TRANSISTOR - CL 100 Search Results

transistor TE 901 equivalent

Abstract: transistor TE 901 IGT6D11 IGT6E11
Contextual Info: IGT6D11,E11 Insulated Gate Bipolar Transistor 101 AMPERES 400, 500 VOLTS EQUIV. RdS ON = 0.27 Cl This IGT Transistor (Insulated Gate Bipolar Transistor) is a new type of MOS-gate turn on/off power switching device combining the best advantages of power MOSFETS and

55b6

Abstract: NDC631N
Contextual Info: National J u ly 1 9 9 6 Semiconductor NDC631N N-Channel Logic Level Enhancement Mode Field Effect Transistor Features General Description • 4.1 A, 20 V. R ^ , = 0.06 Cl @ V GS = 4.5 V Rds,on, = 0.0 75 Cl @ V GS =2.7 V. These N-Channel lo g ic level enhancem ent m ode

transistor wm

Abstract: OC172 AF266 BLV10 TRANSISTOR K 135 J 50 7Z77760
Contextual Info: PHILIPS INTERNATIONAL bSE D • 711Dö2b □ D b 5 7 clö T7S J IPHIN BLV10 V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated mobile, h.f. and v.h.f. transmitters with a nominal supply voltage of 13,5 V. The transistor is resistance stabilized and

BFQ42

Abstract: w7 transistor transistor w7 IRF 502 TRANSISTOR BLW29 transistor j18 Si NPN c25a f0pf philips bfq42
Contextual Info: P H IL IP S El b5E D INTERNATIONAL 711002b G0b2bD2 3 b l • P H I N BFQ42 V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended fo r use in cl ass-A, B or C operated mobile transmitters w ith a nominal supply voltage o f 13,5 V . The transistor is resistance stabilized and is

IBM vga registers

Abstract: PE-LD 22621 cirrus vga lg crt monitor rgb cable ERE9
Contextual Info: IC*- ' fl* CL-GD6340 Preliminary Data Sheet 'CIRRUS LOGIC FEATURES m 100% IBM VGA compatible at the display level • Supports SimulSCAN — displays on CRT and LCD simultaneously ■ Providesfull-colorVGAon8-or512-colorTFT Thin Film Transistor and other active-matrix or color

IRFD110

Abstract: D82BL2
Contextual Info: PUF IRFD110.111 P82BL2.K2 1.Cl AMPERES 100, 60 VOLTS RPS(ON = 0-6 A FIELD EFFECT POWER TRANSISTOR This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE’s advanced Power DMOS technology to achieve low on-resistance with excellent device rugged­

Contextual Info: MICRO E LE CT RONI CS LTD 41E D b G T I TÛ ê 0 0 0 0 cl ci2 3 MEHK T -3 3 "/^ 2N3055 NPN HIGH POWER SILICON PLANER TRANSISTOR MECHANICAL UUTblWE. GENERAL DESCRIPTION The 2N3055 is an NPN silicon planer power transistor. It is intended for use in class B

TRANSISTOR 434

Abstract: BUK856-450IX mj power transistor IEC134 T0220AB
Contextual Info: PHILIPS INTERNATIONAL bSE D • 7110fl2b QQL.M347 Philips Semiconductors Insulated Gate Bipolar Transistor Protected IGBT PARAMETER MIN. TYP. MAX. UNIT V CL CER VcEsat Ic Ptot Ecers Collector-emitter clamp voltage Collector-emitter on-state voltage Collector current (DC)

SMW45N10

Contextual Info: SMW45N10 erSiScanix ^LJP incorporated N-Channel Enhancement Mode Transistor TO-247 AD TOP VIEW PRODUCT SUMMARY V BR DSS 100 r DS(ON) •d (Cl) (A) 0.040 45 1 GATE 2 DRAIN 3 SOURCE 1 2 3 ABSOLUTE MAXIMUM RATINGS (Tc = 25°C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS

IRFP152

Abstract: IRFP153
Contextual Info: [MMiRi-lMS [FUT FIELD EFFECT POWER TRANSISTOR IRFP152,153 33 AMPERES 100, 60 VOLTS RqS ON = 0-08 Cl This series of N -C hannel Enhancem ent-m ode Power MOSFETs utilizes GE’s advanced Power DMOS technology to achieve low on-resistance with excellent device rugged­

Contextual Info: 2SA1362 LOW FREQUENCY POWER AMPLIFIER TRANSISTOR P -N -P transistor Marking 2SA1362 = AE PACKAGE O U TLIN E DETAILS ALL D IM EN SIO N S IN mm 3.0 ~2.B ~ Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 2« . 2.4 I TJ 3 J 1’.0 2 J Cl.89 0.60 0.40 ABSOLUTE MAXIMUM RATINGS

