TOSHIBA MARKING ABBREVIATION TRANSISTOR Search Results

transistor C2230

Abstract: c2230 C2230A C2230 NPN Transistor 2sc2230 transistor C2230a 2SC2230A
Contextual Info: 2SC2230,2SC2230A TOSHIBA Transistor Silicon NPN Triple Diffused Type PCT Process 2SC2230,2SC2230A High-Voltage General Amplifier Applications Color TV Class-B Sound Output Applications • High breakdown voltage: VCEO = 180 V (2SC2230A) • High DC current gain

transistor C2230

Abstract: c2230a 2SC2230 C2230 C2230 NPN Transistor
Contextual Info: 2SC2230,2SC2230A TOSHIBA Transistor Silicon NPN Triple Diffused Type PCT Process 2SC2230,2SC2230A High-Voltage General Amplifier Applications Color TV Class-B Sound Output Applications • High breakdown voltage: VCEO = 180 V (2SC2230A) • High DC current gain

c4686

Abstract: transistor C4686 c4686a equivalent transistor c4686a 2SC4686 transistor c4686A 2SC4686A IC5010
Contextual Info: 2SC4686,2SC4686A TOSHIBA Transistor Silicon NPN Triple Diffused Planar Type 2SC4686, 2SC4686A TV Dynamic Focus Applications High-Voltage Switching Applications Unit: mm High-Voltage Amplifier Applications • High voltage: VCEO = 1200 V max • Small collector output capacitance: Cob = 2.2 pF (typ.) (VCB = 100 V)

transistor C4686

Abstract: c4686A
Contextual Info: 2SC4686,2SC4686A TOSHIBA Transistor Silicon NPN Triple Diffused Planar Type 2SC4686, 2SC4686A TV Dynamic Focus Applications High-Voltage Switching Applications Unit: mm High-Voltage Amplifier Applications • High voltage: VCEO = 1200 V max • Small collector output capacitance: Cob = 2.2 pF (typ.) (VCB = 100 V)

transistor C4686

Abstract: C4686 c4686a 2SC4686 2SC468
Contextual Info: 2SC4686,2SC4686A TOSHIBA Transistor Silicon NPN Triple Diffused Planar Type 2SC4686, 2SC4686A TV Dynamic Focus Applications High-Voltage Switching Applications Unit: mm High-Voltage Amplifier Applications • High voltage: VCEO = 1200 V max • Small collector output capacitance: Cob = 2.2 pF (typ.) (VCB = 100 V)

transistor C2230

Abstract: C2230 C2230 NPN Transistor c2230a 2SC2230 2SC2230A
Contextual Info: 2SC2230,2SC2230A TOSHIBA Transistor Silicon NPN Triple Diffused Type PCT Process 2SC2230,2SC2230A High-Voltage General Amplifier Applications Color TV Class-B Sound Output Applications • High breakdown voltage: VCEO = 180 V (2SC2230A) • High DC current gain

C4686

Abstract: c4686A transistor C4686 2SC4686A equivalent transistor c4686a 2SC4686
Contextual Info: 2SC4686,2SC4686A TOSHIBA Transistor Silicon NPN Triple Diffused Planar Type 2SC4686, 2SC4686A TV Dynamic Focus Applications High-Voltage Switching Applications High-Voltage Amplifier Applications Unit: mm • High voltage: VCEO = 1200 V max • Small collector output capacitance: Cob = 2.2 pF (typ.) (VCB = 100 V)

toshiba audio power amplifier

Abstract: K2162 toshiba Ta 2SJ338 2SK2162 K2-16 Toshiba 2SJ
Contextual Info: 2SK2162 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK2162 Audio Frequency Power Amplifier Applications Unit: mm • High breakdown voltage: VDSS = 180 V • High forward transfer admittance: |Yfs| = 0.7 S typ. • Complementary to 2SJ338

a1926

Abstract: 2SA1926 TOSHIBA Transistor Silicon PNP Epitaxial Type 2-7D101A
Contextual Info: 2SA1926 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1926 Power Amplifier Applications Power Switching Applications • Unit: mm Low collector saturation voltage: VCE (sat) = −0.17 V (max) (IC = −1 A) Maximum Ratings (Ta = 25°C) Characteristics

