AS35B05 Search Results

Contextual Info: Electrical Characteristics SIEM ENS 5 Electrical Characteristics Absolute Maximum Ratings Parameter Symbol Limit Values Unit Voltage on any pin with respect to ground Vs - 0.4 to V Am bient temperature under bias Ta O to 70 Storage temperature 7stg - 6 5 to 125

d1117

Abstract: AES02079 AEB02072
Contextual Info: S IEM EN S TrilithIC BTS 771 Overview Features • • • • • • • • • • • • • • • • • Quad switch driver Free configurable as bridge or quad-switch Optimized for DC motor management applications Ultra low Rds on @ 25 °C: High-side switch: typ. 85 mQ,

Contextual Info: ,•— SPP 70N10L Infineon t«c hnoIogi Preliminary Data SIPMOS Power Transistor Features Product Summary • N channel Drain source voltage ^DS • Enhancement mode Drain-Source on-state resistance • Avalanche rated Continuous drain current f ì DS onì 0.016 n

Contextual Info: SIEMENS BFR 181W NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12mA • f j = 8GHz F = 1.45dB at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Pin Configuration

Contextual Info: SIEMENS Extended Line Card Interface Controller ELIC 1 PEB 20550 PEF 20550 Features Switching EPIC®-1 • Non-blocking switch for 32 digital (e.g. ISDN) or 64 voice subscribers - Bandwidth 16, 32, or 64 kbit/s - Two consecutive 64-bit/s channels can be

Contextual Info: BSO 305N I nf ineon technologies Preliminary Data SIPMOS Small-Signal-Transistor Product Summary Features 30 V • Dual N Channel Drain source voltage ^DS • Enhancement mode Drain-Source on-state resistance • Avalanche rated Continuous drain current

Contextual Info: SIEMENS Standard EEPROM ICs SLx 24C08/16 8/16 Kbit 1024/2048 x 8 bit Serial CM O S-EEPRO M with I2C Synchronous 2-Wire Bus D atasheet 1998-07-27 ÖHBSbQS O l l W S TSS I SLx 24C08/16 Revision History: Current Version: 1998-07-27 Previous Version: 06.97 Page

Contextual Info: öfiD D • ä23SbQS 0 0 1 4 5 2 0 88D 1 4 5 2 8 D S « S IE G T"~ ? f S ? BUZ27 SIEMENS AKTIEN6ESELLSCHAF _ Main ratings N-Channel Drain-source voltage Continuous drain current Drain-source on-reslstance Description Case = 100 V V^is = 26 A

st smd marking code VU

Abstract: SMD TRANSISTOR MARKING 3B SMD HF transistor AEB01100 AED01098 AED010B7 AEP01099 AET01085 TLE4263G MARKING CODE SMD IC
Contextual Info: 823Sb05 DMfaSBB 115 SIEMENS 5-V Low -D rop V o ltage R eg u lato r TL E 4263 G P relim inary Data Bipolar 1C Features • • • • • • • • • • Output voltage tolerance < ± 2 % Low-drop voltage Very low standby current consumption Overtemperature protection

smd code book 13t

Abstract: relay ctk 1c AEP01617 AES01439 TLE5216G
Contextual Info: m ÖZ35L.05 OOÖlBbS 345 S IE M E N S Smart Quad Channel Low-Side Switch TLE 5216 G Prelim inary Data Features • Overload protection • Short circuit protection • Cascadeable serial diagnostic interface • Overvoltage protection • nC compatible input

NTC 4,7 Siemens

Abstract: HT 1200-4 S041E Q7101-H6615 siemens slic DBM01 qsicos-program S-041 S041 E siemens 58 295 84 pin chip
Contextual Info: S IE M E N S Four Channel Codec Filter SICOFP-4 PEB 2465 Preliminary Data 1.1 CMOS Features or PABX-channels Specification according to rele\ LSSGR recommendations Digital signal processing technique Programmable interface optimizf SLICs and transform er solutions

neosid v6

Abstract: OV56 AM2 Siemens neosid v7 V55D neosid CAP neosid 3.3 NEOSID nr. 9181 Diode LT 330D
Contextual Info: FS: 04/93 Pag« 2 SIEMENS AG IC-SPECIFICATION TUA 4300 G Table of Contents ONE CHIP CAR RADIO Differences to the last edition Page 1 Table of Contents Page 2 Functional Description, Application Page 3 . 4 Circuit Description Page 5 . 6 Block Diagram Page

