S8213 Search Results

TPCS8213

Contextual Info: S8213 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type U-MOSⅣ S8213 Lithium Ion Battery Applications Unit: mm • Small footprint due to a small and thin package • Low drain-source ON-resistance: RDS (ON) = 8.4 mΩ (typ.) • High forward transfer admittance: |Yfs| = 13 S (typ.)

Contextual Info: SPICE Device Model SUD23N06-31 Vishay Siliconix N-Channel 60-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range

SiR466DP

Abstract: SiR466
Contextual Info: SPICE Device Model SiR466DP Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range

sir472

Abstract: sir472dp vishay 138
Contextual Info: SPICE Device Model SiR472DP Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range

SiR468DP

Contextual Info: SPICE Device Model SiR468DP Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range

Dexerials

Abstract: S-8213AAB-I6T1U S-8213 S-8213AAH-I6T1U S-8213AAC-I6T1U I6T1U
Contextual Info: S-8213 Series www.sii-ic.com BATTERY PROTECTION IC FOR 2-SERIAL / 3-SERIAL CELL PACK SECONDARY PROTECTION Rev.1.1_00 Seiko Instruments Inc., 2012-2013 The S-8213 Series is used for secondary protection of lithium-ion rechargeable batteries, and incorporates a high-accuracy

TPCS8213

Contextual Info: S8213 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type U-MOSⅣ S8213 Lithium Ion Battery Applications Unit: mm • Small footprint due to a small and thin package • Low drain-source ON-resistance: RDS (ON) = 8.4 mΩ (typ.) • High forward transfer admittance: |Yfs| = 13 S (typ.)

sony chemical fuse

Abstract: battery protection ic for 2-serial
Contextual Info: S-8213 Series www.sii-ic.com BATTERY PROTECTION IC FOR 2-SERIAL / 3-SERIAL CELL PACK SECONDARY PROTECTION Rev.1.0_00 Seiko Instruments Inc., 2012 The S-8213 Series is used for secondary protection of lithium-ion rechargeable batteries, and incorporates a high-accuracy

handbook of shipboard electromagnetic shielding practices

Abstract: ASTM-A-753 MIL-B-857 MIL-STD-463 s41 hall effect sensor s41 hall effect sensor s41 s41 hall effect sensor S9300-AW-EDG-010 Bendix synchro control transformer MIL-C-915
Contextual Info: S9407-AB-HBK-010 Revision 2 HANDBOOK OF SHIPBOARD ELECTROMAGNETIC SHIELDING PRACTICES This document supersedes S9407-AB-HBK-010, Revision 1 date published 30 September 1989 APPROVED FOR PUBLIC RELEASE; DISTRIBUTION IS UNLIMITED Published by Direction of Commander, Naval Sea Systems Command

SiR496DP

Contextual Info: SPICE Device Model SiR496DP Vishay Siliconix N-Channel 20-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range

S-82130

Abstract: mosfet SPICE MODEL SiA534DJ
Contextual Info: SPICE Device Model SiA534DJ Vishay Siliconix N- and P-Channel 20-V D-S MOSFET CHARACTERISTICS • N- and P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range

TPCS8213

Abstract: S8213
Contextual Info: S8213 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type U-MOSⅣ S8213 Lithium Ion Battery Applications Unit: mm • Small footprint due to a small and thin package • • Low drain-source ON-resistance: R DS (ON) = 8.4 mΩ (typ.) High forward transfer admittance: |Yfs | = 13 S (typ.)

SiR472DP

Abstract: 82137
Contextual Info: SPICE Device Model SiR472DP Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range

SiR466DP

Abstract: mosfet SPICE MODEL S-82135 64330
Contextual Info: SPICE Device Model SiR466DP Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range

S8213

Abstract: TPCS8213
Contextual Info: S8213 東芝電界効果トランジスタ シリコンNチャネルMOS形 U-MOSⅣ S8213 ○ リチウムイオン 2 次電池用 • 単位: mm 小型薄型で実装面積が小さい。 • オン抵抗が低い。 : RDS (ON) = 8.4 mΩ (標準)

sir464

Abstract: SiR464DP mosfet SPICE MODEL
Contextual Info: SPICE Device Model SiR464DP Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range

MDM 6600

Abstract: mt 1389 de 2061 D nikko AR9344 bosch AL 1115 CV denso alternator 7805/3A bosch al 1450 dv CATERPILLAR 207-1560 ba 4918
Contextual Info: No. 9800-OERF-007 Replaces • Remplace • Substituye No. 9800-OERF-005 Dixie Electric Ltd. OEM CROSS REFERENCE GUIDE DE RÉFÉRENCE GUÍA DE REFERENCIA 2007 Index • Índice AGCO .1

sir468

Contextual Info: SPICE Device Model SiR468DP Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range

S-82136

Abstract: SiR496DP mosfet SPICE MODEL spice model AN
Contextual Info: SPICE Device Model SiR496DP Vishay Siliconix N-Channel 20-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range

SiR464DP

Contextual Info: SPICE Device Model SiR464DP Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range

Contextual Info: SPICE Device Model SiB452DK Vishay Siliconix N-Channel 190-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range

56 pF CH

Abstract: S-82130
Contextual Info: SPICE Device Model SiA534DJ Vishay Siliconix N- and P-Channel 20-V D-S MOSFET CHARACTERISTICS • N- and P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range

SiR462DP

Abstract: sir462 S-82133
Contextual Info: SPICE Device Model SiR462DP Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range

Contextual Info: SPICE Device Model SUD23N06-31 Vishay Siliconix N-Channel 60-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range