TO247 CASE Search Results

F1S30P06

Abstract: RF1S30P06 RF1S30P06SM RFG30P06 RFP30P06 TB334
Contextual Info: [ /Title RFG30 P06, RFP30P 06, RF1S30 P06, RF1S30 P06SM /Subject (30A, 60V, 0.065 Ohm, PChannel Power MOSFETs) /Author () /Keywords (Harris Semiconductor, PChannel Power MOSFETs, TO247, TO220AB, TO262AA, TO263AB) RFG30P06, RFP30P06, RF1S30P06, RF1S30P06SM

diode 104

Abstract: click 0819 SML5023BN
Contextual Info: SEME SML5023BN LAB 4TH GENERATION MOSFET TO247–AD Package Outline. Dimensions in mm inches (0.185) (0.209) (0.059) (0.098) N–CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 15.49 (0.610) 16.26 (0.640) 20.80 (0.819) 21.46 (0.845) 6.15 (0.242) BSC

B4015L

Abstract: MBR4015LWT
Contextual Info: MBR4015LWT SWITCHMODE Schottky Power Rectifier TO247 Power Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low

Contextual Info: MBR4015LWT SWITCHMODE Schottky Power Rectifier TO247 Power Package . . . employing the Schottky Barrier principle in a large area metal-to-silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low

MBR4015LWT

Abstract: MBR4015LWTG
Contextual Info: MBR4015LWT SWITCHMODEt Schottky Power Rectifier TO247 Power Package This device employs the Schottky Barrier principle in a large area metal−to−silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low

Contextual Info: MBR4015LWT SWITCHMODE Schottky Power Rectifier TO247 Power Package . . . employing the Schottky Barrier principle in a large area metal−to−silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low

B4015L

Contextual Info: MBR4015LWT SWITCHMODE Schottky Power Rectifier TO247 Power Package . . . employing the Schottky Barrier principle in a large area metal−to−silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low

20n60cfd

Abstract: Q67040-S4617 SPW20N60CFD DSA003761 20N60CF
Contextual Info: SPW20N60CFD Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 0.22 Ω ID 20.7 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO247 • Extreme dv/dt rated • High peak current capability

11N60CFD

Abstract: SPW11N60CFD 11N60C
Contextual Info: SPW11N60CFD Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 0.44 Ω ID 11 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO247 • Extreme dv/dt rated • High peak current capability

100 watt resistors

Abstract: RCD TO220 HDP247
Contextual Info: POWER THICK FILM ON STEEL RESISTORS TO126, TO220, and TO247, 25 to 100 WATT HDP SERIES RoHS RESISTORS CAPACITORS COILS DELAY LINES Term.W is RoHS compliant & 260°C compatible FEATURES Industry’s most economical TO-style power resistors! Standard resistance range: 0.05Ω to 10KΩ

transistor 20N60s5

Abstract: 20n60s5 SPW20N60S5 equivalent SPW20N60S5 20n60s5 power transistor 20N60S5 TO247 20N60S RESISTANCE VALUE 20N60S5
Contextual Info: SPW20N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 0.19 Ω ID 20 A P-TO247 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance

K40T1202

Abstract: IGBT K40T1202 K40T120 IKW40N120 IKW40N120T2 PG-TO-247-3
Contextual Info: TrenchStop 2 Low Loss DuoPack : nd IKW40N120T2 Generation Series IGBT in 2nd generation TrenchStop® with soft, fast recovery anti-parallel EmCon diode C • • • • • • • • • • • Best in class TO247 Short circuit withstand time – 10 s

M106

Abstract: R010 RCD TO220
Contextual Info: POWER THICK FILM ON STEEL RESISTORS TO126, TO220, and TO247, 25 to 100 WATT HDP SERIES RoHS RESISTORS CAPACITORS COILS DELAY LINES Term.W is RoHS compliant & 260°C compatible FEATURES Industry’s most economical TO-style power resistors! Standard resistance range: 0.05Ω to 10KΩ

52n50c3

Abstract: SPW52N50C3
Contextual Info: SPW52N50C3 CoolMOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS on in TO-247 VDS @ Tjmax 560 V RDS(on) 0.07 Ω ID 52 A • Ultra low gate charge PG-TO247 • Periodic avalanche rated • Extreme dv/dt rated

BUV48A

Abstract: TIP35CW failure report IGBT B505 BDW83C BU941ZP TIP142 TIP2955 TIP34C tip35
Contextual Info: PRODUCT/PROCESS CHANGE NOTIFICATION PCN APM-PWR/07/2362 Notification Date 03/19/2007 Package change from TO218 to TO247 for Power Bipolar products PWR - PWR BIP/ IGBT/ RF 1/14 PCN APM-PWR/07/2362 - Notification Date 03/19/2007 Table 1. Change Identification

47n60c3

Abstract: SPW47N60C3 SDP06S60 617 300
Contextual Info: SPW47N60C3 Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.07 Ω ID 47 A • New revolutionary high voltage technology • Worldwide best R DS(on) in TO 247 • Ultra low gate charge P-TO247 • Periodic avalanche rated • Extreme dv/dt rated

11N80C3

Abstract: SPW11N80C3
Contextual Info: SPW11N80C3 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS 800 V • Periodic avalanche rated RDS on 0.45 Ω • Extreme dv/dt rated ID 11 A P-TO247 Type Package

Contextual Info: POWER THICK FILM ON STEEL RESISTORS TO126, TO220, and TO247, 25 to 100 WATT HDP SERIES RESISTORS CAPACITORS COILS DELAY LINES Term.W is RoHS compliant & 260°C compatible RoHS FEATURES Industry’s most economical TO-style power resistors! Standard resistance range: 0.05Ω to 10KΩ

STW55NE10

Contextual Info: STW55NE10 N - CHANNEL 100V - 0.021Ω - 55A - TO247 STripFET POWER MOSFET TYPE STW55NE10 • ■ ■ ■ ■ VDSS R DS on ID 100 V <0.027 Ω 55 A TYPICAL RDS(on) = 0.021 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE AT 100 oC

11N60S5

Abstract: SPW11N60S5 20TP
Contextual Info: SPW11N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 0.38 Ω ID 11 A P-TO247 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance

52n50c3

Abstract: s4615 SPW52N50C3
Contextual Info: SPW52N50C3 Cool MOS Power Transistor Feature VDS @ Tjmax 560 V RDS on 0.07 Ω ID 52 A • New revolutionary high voltage technology • Worldwide best RDS(on) in TO 247 P-TO247 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated

17N80C3

Abstract: 17n80 SPW17N80C3
Contextual Info: SPW17N80C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS on in TO 247 VDS 800 V RDS(on) 0.29 Ω ID 17 A P-TO247 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated Type

47n60C3

Abstract: 47N60C SPW47N60C3 SDP06S60
Contextual Info: SPW47N60C3 Final data Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 0.07 Ω ID 47 A Feature • New revolutionary high voltage technology • Worldwide best R DS(on) in TO 247 • Ultra low gate charge P-TO247 • Periodic avalanche rated • Extreme dv/dt rated

07N60CFD

Abstract: JESD22 SPW07N60CFD
Contextual Info: SPW07N60CFD CoolMOSTM Power Transistor Product Summary Features • Intrinsic fast-recovery body diode • Extremely low reverse recovery charge V DS @Tjmax 650 V R DS on ,max 0.7 Ω ID 6.6 A • Ultra low gate charge • Extreme dv /dt rated PG-TO247 • High peak current capability