SIR462DP Search Results
SIR462DP Datasheets (1)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| SIR462DP-T1-GE3 | Vishay Siliconix | FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 30A PPAK 8SOIC | Original | 9 |
SIR462DP Price and Stock
Vishay Intertechnologies SIR462DP-T1-GE3Trans MOSFET N-CH 30V 30A 8-Pin PowerPAK SO EP T/R |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SIR462DP-T1-GE3 | 51,000 | 3,000 |
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SIR462DP-T1-GE3 | Ammo Pack | 1 |
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| SIR462DP-T1-GE3 | Tape & Reel | 52 Weeks | 3,000 |
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SIR462DP-T1-GE3 | 13,025 |
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SIR462DP-T1-GE3 | 51,000 | 52 Weeks | 3,000 |
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SIR462DP-T1-GE3 | Cut Tape | 530 | 1 |
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| SIR462DP-T1-GE3 | Tape & Reel | 530 | 100 |
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| SIR462DP-T1-GE3 | Tape & Reel | 3,000 |
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| SIR462DP-T1-GE3 | Cut Tape | 3,000 |
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SIR462DP-T1-GE3 | Reel | 24,000 | 3,000 |
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SIR462DP-T1-GE3 | 14,673 | 1 |
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| SIR462DP-T1-GE3 | 4,321 |
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SIR462DP-T1-GE3 | 54,609 |
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| SIR462DP-T1-GE3 | 11,738 |
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| SIR462DP-T1-GE3 | 11,738 |
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| SIR462DP-T1-GE3 | 1,528 |
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SIR462DP-T1-GE3 | 3,000 |
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SIR462DP-T1-GE3 | 54 Weeks | 3,000 |
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SIR462DP-T1-GE3 | 53 Weeks | 3,000 |
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Vishay Intertechnologies SIHF22N60E-E3MOSFETs RECOMMENDED ALT SIR4 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SIHF22N60E-E3 | Reel | 1,000 |
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Vishay Siliconix SIR462DP-T1-GE318.9 A, 30 V, 0.0079 OHM, N-CHANNEL, SI, POWER, MOSFET |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SIR462DP-T1-GE3 | 400 |
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Others SIR462DP-T1-GE3INSTOCK |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SIR462DP-T1-GE3 | 3,000 |
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SIR462DP Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: SiR462DP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.0079 at VGS = 10 V 30a 0.010 at VGS = 4.5 V 30a • Halogen-free According to IEC 61249-2-21 • TrenchFET Power MOSFET • 100 % Rg Tested • 100 % UIS Tested |
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sir462dpsir462dp-t1-ge32011/65/eu2002/95/ec+1 | |
151bcContextual Info: SiR462DP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.0079 at VGS = 10 V 30a 0.010 at VGS = 4.5 V 30a • Halogen-free According to IEC 61249-2-21 • TrenchFET Power MOSFET • 100 % Rg Tested • 100 % UIS Tested |
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sir462dpsir462dp-t1-ge311-mar-11151bc | |
SIR462DP-T1-GE3
Abstract: SIR462DP-t1 SIR462
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sir462dpsir462dp-t1-ge32011/65/eu2002/95/ec+3 | |
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Contextual Info: SiR462DP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.0079 at VGS = 10 V 30a 0.010 at VGS = 4.5 V 30a • Halogen-free According to IEC 61249-2-21 • TrenchFET Power MOSFET • 100 % Rg Tested • 100 % UIS Tested |
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sir462dpsir462dp-t1-ge32002/95/ec2011/65/eu+2 | |
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Contextual Info: SPICE Device Model SiR462DP www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C |
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sir462dp2002/95/ec2011/65/eujs709a+1 | |
SiR462DPContextual Info: SPICE Device Model SiR462DP Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range |
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sir462dp18-jul-08 | |
SiR462DP
Abstract: SiR462DP-T1-GE3
