3J01F TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE SSM3J01 F HIGH SPEED SWITCHING APPLICATIONS U nit in mm + 0.5 • Small Package • Low on Resistance • Low Gate Threshold Voltage : Ron = 0.4 Cl Max. (VQg : Ron = 0.6 O (Max.) (Vq s

FZJ 121

Contextual Info: rz j SGS-1H0MS0N Ä T # « » IL Iffir a « ! S TB 3 N A 80 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE V dss RDS on Id STB3NA80 800 V < 4.5 Cl 3.1 A . . . . . . . . TYPICAL RDS(on) = 3.5 Ü ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED

digital transistor array

Abstract: marking 702 sot363
Contextual Info: SIEMENS BCR 169S PNP Silicon Digital Transistor Array • Switching circuit, inverter, interface circuit, driver circuit • Two galvanic internal isolated Transistors in one package • Built in bias resistor (R1=4.7kQ) Cl U 12 FI FI FI U lii ÜJ Type Marking Ordering Code Pin Configuration

Contextual Info: TOSHIBA TENTATIVE SSM6J06FU TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE SSM6J06FU POWER MANAGEMENT SWITCH Unit in mm HIGH SPEED SWITCHING APPLICATIONS 2.1 • Small Package • Low on Resistance : Ron = 0.5 Cl Max. V qs = —4 V : Ron = 0.7 O Max. (Vq s = -2 .5 V)

vn30ab

Abstract: VN67ABA VN35ABA VN90ABA VN30ABA VN89ABA
Contextual Info: VN30ABA Series PSMiFa-GffiQ MÛT 1.2 AMPERES 35-90 VOLTS r DS(ON = 2.5-5.0 Cl FIELD EFFECT POWER TRANSISTOR This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE’s advanced Power DM OS technology to achieve low on-resistance with excellent device ruggedness and reliability.

Contextual Info: SANYO SEMI CONDUCTOR CORP 22E D ? ci cl ? Q 7 b FC106 QQQ7 3 7 Q 5 T-35-21 NPN Epitaxial Planar Silicon Com posite Transistor 2067 Switching Applications with Bias Resistances R1=47kO, R2=47kO F e a tu re s • On-chip bias resistors (Ri = 47kQ,R2= 47kfl)

Contextual Info: SGS-THOMSON [MOigœilLiera *® STU9NA60 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR PRELIMINARY DATA TYPE S TU 9N A60 V dss R dS oii Id 600 V < 0 .8 Q. 9 A • TYPICAL RDS(on) = 0.68 Cl . EFFICIENT AND RELAIBLE MOUNTING THROUGH CLIP . ± 30V GATE TO SOURCE VOLTAGE RATING

Contextual Info: HEWLETT-PACKARD/ m C MP N T S blE D • 44475Û4 0 D D cl 7 b ö D2T AT-00500 UP to 4 GHz General Purpose Silicon Bipolar Transistor Chip HEW LETT PACKARD Chip Outline Features • 16.0 dBm typical Pi dB at 2.0 GHz • • • 11.5 dB typical Gi dB at 2.0 GHz

Contextual Info: SGS-THOMSON [MOigœilLiera *® STP3NA90 STP3NA90FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR PRELIMINARY DATA TYPE STP3NA90 STP3NA90FI V dss R d S oii Id 90 0 V 90 0 V < 5 .3 Q. < 5 .3 Cl 3 A 1.9 A . • TYPICAL RüS(on) =4.4 £1 ± 30V GATE TO SOURCE VOLTAGE RATING

TD62101F

Abstract: TD62103F TD62104F TD62105F
Contextual Info: Hept Darlington Transistor Array -7 3 r' # g & MIN VcE IOUT - TYP # tt £ & V 350 mA TI 0 .3 2 5 V FC 0 .1 flS MOT 0 .2 Ms S ig 15 pF AMD NS 1000 Hf e tON MAX 25 Pd 38 ? V o u t= 2 5 V , tO FF CL=15pF ClN V in = 0 , R l= 7 0 Q f = 1 MHz n RAY MMI intei SPR

