TRANSISTOR - CL 100 Search Results
TRANSISTOR - CL 100 Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
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| BLA1011-300 |
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BLA1011-300 - 300W LDMOS Avionics Power Transistor |
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| 54F151LM/B |
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54F151 - Multiplexer, 1-Func, 8 Line Input, TTL |
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| 93L422ADM/B |
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93L422A - 256 x 4 TTL SRAM |
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| 93425ADM/B |
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93425 - 1K X 1 TTL SRAM |
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| 27S185DM/B |
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27S185 - OTP ROM, 2KX4, 55ns, TTL, CDIP18 |
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TRANSISTOR - CL 100 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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transistor TE 901 equivalent
Abstract: transistor TE 901 IGT6D11 IGT6E11
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OCR Scan |
IGT6D11 6D11- transistor TE 901 equivalent transistor TE 901 IGT6E11 | |
transistor wm
Abstract: OC172 AF266 BLV10 TRANSISTOR K 135 J 50 7Z77760
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OCR Scan |
Db57clà BLV10 76-j16 7Z78515 transistor wm OC172 AF266 BLV10 TRANSISTOR K 135 J 50 7Z77760 | |
BFQ42
Abstract: w7 transistor transistor w7 IRF 502 TRANSISTOR BLW29 transistor j18 Si NPN c25a f0pf philips bfq42
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OCR Scan |
711002b BFQ42 BFQ42 BLW29 7Z77622 7Z77623 7Z77624 w7 transistor transistor w7 IRF 502 TRANSISTOR transistor j18 Si NPN c25a f0pf philips bfq42 | |
IBM vga registers
Abstract: PE-LD 22621 cirrus vga lg crt monitor rgb cable ERE9
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OCR Scan |
Providesfull-colorVGAon8-or512-colorTFT CL-GD6340 CL-GD6340 IBM vga registers PE-LD 22621 cirrus vga lg crt monitor rgb cable ERE9 | |
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Contextual Info: MICRO E LE CT RONI CS LTD 41E D b G T I TÛ ê 0 0 0 0 cl ci2 3 MEHK T -3 3 "/^ 2N3055 NPN HIGH POWER SILICON PLANER TRANSISTOR MECHANICAL UUTblWE. GENERAL DESCRIPTION The 2N3055 is an NPN silicon planer power transistor. It is intended for use in class B |
OCR Scan |
2N3055 2N3055 15Amp l00ohm | |
SMW45N10Contextual Info: SMW45N10 erSiScanix ^LJP incorporated N-Channel Enhancement Mode Transistor TO-247 AD TOP VIEW PRODUCT SUMMARY V BR DSS 100 r DS(ON) •d (Cl) (A) 0.040 45 1 GATE 2 DRAIN 3 SOURCE 1 2 3 ABSOLUTE MAXIMUM RATINGS (Tc = 25°C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS |
OCR Scan |
SMW45N10 O-247 10peration SMW45N10 | |
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Contextual Info: TOSHIBA SSM3J01F TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE SSM3J01 F HIGH SPEED SWITCHING APPLICATIONS U nit in mm + 0.5 • Small Package • Low on Resistance • Low Gate Threshold Voltage : Ron = 0.4 Cl Max. (VQg : Ron = 0.6 O (Max.) (Vq s |
OCR Scan |
SSM3J01F SSM3J01 O-236MOD SC-59 | |
FZJ 121Contextual Info: rz j SGS-1H0MS0N Ä T # « » IL Iffir a « ! S TB 3 N A 80 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE V dss RDS on Id STB3NA80 800 V < 4.5 Cl 3.1 A . . . . . . . . TYPICAL RDS(on) = 3.5 Ü ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED |
OCR Scan |
STB3NA80 O-262) O-263) 0D72312 O-263 FZJ 121 | |
digital transistor array
Abstract: marking 702 sot363
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OCR Scan |
OT-363 digital transistor array marking 702 sot363 | |
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Contextual Info: TOSHIBA TENTATIVE SSM6J06FU TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE SSM6J06FU POWER MANAGEMENT SWITCH Unit in mm HIGH SPEED SWITCHING APPLICATIONS 2.1 • Small Package • Low on Resistance : Ron = 0.5 Cl Max. V qs = —4 V : Ron = 0.7 O Max. (Vq s = -2 .5 V) |
OCR Scan |
SSM6J06FU | |
vn30ab
Abstract: VN67ABA VN35ABA VN90ABA VN30ABA VN89ABA
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OCR Scan |
VN30ABA VN30ABA VN35ABA VN67ABA VN89ABA VN90ABA vn30ab VN90ABA | |
