2N7269 Search Results

Contextual Info: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com RADIATION HARDENED N-CHANNEL MOSFET Reference MIL-PRF-19500/603 DEVICES LEVELS 2N7269 2N7269U JANSR (100K RAD(Si)

MSR 750

Contextual Info: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com RADIATION HARDENED N-CHANNEL MOSFET Reference MIL-PRF-19500/603 DEVICES LEVELS 2N7269 2N7269U MSR (100K RAD(Si)

2N7269

Abstract: JANSR2N7269U JANSF2N7269 7T4-LDS-0122 260a texas 2N7269U JANSF2N7269U JANSR2N7269 2n7262
Contextual Info: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com RADIATION HARDENED N-CHANNEL MOSFET Reference MIL-PRF-19500/603 DEVICES LEVELS 2N7269 2N7269U JANSR (100K RAD(Si)

2N7334

Abstract: irfg9110 H24 SMD
Contextual Info: Other Products from IR Government and Space H EX FET Power M O SFETs Radiation Hardened N - and P-Channel Part • d@ T ,= 25°C Iq@ Tq = 100*C A (A) RthJC Max. (K/W) Pd@ Tq = 25°C Number BVq ss (V) RDS(on) (Ohms) IRHE7110 100 IRHE8110 IRHE7130 IRHE8130

JANKCAR2N7389

Abstract: 2N7426 IRHC7360SE JANKCAF2N7389 IRHC9Y130 JANKCAR2N7268 2n7391 2n7425 JANKCAR2N7261 2n7389
Contextual Info: INCH-POUND MIL-PRF-19500/657A 22 February 2000 SUPERSEDING MIL-PRF-19500/657 23 December 1997 PERFORMANCE SPECIFICATION SEMICONDUCTOR DEVICE, FIELD EFFECT, RADIATION HARDENED, TRANSISTOR DIE, N and P-CHANNEL, SILICON VARIOUS TYPES JANHC, AND JANKC This specification is approved for use by all Departments

TD 422 BL

Abstract: MA-01841 2N7394 SI 6822 TO-276AC
Contextual Info: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http://www.microsemi.com Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 RADIATION HARDENED N-CHANNEL MOSFET

Contextual Info: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http://www.microsemi.com Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 RADIATION HARDENED N-CHANNEL MOSFET

transistor 2N4

Abstract: ST25C transistor 2N407 transistor 2SA114 TFK 808 transistor 2sc124 SF1222 GE2 TRANSISTOR TFK 877 TFK 748
Contextual Info: $ 1.50 2 -H 2 1 $ % Cat. No. SSH-5 ^TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York i FIFTH EDITION FIRST PRINTING — JANUARY, 1964 FIRST EDITION

2N7269U

Abstract: IRHN7250 IRHN8250 JANSH2N7269U JANSR2N7269U
Contextual Info: PD - 90679E IRHN7250 IRHN8250 2N7269U 2N7269U REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR 200Volt, 0.100Ω Ω, MEGA RAD Hard REF:MIL-PRF-19500/603 N CHANNEL MEGA RAD HardTM TM HEXFET® Inter national Rectifier’s RAD Hard technology

IRHC7260SE

Abstract: JANKCAR2N7389
Contextual Info: The documentation and process conversion measures necessary to comply with this revision shall be completed by 26 April 2011. INCH-POUND MIL-PRF-19500/657B 26 January 2011 SUPERSEDING MIL-PRF-19500/657A 22 February 2000 * PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT, RADIATION HARDENED, TRANSISTOR DIE,

2N7550

Abstract: 2N7549 2n7545 2N7476T1 smd 92112 2N7546 IRHNJ9130SCS 2N7471 2N7426 2N7468
Contextual Info: Hi-Rel Products Shortform Hermetic MOSFETs High Voltage MOSFETs for PFC and Primary Switch Applications Hi-Rel Components Schottky and HEXFRED Products Hi-Rel Schottky Diodes Hi-Rel HEXFRED  Diodes Hi-Rel Linear and Switching Regulators Fixed Voltage Regulators

2n7425

Abstract: 2n7389 2N7422 2N7433 2N7389 TO39 TO-254 2N7269 2n7391 to39 2N7262
Contextual Info: MIL-PRF-19500 QPL STATUS QPL Status Hex Size 1 1 1 1 2 2 3 3 3 3 3 3 3 3 4 4 5 5 5 5 CH N N N/P P N P N N P P N N P P N P N N N N Package TO39 M0036 MO036 MO036 TO39 TO39 TO3 TO39 TO3 TO39 TO39 TO257 TO257 TO39 TO254 TO254 TO3 TO254 TO254 TO254 March 1998

V145M

Abstract: 2N7269 IRHM7250 IRHM8250 h234 o8e transformer CLA20 S60CL
Contextual Info: Data Sheet No. PD-9.674A llO R l INTERNATIONAL RECTIFIER REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS IRHM7250 IRHM8S5Q 2N 7269 JANSRSN7S69 JAN5HSN7S69 N-CHANNEL _ MEGA RAD HARD 200 Volt, 0.100Q, MEGA RAD HARD HEXFET Product Summary

2N7269

Abstract: delta rectifier all model 100S IRHM7250 IRHM8250 h229 h237
Contextual Info: Data Sheet No. PD-9.674A INTERNATIONAL RECTIFIER l i “ Rl REPETITIVE AVALANCHE AND dv/dt RATED H E X FE f TRANSISTORS IRHM7S50 IRHM8250 SN7269 JANSRSN7S69 JANSHSN7S69 N-CHANNEL _MEGA RAD HARD 200 Volt, 0.100Q, MEGA RAD HARD HEXFET Product Summary

smd 662

Abstract: 2N7422 2n7425 2N7426 2N7383 601 SMD 2N7389 IRHM9260 2N7422U 2N7219U
Contextual Info: QPL Product Matrix February, 1999 Government & Space Products Package TO39 LCC MO036 MO036 MO036 TO39 LCC TO39 LCC TO3 TO39 LCC TO3 TO39 LCC TO39 LCC TO257 TO257 TO39 LCC TO254 SMD-1 TO254 SMD-1 TO3 TO254 SMD-1 TO254 SMD-1 TO254 TO-254 SMD-1 TO-254 SMD-2 TO-254

2N7268

Contextual Info: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 20 June 2013. MIL-PRF-19500/603J 6 May 2013 SUPERSEDING MIL-PRF-19500/603H 1 July 2011 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED

SHOCK+SENSOR+083

Contextual Info: International Government and Space llËSRectifier HEXFET Power MOSFETs Radiation Hardened N & P Channel 3 Part Number * bvDSS (V) R DS(on) (Ohms) >D@ TC = 100°C R thJC Max. P|J@ Tc = 25°C Outline (A) (A) (K/W) (W) Number (1) IRH7054 60 0.025 45 32 0.83

2N7269

Abstract: 2N7394 2N7270 2N7268 2N7269u 2N7270 mosfet 2N7268U 2N7394U marking IRH
Contextual Info: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 10 July 2006. MIL-PRF-19500/603G 10 April 2006 SUPERSEDING MIL-PRF-19500/603F 10 November 2004 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED