TO267 Search Results

2n4441 transistor

Abstract: SML1004RGN IRFV360 semelaB irfy430 BUZ10 BUZ50 2N6661 BYV34 Series 2N4441 BYV29 Series
Contextual Info: A E R O S P A C E P R O D U C T S SEMICONDUCTORS FOR HIGH RELIABILITY APPLICATIONS M E TA L PA C K A G E S F O R N E W D E S I G N S TO257 TO254 TO258 TO267 Tabless Z-Tab Flexy-Lead P O W E R M O S F E T S , T R A N S I S T O R S , D I O D E S , V O L TA G E R E G U L AT O R S

2N7224

Abstract: 2N7224U
Contextual Info: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com N-CHANNEL MOSFET Qualified per MIL-PRF-19500/592 DEVICES LEVELS 2N7224 2N7224U JAN JANTX JANTXV ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)

OM6050SJ

Abstract: OM6052SJ OM6053SJ OM6054SJ high current mosfet
Contextual Info: OM6050SJ OM6052SJ OM6054SJ OM6051SJ OM6053SJ OM6Q55SJ HIGH CURRENT MOSFET IN ISOLATED, TO-267 HERMETIC PACKAGE, SIZE 7 DIE, LOW R DS 0n High Current, High Voltage 100V Thru 1000V, Up To 100 Amp N-Channel, Size 7 MOSFETs, High Energy Capability FEATURES •

IRF460

Abstract: SMD TRANSISTOR MARKING k38 smd transistor k38 we 751002 s SMD-6C transistor smd k45 RAD-HARD igbt IRF3504 afl2805s manufactured by international rectifier 550-065
Contextual Info: Aerospace and Defense Products Short Form Catalog 2007 Welcome to the Aerospace and Defense Products Short Form Catalog. Inside is an overview of our product line including product specific information. To learn more, visit our web site at irf.com where you will find technical documents, data sheets for all products, application notes, design tips, technical papers, application-specific information,

Contextual Info: The documentation and process conversion measures necessary to comply with this document shall be completed by 20 January 2014. INCH-POUND MIL-PRF-19500/595K 20 November 2013 SUPERSEDING MIL-PRF-19500/595J 25 October 2010 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, REPETITIVE AVALANCHE, FIELD EFFECT,

Contextual Info: SHD258624 SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 4975, REV. - HERMETIC POWER MOSFET N-CHANNEL DESCRIPTION: A 600 VOLT, 44 AMP, 0.15 RDS ON MOSFET IN A HERMETIC TO-267 PACKAGE. MAX. RATINGS / ELECTRICAL CHARACTERISTICS (AT Tj=25 C UNLESS OTHERWISE SPECIFIED).

APT 1029

Contextual Info: APT20M20WLL 200V 65A 0.022Ω POWER MOS 7 R MOSFET TO-267 Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON

D 92 M - 02 DIODE

Contextual Info: • R r M APT10057WVR A d van ced po w er Te c h n o l o g y 1000v 17.3a 0.57a POWER M O S V ‘ Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

To267

Contextual Info: Semelab Aerospace Package Dimensions 20.45 .805 20.20 (.795) 1.80 (.071) 1.25 (.049) 10.23 (.403) 10.10 (.398) 4.19 (.165) 3.95 (.156) 24.15 (.951) 23.60 (.929) 16.90 (.665) 16.40 (.646) 20.60 (0.811) 19.80 (0.780) 19.05 (.750) 12.70 (.500) 4.00 (.157) BSC

Contextual Info: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 1 June 2013. MIL-PRF-19500/596K 17 April 2013 SUPERSEDING MIL-PRF-19500/596J 14 April 2009 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, REPETITIVE AVALANCHE, FIELD EFFECT,

Contextual Info: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com RADIATION HARDENED N-CHANNEL MOSFET Reference MIL-PRF-19500/603 DEVICES LEVELS 2N7268 2N7268U JANSR (100K RAD(Si)

Contextual Info: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com RADIATION HARDENED N-CHANNEL MOSFET Reference MIL-PRF-19500/603 DEVICES LEVELS 2N7269 2N7269U JANSR (100K RAD(Si)

mosfet 600V 100A

Abstract: APT6017WVR
Contextual Info: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http://www.microsemi.com Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 N-CHANNEL MOSFET

2N7261

Abstract: 2N7268 2N7268U JANSF2N7268 JANSF2N7268U 2N7261 equivalent 340A JANSR2N7268 JANSR2N7268U
Contextual Info: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com RADIATION HARDENED N-CHANNEL MOSFET Reference MIL-PRF-19500/603 DEVICES LEVELS 2N7268 2N7268U JANSR (100K RAD(Si)

Contextual Info: OM6050SJ OM6052SJ OM6Û54SJ OM6051SJ OM6Q53SJ OM6055SJ HIGH CURRENT MOSFET IN ISOLATED, TO-267 HERMETIC PACKAGE, SIZE 7 DIE, LOW RDS on High C u rren t, High V oltage 100V Th ru 1000V, Up To 100 A m p N -C h a n n e l, S ize 7 M O S F E T s. High E n ergy C a p a b ility

APT10026JN

Abstract: apt1004rbn APT10050JN FREDFETs APT8030jn APT4020BN APT5010LVFR APT5014LVR arf444 APT10M09LVR
Contextual Info: 1999 SHORT FORM CATALOG ADVANCED POWER TECHNOLOGY MIL-PRF-19500 ISO9001 Certified POWER DISCRETE SEMICONDUCTORS TECHNOLOGY TO THE NEXT POWER. 1 Advanced Power Technology Technology . Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on

TD 422 BL

Abstract: MA-01841 2N7394 SI 6822 TO-276AC
Contextual Info: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http://www.microsemi.com Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 RADIATION HARDENED N-CHANNEL MOSFET

2N7236

Abstract: 2N7236U
Contextual Info: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com P-CHANNEL MOSFET Qualified per MIL-PRF-19500/595 DEVICES LEVELS 2N7236 2N7236U JAN JANTX JANTXV ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)

Contextual Info: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http://www.microsemi.com Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 RADIATION HARDENED N-CHANNEL MOSFET

To267

Abstract: TO-267
Contextual Info: APT40M82WVR 44A 0.082Ω 400V POWER MOS V TO-267 V® Power MOS is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

Contextual Info: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 N-CHANNEL MOSFET

Contextual Info: DUAL SCHOTTKY RECTIFIER DIODE SB30-100MSMD • Hermetic Ceramic Surface Mount Package TO-267AB • Low Forward Voltage Drop • Typical applications include Switching Power Supplies, Converters, Free Wheeling Diodes and Reverse Battery Protection • Space Level and High-Reliability Screening Options Available

5017BVR

Abstract: 40814 5020BN 1431 T APT5010LVR APT1001RBLC apt10050 APT30M85BVR APT5020BLC apt2x101D60
Contextual Info: 2000 SHORT FORM CATALOG ADVANCED POWER TECHNOLOGY MIL-PRF-19500 ISO9001 Certified POWER DISCRETE SEMICONDUCTORS TECHNOLOGY TO THE NEXT POWER. 1 Advanced Power Technology Technology . Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on

Contextual Info: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http://www.microsemi.com Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 N-CHANNEL MOSFET