APT40M82WVR Search Results
APT40M82WVR Datasheets (1)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| APT40M82WVR | Advanced Power Technology | N-Channel enhancement mode power MOSFET | Original | 61.65KB | 4 |
APT40M82WVR Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
To267
Abstract: TO-267
|
Original |
apt40m82wvro-267to267to-267 | |
APT10026JN
Abstract: apt1004rbn APT10050JN FREDFETs APT8030jn APT4020BN APT5010LVFR APT5014LVR arf444 APT10M09LVR
|
Original |
mil-prf-19500iso9001apt10026jnapt1004rbn+8 | |
5017BVR
Abstract: 40814 5020BN 1431 T APT5010LVR APT1001RBLC apt10050 APT30M85BVR APT5020BLC apt2x101D60
|
Original |
mil-prf-19500iso90015017bvr40814+8 | |
APT6015LVR
Abstract: 5020bn APT6011LVFR arf450 5017bvr APT2*61D120J FREDFETs apt8015jvr APT100GF60LR APT5014LVR
|
Original |
mil-prf-19500iso9001apt6015lvr5020bn+8 | |
APT5012Contextual Info: Standard Power MOSFETs Power MOS V MOSFET Technology. is a patented selfaligned interdigitated open cell structure with improved switching and RDS ON advantages over our previous MOS IV® generation and over industry standard closed cell devices. Feature |
Original |
apt5019hvrapt5026hvrapt4014hvrapt4018hvr+6 | |
660 tg diodeContextual Info: • R A PT40 M82WV R A d va n ce d W /Æ P o w er Te c h n o l o g y 400v 44a 0.082n POWER MOS V‘ Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® |
OCR Scan |
m82wvo-267apt40m82w00a/ps+2 |