TPV8100B Search Results

Contextual Info: MOTOROLA Order this document by TPV8100B/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor TPV8100B The TPV8100B is designed for output stages in band IV and V TV transmitter amplifiers. It incorporates high value emitter ballast resistors, gold metallizations and offers a high degree of reliability and ruggedness.

TPV8100B

Contextual Info: TPV8100B TPV8100B NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI TPV8100B is Designed for Transmitter Output Stages Covering TV Band IV and V, Operating at 28 V. FEATURES INCLUDE: • Internal Input, Output Matching • Common Emitter Configuration • Gold Metalization

TPV8100B

Abstract: 6 channel rf transmitter circuit ATC 100A
Contextual Info: MOTOROLA Order this document by TPV8100B/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor TPV8100B The TPV8100B is designed for output stages in band IV and V TV transmitter amplifiers. It incorporates high value emitter ballast resistors, gold metallizations and offers a high degree of reliability and ruggedness.

BLV861

Abstract: TPV8100B
Contextual Info: TPV8100B BLV861 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI BLV861 is Designed for Transmitter Output Stages Covering TV Band IV and V, Operating at 28 V. FEATURES INCLUDE: • Internal Input, Output Matching • Common Emitter Configuration • Gold Metalization

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TPV8100B The RF Line NPN Silicon RF P o w er TVansistor The TPV8100B is designed for output stages in band IV and V TV transmitter amplifiers. It incorporates high value emitter ballast resistors, gold metalliza­ tions and offers a high degree of reliability and ruggedness.

wireless video transmitter circuit

Abstract: Wireless video IC circuit j682
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor TPV8100B The TPV8100B is designed for output stages in band IV and V TV transmitter amplifiers. It incorporates high value emitter ballast resistors, gold metallizations and offers a high degree of reliability and ruggedness.

TPV8100B

Abstract: tpv8100 414 rf transistor j682
Contextual Info: MOTOROLA Order this document by TPV8100B/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor TPV8100B The TPV8100B is designed for output stages in band IV and V TV transmitter amplifiers. It incorporates high value emitter ballast resistors, gold metallizations and offers a high degree of reliability and ruggedness.

TPV8100B

Contextual Info: MOTOROLA S E M IC O N D U C T O R TECHNICAL DATA TPV8100B Advance Information The RF Line UHF Linear Power Transistor 100W — 470 to 860 MHz UHF LINEAR POWER TRANSISTOR . . d e sign e d for output sta ge s in Band IV & V T V transmitter am plifiers. Internal m atch­

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silico n RF Pow er Transistor The TPV8100B is designed for output stages in band IV and V TV transmitter amplifiers. It incorporates high value emitter ballast resistors, gold metalliza­ tions and offers a high degree of reliability and ruggedness.

chip die npn transistor

Contextual Info: MOTOROLA Order this document by TPV8100B/D SEMICONDUCTOR TECHNICAL DATA TPV8100B The TPV8100B is designed for output stages in band IV and V TV transmitter amplifiers. It incorporates high value emitter ballast resistors, gold metallizations and offers a high degree of reliability and ruggedness.

b 1367 rf transistor

Abstract: 28V1001
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Pow er Transistor The TPV8100B is designed for output stages in band IV and V TV transmitter amplifiers. It incorporates high value emitter ballast resistors, gold metalliza­ tions and offers a high degree of reliability and ruggedness.

tpv8100

Abstract: TPV8100B
Contextual Info: TPV8100B TPV8100 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI TPV8100 is Designed for Transmitter Output Stages Covering TV Band IV and V, Operating at 28 V. FEATURES INCLUDE: PACKAGE STYLE .438X.450 4LFL • Internal Input, Output Matching • Common Emitter Configuration

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN S ilic o n RF P o w e r T ra n sis to r The TPV8100B is designed for output stages in band IV and V TV transm itter amplifiers. It incorporates high value em itter ballast resistors, gold metalliza­ tions and offers a high degree of reliability and ruggedness.

MC68B21CP

Abstract: xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N
Contextual Info: SG379/D REV 7 Semiconductor Products Sector NORTH AMERICA SALES AND DISTRIBUTION PRICE LIST THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION – Please see General Information Section 1.3 EFFECTIVE DATE: JANUARY 10, 1998 General Information 1 Cross References

Motorola transistors MRF 947

Abstract: trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp
Contextual Info: Selector Guide 1 Discrete Transistor Data Sheets Amplifier Data Sheets Monolithic Integrated Circuit H Data Sheets mm Case Dimensions Cross Reference and Sales Offices 6 M MOTOROLA RF Device Data This publication presents technical information for the several product families that

