2SC5563 Search Results

2SC5563

Contextual Info: 2SC5563 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5563 Dynamic Focus Applications Unit: mm • High voltage: VCEO = 1500 V • Small collector output capacitance: Cob = 2.0 pF typ. (VCB = 100 V) Absolute Maximum Ratings (Tc = 25°C) Characteristics

2SC5563

Contextual Info: TO SH IBA TENTATIVE 2SC5563 TOSHIBA TRANSISTOR DYNAMIC FOCUS APPLICATIONS • • SILICON NPN TRIPLE DIFFUSED TYPE 2SC5563 High Voltage : V^ e q - 1500 V Small Collector Output Capacitance : C0b = 2.0 pF Typ. iV n n = 1 00 V'l MAXIMUM RATINGS (Ta = 25°C)

TA12100

Abstract: MA1060 c5563 2SC5563
Contextual Info: 2SC5563 東芝トランジスタ シリコンNPN三重拡散形 2SC5563 ○ ダイナミックフォーカス用 単位: mm • 高耐圧です。 • コレクタ出力容量が低い。 : Cob = 2.1 pF 標準 (VCB = 100 V) : VCEO = 1500 V 絶対最大定格 (Ta = 25°C)

TA12100

Abstract: c5563 2SC5563
Contextual Info: 2SC5563 東芝トランジスタ シリコンNPN三重拡散形 2SC5563 ○ ダイナミックフォーカス用 単位: mm • 高耐圧です。 • コレクタ出力容量が低い。 : Cob = 2.1 pF 標準 (VCB = 100 V) : VCEO = 1500 V 絶対最大定格 (Ta = 25°C)

2SC5563

Abstract: DSA0042876
Contextual Info: 2SC5563 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5563 Dynamic Focus Applications Unit: mm • High voltage: VCEO = 1500 V • Small collector output capacitance: Cob = 2.0 pF typ. (VCB = 100 V) Maximum Ratings (Tc = 25°C) Characteristics Symbol

2SC5563

Contextual Info: 2SC5563 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5563 Dynamic Focus Applications Unit: mm • High voltage: VCEO = 1500 V • Small collector output capacitance: Cob = 2.1 pF typ. (VCB = 100 V) Absolute Maximum Ratings (Ta = 25°C) Characteristics

2SC5563

Contextual Info: 2SC5563 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5563 Dynamic Focus Applications Unit: mm • High voltage: VCEO = 1500 V • Small collector output capacitance: Cob = 2.0 pF typ. (VCB = 100 V) Absolute Maximum Ratings (Tc = 25°C) Characteristics

2SC5563

Contextual Info: TO SH IBA TENTATIVE 2SC5563 TOSHIBA TRANSISTOR DYNAMIC FOCUS APPLICATIONS • • SILICON NPN TRIPLE DIFFUSED TYPE 2SC5563 Unit in mm r 10 ±0.3 High Voltage : V^ e q - 1500 V Small Collector Output Capacitance : C0b = 2.0 pF Typ. ^3.2 ± 0.2 2.7±Q 2 m

2SC5563

Contextual Info: TOSHIBA TENTATIVE 2SC5563 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SC5563 Unit in mm DYNAM IC FOCUS APPLICATIONS • • High Voltage : V q ^o = 1500 V Small Collector Output Capacitance : C0b = 2.0 pF Typ. (VCB = 100 V) r 10 ± 0 .3 ^ 3 .2 ± 0.2

Contextual Info: T O SH IB A TENTATIVE 2SC5563 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SC 5563 Unit in mm DYNAMIC FOCUS APPLICATIONS • • High Voltage Small Collector Output Capacitance 3.2 ± 0 .2 1 Q ± 0 .3 V ç e o = 1500 V Cob = 2.0 pF Typ. (VCB = 100 V)

Contextual Info: T O SH IB A TENTATIVE 2SC5563 TOSHIBA TRANSISTOR DYNAMIC FOCUS APPLICATIONS • • SILICON NPN TRIPLE DIFFUSED TYPE 2 SC 5 563 High Voltage Small Collector Output Capacitance V ç e O = 1500 V Cob = 2.0 pF Typ. (VCB = 100 V) MAXIMUM RATINGS (Ta = 25°C)