GT40M101

Abstract: 216F
Contextual Info: GT40M101 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N−CHANNEL IGBT GT40M101 Unit: mm HIGH POWER SWITCHING APPLICATIONS High input impedance High speed Low saturation voltage : tf = 0.4µs Max. : VCE(sat) = 3.4V (Max.) Enhancement mode type MAXIMUM RATINGS (Ta = 25°C)

gt40t101

Abstract: 030619EAA
Contextual Info: GT40T101 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL MOS TYPE GT40T101 Unit: mm HIGH POWER SWITCHING APPLICATIONS Enhancement mode type High speed : tf = 0.4 µs Max. (IC = 40 A) Low saturation : VCE (sat) = 5.0 V (Max.) (IC = 40 A) MAXIMUM RATINGS (Ta = 25°C)

MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR

Abstract: Toshiba 2SJ 2sk2162
Contextual Info: 2SK2162 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type 2SK2162 Audio-Frequency Power Amplifier Applications Unit: mm • High breakdown voltage: VDSS = 180 V • High forward transfer admittance: |Yfs| = 0.7 S typ. • Complementary to 2SJ338

2SC5563

Abstract: DSA0042876
Contextual Info: 2SC5563 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5563 Dynamic Focus Applications Unit: mm • High voltage: VCEO = 1500 V • Small collector output capacitance: Cob = 2.0 pF typ. (VCB = 100 V) Maximum Ratings (Tc = 25°C) Characteristics Symbol

transistor npn C536

Abstract: c5360 transistor C536 2SC5360
Contextual Info: 2SC5360 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5360 Color TV Chroma Output Applications Unit: mm • High voltage: VCEO = 300 V • Small collector output capacitance: Cob = 5.0 pF typ. • High transition frequency: fT = 100 MHz (typ.) Maximum Ratings (Tc = 25°C)

Contextual Info: 2SC5563 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5563 Dynamic Focus Applications Unit: mm • High voltage: VCEO = 1500 V • Small collector output capacitance: Cob = 2.0 pF typ. (VCB = 100 V) Maximum Ratings (Tc = 25°C) Characteristics Symbol

Contextual Info: 2SA1887 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1887 High-Current Switching Applications • Unit: mm Low collector saturation voltage: VCE (sat) = −0.4 V (max) at IC = −5 A Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating

transistor a017

Contextual Info: 2SA1926 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1926 Power Amplifier Applications Power Switching Applications • Unit: mm Low collector saturation voltage: VCE (sat) = −0.17 V (max) (IC = −1 A) Maximum Ratings (Ta = 25°C) Characteristics

A1887

Abstract: TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA1887
Contextual Info: 2SA1887 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1887 High-Current Switching Applications • Unit: mm Low collector saturation voltage: VCE (sat) = −0.4 V (max) at IC = −5 A Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating

C5201 transistor

Abstract: C5201 2SC5201
Contextual Info: 2SC5201 TOSHIBA Transistor Silicon NPN Triple Diffused Mesa Type 2SC5201 High-Voltage Switching Applications • High breakdown voltage: VCEO = 600 V • Low saturation voltage: VCE sat = 1.0 V (max) Unit: mm (IC = 20 mA, IB = 0.5 mA) Maximum Ratings (Ta = 25°C)

C5201 transistor

Contextual Info: 2SC5201 TOSHIBA Transistor Silicon NPN Triple Diffused Mesa Type 2SC5201 High-Voltage Switching Applications • High breakdown voltage: VCEO = 600 V • Low saturation voltage: VCE sat = 1.0 V (max) Unit: mm (IC = 20 mA, IB = 0.5 mA) Maximum Ratings (Ta = 25°C)

k3497

Abstract: 2SK3497 2SJ618 toshiba marking code transistor toshiba 2-16c1b Toshiba 2SJ K349
Contextual Info: 2SK3497 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK3497 High Power Amplifier Application Unit: mm High breakdown voltage: VDSS = 180V Complementary to 2SJ618 Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain−source voltage

toshiba marking code transistor

Abstract: 2SC5612
Contextual Info: 2SC5612 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5612 HORIZONTAL DEFLECTION OUTPUT FOR COLOR TV High Voltage : VCBO = 2000 V Low Saturation Voltage : VCE sat = 3 V (Max.) High Speed : tf = 0.15µs (Typ.) Unit: mm MAXIMUM RATINGS (Tc = 25°C)

Contextual Info: 2SA1926 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1926 Power Amplifier Applications Power Switching Applications • Unit: mm Low collector saturation voltage: VCE (sat) = −0.17 V (max) (IC = −1 A) Absolute Maximum Ratings (Ta = 25°C)

Contextual Info: GT50J102 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT50J102 Unit: mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS Third-generation IGBT Enhancement mode type High speed. : tf = 0.30µs Max. Low saturation voltage. : VCE(sat) = 2.7V (Max.)