TPCS8213 Search Results

TPCS8213 Datasheets (1)

Filter by Manufacturer

Toshiba

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
TPCS8213		Toshiba	Lithium Ion Battery Applications	Original	PDF	209.14KB	7

TPCS8213 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
TPCS8213 Contextual Info: TPCS8213 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type U-MOSⅣ TPCS8213 Lithium Ion Battery Applications Unit: mm • Small footprint due to a small and thin package • Low drain-source ON-resistance: RDS (ON) = 8.4 mΩ (typ.) • High forward transfer admittance: \|Yfs\| = 13 S (typ.)	Original	tpcs8213	PDF
TPCS8213 Contextual Info: TPCS8213 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type U-MOSⅣ TPCS8213 Lithium Ion Battery Applications Unit: mm • Small footprint due to a small and thin package • Low drain-source ON-resistance: RDS (ON) = 8.4 mΩ (typ.) • High forward transfer admittance: \|Yfs\| = 13 S (typ.)	Original	tpcs8213	PDF
TPCS8213 Abstract: S8213 Contextual Info: TPCS8213 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type U-MOSⅣ TPCS8213 Lithium Ion Battery Applications Unit: mm • Small footprint due to a small and thin package • • Low drain-source ON-resistance: R DS (ON) = 8.4 mΩ (typ.) High forward transfer admittance: \|Yfs \| = 13 S (typ.)	Original	tpcs8213 s8213	PDF
S8213 Abstract: TPCS8213 Contextual Info: TPCS8213 東芝電界効果トランジスタシリコンNチャネルMOS形 U-MOSⅣ TPCS8213 ○ リチウムイオン 2 次電池用 • 単位: mm 小型薄型で実装面積が小さい。 • オン抵抗が低い。 : RDS (ON) = 8.4 mΩ (標準)	Original	tpcs8213 20070701-ja s8213	PDF
TPCS8213 Contextual Info: TPCS8213 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type U-MOSⅣ TPCS8213 Lithium Ion Battery Applications Unit: mm • Small footprint due to a small and thin package • Low drain-source ON-resistance: RDS (ON) = 8.4 mΩ (typ.) • High forward transfer admittance: \|Yfs\| = 13 S (typ.)	Original	tpcs8213	PDF
5252 F 1009 4-pin Abstract: TPC 8028 MARKING S3H SOT363 TK8A50D equivalent tk6a65d equivalent 2SK4112 TPCA8030-H toshiba laptop charging CIRCUIT diagram TK80A08K3 TPCA*8025 Contextual Info: 2009-5 PRODUCT GUIDE MOSFETs SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes . 4	Original	5252 f 1009 4-pin tpc 8028 marking s3h sot363 tk8a50d equivalent +6tk6a65d equivalent 2sk4112 tpca8030-h toshiba laptop charging circuit diagram tk80a08k3 tpca*8025	PDF
2SK2056 Abstract: 2SK1603 2sk1603 datasheet TOSHIBA "ULTRA HIGH SPEED" DIODE 1A transistor 2SK1603 2SK3561 equivalent 2SK2915 EQUIVALENT 1045y 2SK3569 equivalent 2SK1078 Contextual Info: O W Y.C M.T .1 O W C W 2005-3 WW .100Y. M.T O W WW .100Y.C M.TW .TW M WW 00Y.CO .TW .CO .TW Y W M .1 W.1 Y.COM W WW 00Y.CO .TW W W W .T 00 W.1 Y.COM W W.1 Y.COM W W W W .T W 00 W M.T .100 W.1 Y.COM W M.T O W O W C . .C W WW .100Y .TW M.T .100 .TW 00Y M O 1	Original	bce0017b 2sk2056 2sk1603 2sk1603 datasheet +7toshiba "ultra high speed" diode 1a transistor 2sk1603 2sk3561 equivalent 2sk2915 equivalent 1045y 2sk3569 equivalent 2sk1078	PDF
2SK3567 equivalent Abstract: 2SK3569 equivalent TPCA*8023 TK8A50D equivalent 2SK2056 2SK3878 equivalent tpca8023 2SK941 equivalent 2SK3561 equivalent 2SK1603 Contextual Info: 2008-9 PRODUCT GUIDE Power MOSFETs s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g Toshiba’s power MOSFET devices meet the needs of a wide range of ultra-high-density applications. 1.Features and Structure. 2	Original	bce0017f e-28831 bce0017g 2sk3567 equivalent +92sk3569 equivalent tpca*8023 tk8a50d equivalent 2sk2056 2sk3878 equivalent tpca8023 2sk941 equivalent 2sk3561 equivalent 2sk1603	PDF
tpc8118 Abstract: SVI 2004 A toshiba f5d tpc8026 tpc8109 oks2c toshiba f5b TPC8028 MARKING TPC8107 SOP8 MOSFET MARKING STP Contextual Info: Power MOSFETs 低耐圧低Ronシリーズ 2007年 2月 Copyright 2007, Toshiba Corporation. 低Ron 低耐圧U-MOSの技術トレンド 30 2 RonA (mOhmmm ) 25 20 15 10 Pch Nch 5 Pch IV Nch III Pch V Nch IV Pch VI Nch V or VI 2007年 2月 2 リチウムイオン電池保護回路用MOSFETトレンドマップ	Original	tpcm8001-h tpcm8003-h tpcm8002-h 2q/2007 +12tpcm8102 1q/2007 tpc8118 svi 2004 a toshiba f5d tpc8026 tpc8109 oks2c toshiba f5b tpc8028 marking tpc8107 sop8 mosfet marking stp	PDF
2SK4207 Abstract: to220sis TPCA*8023 tk80A08K3 TPC8119 TK40A08K3 2SK4112 ssm3j16fs 2sk3568 TPC8A03 Contextual Info: 製品カタログ 2009-9 東芝半導体製品カタログ MOSFET SEMICONDUCTOR h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / C O N T E N T S 1 特長と構造. 3	Original	bcj0082b bcj0082a 2sk4207 to220sis +8tpca*8023 tk80a08k3 tpc8119 tk40a08k3 2sk4112 ssm3j16fs 2sk3568 tpc8a03	PDF
transistor bc 245 Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122 Contextual Info: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243	Original	sc-43 2sc1815 tps615 tps616 +11tps610 transistor bc 245 247y smd transistor h2a gt30g122 gt35j321 gt45f123 marking smd pnp transistor h2a gt45f122 gt45f122 series gt30f122	PDF
2SK3566 equivalent Abstract: 2SK3562 equivalent 2SK3561 equivalent 2SK3878 equivalent 2SK3568 equivalent 2SK3911 equivalent 2SK941 equivalent tpc8118 equivalent replacement tpc8118 2SK3767 equivalent Contextual Info: 2007-12 PRODUCT GUIDE Power MOSFETs Toshiba’s power MOSFET devices meet the needs of a wide range of ultra-high-density applications. 1.Features and Structure. 2	Original	bce0017e s-167 bce0017f 2sk3566 equivalent +92sk3562 equivalent 2sk3561 equivalent 2sk3878 equivalent 2sk3568 equivalent 2sk3911 equivalent 2sk941 equivalent tpc8118 equivalent replacement tpc8118 2sk3767 equivalent	PDF
tpc8118 equivalent replacement Abstract: SSM3J307T Zener diode smd 071 A01 Contextual Info: 2009-9 PRODUCT GUIDE MOSFETs SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes . 4	Original	bce0082a tpc8118 equivalent replacement ssm3j307t zener diode smd 071 a01	PDF
2sk4110 Abstract: 2SK4106 2SK4111 2SK3561 equivalent 2sk3797 equivalent 2SK2996 equivalent 2SK2843 equivalent 2sK2961 equivalent 2SK4112 2SK3799 equivalent Contextual Info: 2007-3 PRODUCT GUIDE Power MOSFETs 1.Features and Structure. 2 2.New Power MOSFET Products . 3	Original	bce0017d s-167 bce0017e 2sk4110 +92sk4106 2sk4111 2sk3561 equivalent 2sk3797 equivalent 2sk2996 equivalent 2sk2843 equivalent 2sk2961 equivalent 2sk4112 2sk3799 equivalent	PDF