Contextual Info: SIEMENS CGY94 GaAs MMIC • • • • • • Power amplifier for GSM or AMPS application Fully integrated 2 stage amplifier Operating voltage range: 2.7 to 6 V 2 W output power at 3.6 V Overall power added efficiency 46 % Input matched to 50 ohms, simple output match

Contextual Info: SIEMENS Standard EEPROM ICs SLx 24C08/16/P 8/16 Kbit 1024/2048 x 8 bit Serial CMOS-EEPROM with I2C Synchronous 2-Wire Bus and Page Protection Mode Data Sheet 1998-07-27 flEBSbDS D llT M T ? b ib SLx 24C08/16/P Revision History: Current Version: 1998-07-27

SAB82C206

Abstract: 82c206f 82C206
Contextual Info: 47E D • ÖE3SbOS 0031522 1 ■ SIEG SIEMENS AKTI ENGESELLSCHAF SAB 82C206 Integrated Peripheral Controller -r-'5'3r'b'S>-\5 P re lim in a ry • P rogram m able w a it states fo r the D M A cycle and internal register access • 8 MHz DMA clock • 16 Mbytes o f D M A address space

SIEMENS rwc 62

Abstract: V1005G 55B0
Contextual Info: SIEM EN S 3.3V 1M x 64-Bit EDO-DRAM Module 3.3V 1M x 72-Bit EDO-DRAM Module HYM 64V1005GU-50/-60/-70 HYM 72V1005GU-50/-60/-70 168pin unbuffered DIMM Module with serial presence detect Preliminary Inform ation 168 Pin JEDEC Standard, Unbuffered 8 Byte Dual In-Line M em ory Module

JB TRANSISTOR SMD MARKING CODE

Abstract: Q62702-S217
Contextual Info: BSS 296 Infineon t« c h n o lo g t« s SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level •^ G S th 3 = 0.8.2.0V Pin 1 VPTO5540 Pin 2 G (/> Type k> ^ D S (o n ) Package Marking 0.8 A 0.8 fl TO-92 SS 296 BSS 296 100 V

Contextual Info: SIEMENS Standard EEPROM ICs SLx 24C01/02/P 1/2 Kbit 1 2 8 /2 5 6 x 8 bit Serial CMOS-EEPROM with I2C Synchronous 2-Wire Bus and Page Protection Mode D atasheet 1998-07-27 fi535bQ5 DllTMMÔ TE? • \ SLx 24C01/02/P Revision History: Current Version: 1998-07-27

infineon tle hall

Contextual Info: Dynamic Differential Hall Effect Sensor 1C TLE 4923 Bipolar 1C Features Advanced performance Higher sensitivity Symmetrical thresholds High piezo resistivity Reduced power consumption South and north pole pre-induction possible AC coupled Digital output signal

Contextual Info: SIEMENS High-Performance 8-Bit CMOS Single-Chip Microcontroller SAB 80C515A / 83C515A-5 Preliminary SAB 83C515A-5 SAB 80C515A • • • • • • • • • • • • • • • • Microcontroller with factory mask-programmable ROM Microcontroller for external ROM

Contextual Info: SIEMENS BCR 08PN NPN/PNP Silicon Digital Tansistor Array • Switching circuit, inverter, interface circuit, drive circuit • Two galvanic internal isolated NPN/PNP Transistor in one package • Built in bias resistor (R1=2.2kD, R2=47kiî) Cl Tape loading orientation

Contextual Info: FS: 04/93 Page 1 SIEMENS AG IC-SPECIFICATION TDA 4321 XS Table of Contents FM-IF IC with counter output, analog STS, field strength indicator, noise detector and mute setting Table of Contents Page 1 Functional Description, Application Page 2 Circuit Description

Contextual Info: SIEMENS 3.3V 4M x 64-Bit EDO-DRAM Module 3.3V 4M x 72-Bit EDO-DRAM Module HYM64V4005GU-50/-60/-70 HYM64V4045GU-50/-60/-70 HYM72 V4005G U-50/-60/-70 HYM72V4045GU-50/-60/-70 168pin unbuffered DIMM Module with serial presence detect Preliminary Information •

12 AX 7 WA / ECC 83

Contextual Info: SIEMENS 4M x 72-Bit EDO-DRAM Module ECC-Module 168 pin buffered DIMM Module HYM 72V4005GS-50/-60 Advanced Information • 168 Pin JEDEC Standard, buffered 8 Byte Dual In-Line Memory Module for PC main memory applications • 1 bank 4M x 72 organization • Optimized for ECC applications