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Contextual Info: SANYO SEMI CONDUCTOR CORP 22E D ? ci cl ? Q 7 b FC106 QQQ7 3 7 Q 5 T-35-21 NPN Epitaxial Planar Silicon Com posite Transistor 2067 Switching Applications with Bias Resistances R1=47kO, R2=47kO F e a tu re s • On-chip bias resistors (Ri = 47kQ,R2= 47kfl) |
OCR Scan |
FC106 T-35-21 47kfl) FC106 2SC3395, 4139MO | |
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Contextual Info: SGS-THOMSON [MOigœilLiera *® STU9NA60 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR PRELIMINARY DATA TYPE S TU 9N A60 V dss R dS oii Id 600 V < 0 .8 Q. 9 A • TYPICAL RDS(on) = 0.68 Cl . EFFICIENT AND RELAIBLE MOUNTING THROUGH CLIP . ± 30V GATE TO SOURCE VOLTAGE RATING |
OCR Scan |
STU9NA60 ax220â O-22C) Max220 | |
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Contextual Info: HEWLETT-PACKARD/ m C MP N T S blE D • 44475Û4 0 D D cl 7 b ö D2T AT-00500 UP to 4 GHz General Purpose Silicon Bipolar Transistor Chip HEW LETT PACKARD Chip Outline Features • 16.0 dBm typical Pi dB at 2.0 GHz • • • 11.5 dB typical Gi dB at 2.0 GHz |
OCR Scan |
AT-00500 | |
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Contextual Info: SGS-THOMSON [MOigœilLiera *® STP3NA90 STP3NA90FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR PRELIMINARY DATA TYPE STP3NA90 STP3NA90FI V dss R d S oii Id 90 0 V 90 0 V < 5 .3 Q. < 5 .3 Cl 3 A 1.9 A . • TYPICAL RüS(on) =4.4 £1 ± 30V GATE TO SOURCE VOLTAGE RATING |
OCR Scan |
STP3NA90 STP3NA90FI STP3NA90/FI ATT220 | |
TD62101F
Abstract: TD62103F TD62104F TD62105F
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OCR Scan |
350mA TB62103F TD62104F TD62105F TD62101F TD62101F TD62103F TD62104F TD62105F | |
2N7080Contextual Info: 2N7080 C T SiEconix JJm in c o rp o ra te d P-Channel Enhancement Mode Transistor TO -254A A Herm etic Package TOP VIEW o PRODUCT SUMMARY V BR DSS (V) rDS(ON) (Cl) •d (A) -20 0 0.500 -9 .5 1 DRAIN 2 SOURCE 3 GATE 1 2 3 Case Isolated ABSOLUTE MAXIMUM RATINGS (Tc = 25°C Unless Otherwise Noted)1 |
OCR Scan |
2N7080 -254A 2N7080 | |
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Contextual Info: TLP733FJLP734F TO SHIBA TOSHIBA PHOTOCOUPLER TI P7 3 3 F GaAs IRED & PHOTO-TRANSISTOR TI P73 4F Unit in mm OFFICE MACHINE SWITCHING PO W ER SUPPLY TJ.'TJJXT 3 7I QUQUT1? U 11U -1- T T . PI U7 QT 1y l l ? W UnAOViO P Iie> 4-e>U in f CL o r\l^ A + A /O optically coupled to a gallium arsenide infrared emitting diode in a six |
OCR Scan |
TLP733FJLP734F TLP733 TLP734. UL1577, | |
2SC3271 N
Abstract: 2SC3271 2SC3271 P R3307 Transistor 126m
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OCR Scan |
000S7b3 2SC3271 to-126m c33-07 Ta-25 2SC3271 N 2SC3271 2SC3271 P R3307 Transistor 126m | |
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Contextual Info: S G S -T H O M S O N [M O ig œ ilL iera « ® 7 80 80 STW NA STH NA FI 7 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR PRELIMINARY DATA TYP E STW 7N A80 STH 7N A80FI V dss R dS oii Id 800 V 800 V < 1.9 a. < 1.9 Q. 6.5 A 4 A • TYPICAL RüS(on) = 1.68 Cl |
OCR Scan |
A80FI | |
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Contextual Info: STW 9 NA60 S T H 9 N A 6 0 FI S G S -T H O M S O N [M O ig œ ilL ie ra *® N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYP E STW 9N A60 STH 9N A60FI • . . . . . . V dss RDS on Id 600 V 600 V < 0 .8 Q. < 0 .8 Q. 9.5 A 6.4 A TYPICAL RüS(on) = 0.69 Cl |
OCR Scan |
A60FI | |
PNP marking NY sot-223
Abstract: 2N4403 FZT749 TC55 TC57 TC572502ECT TC573002ECT TC573302ECT ZTX749 2N4403 diagram
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Original |
100mV 650mA FZT749 OT-23A TC57based D-81739 B73412SD* DS21437B-page PNP marking NY sot-223 2N4403 TC55 TC57 TC572502ECT TC573002ECT TC573302ECT ZTX749 2N4403 diagram | |
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Contextual Info: CMOS, Low Voltage RF/Video, SPST Switch ADG751 a FEATURES High Off Isolation –75 dB at 100 MHz –3 dB Signal Bandwidth 300 MHz +1.8 V to +5.5 V Single Supply Low On-Resistance 15 ⍀ Fast Switching Times tON Typically 9 ns tOFF Typically 3 ns Typical Power Consumption <0.01 W |
Original |
ADG751 ADG751 OT-23] D10943-0-8/12 | |
darlington pair transistor
Abstract: SN75469 EQUIVALENT DARLINGTON ARRAYS npn darlington array Darlington pair IC schematic 1N3064 SN75468 SN75469 ULN2003A ULN2004A
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Original |
SN75468, SN75469 SLRS023B 500-mA ULN2003A ULN2004A, SN75468 SN75469 darlington pair transistor SN75469 EQUIVALENT DARLINGTON ARRAYS npn darlington array Darlington pair IC schematic 1N3064 ULN2004A | |