GT45F122 Abstract: TK13A60U GT30F123 2SK4207 GT30J124 IGBT GT30F123 gt30f122 GT30G122 2SC5471 IGBT GT30J124 Contextual Info: 東芝半導体製品総覧表 2009 年 7 月版トランジスタバイポーラ小信号トランジスタ接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ高周波バイポーラ小信号トランジスタ	Original	scj0004o sc-43 2sc1815 2sc732tm +142sc1959 2sa1015 2sc2240 2sa970 gt45f122 tk13a60u gt30f123 2sk4207 gt30j124 igbt gt30f123 gt30f122 gt30g122 2sc5471 igbt gt30j124	PDF
GT30J124 Abstract: smd transistor h2a gt45f122 TPCP8R01 GT30F123 2sc1815 smd type smd marking 8L01 h2a smd 2SC5471 2sc5200 amplifiers circuit diagram Contextual Info: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs	Original	sce0004i sc-43 2sc1815 gt30j124 +9smd transistor h2a gt45f122 tpcp8r01 gt30f123 2sc1815 smd type smd marking 8l01 h2a smd 2sc5471 2sc5200 amplifiers circuit diagram	PDF
45F122 Abstract: GT30f124 30g122 30f124 IGBT GT30F124 GT30J124 GT45F122 GT30F123 TPCA8023 GT50N322 Contextual Info: 東芝半導体製品総覧表 2010 年 1 月版トランジスタバイポーラ小信号トランジスタ接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ高周波バイポーラ小信号トランジスタ	Original	scj0004o sc-43 2sc1815 2sc732tm +142sc1959 2sa1015 2sc2240 2sa970 45f122 gt30f124 30g122 30f124 igbt gt30f124 gt30j124 gt45f122 gt30f123 tpca*8023 gt50n322	PDF