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sir462dpsir462dp-t1-ge318-jul-08 | |
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Contextual Info: SiR462DP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.0079 at VGS = 10 V 30a 0.010 at VGS = 4.5 V 30a • Halogen-free According to IEC 61249-2-21 • TrenchFET Power MOSFET • 100 % Rg Tested • 100 % UIS Tested |
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sir462dpsir462dp-t1-ge32002/95/ec2011/65/eu+2 | |
sir462
Abstract: AN609 SiR462DP
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sir462dpan60930-jul-08sir462 | |
SiR462DP-T1-GE3
Abstract: SiR462DP sir462
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sir462dpsir462dp-t1-ge311-mar-11sir462 | |
sir462
Abstract: SIR462DP-T1-GE3 SiR462DP
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sir462dpsir462dp-t1-ge318-jul-08sir462 | |
SiR462DP
Abstract: sir462 S-82133
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sir462dps-8213315-sep-08sir462 | |
MIC2150
Abstract: CRCW06031001FKEA vj0603a181 FZ 87 1500 6.3V GRM21BR61C106KE15L X7R 2kv murata
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mic2150/mic2151mic2150/1500khzmic2150+8 | |
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Contextual Info: LT3741 High Power, Constant Current, Constant Voltage, Step-Down Controller FEATURES n n n n n n n n n n DESCRIPTION Control Pin Provides Accurate Control of Regulated Output Current ±1.5% Voltage Regulation Accuracy ±6% Current Regulation Accuracy 6V to 36V Input Voltage Range |
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lt374120-pinihlp5050fder8rzm01si7884bdp+5 | |
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sir462Contextual Info: DEMO MANUAL DC1625A LTC4227-1/LTC4227-2/ LTC4227-3/LTC4227-4 Dual Ideal Diode and Single Hot Swap Controller Description Demonstration circuit 1625A is intended to demonstrate performance of the LTC4227-1/LTC4227-2/LTC4227-3/ LTC4227-4 dual ideal diode and Hot Swap controller. Each |
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dc1625altc4227-1/ltc4227-2/ltc4227-3/ltc4227-4ltc4227-1/ltc4227-2/ltc4227-3/+5 | |
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Contextual Info: LT3741/LT3741-1 High Power, Constant Current, Constant Voltage, Step-Down Controller FEATURES DESCRIPTION Control Pin Provides Accurate Control of Regulated Output Current n ±1.5% Voltage Regulation Accuracy n ±6% Current Regulation Accuracy n 6V to 36V Input Voltage Range |
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lt3741/lt3741-120-pinlt3741-1100nf+5 | |
SMAJ7A
Abstract: LTC4227-1 LTC4227 LTC4227-2 LTC4227C LTC4227I SBG1025L Si7336ADP SiR462DP 120 R resitor network
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ltc4227-1/ltc4227-2ltc4227-1ltc4227-220-lead+14 | |
schematic diagram atx Power supply 500w
Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
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p462-ndp463-ndlng295lfcp2ulng395mftp5u+11 | |
FSQ510 Equivalent
Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
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gp-20fsq510 equivalentbta12 6008bta16 6008+7 | |
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Contextual Info: LTC3876 Dual DC/DC Controller for DDR Power with Differential VDDQ Sensing and ±50mA VTT Reference DESCRIPTION FEATURES n n n n n n n n n n n n The LTC 3876 is a complete DDR power solution, compatible with DDR1, DDR2, DDR3 and future DDRX lower voltage standards. The LTC3876 includes VDDQ and VTT |
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ltc3876powltc3838qfn-38tssop-38e+5 | |
pmos 40a 1000v
Abstract: luminus datasheet Si7234DP LT3743 LT3743EUFD PT120 si7236 10NC zener diode LT3755 ptpr330
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lt374328-pinwillop16elt3475/lt3475-1+14 | |
IHLP5050FDER
Abstract: SIR470 LT3741 ihlp4040dzer LT3741EUF Super Capacitor Charger PSMN4 RJKO346DPA 5-154V WSL25122L500FEA
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lt3741ihlp5050fder8rzm01si7884bdpsir470dp+13 | |
DEMO Interleaved boost converter
Abstract: 0009m BSC010NE2LS LTC3876FE
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ltc3876200khz38-pinqfn-20+10 | |
RJKO346DPA
Abstract: LT3741 LT3741EUF WSL25122L500FEA Super Capacitor Charger SiR470DP RJK0365DPA
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lt3741ihlp5050fder8rzm01si7884bdpsir470dp+9 | |