TO247 CASE Search Results

TO247 CASE Result Highlights (5)

Part	Manufacturer	Description	Download
CS-DSDMDB09MM-015	Amphenol Cables on Demand	Amphenol CS-DSDMDB09MM-015 9-Pin (DB9) Deluxe D-Sub Cable - Copper Shielded - Male / Male 15ft	PDF
CS-DSDMDB15MM-002.5	Amphenol Cables on Demand	Amphenol CS-DSDMDB15MM-002.5 15-Pin (DB15) Deluxe D-Sub Cable - Copper Shielded - Male / Male 2.5ft	PDF
CS-DSDMDB25MF-025	Amphenol Cables on Demand	Amphenol CS-DSDMDB25MF-025 25-Pin (DB25) Deluxe D-Sub Cable - Copper Shielded - Male / Female 25ft	PDF
CS-DSDMDB37MF-010	Amphenol Cables on Demand	Amphenol CS-DSDMDB37MF-010 37-Pin (DB37) Deluxe D-Sub Cable - Copper Shielded - Male / Female 10ft	PDF
CS-DSDMDB50MF-002.5	Amphenol Cables on Demand	Amphenol CS-DSDMDB50MF-002.5 50-Pin (DB50) Deluxe D-Sub Cable - Copper Shielded - Male / Female 2.5ft	PDF