2N7080

Contextual Info: 2N7080 C T SiEconix JJm in c o rp o ra te d P-Channel Enhancement Mode Transistor TO -254A A Herm etic Package TOP VIEW o PRODUCT SUMMARY V BR DSS (V) rDS(ON) (Cl) •d (A) -20 0 0.500 -9 .5 1 DRAIN 2 SOURCE 3 GATE 1 2 3 Case Isolated ABSOLUTE MAXIMUM RATINGS (Tc = 25°C Unless Otherwise Noted)1

Contextual Info: TLP733FJLP734F TO SHIBA TOSHIBA PHOTOCOUPLER TI P7 3 3 F GaAs IRED & PHOTO-TRANSISTOR TI P73 4F Unit in mm OFFICE MACHINE SWITCHING PO W ER SUPPLY TJ.'TJJXT 3 7I QUQUT1? U 11U -1- T T . PI U7 QT 1y l l ? W UnAOViO P Iie> 4-e>U in f CL o r\l^ A + A /O optically coupled to a gallium arsenide infrared emitting diode in a six

2SC3271 N

Abstract: 2SC3271 2SC3271 P R3307 Transistor 126m
Contextual Info: ROHM CO 4DE LTD 7 ô S ô ci li cl J> Q00S7b3 1 E 3 RHM 2SC3271 h 7 > v ' 7 $ / I ransistors -7 ^ 3 3 - 0 7 ¡2 2 7 * 3 H M i £ f [ 7 0U - ^ N p N ' > u = l > S l i E i i 'f i f f i / H i g h Voltage Amp. Triple Diffused Planar NPN Silicon Transistor

Contextual Info: S G S -T H O M S O N [M O ig œ ilL iera « ® 7 80 80 STW NA STH NA FI 7 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR PRELIMINARY DATA TYP E STW 7N A80 STH 7N A80FI V dss R dS oii Id 800 V 800 V < 1.9 a. < 1.9 Q. 6.5 A 4 A • TYPICAL RüS(on) = 1.68 Cl

Contextual Info: STW 9 NA60 S T H 9 N A 6 0 FI S G S -T H O M S O N [M O ig œ ilL ie ra *® N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYP E STW 9N A60 STH 9N A60FI • . . . . . . V dss RDS on Id 600 V 600 V < 0 .8 Q. < 0 .8 Q. 9.5 A 6.4 A TYPICAL RüS(on) = 0.69 Cl

PNP marking NY sot-223

Abstract: 2N4403 FZT749 TC55 TC57 TC572502ECT TC573002ECT TC573302ECT ZTX749 2N4403 diagram
Contextual Info: TC57 Line Regulator Controller Features General Description • Low Dropout Voltage: 100mV @ 650mA with FZT749 PNP Transistor • 2.7V to 8V Supply Range • Low Operating Current: 50µA Operating, 0.2µA Shutdown • Low True Chip Enable • Output Accuracy < ±2%

Contextual Info: CMOS, Low Voltage RF/Video, SPST Switch ADG751 a FEATURES High Off Isolation –75 dB at 100 MHz –3 dB Signal Bandwidth 300 MHz +1.8 V to +5.5 V Single Supply Low On-Resistance 15 ⍀ Fast Switching Times tON Typically 9 ns tOFF Typically 3 ns Typical Power Consumption <0.01 ␮W

darlington pair transistor

Abstract: SN75469 EQUIVALENT DARLINGTON ARRAYS npn darlington array Darlington pair IC schematic 1N3064 SN75468 SN75469 ULN2003A ULN2004A
Contextual Info: SN75468, SN75469 DARLINGTON TRANSISTOR ARRAYS SLRS023B – DECEMBER 1976 – REVISED SEPTEMBER 1995 HIGH-VOLTAGE HIGH-CURRENT DARLINGTON TRANSISTOR ARRAYS • D OR N PACKAGE TOP VIEW 500-mA Rated Collector Current (Single Output) High-Voltage Outputs . . . 100 V