2N4427 equivalent bfr91

Abstract: bfr90 equivalent 2N5503 MRA1600-30 TPV-595A 2N3553 equivalent MRF477 equivalent MRA0500-19L 2N6084 equivalent MOTOROLA TRANSISTOR MRF239
Contextual Info: RF Power TMOS FETs Motorola RF Power MOSFETs, trademark TMOS , are constructed using a planar process to enhance manufacturing repeatability. They are N-channet field effect transistors with an oxide insulated gate which controls vertical current flow. Compared with bipolar transistors, RF Power FETs exhibit higher gain, higher input impedance, enhanced therm al stability

MRF648

Abstract: TPV3100 TPV-3100 TP9383 SD1393 MRF238 MOTOROLA MRF188 TP9380 mrf10500 mrf422
Contextual Info: June 1999 ST CROSS REFERENCE WITH MOTOROLA INDUSTRY PART NUMBER ST REPLACEMENT PREFERENCE INDUSTRY PART NUMBER ST REPLACEMENT PREFERENCE 2N5944 SD1134 MRF859 SD1423 2N5945 2N5946 2N6082 2N6084 2N6439 MHW912 MHW914 MHW916 MRA1600-2 MRF134 MRF136 MRF136Y MRF137

MRF648

Abstract: TPV3100 2SC2897 macom TP3034 SD1393 TP3008 tp9383 transistor 2sC636 MRF255 equivalent
Contextual Info: Cross References June 1999 RF PRODUCTS P/N CROSS REFERENCE VENDOR NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC

2SC636

Abstract: 2sc635 MHW820-1 TP3008 2SC2897 SD1477 2sc2652 TP3034 2SC1804 SD1470
Contextual Info: POWER RF CROSS REFERENCE INDUST RY STANDARD 2SC1257 2SC1258 2SC1259 2SC1605A 2SC1729 2SC1804 2SC1805 2SC1946 2SC1946A 2SC1967 2SC1968A 2SC2082 2SC2100 2SC2101 2SC2102 2SC2103A 2SC2105 2SC2181 2SC2282 2SC2290 2SC2420 2SC2508 2SC2510 SC2628 2SC2629 2SC2630 2SC2642

stripline directional couplers

Abstract: MRFP36030 MRF5S9080NB NONLINEAR MODEL LDMOS MRF377HR5 Product Selector Guide MRF1511NT1 ESD MC13820 MRF377HR3 MRF6S9045NBR1
Contextual Info: RF and IF Quarter 3, 2005 SG1009Q32005 Rev 0 What’s New! Market Product GSM/GPRS Cellular MMM6025 Cellular, GPS, ISM MC13820 TV Broadcast MRF377HR3, MRF377HR5 900 MHz Cellular Base Station MRF6S9045NR1, MRF6S9045NBR1, MRF6S9060NR1, MRF6S9060NBR1, MRF6S9125NR1, MRF6S9125NBR1, MRF6S9130HR3, MRF6S9130HSR3,

2a258 transistor

Abstract: Fuji Electric tv schematic diagram smd transistor WB3 VHF FM PLL schematic mc145152 Motorola transistor smd marking codes MARK 176 SOT363 RF Note AR164, Motorola RF Device Data, Volume II, D tip off 0401 mosfet transistor cordless phone Transceiver IC semiconductors cross index
Contextual Info: Device Data Book WIRELESS RF PRODUCT DEVICE DATA ireless DL110/D Rev. 13 3/2002 2.5G 3G Contents at a Glance Wireless RF Product Device Data Data Sheet Device Index Alphanumeric . . . . . . . . . . . . . . . . . . . . . . . . ix End of Life Product Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . xii

MLED96

Abstract: BRX49 SCR MRF549 ATV5030 MRF660 MRF548 mmbr2857lt1 CR2428 MPF3822 MRF548 MOTOROLA
Contextual Info: ALPHANUMERIC INDEX DEVICE ATV5030 ATV5090B ATV6031 ATV6060H ATV7050 BAL99LT1 BAS16LT1 BAS21LT1 BAV70LT1 BAV74LT1 BAV99LT1 BAW56LT1 BC107,A,B BC109C BC177B BC182 BC212 BC237B BC239 BC307B BC327 BC328 BC337 BC338 BC368 BC369 BC373 BC489 BC490 BC517 BC546,A,B

chw marking sot23

Abstract: sps 1951 transistor trimmer electron 3296 bw 9028 transistor smd marking BA rn ph 4148 zener diode
Contextual Info: Contents at a Glance VOLUME I Device Index Alphanumeric . . viii Chapter One Selector G u id e . 1.1-1 Chapter Two RF Monolithic Integrated C ircu

MHW721A2

Abstract: 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503
Contextual Info: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide Amplifier Data Sheets 5 Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions 8 Cross Reference and Sales Offices 9 MOTOROLA RF DEVICE DATA