TOKO A 50 GTE

Abstract: NR421 88-108 rf amplifier TO82 TRANSISTOR
Contextual Info: SAC D I bSD1130 ODBSbGi NATL SEPIICON] {DISCRETE} 6 50 113 0 NATL SEMICOND, Z 28C DISCRETE) 35609 National CL Semiconductor CM *• OC NR421(NPN) VHF amplifier/FM converter transistor j features ■ 0.65pF typical feedback capacitance for excellent ■

Contextual Info: TOSHIBA TENTATIVE SSM3J05FU TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE SSM3J05FU POWER MANAGEMENT SWITCH U nit in mm HIGH SPEED SWITCHING APPLICATIONS 2.1 ± 0.1 • Sm all Package • Low on Resistance 1.2510.1 : Ron = 3.3 Cl Max. @ V q§

Contextual Info: TOSHIBA SSM3J01F TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE SSM3J01 F HIGH SPEED SWITCHING APPLICATIONS U nit in mm + 0.5 • Small Package • Low on Resistance • Low Gate Threshold Voltage : Ron = 0.4 Cl Max. (VQg : Ron = 0.6 O (Max.) (Vq s

Contextual Info: TOSHIBA SSM6J06FU TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE SSM6J06FU POWER MANAGEMENT SWITCH Unit in mm HIGH SPEED SWITCHING APPLICATIONS • Small Package • Low • Low Gate Threshold Voltage 2.1 ± 0.1 on Resistance : Ron = 0.5 Cl Max. V qs = —4 V

Contextual Info: TOSHIBA SSM3J01F TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE SSM3J01 F HIGH SPEED SWITCHING APPLICATIONS U nit in mm + 0.5 • Small Package • Low on Resistance • Low Gate Threshold Voltage : Ron = 0.4 Cl Max. (VQg : Ron = 0.6 O (Max.) (Vq s

Contextual Info: TOSHIBA SSM3J05FU TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE SSM3J05FU Unit in mm POWER MANAGEMENT SWITCH HIGH SPEED SWITCHING APPLICATIONS 2.1 ± 0.1 • • • Small Package Low on Resistance 1.2510.1 : Ron = 3.3 Cl Max. @VQg : Ron = 4.0 O Max. (@VGS

Contextual Info: TOSHIBA SSM3J05FU TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE SSM3J05FU Unit in mm POWER MANAGEMENT SWITCH HIGH SPEED SWITCHING APPLICATIONS 2 .1 1 0 .1 • • • Small Package Low on Resistance 1.25 ±0.1 +I oo : Ron = 3.3 Cl Max. @ Vgs

Contextual Info: TOSHIBA TENTATIVE SSM3K05FU TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE SSM3K05FU Unit in mm HIGH SPEED SWITCHING APPLICATIONS • • • 2.1 ± 0.1 Small Package Low on Resistance : Ron = 0.8 Cl Max. @VQg = 4 V : Ron = 1.2 O Max. (@VGS = 2.5 V)

FZJ 121

Contextual Info: rz j SGS-1H0MS0N Ä T # « » IL Iffir a « ! S TB 3 N A 80 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE V dss RDS on Id STB3NA80 800 V < 4.5 Cl 3.1 A . . . . . . . . TYPICAL RDS(on) = 3.5 Ü ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED

Contextual Info: TO SH IBA SSM3K05FU TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE SSM3K05FU HIGH SPEED SWITCHING APPLICATIONS • Small Package • Low on Resistance Unit in mm 2.1 ± 0.1 1.2510.1 Ron = 0.8 Cl Max. @VQg = 4 V : 3 : Ron = 1.2 O Max. (@VGS = 2.5 V)

digital transistor array

Abstract: marking 702 sot363
Contextual Info: SIEMENS BCR 169S PNP Silicon Digital Transistor Array • Switching circuit, inverter, interface circuit, driver circuit • Two galvanic internal isolated Transistors in one package • Built in bias resistor (R1=4.7kQ) Cl U 12 FI FI FI U lii ÜJ Type Marking Ordering Code Pin Configuration

Contextual Info: TOSHIBA SSM3J01F TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE SSM3J01 F HIGH SPEED SWITCHING APPLICATIONS • • • + 0.5 Small Package Low on Resistance : Ron = 0.4 Cl Max. (V qs = —4 V) : Ron = 0.6 il (Max.) (Vq s = -2 .5 V) LowGate Threshold Voltage

Contextual Info: TOSHIBA TENTATIVE SSM6J06FU TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE SSM6J06FU POWER MANAGEMENT SWITCH Unit in mm HIGH SPEED SWITCHING APPLICATIONS 2.1 • Small Package • Low on Resistance : Ron = 0.5 Cl Max. V qs = —4 V : Ron = 0.7 O Max. (Vq s = -2 .5 V)