823SB05 Search Results

st smd marking code VU

Abstract: SMD TRANSISTOR MARKING 3B SMD HF transistor AEB01100 AED01098 AED010B7 AEP01099 AET01085 TLE4263G MARKING CODE SMD IC
Contextual Info: 823Sb05 DMfaSBB 115 SIEMENS 5-V Low -D rop V o ltage R eg u lato r TL E 4263 G P relim inary Data Bipolar 1C Features • • • • • • • • • • Output voltage tolerance < ± 2 % Low-drop voltage Very low standby current consumption Overtemperature protection

Q67006-A9171

Abstract: hall current sensor 3A 4921-3U AEP01694 TLE4921-3U siemens magnetic sensors Siemens Hall AEA01259 AED01707 AED01709
Contextual Info: SIEM ENS Dynamic Differential Hall Effect Sensor 1C TLE4921-3U Bipolar IC Features • • • • • • • • • • • • • • • Advanced performance High sensitivity Symmetrical thresholds High piezo resistivity Reduced power consumption South and north pole pre-induction possible

Contextual Info: SIEMENS 3.3 V 2M x 64-Bit EDO-DRAM Module 3.3 V 2M x 72-Bit EDO-DRAM Module 168 pin unbuffered DIMM Module with serial presence detect HYM 64V2005GU-50/-60 HYM 72V2005GU-50/-60 Advanced Inform ation • 168 Pin JEDEC Standard, unbuffered 8 Byte Dual In-Line Memory Module

nf950

Abstract: transistor BF 37 transistor BF 236 TRANSISTOR 2SC 950 TRANSISTOR JC 539 2sc 1948 a Q62702-F553 transistor code mark NF
Contextual Info: 25C D • 523SbQS QQQMS3‘i 4 Wi SI ZG f PNP Silicon Planar Transistor ' SIEMENS AKTIEN6ESELLSCHAF >39 BF767 0- BF 767 is a PNP silicon planar transistor including passivated surface in TO 2 36 plastic package 23 A 3 DIN 41869 . The transistor is particularly suitable for use in low-noise,

DIODE S45

Contextual Info: ÖÖD D • ÔE3SbQ5 0015074 ö H S I E 6 88D 15074 D BUZ 361 SIEMENS AKTIENûESELLSCHAF Main ratings N-Channel a 800 V Drain-source voltage Vos = 2,9 A Continuous drain current h Drain-source on-resistance ^DS on 4,5 a Description FREDET with fast-recovery reverse diode, N-channel, enhancement mode