TO247 CASE Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
11n80c3 Abstract: Q67040-S4440 11n80c SPW11N80C3 80011a 11n80 Contextual Info: SPW11N80C3 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 800 V RDS on 0.45 Ω ID 11 A • Periodic avalanche rated P-TO247 • Extreme dv/dt rated Type SPW11N80C3 Package P-TO247	Original	spw11n80c3 p-to247 q67040-s4440 11n80c3 +311n80c 80011a 11n80	PDF
6r045a Abstract: IPW60R045CPA 6r045 mosfet 6r045A IPW60R099CPA IPB60R099CPA IPB60R199CPA PG-TO-247-3 PG-TO247 Contextual Info: IPW60R045CPA CoolMOS Power Transistor Product Summary V DS R DS on ,max Q g,typ 600 V 0.045 Ω 150 nC Features • Worldwide best R ds,on in TO247 • Ultra low gate charge PG-TO247-3 • Extreme dv/dt rated • High peak current capability • Automotive AEC Q101 qualified	Original	ipw60r045cpa pg-to247-3 6r045a pg-to262-3-1 +9pg-to220-3-1 pg-to247-3-41 6r045 mosfet 6r045a ipw60r099cpa ipb60r099cpa ipb60r199cpa pg-to-247-3 pg-to247	PDF
IPW50R045CP Abstract: JESD22 Contextual Info: IPW50R045CP CoolMOSTM Power Transistor Product Summary Features • Worldwide best R DS,on in TO247 • Lowest figure of merit RON x Qg V DS @Tjmax 550 V R DS on ,max 0.045 Ω 150 nC Q g,typ • Ultra low gate charge • Extreme dv/dt rated PG-TO247 • High peak current capability	Original	ipw50r045cp pg-to247 ipp50r045cp 5r045p +1jesd22	PDF
sd 431 transistor Abstract: 6R045A 6r045 ED-44 diode Contextual Info: IPW60R045CPA CoolMOS Power Transistor Product Summary V DS R DS on ,max Q g,typ ed nd me ns om sig ec de tr w e no rn fo Features 600 V 0.045 Ω 150 nC • Worldwide best R ds,on in TO247 • Ultra low gate charge PG-TO247-3 • Extreme dv/dt rated • High peak current capability	Original	ipw60r045cpa 6r045a pg-to247-3 ipw60pg-to263-3-2 +6pg-to262-3-1 pg-to220-3-1 pg-to247-3-41 sd 431 transistor 6r045 ed-44 diode	PDF
F1S30P06 Abstract: RF1S30P06 RF1S30P06SM RFG30P06 RFP30P06 TB334 Contextual Info: [ /Title RFG30 P06, RFP30P 06, RF1S30 P06, RF1S30 P06SM /Subject (30A, 60V, 0.065 Ohm, PChannel Power MOSFETs) /Author () /Keywords (Harris Semiconductor, PChannel Power MOSFETs, TO247, TO220AB, TO262AA, TO263AB) RFG30P06, RFP30P06, RF1S30P06, RF1S30P06SM	Original	rfg30 rfp30p rf1s30 p06sm +9o220ab o262aa o263ab rfg30p06 rfp30p06 f1s30p06 rf1s30p06 rf1s30p06sm tb334	PDF
Contextual Info: Super Fast Recovery Diode Data Sheet RFUH30TS6S lSerise lDimensions Unit : mm lStructure Standard Fast Recovery lApplication General rectification RFUH30 TS6S 1 lFeatures 2 1) Ultra low switching loss 2) High current overload capacity lConstruction ROHM : TO247	Original	rfuh30ts6s rfuh30 r1102a	PDF
diode 104 Abstract: click 0819 SML5023BN Contextual Info: SEME SML5023BN LAB 4TH GENERATION MOSFET TO247–AD Package Outline. Dimensions in mm inches (0.185) (0.209) (0.059) (0.098) N–CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 15.49 (0.610) 16.26 (0.640) 20.80 (0.819) 21.46 (0.845) 6.15 (0.242) BSC	Original	sml5023bn diode 104 click 0819	PDF
B4015L Abstract: MBR4015LWT Contextual Info: MBR4015LWT SWITCHMODE Schottky Power Rectifier TO247 Power Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low	Original	mbr4015lwt r14525 mbr4015lwt/d b4015l	PDF
B4015L Contextual Info: MBR4015LWT SWITCHMODE Schottky Power Rectifier TO247 Power Package Employing the Schottky Barrier principle in a large area metal−to−silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low	Original	mbr4015lwt mbr4015lwt/d b4015l	PDF
BFC45 Contextual Info: SEME BFC45 LAB 4TH GENERATION MOSFET TO247–AD Package Outline. Dimensions in mm inches (0.185) (0.209) (0.059) (0.098) N–CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 15.49 (0.610) 16.26 (0.640) 20.80 (0.819) 21.46 (0.845) 6.15 (0.242) BSC 4.69	Original	bfc45	PDF
sil 5102 Abstract: IRFP150 TB334 Contextual Info: IRFP150 Data Sheet May 2000 40A, 100V, 0.055 Ohm, N-Channel Power MOSFET [ /Title IRFP1 50 /Subject (40A, 100V, 0.055 Ohm, NChannel Power MOSFET) /Autho r () /Keywords (40A, 100V, 0.055 Ohm, NChannel Power MOSFET, Intersil Corporation, TO247) /Creator ()	Original	irfp150 sil 5102 tb334	PDF
BFC50 Abstract: BY 126 DIODE DYNAMIC RESISTANCE 1428-TR Contextual Info: SEME BFC50 LAB 4TH GENERATION MOSFET TO247–AD Package Outline. Dimensions in mm inches (0.185) (0.209) (0.059) (0.098) N–CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 15.49 (0.610) 16.26 (0.640) 20.80 (0.819) 21.46 (0.845) 6.15 (0.242) BSC 4.69	Original	bfc50 by 126 diode dynamic resistance 1428-tr	PDF
"VDSS 800V" mosfet Abstract: BFC46 Contextual Info: SEME BFC46 LAB 4TH GENERATION MOSFET TO247–AD Package Outline. Dimensions in mm inches (0.185) (0.209) (0.059) (0.098) N–CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 15.49 (0.610) 16.26 (0.640) 20.80 (0.819) 21.46 (0.845) 6.15 (0.242) BSC 4.69	Original	bfc46 vdss 800v" mosfet	PDF
MBR4015 Abstract: MBR4015LWT MBR4015LWTG Contextual Info: MBR4015LWT SWITCHMODEt Schottky Power Rectifier TO247 Power Package This device employs the Schottky Barrier principle in a large area metal−to−silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low	Original	mbr4015lwt mbr4015lwt/d mbr4015 mbr4015lwtg	PDF

SML5020BN Abstract: W112A Contextual Info: SEME SML5020BN LAB 4TH GENERATION MOSFET TO247–AD Package Outline. Dimensions in mm inches (0.185) (0.209) (0.059) (0.098) N–CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 15.49 (0.610) 16.26 (0.640) 20.80 (0.819) 21.46 (0.845) 6.15 (0.242) BSC	Original	sml5020bn 380ms w112a	PDF
BFC51 Abstract: W64A Contextual Info: SEME BFC51 LAB 4TH GENERATION MOSFET TO247–AD Package Outline. Dimensions in mm inches (0.185) (0.209) (0.059) (0.098) N–CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 15.49 (0.610) 16.26 (0.640) 20.80 (0.819) 21.46 (0.845) 6.15 (0.242) BSC 4.69	Original	bfc51 w64a	PDF
BFC44 Abstract: W52A Contextual Info: SEME BFC44 LAB 4TH GENERATION MOSFET TO247–AD Package Outline. Dimensions in mm inches (0.185) (0.209) (0.059) (0.098) N–CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 15.49 (0.610) 16.26 (0.640) 20.80 (0.819) 21.46 (0.845) 6.15 (0.242) BSC 4.69	Original	bfc44 w52a	PDF
MBR4015LWT Abstract: MBR4015LWTG Contextual Info: MBR4015LWT SWITCHMODEt Schottky Power Rectifier TO247 Power Package This device employs the Schottky Barrier principle in a large area metal−to−silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low	Original	mbr4015lwt mbr4015lwt/d mbr4015lwtg	PDF
BFC42 Contextual Info: SEME BFC42 LAB 4TH GENERATION MOSFET TO247–AD Package Outline. Dimensions in mm inches (0.185) (0.209) (0.059) (0.098) N–CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 15.49 (0.610) 16.26 (0.640) 20.80 (0.819) 21.46 (0.845) 6.15 (0.242) BSC 4.69	Original	bfc42	PDF
Contextual Info: MBR4015LWT SWITCHMODEt Schottky Power Rectifier TO247 Power Package This device employs the Schottky Barrier principle in a large area metal−to−silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low	Original	mbr4015lwt mbr4015lwt/d	PDF
Contextual Info: ICE47N60W Product Summary N-Channel Enhancement Mode MOSFET Features: TO247 Package Low rDS on Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching (UIS) Capability High Peak Current Capability Increased Transconductance Performance	Original	ice47n60w 250ua 187nc o-247 +60e-06 0e-05 0e-04 0e-03 0e-02 0e-01	PDF
BFC48 Contextual Info: SEME BFC48 LAB 4TH GENERATION MOSFET TO247–AD Package Outline. Dimensions in mm inches (0.185) (0.209) (0.059) (0.098) N–CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 15.49 (0.610) 16.26 (0.640) 20.80 (0.819) 21.46 (0.845) 6.15 (0.242) BSC 4.69	Original	bfc48	PDF
BFC52 Contextual Info: SEME BFC52 LAB 4TH GENERATION MOSFET TO247–AD Package Outline. Dimensions in mm inches (0.185) (0.209) (0.059) (0.098) N–CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 15.49 (0.610) 16.26 (0.640) 20.80 (0.819) 21.46 (0.845) 6.15 (0.242) BSC 4.69	Original	bfc52	PDF
Contextual Info: MBR4015LWT SWITCHMODE Schottky Power Rectifier TO247 Power Package . . . employing the Schottky Barrier principle in a large area metal−to−silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low	Original	mbr4015lwt	PDF

TO247 CASE Search Results

TO247 CASE Result Highlights (5)

TO247 CASE Datasheets Context Search

11n80c3

6r045a

IPW50R045CP

sd 431 transistor

F1S30P06

diode 104

B4015L

B4015L

BFC45

sil 5102

BFC50

"VDSS 800V" mosfet

MBR4015

SML5020BN

BFC51

BFC44

MBR4015LWT

BFC42

BFC48

BFC52