Contextual Info: 2SC5563 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5563 Dynamic Focus Applications Unit: mm • High voltage: VCEO = 1500 V • Small collector output capacitance: Cob = 2.0 pF typ. (VCB = 100 V) Maximum Ratings (Tc = 25°C) Characteristics Symbol

GT30F131

Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01
Contextual Info: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs

IGBT GT30F124

Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075
Contextual Info: 東芝半導体製品総覧表 2011 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ

smd transistor h2a

Abstract: SMD TRANSISTOR H2A NPN transistor smd H2A 2sa1943 amplifier circuit diagram TPCP8L01 2sC5200, 2SA1943 H2A transistor SMD 2sc5200 power amplifiers diagram MARKING SMD PNP TRANSISTOR h2a SMD H2A
Contextual Info: 2008-9 PRODUCT GUIDE Power Transistors s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g Using a minute pattern and a high-density MET design, Toshiba has achieved high levels of current efficiency. Package type can be selected to yield collector power output

GT30F124

Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123
Contextual Info: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs

transistor bc 245

Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122
Contextual Info: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243

2SA1941 amp circuit

Abstract: 2SC3303 2SD880 TO3P package 2SA114 smd transistor h2a 2sb834 amplifier circuit using 2sa1943 and 2sc5200 TOSHIBA BIPOLAR POWER TRANSISTOR amplifier design tta1943
Contextual Info: Semiconductor Catalog Mar. 2013 Bipolar Power Transistors SEMICONDUCTOR & STORAGE PRODUCTS http://www.semicon.toshiba.co.jp/eng Toshiba Bipolar Power Transistors Thank you for purchasing Toshiba semiconductor products. Semiconductor products are used in a wide range of fields, including

2sC5200, 2SA1943

Abstract: TPCP8L01 TPCP8602 2sC5200 2SA1943 2sc5200 TTC003 2SC4793 2sa1837 2sC5200, 2SA1943, 2sc5198 TTC13003L 2SC3180N
Contextual Info: 製品カタログ 2010-4 東芝半導体 製品カタログ パワートランジスタ h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / 東芝パワートランジスタについて 機能別・用途別選択早見表 • · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · 4

2SA1930 2sc5171

Abstract: tpc8107 equivalent TPC8107 application circuit 2SC4157 equivalent 2sa1930 transistor equivalent 2SA949 equivalent 2sd880 equivalent equivalent 2SC5200 2SK2865 Equivalent marking 4d npn
Contextual Info: Power Transistors Power Transistors z 218 Power Amps z 224 POWER-MOLD transistors SC-63/64 z 225 PW-MINI Transisters (SC-62) z 226 TSM Transistors (Thinnest package in the world in SC-59 and SOT-23 class) z 227 Power Transistors for Switching Power Supply z 228

2SC2625

Abstract: power transistor 2sc2625 datasheet 2SC5000 2SA793 2sc2335 2sc2625 equivalent 2SC1116A 2SC2306 2SC2829 2sb600
Contextual Info: STI Type: 2C5000 Industry Type: 2C5000 V CEO: ICBO ICEX: h FE: IC: V CE: Case Style: STI Type: 2N2453DIE Industry Type: 2C2453 V CEO: 30 ICBO ICEX: h FE: 150 IC: 1.0m V CE: Case Style: STI Type: 2N3807DIE Industry Type: 2C3807 V CEO: 60 ICBO ICEX: h FE: 300

TB1253N

Abstract: TB1240 TA8792N TA8792 tb1238 f062dsl TC90A65F TB1238BN F1814B LB 122s
Contextual Info: 2000-2 エネルギーとエレクトロニクス 東芝半導体システムカタログ TV編 Y1A1AH TVの機能別基本ブロック図 音声処理部 周波数シンセサイザ部 音声多重復調 SIF UHF/VHF チューナ サラウンド 機能 SAW

GT45F122

Abstract: TK13A60U GT30F123 2SK4207 GT30J124 IGBT GT30F123 gt30f122 GT30G122 2SC5471 IGBT GT30J124
Contextual Info: 東芝半導体製品総覧表 2009 年 7 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ

GT30J124

Abstract: smd transistor h2a gt45f122 TPCP8R01 GT30F123 2sc1815 smd type smd marking 8L01 h2a smd 2SC5471 2sc5200 amplifiers circuit diagram
Contextual Info: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs